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WO/2022/230316A1 |
A magnetic sensor according to the present invention comprises a waveguide 1, a first electrode 2, a second electrode 3, and a detection electrode 4. On the waveguide 1, a first position 1A, a detection position 1C, and a second position...
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WO/2022/228166A1 |
Provided in the present invention are a preparation method for a hard mask, and a preparation method for a magnetic random access memory. When a magnetic tunnel junction thin film is etched on the basis of a hard mask which is composed o...
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WO/2022/224500A1 |
The purpose of the present invention is to provide a digital device for which an external magnetic field in unnecessary, which can be used as a memory element and random number generation element capable of outputting a comparatively lar...
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WO/2022/225623A1 |
An electronic circuit can have a first plurality of vertical Hall elements and a second plurality of vertical Hall elements all disposed on a substrate having a plurality of crystal unit cells, wherein the first plurality of vertical Hal...
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WO/2022/220251A1 |
A magnetic memory element (100) is provided with: an antiferromagnetic layer (110) that is laminated on a substrate (2) and comprises a canted antiferromagnetic body having a magnetic order with a canted magnetic moment; a heavy metal la...
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WO/2022/215367A1 |
A storage device (1) according to one embodiment of the present disclosure comprises an MTJ element (10) that is one example of a storage element having a storage layer which has a changeable magnetization direction, and an annular short...
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WO/2022/205235A1 |
Embodiments of the present application provide a memory and an electronic device, which relate to the technical field of memories, and can solve the problems of a rare earth-transition metal alloy having poor thermal stability and a pinn...
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WO/2022/209548A1 |
Each of a first magnetoresistance effect element and a second magnetoresistance effect element comprises an upper electrode (120), a lower electrode (130), and a magnetoresistance effect stack (110) disposed between the upper electrode (...
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WO/2022/209531A1 |
The present invention provides a current-perpendicular-to-plane giant magneto-resistive element that can use a high spin polarization rate (β) and spin asymmetry (γ) at the interface between layers, and that has a laminated structure f...
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WO/2022/208771A1 |
This magnetic sensor element (2) comprises a pin layer (21), a first non-magnetic layer (22), a first magnetic layer (23), and a free layer (24). The pin layer (21) has a fixed magnetization direction. The first non-magnetic layer (22) i...
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WO/2022/205737A1 |
The present disclosure provides a manufacturing method for a semiconductor structure, and a semiconductor structure. The manufacturing method for a semiconductor structure comprises the following steps: providing a substrate; forming a b...
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WO/2022/194598A1 |
A semiconductor device is provided. The semiconductor device includes a base layer, a first MRAM device formed on the base layer, and a second MRAM device formed on the base layer. The first MRAM device has a different performance charac...
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WO/2022/193290A1 |
An activation function generator based on a magnetic domain wall driving type magnetic tunnel junction, and a preparation method therefor. The activation function generator comprises: a spin-orbit coupling layer, which is configured to g...
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WO/2022/196741A1 |
Provided are: a magneto-resistive element in which the direction of magnetization in a recording layer can be efficiently reversed with low resistance and without reducing reversal efficiency by a write current flowing in a heavy metal l...
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WO/2022/194510A1 |
A modified double magnetic tunnel junction (mDMTJ) structure is provided which includes a narrow base and the use of a spin diffusion layer (i.e., non-magnetic, spin-conducting metallic layer) which gives a low resistance-area product (R...
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WO/2022/194515A1 |
A modified double magnetic tunnel junction structure is provided which includes an amorphous spin diffusion layer (i.e., an amorphous non-magnetic, spin-conducting metallic layer) sandwiched between a magnetic free layer and a first tunn...
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WO/2022/191065A1 |
The purpose of this disclosure is to increase the output of a magnetic sensor. The magnetic sensor (1) comprises a ceramic substrate (2), a GMR layer (5), and a base layer (4). The ceramic substrate (2) has a substrate main body (20) and...
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WO/2022/190346A1 |
This magnetoresistance effect element comprises: a laminate having a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer; first wiring...
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WO/2022/190854A1 |
[Problem] To improve a magnetic sensor comprising a ferromagnetic film having a multilayer structure. [Solution] A sensor chip 10 of a magnetic sensor 1 is provided with: a magnetically sensitive element R1; ferromagnetic films M1, M2 wh...
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WO/2022/190853A1 |
[Problem] To suppress reductions in the magnetic bias applied to a magnetoresistive element in a magnetic sensor provided with a magnetoresistive strip and a ferromagnetic film. [Solution] A magnetic sensor 1 provided with a magnetoresis...
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WO/2022/184392A1 |
The disclosed MRAM semiconductor structure (100) includes a magnetic tunnel junction (MTJ) layer (116) on top and in electrical contact with a microstud (114), a hard mask layer (118) on top of the MTJ layer, and a nonmetallic liner (130...
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WO/2022/183448A1 |
The present application provides a magnetic tunnel junction (MTJ), a magnetic random access memory and a manufacturing method therefor, and a storage device, which can avoid a short circuit problem caused by side wall reverse sputtering ...
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WO/2022/184123A1 |
A magnetic storage unit and a magnetic memory. The magnetic storage unit sequentially comprises from bottom to top a first electrode, a transition combination layer, a magnetic tunnel junction, and a second electrode. The first electrode...
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WO/2022/180929A1 |
This quantum bit array is provided with a semiconductor layer, an insulating layer arranged over the semiconductor layer, and a plurality of first gate electrodes arranged over the insulating layer and trapping electrons in a predetermin...
