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Matches 651 - 700 out of 15,134

Document Document Title
WO/2018/199068A1
The purpose of the present invention is to perform measurement with high accuracy and high spatial resolution by suppressing shifts in detection positions and detection timings by means of magnetoresistive elements. In a magnetic sensor ...  
WO/2018/198713A1
According to an embodiment of the invention, this magnetic element comprises a first magnetic layer and a first non-magnetic layer. In a state wherein substantially no voltage or magnetic field is applied to the first magnetic layer, the...  
WO/2018/198696A1
According to an embodiment, a magnetic storage device includes a laminate and a controller. The laminate includes: a first conductive layer; a second conductive layer; a first magnetic layer provided between the first conductive layer an...  
WO/2018/195424A1
The present disclosure is drawn to a method of fabricating an integrated circuit device (100) having a magnetoresistive device (210). In some aspects, the method includes forming the magnetoresistive device on a first contact (250) of a ...  
WO/2018/194155A1
A magnetization control element (100) according to an embodiment of the present invention is provided with: a magnetization control layer (10) which includes a magnetoelectric material exhibiting a magnetoelectric effect; and a magnetic ...  
WO/2018/189964A1
The magnetic domain wall utilizing analog memory element according to one mode of the present invention comprises: a magnetized fixed layer (1) wherein the magnetization is oriented in a first direction; a non-magnetic layer (2) provided...  
WO/2018/190964A1
An in-plane SOT MRAM non-volatile memory cell has enhanced thermal stability due to coercive pinning provided by an adjacent antiferromagnetic layer that has a thickness that is less than a minimum critical thickness needed to provide ex...  
WO/2018/186986A1
A method for etching a magnetic tunneling junction (MTJ) structure is described. A stack of MTJ layers (14) is provided on a bottom electrode (12). A top electrode (16) is provided on the MTJ stack. The top electrode is patterned. Therea...  
WO/2018/186971A1
A magnetic tunnel junction with perpendicular magnetic anisotropy (PMA MTJ) is disclosed wherein a free layer (14) has an interface (20) with a tunnel barrier (13) and a second interface (21) with an oxide layer (15). A lattice-matching ...  
WO/2018/186983A1
A method for etching a magnetic tunneling junction (MTJ) structure is described. A bottom electrode layer (12) is provided on a substrate (10). A seed layer (16) is deposited on the bottom electrode layer. The seed layer and bottom elect...  
WO/2018/186826A1
Embodiments are generally directed to optical transduction for Magneto-Electric Spin Orbit (MESO) logic. An embodiment of an apparatus includes an optical waveguide to receive an optical input; and an optical to electrical transducer, th...  
WO/2018/186863A1
An embedded spin-transfer torque magnetic random-access memory (STT-MRAM) memory cell includes: a wordline to supply a gate signal; a selector thin-film transistor (TFT) including an active layer and configured to electrically connect a ...  
WO/2018/186982A1
A magnetic device for magnetic random access memory (MRAM) technology comprises perpendicularly magnetized magnetic tunnel junctions (p-MTJs, 11a, 11b), each having a sidewall (11s1, 11s2) formed between a bottom electrode (10a) and a to...  
WO/2018/185991A1
[Problem] To provide a magnetic storage element in which a writing current is reduced while maintaining the magnetism-retaining characteristics of a storage layer; and an electronic device. [Solution] A magnetic storage element, provided...  
WO/2018/182740A1
Techniques are disclosed for forming magnetic random access memory (MRAM) devices and logic devices that includes a layer of material to induce a spin Hall effect (SHE) that is in contact with a layer of a spin absorption material. Dispo...  
WO/2018/182644A1
An embodiment includes an apparatus comprising: a magnetic tunnel junction (MTJ) including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier layer between the free and fixed magnetic layers; and a layer including a memb...  
WO/2018/182650A1
A material layer stack for a pSTTM memory device includes a fixed magnetic layer, a tunnel barrier disposed above the fixed magnetic layer and a free magnetic layer disposed on the tunnel barrier. In an embodiment, the free magnetic laye...  
WO/2018/179961A1
According to this embodiment, a magnetic element includes a first layer and a second layer. The first layer contains a first element containing at least one selected from the group consisting of Fe, Co, and Ni and a second element contai...  
WO/2018/179660A1
Provided are a magnetoresistance effect element and a magnetic memory. The direction of magnetization of a storage layer is vertical with respect to a film surface in the magnetoresistance effect element, which has a high thermal stabili...  
WO/2018/180701A1
This spin-current magnetization reversal element is provided with: a first ferromagnetic metal layer of which a magnetization direction varies; and a spin orbit torque wiring which extends in a second direction intersecting a first direc...  
WO/2018/182697A1
A magnetic tunnel junction (MTJ) device, includes an MTJ material layer stack having an uppermost surface, a lowermost surface, and a sidewall ending from the uppermost surface to the lowermost surface. The MTJ material stack includes a ...  
WO/2018/182667A1
An embodiment includes an apparatus comprising: a magnetic tunnel junction (MTJ) including a fixed magnetic layer and a tunnel barrier layer; a first layer on the tunnel barrier layer; a second layer on the first layer; and an oxide laye...  
WO/2018/182698A1
A material layer stack for a pSTTM device includes a magnetic tunnel junction (MTJ) having a fixed magnetic layer, a tunnel barrier disposed above the fixed magnetic layer and a free magnetic layer disposed on the tunnel barrier. An oxid...  
WO/2018/182651A1
A magnetic tunnel junction (PSTTM) device includes a bottom electrode, a fixed magnet above the bottom electrode, a tunnel barrier disposed above the fixed magnet, a free magnet disposed on the tunnel barrier, an oxide layer disposed abo...  
