Login| Sign Up| Help| Contact|

Patent Searching and Data


Matches 1 - 50 out of 23,652

Document Document Title
WO/2021/003007A1
A superconducting flexible interconnecting cable connector for supercomputing systems is provided. The cable connector includes a base with a recessed area defined therein to receive superconducting flexible interconnecting cables and su...  
WO/2020/227338A3
Under certain conditions, a fermion in a superconductor can separate in space into two parts known as Majorana zero modes, which are immune to decoherence from local noise sources and are attractive building blocks for quantum computers....  
WO/2020/261667A1
Provided is a circuit in which a substantially even number of Josephson junctions are lined up in series. A circuit manufacturing method according to the present disclosure is a circuit manufacturing method using deposition, wherein a ci...  
WO/2020/260169A1
The invention relates to a subelement (1) for an Nb3Sn-containing superconductor wire (55), the subelement (1) being designed with - an Sn-containing core (2), - an inner matrix (5) which contains Cu and surrounds the Sn-containing core ...  
WO/2020/260000A1
The invention provides a multilayer superconductive article (600) extending in a longitudinal direction (LD), the article comprising: • - a substrate layer (610) extending in the longitudinal direction; • - a superconductive layer (6...  
WO/2020/257772A1
Entanglement among qubits can be generated using "rasterized" and interleaving techniques. A circuit can include a resource state generator that generates one resource state per clock cycle, with each resource state having a number of en...  
WO/2020/254226A1
A quantum computing device (300) is formed using a first chip (302) and a second chip (306), the first chip having a first substrate (303), a first set of pads (312 A,B), and a set of Josephson junctions (304) disposed on the first subst...  
WO/2020/254224A1
A quantum computing device (300) is formed using a first chip (302) and a second chip (306), the first chip having a first substrate (303), a first set of pads (312 A,B), and a set of Josephson junctions (304) disposed on the first subst...  
WO/2020/248517A1
Disclosed is a method for treating a SrTiO3 substrate, the method comprising the following steps: placing an untreated SrTiO3 substrate (100) in a vacuum chamber (20), wherein the pressure intensity of the vacuum chamber (20) is lower th...  
WO/2020/246112A1
The present invention provides a parametric amplifier that does not require use of a Josephson superconductivity junction, the parametric amplifier being such that manufacturing thereof is relatively simple, and being usable as-is even i...  
WO/2020/240412A1
The present disclosure relates to a one-electrode cell (10) and series of two or more cells as a device at temperatures from below to above room temperature comprising a very high permittivity ferroelectric. In a device constituted by on...  
WO/2020/180445A3
Superconducting integrated circuit (100) layouts are proofed against the detrimental effects of stray flux by designing and fabricating them to have one or more ground planes (104) patterned in thex y plane with a regular grid (106) of l...  
WO/2020/235555A1
A cryogenic device (100) is provided with: a hermetic container (102); a cryogenic refrigeration machine (10) provided with a first-step cooling stage (16a) that is disposed in the hermetic container (102); and a to-be-cooled member (104...  
WO/2020/205031A3
A magnetic Josephson junction (MJJ) device having (100) a ferrimagnetic/ferromagnetic (FIM/FM) exchange-biased bilayer (116, 118) used as the magnetic hard layer improves switching performance by effectively sharpening the hysteresis cur...  
WO/2020/221634A1
The present invention is in the field of apparatuses for tape lamination, in particular for laminating superconductor tapes. The apparatus for laminating tapes comprises a solder bath, a first alignment unit containing slits having diffe...  
WO/2020/221510A1
On a first superconducting layer (316) deposited on a first surface of a substrate (312), a first component of a resonator is pattered. On a second superconducting layer (326) deposited on a second surface of the substrate (312), a secon...  
WO/2020/215610A1
A magnetic tunnel junction device of a magnetic random access memory, comprising a reference layer (13), a tunneling dielectric layer (14), and a memory layer (15) stacked in sequence from bottom to top, wherein the memory layer (15) is ...  
WO/2020/219578A1
Embodiments disclosed herein include a resonator for use in quantum computing. The resonator can include a housing that is disposed along a resonator axis. The housing can have a first portion extending from a housing distal end to near ...  
WO/2020/216575A1
A tunable qubit device includes a tunable qubit, the tunable qubit including a superconducting quantum interference device (SQUID) loop. The tunable qubit device further includes a superconducting loop inductively coupled to the SQUID lo...  
WO/2020/213596A1
[Problem] The present invention addresses the problem of providing a quantum bit cell having an easy-to-integrate structure, and a quantum bit integrated circuit. [Solution] This quantum bit cell is characterized by comprising: a spin to...  
WO/2020/212194A1
The present invention is in the field of sealed high-temperature superconductor tapes. It relates to a superconducting tape comprising a substrate, a buffer layer, a superconductor layer, wherein the substrate, the buffer layer and the s...  
WO/2020/212105A1
A fluxonium qubit includes (400) a superinductor (402). The superinductor includes a substrate (404), and a first vertical stack (406) extending in a vertical direction from a surface (406) of the substrate (404). The first vertical stac...  
WO/2020/212437A1
A quantum computing device includes a first chip having a first substrate and one or more qubits disposed on the first substrate. Each of the one or more qubits has an associated resonance frequency. The quantum computing device further ...  
WO/2020/208499A1
The present invention relates to a superconductor comprising a ferroelectric with a very high dielectric constant at temperatures from below to above room temperature, in which a spontaneous dynamic alignment of the dipoles of the ferroe...  
WO/2020/207951A1
A qubit includes a substrate, and a first capacitor structure having a lower portion formed on a surface of the substrate and at least one first raised portion extending above the surface of the substrate. The qubit further includes a se...  
