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WO/2023/047461A9 |
This quantum bit has: an s-wave superconductor layer; a higher-order topological insulator layer provided on the s-wave superconductor layer; a first ferromagnetic insulator layer provided on the higher-order topological insulator layer;...
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WO/2024/023967A1 |
A method for producing a structure according to the present invention comprises: a step for forming an s-wave superconductor layer on a base material; a step for forming a first transition metal dichalcogenide layer, which contains a van...
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WO/2023/243080A1 |
The present invention provides a method for producing a Josephson junction element, the method comprising: a step in which a mask layer, wherein a plurality of mask patterns each having a first opening that extends in a first direction a...
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WO/2023/223531A1 |
This quantum device comprises a higher-order topological insulator layer and a superconductor layer. The higher-order topological insulator layer has: a first surface and a second surface which are parallel to each other; a third surface...
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WO/2023/203679A1 |
This method for manufacturing a Josephson junction element comprises: a step for forming a mask layer on a substrate; a step for forming a first superconductive film on the substrate through first film formation from a first oblique dire...
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WO/2023/199419A1 |
This Josephson junction element has a first superconducting film, a first insulating film provided above the first superconducting film, and a second superconducting film provided above the first insulating film, wherein: a surface layer...
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WO/2023/188041A1 |
This superconducting quantum circuit is provided with a coupler (21) that couples a first through fourth quantum bits (20A to 20D) by a four-body interaction, the coupler comprising first and second electrodes (16, 18) and a Josephson ju...
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WO/2023/188391A1 |
This quantum device (1) includes a first substrate (10) and a plurality of second substrates (20A-20D) mounted on the first substrate, wherein: the first substrate has a first base material (11) including a first surface, a plurality of ...
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WO/2023/181247A1 |
This electronic device (1) has: a first film (41) which is a single-layer first layered metal chalcogenide, and has a first region (41A) and a second region (41B); a second film (42) which overlaps the second region and is a single- or m...
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WO/2023/139779A1 |
This Josephson element has: a first superconducting metal layer comprising a first surface; a second superconducting metal layer comprising a second surface facing the first surface; and an insulating layer provided between the first sur...
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WO/2023/132063A1 |
A quantum computing device (10) comprises: a first substrate (30) having a through-hole (32A, 32B); a qubit element (20) formed on a first surface (S1) of the substrate (30); a cover (50) covering the first surface (S1) side of the first...
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WO/2023/132064A1 |
A quantum computing device (10) comprises: a layered plurality of substrates (20, 30, 40) that includes a substrate (20) provided with a quantum bit element (11); and through vias (35A, 35B, 45A, 45B) that are provided to, of the plurali...
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WO/2023/109327A1 |
A silicon wafer and a method for filling a silicon hole therein, belonging to the technical field of superconducting quanta. The method comprises: providing a silicon wafer having a silicon hole (101); arranging a superconducting materia...
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WO/2023/095287A1 |
In the present invention, a structure (100) comprises a base (110), a first layer (120) provided on the base, and a second layer (130) provided on the first layer. The first layer is a Te layer, and the second layer has a transition meta...
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WO/2023/095199A1 |
A quantum device (1) has: a substrate (10); a two-dimensional topological insulator layer (23) provided on the substrate; a first protective layer (21) for covering the two-dimensional topological insulator layer; an opening (25) which i...
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WO/2023/058783A1 |
A phase insulator according to the present invention can create spin current using the energy of dipoles composed of particles and antiparticles, and the energy of the phase insulator is composed of the mobility of the particles and the ...
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WO/2023/056701A1 |
A quantum bit assembly, a quantum bit assembly preparation method, a chip, and a device, relating to the technical field of micro-nano processing. The quantum bit assembly comprises: a substrate (101), a superconducting circuit layer (10...
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WO/2023/047460A1 |
This Majorana quantum bit has a first topological insulator layer comprising a first edge; a first s-wave superconductor layer; and a first layer that is disposed between the first edge and the first s-wave superconductor layer and that ...
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WO/2023/045088A1 |
A qubit assembly preparation method, a qubit assembly, a quantum chip, and a device, relating to the technical field of micro-nano processing. The qubit assembly preparation method comprises: respectively preparing a waveguide film layer...
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WO/2023/041078A1 |
The present application discloses a transmission device and a preparation method therefor, and a quantum device integration component and a quantum computer, and belongs to the field of quantum information. The transmission device compri...
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WO/2023/030626A1 |
The disclosed device (400) based on a semiconductor-superconductor hybrid structure comprises a semiconductor component (410), a superconductor component (420) comprising a layer of aluminium, a tunnel barrier (425) of native aluminium o...
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WO/2023/030320A1 |
Disclosed are a quantum chip package apparatus and a manufacturing method therefor, and a quantum device. The quantum chip package apparatus comprises: a first substrate; a first coplanar waveguide transmission line, the first coplanar w...
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WO/2023/002513A1 |
Disclosed is an apparatus and a method. Spin-splitting is induced at a superconductor and spin-polarization facilitated for tunneling across a tunnel barrier so that electric current across the tunnel barrier between a conductor and the ...
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WO/2023/274511A1 |
Described is a semiconductor device (100) comprising a substrate (110) having a surface; a mesa arranged on the surface of the substrate, the mesa having a perimeter; and one or more gate electrodes (142). The mesa is obtainable by selec...
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WO/2022/261523A1 |
Quantum computing systems require methods to control energies of qubits and couplers for quantum operations. Flux biasing of qubits and quantum couplers is provided for a superconducting quantum computer using single-flux-quantum (SFQ) t...