WO/2018/182645A1
An embodiment includes an apparatus comprising: a magnetic tunnel junction (MTJ) including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier layer between the free and fixed layers; and first, second, and third layers; ...  
WO/2018/179193A1
Provided are: a memory element that is capable of efficiently storing, as a selection value, a continuous quantity or multi-valued discrete quantity; and a method for driving a memory element. A memory element (10) has a structure in whi...  
WO/2018/182663A1
An embodiment includes an apparatus comprising: a magnetic tunnel junction (MTJ) including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier layer between the free and fixed magnetic layers; and an oxide layer, directly...  
WO/2018/180655A1
The purpose of the present invention is to provide a method which makes it possible, in a dry process using no plasma, to remove an element constituting material including a stable metal element, such as Ru or Ta, from a surface of an ob...  
WO/2018/182642A1
An embodiment includes an apparatus comprising: a magnetic tunnel junction (MTJ) including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier layer between the free and fixed layers; the tunnel barrier layer directly con...  
WO/2018/175070A1
A magnetic device for magnetic random access memory (MRAM) technology comprises a magnetic tunnel junction (MTJ, 11a) with a sidewall (11s1) formed between a bottom electrode (10a) and a top electrode (14a). A passivation layer (12) that...  
WO/2018/174877A1
A spintronic device includes a first ferromagnetic layer. The first ferromagnetic layer includes a first direction of magnetic polarization. Furthermore, the spintronic device includes a second ferromagnetic layer. The second ferromagnet...  
WO/2018/175095A1
The proposed method for patterning a magnetic tunneling junction (MTJ) structure comprises providing a patterned mask (18) on a MTJ layer stack (16) formed over a bottom electrode (12) on a wafer (10), etching the stack to form a MTJ dev...  
WO/2018/175089A1
A stack of MTJ layers is provided on a substrate comprising a bottom electrode, a pinned layer, a tunnel barrier layer, a free layer, and a top electrode. The MTJ stack is patterned to form a MTJ device wherein sidewall damage is formed ...  
WO/2018/169676A1
A magnetic tunnel junction (MTJ) is disclosed wherein first and second interfaces of a free layer (FL) with a first metal oxide (Hk enhancing layer) and second metal oxide (tunnel barrier), respectively, produce perpendicular magnetic an...  
WO/2018/163618A1
[Problem] To provide a magnetic memory with which the occurrence of inversion errors can be suppressed and stable recording can be achieved. [Solution] A magnetic memory comprises: a spin orbit layer in which spin-polarized electrons are...  
WO/2018/163575A1
[Problem] To provide a ferromagnetic tunnel junction element and a method for manufacturing the same with which it is possible to avoid increasing the element occupation area and the number of manufacturing steps, while also avoiding var...  
WO/2018/162400A1
The invention relates to a current sensor comprising at least one primary circuit that is intended to conduct the current to be measured, and a secondary circuit comprising at least four Néel-effect®transducers, each consisting of a co...  
WO/2018/163583A1
Provided is a magnetic memory with which multivalued information can be recorded in a first memory cell (10) and an increase in the manufacturing costs can be suppressed, the magnetic memory comprising: first and second tunnel junction e...  
WO/2018/159624A1
This ferromagnetic multilayer film is provided with a first magnetization fixed layer, a first interposing layer, a second interposing layer, a magnetic coupling layer, and a second magnetization fixed layer. The first magnetization fixe...  
WO/2018/159129A1
This magnetoresistance effect element is provided with: a first ferromagnetic layer which serves as a fixed magnetization layer; a second ferromagnetic layer which serves as a free magnetization layer; and a non-magnetic spacer layer pro...  
WO/2018/159138A1
This magnetoresistance effect element is provided with: a first ferromagnetic layer which serves as a fixed magnetization layer; a second ferromagnetic layer which serves as a free magnetization layer; and a non-magnetic spacer layer pro...  
WO/2018/159776A1
Provided is a magnetic sensor which makes it possible to improve the frequency characteristics of output voltage. The magnetic sensor is provided with: a magnetic detection unit including first through fourth magnetoresistive effect elem...  
WO/2018/159057A1
Provided are a magnetic storage element, a magnetic storage device, and an electronic appliance. The magnetic storage element stores multi-value information and comprises: a plurality of tunnel junction elements (20, 30) that are electri...  
WO/2018/159396A1
A magnetoresistance effect device 1 is provided with a magnetoresistance effect element 2, and an external magnetic field application section 3 that applies an external magnetic field to the magnetoresistance effect element 2. The magnet...  
WO/2018/160286A1
A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utiliz...  
WO/2018/160285A1
A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utiliz...  
WO/2018/159015A1
This magnetoresistance effect element is provided with: a magnetization fixed layer; a magnetization free layer; and a nonmagnetic spacer layer laminated between the magnetization fixed layer and the magnetization free layer, wherein the...  
WO/2018/155077A1
This spin current magnetization rotating element is provided with a first ferromagnetic metal layer and spin-orbit torque wiring. The spin-orbit torque wiring has a laminated structure comprising alternating spin conducting layers and in...  
WO/2018/155478A1
A substrate processing device (10) and a processing system (100) according to an embodiment process substrates (W) having a magnetic layer individually and are provided with: a support unit (PP) for supporting the substrates; a heating u...  
WO/2018/155078A1
This spin current magnetization rotating element is provided with a first ferromagnetic metal layer and spin-orbit torque wiring. The spin-orbit torque wiring has a laminated structure comprising alternating spin conducting layers and in...  

Matches 651 - 700 out of 15,134