WO/2020/201414A1
In summary, the invention proposes using a finished conductor arrangement (20; 50) for producing an Nb3Sn superconductor wire (33) in accordance with the RRP principle, in which arrangement hexagonal RRP subelements (1a; 60a) are combine...  
WO/2020/172201A3
A 2nd generation high temperature superconductor wire that prevents mechanical destruction from the wire edge due to slitting. A 2G HTS wire according to embodiments of the present invention has a structure that prevents mechanical destr...  
WO/2020/198581A1
Systems and methods for performing bosonic quantum error correction (QEC) using Gottesman-Kitaev-Preskill (GKP) states are provided. An ancilla quantum mechanical oscillator is used to probe Gaussian noise experienced by a data quantum m...  
WO/2020/197894A1
A physical vapor deposition system includes a chamber, three target supports to targets, a movable shield positioned having an opening therethrough, a workpiece support to hold a workpiece in the chamber, a gas supply to deliver nitrogen...  
WO/2020/193415A1
A system (100) for controlling temperature of a persistent current switch (120) operating in a background magnetic field includes a heat exchanger (138), a loop tube (135), a ball valve (245) and multiple electromagnets (251, 252). The h...  
WO/2020/197892A1
A structure including a metal nitride layer is formed on a workpiece by preconditioning a chamber that includes a metal target by flowing nitrogen gas and an inert gas at a first flow rate ratio into the chamber and igniting a plasma in ...  
WO/2020/185336A1
A superconducting structure is provided that comprises a first superconducting device (12) coupled to a second superconducting device (22) employing a plurality of superconducting bump bond structures (30). Each of the plurality of super...  
WO/2020/162995A3
A superconducting on-chip coiled coupled-line 90° hybrid coupler is made of a series array of repeated cells of coiled transmission lines that are inductively and capacitively coupled. The coupler splits an incoming microwave signal int...  
WO/2020/185346A1
A buffer layer (104) can be used to smooth the surface roughness of a galvanic contact layer (102) (e.g., of niobium) in an electronic device, the buffer layer being made of a stack of at least four (e.g., six) layers of a face-centered ...  
WO/2020/180762A1
Technologies for tuning a resistance of tunnel junctions such as Josephson junctions are disclosed. In the illustrative embodiment, a Josephson junction is heated to 85 Celsius, and an electric field is applied to the Josephson junction....  
WO/2020/179554A1
The photon detection device according to one embodiment of the present invention comprises: a superconductive photon detection element array (10) in which a plurality of superconductive photon detection elements are disposed; a plurality...  
WO/2020/180885A1
A nonlinear parametric device includes a planar substrate and a millimeter-wave resonator formed from superconductive material deposited on the planar substrate. When the resonator is cooled below a critical temperature, it exhibits nonl...  
WO/2020/178657A1
A method includes forming a capacitor pad (304A, 304B) for a nonlinear resonator. The method includes comparing a resonance frequency of the nonlinear resonator to a target frequency to determine whether the resonance frequency falls wit...  
WO/2020/180902A1
Technologies for resource-efficient quantum error correction are disclosed. A quantum computer may include physical gate qubits, capable of general quantum gate operations such as single-qubit operations and nearest-neighbor two-qubit op...  
WO/2020/176462A1
A method of forming a kilometer(s)-length high temperature superconductor tape by feeding a textured tape from roll-to-roll through a reactor chamber, flowing high temperature superconductor precursors from an elongated precursor showerh...  
WO/2020/176251A1
Superconducting circuits and memories that use a magnetic Josephson junction (MJJ) device as a pi inverter are disclosed. The MJJ device includes superconducting layers configured to allow a flow of a supercurrent through the MJJ device....  
WO/2020/170392A1
Provided is a quantum computing device having a reduced number of electrodes. The quantum computing device is provided with: a plurality of superconducting lines which are arranged so as to form at least two unit lattices in plan view, a...  
WO/2019/173593A8
In various embodiments, superconducting wires incorporate diffusion barriers composed of Nb alloys or Nb-Ta alloys that resist internal diffusion and provide superior mechanical strength to the wires.  
WO/2020/169503A1
A superconducting progressive wave parametric amplifier comprising a chain (CES) of superconducting elements (JJ, SQ) having non-linear kinetic inductance connected in series, said superconducting elements being deposited onto a substrat...  
WO/2020/142119A3
A superconductor having improved critical current density when exposed to high-energy neutron radiation and high magnetic fields, such as found in a compact nuclear fusion reactor, and a method of making the same are described. According...  
WO/2020/172201A2
A 2nd generation high temperature superconductor wire that prevents mechanical destruction from the wire edge due to slitting. A 2G HTS wire according to embodiments of the present invention has a structure that prevents mechanical destr...  
WO/2020/117369A3
There is a superconducting article that includes a superconducting film comprising a substrate, one or more buffer layers, and a high temperature superconducting (HTS) layer. The superconducting layer may be comprised of the chemical com...  
WO/2020/167970A1
A superconductor device includes a low-dimensional material with a critical temperature higher than a critical temperature corresponding to a bulk form of the lowdimensional material. The low-dimensional material can include shape and st...  
WO/2020/146169A3
In-situ patterning of semiconductor structures is performed using one or more "shadow walls" (408) in conjunction with an angled deposition beam (110). A shadow wall protrudes outwardly from the surface of a substrate to define an adjace...  
WO/2020/167318A1
A method of fabricating a device (12), comprising: forming portions of electronic circuitry and a shadow wall structure (13) over a substrate, and subsequently depositing a conducting layer (5) over the substrate by angled deposition of ...  

Matches 1 - 50 out of 23,652