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WO/2022/260677A1 |
A superconducting magnet (10) includes a cooling tank (15) containing a cooling medium and at least one superconducting circuit (16) configured for generating a magnetic field. The superconducting magnet further includes a power supply (...
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WO/2022/258493A1 |
The invention relates to a system for controlling a superconducting coil (6) with a magnetic persistent current switch (7). The magnetic persistent current switch (7) is used for switching the superconducting coil (6) between a persisten...
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WO/2022/249960A1 |
This thermally insulated container (10) comprises an inner container (11) and an outer container (14) that envelops the inner container (11) with a gap (15) therebetween. The inner container (11) and the outer container (14) are formed f...
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WO/2022/245508A1 |
High temperature superconductor (HTS)-based interconnect systems comprising a cable including HTS-based interconnects are described. Each of the HTS-based interconnects includes a first portion extending from a first end towards an inter...
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WO/2022/234183A1 |
According to an example aspect of the present invention, there is provided an isolating amplifier apparatus comprising a first 2x2 hybrid coupler and a second 2x2 hybrid coupler, each 2x2 hybrid coupler having a first input port, a secon...
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WO/2022/228678A1 |
A semiconductor device comprises a crystalline substrate and a nanowire arranged epitaxially on the crystalline substrate. The nanowire comprises: a gating layer arranged over the substrate, a quantum well arranged over the gating layer,...
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WO/2022/232598A1 |
Disclosed herein are cryogenic wires and methods of making and use thereof. For example, disclosed herein are cryogenic wires comprising a conductor having a mass density of 5000 kg/m3 or less; and a cladding material disposed around the...
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WO/2022/225628A1 |
A cryogenic multilayer interconnect structure has a substrate including a molybdenum layer, a first insulating layer on the substrate and a first superconducting layer on the first insulating layer. The molybdenum layer has a coefficient...
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WO/2022/219857A1 |
This joined body is provided with a first superconducting layer, a barrier layer arranged on the first superconducting layer, and a second superconducting layer arranged on the barrier layer. The first superconducting layer, the barrier ...
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WO/2022/220254A1 |
This magnetic flux bias circuit comprises: an input signal line to which an input signal representing a magnetic flux for application as a digital value is input; a first current control line, a second current control line, and a third c...
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WO/2021/156318A9 |
Devices, methods, and/or computer-implemented methods that can facilitate formation of a self assembled monolayer on a quantum device are provided. According to an embodiment, a device can comprise a qubit formed on a substrate. The devi...
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WO/2022/207865A1 |
The present disclosure relates to a method of manufacturing a transferable lamella comprising interconnected nanostructures, the method comprising the steps of: a)providing a substrate such as a planar substrate; b) forming at least one ...
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WO/2022/201253A1 |
The present invention provides a superconducting device including a substrate, a through hole formed in the substrate, and a through electrode provided in the through hole. The through electrode includes a first part and a second part di...
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WO/2022/196952A1 |
The present invention relates to a cooling control apparatus for a superconducting fault current limiter, which may comprise: a superconducting fault current limiter for cooling a saturated liquid coolant with a refrigerator to maintain ...
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WO/2022/196949A1 |
The present invention relates to a cooling apparatus for a superconducting fault current limiter, which may comprise: a first container containing a supercooled liquid coolant in which a superconducting element is immersed; a second cont...
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WO/2022/197482A1 |
A van der Waals capacitor and a qubit constructed with such a capacitor. In some embodiments, the capacitor includes a first conductive layer; an insulating layer, on the first conductive layer; and a second conductive layer on the insul...
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WO/2022/192864A1 |
A neuromorphic computing circuit includes a plurality of memristors that function as synapses. The neuromorphic computing circuit also includes a superconducting quantum interference device (SQUID) coupled to the plurality of memristors....
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WO/2022/188604A1 |
The present application discloses a quantum chip and a preparation method. The quantum chip comprises a basic substrate on which a signal transmission line is formed; and at least one insulation substrate located on the basic substrate. ...
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WO/2022/192140A1 |
Trap circuits for use with superconducting integrated circuits having differential capacitively-coupled resonant clock networks are described. An example superconducting integrated circuit (IC) includes a first superconducting circuit co...
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WO/2022/190684A1 |
A quantum entanglement generation device 10 comprises, when n is an integer of 2 or more, two superconducting quantum bit elements 20a and 20b each having three electrodes, a coupled resonator 30 disposed between the adjacent superconduc...
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WO/2022/189511A1 |
Circuits and methods of operation that can facilitate reducing surface losses for quantum devices are provided. In one example, a quantum device can comprise a dielectric layer, a first electrode, and a second electrode. The dielectric l...
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WO/2022/187929A1 |
An array of single photon avalanche diodes (SPAD) is divided into subarrays, and each subarray is activated in sequence while remaining subarrays are recharged. As a whole, the SPAD array performs as a continuously operating photodetecto...
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WO/2022/184592A1 |
Techniques regarding quantum transducers are provided. For example, one or more embodiments described herein can include an apparatus that can include a superconducting microwave resonator having a microstrip architecture that includes a...
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WO/2022/179418A1 |
The present application relates to the technical field of quantum computing and discloses a superconducting circuit preparation method and a superconducting quantum chip. The preparation method comprises: determining a first junction are...
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WO/2022/182967A1 |
A vapor deposition reactor apparatus, systems and methods for deposition of thin films, particularly high-temperature superconducting (HTS) coated conductors, utilize multi-sided susceptors and susceptor pairs for increased production th...
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