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Matches 351 - 400 out of 15,134

Document Document Title
WO/2020/166141A1
Provided are a magnetic laminated film that is capable of improving write efficiency, and a magnetic memory element and magnetic memory that use the magnetic laminated film. The magnetic laminated film 1 is a laminated film for a magneti...  
WO/2020/161957A1
A film forming apparatus according to the present invention comprises: a treatment vessel; a substrate holder for holding a substrate within the treatment vessel; a target electrode, disposed above the substrate holder, for holding a met...  
WO/2020/161814A1
This spin-orbit torque-type magnetization rotating element (100) of the present application comprises: a first ferromagnetic layer (10); and a spin-orbit torque wiring (20) facing the first ferromagnetic layer and extending in a first di...  
WO/2020/158323A1
Provided is a magnetoresistance effect element comprising a first electrode (10), a fixed magnetic layer (120) in which the magnetization direction is fixed, a first insulating layer (130), a free magnetic layer (140) in which the magnet...  
WO/2020/160358A1
Magnetic memory devices are provided. The devices comprise a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer composed of a doped semiconductor (instead of an insulator or a dielectric) between the firs...  
WO/2020/160092A1
One or more layers of a magnetic random access memory (MRAM) stack on a substrate are etched by ion beam etching. An ion beam of an inert gas is generated in an ion beam source chamber and applied to a substrate in a continuous or pulsed...  
WO/2020/153651A1
A neural network simulator according to an embodiment of the present invention may comprise: a first neuron simulator including a first magnetic tunnel junction structure for outputting a first output stream in which a low level and a hi...  
WO/2020/149375A1
The present invention makes it possible to increase an applied magnetic field on a sliding surface side of a magnetic identification sensor, thereby increasing an output of the sensor and stabilizing waveforms. Provided is a magnetic ide...  
WO/2020/149624A1
A logic gate based on a magnetic tunnel junction structure, according to one embodiment of the present invention, comprises: a single magnetic tunnel junction structure which has a tunneling barrier layer and a free layer laminated in or...  
WO/2020/150451A1
The present disclosure is drawn to, among other things, a magnetoresistive device and a magnetoresistive memory comprising a plurality of such magnetoresistive devices. In some aspects, a magnetoresistive device may include a magneticall...  
WO/2020/150419A1
A magnetic tunnel junction device is disclosed comprising a first device layer comprising a material having a magnetic moment; a second device layer comprising a material having a magnetic moment, e.g., wherein the magnetic moment of the...  
WO/2020/142898A1
Disclosed are a regulatable magnetic skyrmion material, a preparation method therefor and a use thereof. The magnetic skyrmion material is mainly composed of a magnetic material and two-dimensional elemental nanosheets embedded in the ma...  
WO/2020/142440A1
A method of forming a transistor, according to one embodiment, includes: forming an doped material, depositing an oxide layer on the doped material, depositing a conducting layer on the oxide layer, patterning the conducting layer to for...  
WO/2020/141848A1
Disclosed is an operation method of a neural network element using a Hall voltage. The neural network element has a hole pattern portion, and the hole pattern portion has a cross shape. When a pulse current is applied, horizontal magneti...  
WO/2020/136267A1
The present invention relates to an electronic device (10), comprising an input (12) and an output (14), the device (10) generating an output voltage when the input of the device (10) is supplied, the device (10) comprising: - a conversi...  
WO/2020/137861A1
[Problem] To provide a magnetic sensor capable of reducing 1/f noise by mechanically displacing a magnetic path, without using an MEMS structure requiring a high temperature process. [Solution] This magnetic sensor 1 comprises: a sensor ...  
WO/2020/137558A1
The present invention provides an exchange coupling film (10) in which a magnetic field (Hex) is high, the magnetic field being such that the orientation of magnetism of a fixed magnetic layer is reversed, and which has exceptional ferro...  
WO/2020/137341A1
Provided is a nonvolatile logic circuit that uses the non-complementarity of a pair of variable-resistance memory elements to achieve enhanced functionality without an increase in circuit scale. A nonvolatile logic circuit (10) that comp...  
WO/2020/137119A1
This magnetic sensor (1) is provided with: a non-magnetic substrate (10); and a sensing element (31) which is provided with a plurality of soft magnetic layers (105) (a lower soft magnetic layer (105a) and an upper soft magnetic layer (1...  
WO/2020/135053A1
Provided in the present invention are a magnetic storage unit and an SOT-MRAM memory. The magnetic storage unit comprises: a spin orbit torque providing line and two magnetic tunnel junctions, wherein each of the magnetic tunnel junction...  
WO/2020/131893A2
A method of fabricating a magnetic storage device includes depositing a first conductive material. The method further includes electrically isolating distinct instances of the first conductive material to form a first wire extending alon...  
