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WO/2019/139025A1 |
This spin orbital torque-type magnetization rotation element (10) is provided with: a spin orbital torque wiring (2) that extends in a first direction (x); a first ferromagnetic layer (1) that is laminated in a second direction (z) inter...
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WO/2019/136415A1 |
A Magnetic Tunnel Junction (MTJ) device can include an array of cells. The array of cells can include a plurality of source lines disposed in columns, set of selectors coupled to respective source lines, MJT structures coupled to respect...
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WO/2019/135744A1 |
A memory device comprises an interconnect having a spin orbit torque (SOT) material. A magnetic tunnel junction (MTJ) device comprises a free layer magnet coupled to the interconnect, a reference fixed magnet, and a barrier material betw...
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WO/2019/136409A1 |
Methods of fabricating devices including arrays of integrated Magnetic Tunnel Junctions (MTJs) and corresponding selectors in an array of cells. The array of cells can include a plurality of source lines disposed in columns, set of selec...
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WO/2019/135743A1 |
A memory device comprises an interconnect having a spin orbit torque (SOT) material. A magnetic tunnel junction (MTJ) device comprises a free layer magnet coupled to the interconnect, a reference fixed magnet, and a barrier material betw...
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WO/2019/133295A1 |
A memory device comprising an array of memory cells wherein each memory cell comprises a respective magnetic random access memory (MRAM) element, a respective gating transistor, and a common wordline coupled to gates of gating transistor...
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WO/2019/131394A1 |
According to the present invention, a tunnel magnetoresistive effect (TMR) element 11 that is able to properly operate in a high temperature environment, a high magnetic field environment and the like is provided with an exchange coupled...
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WO/2019/133479A1 |
A method for manufacturing a magnetic random access memory chip having magnetic memory elements with different performance characteristics formed on the same chip. The magnetic memory elements can be magnetic random access memory element...
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WO/2019/131812A1 |
The present invention addresses the problem of providing a magnetic sensor module in which the size of a magnetic sensor chip is suppressed, while a uniform calibration magnetic field is applied to a magneto-resistive element. Provided i...
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WO/2019/131392A1 |
A magnetic field application bias film 11 having high magnetic field resistance is provided with an exchange coupling film 10 having a permanent magnet layer 3 and an antiferromagnetic layer 4 layered upon the permanent magnet layer 3. T...
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WO/2019/133484A1 |
A method of forming a transistor, according to one embodiment, includes: forming an doped material, depositing an oxide layer on the doped material, depositing a conducting layer on the oxide layer, patterning the conducting layer to for...
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WO/2019/131391A1 |
A magnetic field application bias film 11 having high magnetic field resistance is provided with an exchange coupling film 10 having a ferromagnetic layer 3 and an antiferromagnetic layer 4 layered upon the ferromagnetic layer 3. The ant...
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WO/2019/131816A1 |
The present invention addresses the problem of providing a magnetic sensor module in which the impact on a magnetic sensor of heat generated from a coil is reduced. According to a conventional method, a plurality of temperature measuring...
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WO/2019/131393A1 |
Provided are: a position sensing element which is provided with an exchange coupled film that has a large exchange coupling magnetic field; and a position sensor which has good sensing accuracy in a high temperature environment. A positi...
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WO/2019/132862A1 |
An apparatus is provided which comprises: a first magnet with conductive properties; a first structure adjacent to the first magnet; a second magnet with semi-insulative or insulative properties, wherein the second magnet is adjacent to ...
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WO/2019/133868A1 |
An STT-MRAM device incorporating a multiplicity of MTJ junctions is encapsulated so that it dissipates heat produced by repeated read/write processes and is simultaneously shielded from external magnetic fields of neighboring devices. In...
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WO/2019/132994A1 |
In an embodiment, described herein are systems, methods, and apparatuses directed towards segmentation of a large cross-point memory a memory array (or tile) into two or more memory arrays (sub-tiles) of smaller size for use as an embedd...
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WO/2019/132995A1 |
Disclosed herein are systems, methods, and apparatuses that are directed to a selector for use in connection with memory devices. In an embodiment, the selector can comprise a device that has current-voltage characteristics that are symm...
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WO/2019/133117A1 |
A semiconductor device assembly is provided. The assembly comprises a package substrate, a first stack of semiconductor dies having a first set of planform dimensions disposed over a first location on the substrate, a second stack of sem...
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WO/2019/131142A1 |
Provided are a product-sum calculation device, a neuromorphic device, and a method for using a product-sum calculation device, which, when applied to a neural network, is able to reduce a risk that the performance of the neural network w...
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WO/2019/125368A1 |
An apparatus is provided which comprises: a magnetic junction; and an interconnect adjacent to the magnetic junction, wherein the interconnect comprises a super lattice of a neutral and charged perovskite.
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WO/2019/125363A1 |
An apparatus is provided which comprises: a magnetic junction including: a stack of structures including: a first structure comprising a magnet with a first magnetic anisotropy; a second structure comprising a magnet with a second magnet...
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WO/2019/124257A1 |
The purpose of the present invention is to make it possible to ensure a strength that allows thermoelectric evaluation to be performed even when sintering is carried out at a temperature lower than the minimum sintering temperature of a ...
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WO/2019/125366A1 |
An apparatus is provided which comprises: a magnetic junction (e.g., magnetic tunneling junction or spin valve); a structure adjacent to the magnetic junction, the structure comprising a magnet doped with a material (e.g., Ge, Ga, Si, F,...
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WO/2019/125365A1 |
An apparatus is provided which comprises: a magnetic junction having a magnet with a first magnetization; an interconnect adjacent to the magnetic junction, wherein the interconnect comprises a material exhibiting spin orbit coupling; an...