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WO/2022/181642A1 |
Provided is a magnetic material characterized by comprising a Co-based Heusler alloy that is a polycrystal and by having a film shape, the crystal structure of the Co-based Heusler alloy being one or more from the group consisting of an ...
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WO/2022/179618A1 |
A spin wave logic device and a related circuit. The spin wave logic device comprises a channel, and a drain and a source located above the channel. The source is used for generating a spin wave signal. The channel is used for transmittin...
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WO/2022/175273A1 |
A method for the manufacture of an improved graphene substrate and applications therefor There is provided a method (100) for the manufacture of an electronic device precursor, the method comprising: (i) providing a silicon wafer (200) h...
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WO/2022/176570A1 |
[Problem] To provide a magnetic sensor with which it is possible to detect, with high sensitivity, a to-be-measured magnetic field occurring due to a weak electrical current. [Solution] This magnetic sensor 1 comprises: a sensor chip 10 ...
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WO/2022/161792A1 |
A magnetic random-access memory (MRAM) structure is disclosed which includes a magnetic liner (160), comprising a ferromagnetic material, located between a top contact (180) and a magnetic tunnel junction (MTJ) stack (140) or an optional...
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WO/2022/158545A1 |
A photonic spin register (100) comprises: a shift register unit (104) having a magnetic material layer (124) of a shape extending in one direction; a light receiver (114) for receiving a serially input, pulse amplitude-modulated optical ...
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WO/2022/154901A1 |
A method for etching a metal containing material is provided. The metal containing material is exposed to a halogen containing fluid or plasma to convert at least some of the metal containing material into a metal halide material. The me...
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WO/2022/153861A1 |
This power generation element comprises: a magnetic member configured from a magnetic material that generates a large Barkhausen effect; a power generation coil via which magnetic flux that passes through the magnetic member is interlink...
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WO/2022/153356A1 |
This power generation element comprises a magnetic member that comprises a magnetic material that exhibits a large Barkhausen effect, a power generation coil that is interlinked with magnetic flux passing through the magnetic member, and...
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WO/2022/153366A1 |
This magnetic array has a plurality of magnetoresistance effect elements and a pulse application device that applies pulses to each of the plurality of magnetoresistance effect elements. Each of the plurality of magnetoresistance effect ...
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WO/2022/150315A1 |
A spin orbit torque memory device having a vertical transistor structure. The spin orbit torque memory device includes a magnetic memory element such as a magnetic tunnel junction formed on a spin orbit torque layer. The vertical transis...
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WO/2022/142672A1 |
A magnetic storage unit and a preparation method thereof, and a magnetic memory. Said method comprises sequentially providing a magnetic free layer, an insulating tunnel layer, a magnetic reference layer and a mask layer outwardly on the...
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WO/2022/142673A1 |
A preparation method for a magnetic memory cell, a magnetic memory cell, and a magnetic memory. The method comprises: sequentially arranging, from the surface of a preset spin-orbit torque metal substrate to outside, a magnetic free laye...
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WO/2022/142700A1 |
Provided is a semiconductor device. The semiconductor device comprises a substrate, wherein a first conductive structure pattern and a magnetic tunnel junction array, which is located above the first conductive structure pattern, are arr...
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WO/2022/141306A1 |
The embodiments of the present application relate to the field of logical operations, and provide a logic chip and an electronic device, which allow a magnetic domain wall logic device having a NAND function and a magnetic domain wall lo...
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WO/2022/142097A1 |
The present application provides a magnetoresistive random access memory and a read-write method therefor. The magnetoresistive random access memory comprises at least one unit layer, wherein the unit layer comprises: several parallel fi...
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WO/2022/141226A1 |
The present disclosure provides a multi-resistive spin electronic device, comprising: a top electrode and a bottom electrode respectively connected to a read-write circuit; and a magnetic tunnel junction located between the two electrode...
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WO/2022/143534A1 |
Embodiments of the present application relate to the technical field of storage, and provide a storage device and a preparation method, a read-write method, a storage chip, and an electronic device, for use in solving the problem that th...
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WO/2022/142128A1 |
A magnetic memory and a read/write method therefor. The magnetic memory comprises: at least one unit layer (100), the unit layer (100) comprising several parallel first wires (110) and second wires (120), the first wires (110) being loca...
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WO/2022/135153A1 |
Provided by the present invention is a method for optimizing a fixed layer in a magnetic tunnel junction (MTJ) structure, comprising the following steps: reducing the thickness of the magnetic layer of the fixed layer; adjusting the magn...
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WO/2022/137284A1 |
This magnetoresistance effect element comprises a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer. At least one of the firs...
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WO/2022/134953A1 |
A method of manufacturing a double magnetic tunnel junction device is provided. The method includes forming a first magnetic tunnel junction stack, forming a spin conducting layer on the first magnetic tunnel junction stack, forming a se...
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WO/2022/138671A1 |
A magnetic sensor comprising: a sensor head including a magnetic material; a drive unit for energizing the sensor head; a pickup coil disposed in proximity to the sensor head; and an information processing unit for energizing the pickup ...
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WO/2022/128646A1 |
A memory device, and a method of forming the same, includes a bottom electrode above an electrically conductive structure, the electrically conductive structure is embedded in an interconnect dielectric material. A magnetic tunnel juncti...
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WO/2022/131115A1 |
A semiconductor device (1) according to one embodiment of the present disclosure comprises a storage element (31), an upper electrode (32), a lower electrode (33), a protective film (6) and a hydrogen adjustment region (7). The storage e...
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WO/2022/131060A1 |
The present invention addresses the problem of improving environment resistance. A magnetic sensor (10) comprises an insulated substrate (1), one or more magnetoresistive elements (2), a conductor (3), and a sealing member (4). The condu...
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