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WO/2019/005164A1 |
A memory device includes a bottom electrode, a fixed magnet above the bottom electrode, a tunnel barrier on the fixed magnet, a free magnet on the tunnel barrier. One of the free magnet or the fixed magnet includes a magnetic alloy consi...
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WO/2019/002761A1 |
A method for controlling a spin qubit quantum device (100) comprising: - a semiconducting portion (102); - a dielectric layer (104) covered by the semiconducting portion; - a front gate (108) partially covering an upper edge (113) of the...
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WO/2019/002453A1 |
The invention concerns a two-dimensional electron gas field-effect transistor (10) comprising: - a drain (14), - a source (16), - a heterojunction (22) comprising: - a first planar layer (26), the first layer (26) being produced from a f...
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WO/2019/005147A1 |
An apparatus is provided which comprises: a magnetic junction having a free magnet layer which has perpendicular magnetic anisotropy (PMA), wherein the free magnet layer has anisotropy axis perpendicular to a plane of a device; and an in...
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WO/2019/005163A1 |
A memory structure includes a conductive interconnect disposed above a substrate, a memory device disposed above the conductive interconnect and coupled with the conductive interconnect. The memory device has sidewalls and an uppermost s...
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WO/2019/005128A1 |
MTJ material stacks including one or more nano-contact, MTJ devices employing such stacks, and computing platforms employing such MTJ devices. Nano-contacts having lateral dimensions smaller than the lateral dimensions of a free magnet l...
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WO/2019/005146A1 |
An apparatus is provided which comprises: a first semi-insulating magnet; a first magnet with non-insulating properties adjacent to the first semi-insulating magnet; a stack of layers, a portion of which is adjacent to the first magnet, ...
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WO/2019/005176A1 |
An apparatus is provided which comprises: a magnet; a stack of layers, a portion of which is adjacent to the magnet, wherein the stack of layers is to provide an inverse spin-orbit coupling effect; a layer exhibiting magnetoelectric prop...
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WO/2019/005160A1 |
A memory device includes a bottom electrode comprising a non-stoichiometric tantalum nitride layer. A synthetic antiferromagnetic layer is disposed above the bottom electrode. A fixed magnet is disposed above the synthetic antiferromagne...
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WO/2019/005158A1 |
A spin orbit torque (SOT) memory device includes a spin orbit torque electrode disposed in a dielectric layer above a substrate and a magnetic tunnel junction (MTJ) device disposed on a portion of the spin orbit torque electrode. The spi...
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WO/2019/005127A1 |
MTJ material stacks including one or more nano-contact, MTJ devices employing such stacks, and computing platforms employing such MTJ devices. Nano-contacts having lateral dimensions smaller than the lateral dimensions of a free magnet l...
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WO/2019/005076A1 |
MTJ material stacks including a carbon-doped ferromagnetic material, MTJ devices employing such stacks, and computing platforms employing such MTJ devices. A free magnet with one or more ferromagnetic material layer that includes carbon ...
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WO/2019/005034A1 |
Apparatuses including perpendicular magnetic tunnel junctions having free and fixed magnet layers with perpendicular magnetic anisotropy separated by a barrier layer and an in- plane magnet layer with in-plane magnetic anisotropy adjacen...
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WO/2019/005082A1 |
MTJ material stacks including one or more material layers that have outdiffused one or more dopants through a layer sidewall edge, MTJ devices employing such stacks, and computing platforms employing such MTJ devices. A free magnet layer...
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WO/2019/005177A1 |
An apparatus is provided which comprises: a magnet with non-insulating properties; a semi-insulating or insulating magnet adjacent to the magnet; and a stack of layers, a portion of which is adjacent to the magnet with non-insulating pro...
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WO/2019/005175A1 |
An apparatus is provided which comprises: a first magnet; a stack of layers, a portion of which is adjacent to the first magnet, wherein the stack of layers is to provide an inverse spin-orbit coupling effect; a capacitive device coupled...