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WO/2019/125369A1 |
An apparatus is provided which comprises: a magnet having a first portion and a second portion; a first structure, a portion of which is adjacent to the first portion of the magnet, wherein the first structure is to provide an inverse sp...
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WO/2019/125267A1 |
The present invention relates to a method for assembling molecules (108) on the surface of a two-dimensional material (104) formed on a substrate (102), the method comprises: forming a spacer layer (106) comprising at least one of an ele...
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WO/2019/125388A1 |
An apparatus is provided which comprises: a first magnetic junction; a second magnetic junction; an interconnect adjacent to the first and second magnetic junctions; a first structure adjacent to the interconnect such that the first stru...
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WO/2019/125381A1 |
An apparatus is provided which comprises: a magnetic junction; and an interconnect adjacent to the magnetic junction, wherein the interconnect comprises a material exhibiting Neel spin orbit coupling. Another apparatus is provided which ...
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WO/2019/125383A1 |
An apparatus is provided which comprises: a magnetic junction including: a structure comprising a super lattice including a first material and a second material, wherein the structure has perpendicular magnetic anisotropy (PMA), wherein ...
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WO/2019/125364A1 |
An apparatus comprises: a magnetic junction including: a first structure comprising a magnet with a first PMA, the first structure has an anisotropy axis perpendicular to a plane of a device; a second structure comprising one of a dielec...
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WO/2019/125384A1 |
An apparatus comprising: a magnetic junction having a structure comprising an unpinned magnet; a structure comprising an insulative or semi-insulative magnet, the structure being adjacent to the magnet junction; and an interconnect adjac...
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WO/2019/125387A1 |
An apparatus is provided which comprises: a magnetic junction including: a first structure comprising a magnet with unfixed perpendicular magnetic anisotropy (PMA) with respect to a plane of a device; a second structure comprising one of...
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WO/2019/118288A1 |
A magnetic tunnel junction (MTJ) is disclosed wherein a free layer (14, FL) interfaces with a first metal oxide (17a, Mox) layer and second metal oxide (13, tunnel barrier) to produce perpendicular magnetic anisotropy (PMA) in the FL. In...
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WO/2019/117965A1 |
An integrated circuit structure includes a first conductive line along a first direction. A memory cell is on the first conductive line, wherein the memory cell comprises: a selector element, a memory element, and a resistive element in ...
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WO/2019/111631A1 |
This method for manufacturing a magnetic sensor 1 includes: a hard magnetic layer forming step of forming, on a disk-shaped non-magnetic base plate 10, a hard magnetic layer 103 to be processed into a thin film magnet 20; a soft magnetic...
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WO/2019/111744A1 |
This production method of an MI element 1 involves: an insulating step for forming an insulation layer 3 on the outer periphery of an amorphous wafer 2; an electroless plating step for forming an electroless plating layer 4 on the outer ...
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WO/2019/111780A1 |
A magnetic sensor according to the present invention is provided with: a magnetosensitive element; an insulating layer which covers the magnetosensitive element; a conductor part (60) which is positioned on the insulating layer and compr...
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WO/2019/111765A1 |
A first conductive unit (60) includes a first base (61) and a first narrow part (62) having an outer shape area smaller than the outer shape area of the first base (61) when viewed from a direction perpendicular to an insulating layer. T...
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WO/2019/111782A1 |
This magnetic sensor comprises: a magnetosensitive element; an insulating layer covering the magnetosensitive element; a first conductor part (60) located on the insulating layer; and a first magnetic member (40) located on the first con...
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WO/2019/112846A1 |
A method of fabricating a magnetoresistive device includes etching a magnetoresistive stack using a first etching process to form one or more sidewalls and etching the stack using a second etching process after forming the one or more si...
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WO/2019/111781A1 |
This magnetic sensor comprises: a magnetosensitive element; an insulating layer covering the magnetosensitive element; a first conductor part (60) located on the insulating layer; and a first magnetic member (40) located on the first con...
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WO/2019/111766A1 |
A first magnetic body member (40) is positioned in a region inside of the outer peripheral edge of a first magnetoresistance element. A second magnetoresistance element is either positioned in a region inside of the inner peripheral edge...
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WO/2019/108381A1 |
A magnetically free region of magnetoresistive device includes at least a first ferromagnetic region and a second ferromagnetic region separated by a non-magnetic insertion region. At least one of the first ferromagnetic region and the s...
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WO/2019/107029A1 |
A magnetic sensor 1 comprises: a thin film magnet 20 which is constituted by a hard magnetic layer 103 and has magnetic anisotropy in an in-plane direction; and a sensing part 30 which is constituted by a soft magnetic layer 105 disposed...
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WO/2018/125204A9 |
A material layer stack for a pSTTM memory device includes a magnetic tunnel junction (MTJ) stack, a oxide layer, a protective layer and a capping layer. The MTJ includes a fixed magnetic layer, a tunnel barrier disposed above the fixed m...
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WO/2019/099438A1 |
A method of fabricating a magnetoresistive device includes forming a magnetically fixed region on one side of an intermediate region. Forming the magnetically fixed region may include forming a first ferromagnetic region and forming an a...
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WO/2019/092817A1 |
Provided is a TMR element, comprising a magnetic tunnel junction portion, a side wall portion provided on the side surface of the magnetic tunnel junction portion, a cap layer covering the top surface of the magnetic tunnel junction port...
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WO/2019/094545A1 |
The disclosed integrated circuit device (100) includes a memory portion (120) and a logic portion (110). The memory portion includes magnetoresistive devices (210), preferably magnetic tunnel junctions (250), and metal conductors (230, 2...
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WO/2019/092816A1 |
This TMR element comprises a magnetic tunnel joining section, a side wall section that covers a side surface of the magnetic tunnel joining section, and a fine particle region that is provided in the side wall section, wherein the side w...
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