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WO/2019/005026A1 |
An apparatus is provided which comprises: a planar dielectric surface, two or more conductive leads on the surface, the conductive leads extending away from the substrate surface, two or more conductive traces on the surface between the ...
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WO/2019/005083A1 |
MTJ material stacks including a carbon-doped filter layer, MTJ devices employing such material stacks, and computing platforms employing such MTJ devices. A composite fixed magnet structure may include one or more ferromagnetic material ...
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WO/2019/005129A1 |
A spin Hall effect magnetoresistive random-access memory cell includes first and second access transistors in a device level of a semiconductor device, a wordline in the device level and coupled to gate terminals of the first and second ...
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WO/2019/005157A1 |
A memory device includes a bottom electrode disposed above a substrate, a fixed magnet disposed above the bottom electrode, a tunnel barrier including a magnesium oxide disposed on the fixed magnet, a free magnet on the tunnel barrier, a...
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WO/2019/005168A1 |
A memory device includes a wordline disposed above a substrate and a selector element disposed above the wordline, where the selector element includes a phase change material. The memory device further includes a bipolar memory element d...
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WO/2019/005162A1 |
A material layer stack for a memory device includes a first electrode, a magnetic tunnel junction disposed above the first electrode, a metallic barrier layer disposed on the magnetic tunnel junction, an insulator-metal transition (IMT) ...
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WO/2019/005156A1 |
A spin orbit torque (SOT) memory device includes a spin orbit torque electrode disposed in a dielectric layer above a substrate and a magnetic tunnel junction (MTJ) device disposed on a portion of the spin orbit torque electrode. The spi...
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WO/2019/005075A1 |
Apparatuses including a non-conformal sidewall material layer adjacent to a sloped sidewall magnetic tunnel junction stack having a fixed magnet layer and a free magnet layer separated by a barrier layer and a terminal electrode, systems...
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WO/2018/236360A1 |
Phase field effect transistors (Phase FETs) having ferroelectric gate dielectrics are described. In an example, an integrated circuit structure includes a channel layer above a substrate. The channel layer is composed of a material havin...
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WO/2018/236369A1 |
Embodiments are generally directed to enhanced materials processing for magneto-electric spin orbit (MESO) devices. An embodiment of an apparatus includes a first transistor and a second transistor, each transistor including a gate elect...
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WO/2018/236366A1 |
Embodiments are generally directed to colossal magnetoresistance for magnetic read out utilizing Heusler alloys. An embodiment of a spin logic device includes a magnetic tunnel junction, which includes a stack including a plurality of la...
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WO/2018/236356A1 |
Ferroelectric field effect transistors (FeFETs) having compound semiconductor channels are described. In an example, an integrated circuit structure includes a semiconductor channel layer above a substrate. The semiconductor channel laye...
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WO/2018/236403A1 |
Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second g...
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WO/2018/236121A1 |
The present invention provides a magnetic tunnel junction device and a manufacturing method therefor. The magnetic tunnel junction device comprises a heavy metal layer, a free magnetic layer disposed on the heavy metal layer, and a tunne...
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WO/2018/230466A1 |
Provided is a ferromagnetic tunnel junction which, as a tunnel barrier layer disposed between a first magnetic layer and a second magnetic layer, is an oriented crystal body having a laminated structure of a first insulating layer and a ...
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WO/2018/227901A1 |
A vertically magnetized MTJ device and an STT-MRAM. The vertically magnetized MTJ device comprises a reference layer (2), an insulation barrier layer (3), a free layer (4), an enhancing layer (5), a demagnetization coupling layer (6) and...
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WO/2018/231522A1 |
A plasma enhanced chemical vapor deposition (PECVD) method is disclosed for forming a SiON encapsulation layer on a magnetic tunnel junction (MTJ) sidewall that minimizes attack on the MTJ sidewall during the PECVD or subsequent processe...
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WO/2018/230262A1 |
In order to improve the linearity of rising pulse detection to 0.5% or less to enhance magnetic sensitivity and linearity, which are advantages of rising pulse detection, this magnetic sensor has a configuration in which two magnetic wir...
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WO/2018/231695A1 |
A process and device is disclosed for etching a magnetroresistive random access memory device which includes at least one magnetic tunnel junction stack structure which includes an insulating layer disposed between first and second magne...
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WO/2018/230116A1 |
A magnetic sensor 1 is provided with: a thin film magnet 20 that is formed of a hard magnetic material and that possesses magnetic anisotropy in an in-plane direction; a sensitive part 30 that is formed of a soft magnetic material, that ...
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WO/2018/224928A1 |
A magnetic tunnel junction (MTJ) storage element includes a reference layer, a tunnel barrier and a free layer on an opposite side of the tunnel barrier layer from the reference layer. The reference layer has a fixed magnetization direct...
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WO/2018/224929A1 |
A magnetic tunnel junction (MTJ) storage element includes a reference layer, a tunnel barrier and a free layer on an opposite side of the tunnel barrier layer from the reference layer. The reference layer has a fixed magnetization direct...
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WO/2018/221260A1 |
Provided is a magnetic sensor having enhanced accuracy or reliability. The magnetic sensor is equipped with a first magnetism detection element that outputs a first detection signal, a second magnetism resistance detection element that o...
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WO/2018/213107A1 |
Processes for forming magnetic tunnel junction (MTJ) nanopillars (la) with minimal sidewall residue and damage are disclosed wherein a pattern is first formed in a hard mask (15) that is an uppermost MTJ layer. Thereafter, the hard mask ...
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WO/2018/213223A1 |
A seed layer stack (23t) with a uniform top surface having a peak to peak roughness of 0.5 nm is formed by sputter depositing an amorphous layer (22) on a smoothing layer (21) such as Mg where the latter has a resputtering rate 2 to 30X ...
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WO/2018/206591A1 |
The present invention relates to a method for tuning the magnetic coercivity of a nanoporous film, a device and uses thereof The method comprises: - providing a thick nanoporous film having a thickness above 10 nm and an average nanopore...
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WO/2018/208507A1 |
A semiconductor structure includes an electrode, a ferroelectric material adjacent the electrode, the ferroelectric material comprising an oxide of at least one of hafnium and zirconium, the ferroelectric material doped with bismuth, and...
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WO/2018/204832A1 |
Methods and means for the automated manufacturing of linear permanent magnet (PM) arrays in rows. A convergence device may be used that restricts movement of PM elements from PM cartridges as the PM elements are formed into PM array rows...
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WO/2018/204755A1 |
A system and a method for the deterministic generation of magnetic skyrmions includes a magnetic strip configured to store and transport skyrmions. The magnetic strip includes one or more spatial inhomogeneities configured to generate a ...
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WO/2018/204785A1 |
A multilayer structure comprising FM/NM/FM layers enhances the amplitude of the unidirectional spin Hall magnetoresi stance (USMR) thanks to an additional FM/NM layer interface. The USMR can be used to detect the in-plane magnetization d...
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WO/2018/203554A1 |
This magnetic element is formed of a magnetic material, wherein the magnetic material can generate skyrmions, and a defect is introduced at a position corresponding to each side of an approximate triangle in a plan view. In the magnetic ...
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WO/2018/198627A1 |
[Problem] To provide a magnetic field sensor capable of detecting magnetism over a wide range, with a more compact sensor chip being used. [Solution] The present invention comprises a plurality of unit magnetism sensors 10 arranged in an...
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WO/2018/199067A1 |
In order to detect the two-component magnetic field strength in the same position of a measurement sample and to detect with high spatial resolution the magnetic field distribution of the measurement sample, this measurement sensor 100 i...
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WO/2018/198121A1 |
A device for quantum computers having two or more parallel electronic layers, each containing a 2-dimensional electron gas (2DEG) in the quantum Hall effect. The layers contain different filling factors supporting different configuration...
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