WO/2020/131571A1
An example three-dimensional (3-D) memory array includes a substrate material including a plurality of conductive contacts arranged in a staggered pattern and a plurality of planes of a conductive material separated from one another by a...  
WO/2020/131279A1
Spintronic devices based on metallic antiferromagnets having a non-collinear spin structure are provided. Also provided are methods for operating the devices. The spintronic devices are based on a bilayer structure that includes a spin t...  
WO/2020/127970A1
One aspect of the invention relates to a process for fabricating a spintronic device including at least one amagnetic spacer, a reference layer and a storage layer including at least one magnetic pillar, comprising the following steps: -...  
WO/2020/130343A1
The present invention provides a selection device and a memory device including same. The selection device according to an embodiment of the present invention has a high reliability and a high selection ratio, and thus can provide a high...  
WO/2020/131206A1
Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications, particularly for spin-orbit-torque magnetic random access memory (SOT MRAM) appli...  
WO/2020/110360A1
The purpose of the present invention is to provide: a magnetoresistive element having a large magnetoresistance change ratio (MR ratio); and a magnetic sensor, a reproducing head and a magnetic recording and reproducing device, each of w...  
WO/2020/110296A1
This spin-orbit torque magnetization rotation element is provided with: a first ferromagnetic layer; a spin-orbit torque wire having a first surface facing the first ferromagnetic layer and a major axis extending in a first direction in ...  
WO/2020/111862A1
A magnetic sensor using the anomalous Hall effect is disclosed. In order to form a Hall voltage corresponding to a change in the applied magnetic field, the magnetic sensor comprises a ferromagnetic material and non-magnetic metal layers...  
WO/2020/110407A1
This magnetic sensor 1 comprises: a nonmagnetic substrate 10; a sensing element 31 that is laminated on the substrate 10, is configured from a soft magnetic material, has a long direction and short direction, has uniaxial magnetic anisot...  
WO/2020/105263A1
The present invention widens a frequency difference (synchronization range) in which phase synchronization between spin torque oscillators (STOs) can be captured, thereby reducing the impact of manufacturing variations and improving the ...  
WO/2020/105877A1
A memory device is disclosed. A memory device according to one embodiment of the present invention comprises a lower electrode, a seed layer, a composite interchange diamagnetic layer, a magnetic tunnel junction and an upper electrode, w...  
WO/2020/104998A1
A Hall integrated circuit including a vertical Hall element (100), having a first wafer (10) and a second wafer (20) stacked in a vertical direction (z), the second wafer (20) including a CMOS substrate (201) integrating a CMOS processin...  
WO/2020/106552A1
A magnetoresistive stack/ structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed o...  
WO/2020/106387A1
Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate in for hybrid (or called integrated) spin-orbit-torque magnetic spin-transfer-torque magnetic random acc...  
WO/2020/106378A1
Disclosed herein is an improved SOT-MRAM device and method of manufacture thereof. A memory device includes a first structure that includes a magnetic tunnel junction stack and a spin-orbit torque layer. The spin-orbit torque layer is fo...  
WO/2020/097872A1
A magneto-resistive random storage unit (20) and a magneto-resistive random memory, can improve the reading/writing speed of the memory. The magneto-resistive random storage unit (20) comprises: a fixed ferromagnetic layer (21) having a ...  
WO/2020/095785A1
A magnetoresistive element according to the present disclosure comprises a multilayer structure 40 that is composed of at least a magnetization fixed layer, an intermediate layer and a storage layer; a first side wall 51 is formed on a l...  
WO/2020/095753A1
This magnetoresistive element has a layered structure 50 that includes at least a fixed magnetic layer, an intermediate layer, and a storage layer, wherein the layered structure 50 has a metal layer 61 formed thereon or thereabove, an or...  
WO/2020/093681A1
A semiconductor device manufacturing method, wherein the etching apparatus used comprises a sample loading chamber (15), a vacuum transition chamber (14), a reactive ion plasma etching chamber (10), an ion beam etching chamber (11), a co...  
WO/2020/095360A1
This domain wall motion type magnetic recording element (100) is provided with: a domain wall motion layer (10) in which first layers (11) that contain a rare earth metal and second layers (12) that contain a transition metal are alterna...  
WO/2020/092347A1
A magnetoresistive stack includes a fixed magnetic region, one or more dielectric layers disposed on and in contact with the fixed magnetic region, and a free magnetic region disposed above the one or more dielectric layers. The fixed ma...  
WO/2020/087914A1
Disclosed is method for etching a magnetic tunnel junction. An etching apparatus used comprises a sample loading chamber (15), a vacuum transition chamber (14), a reactive ion and plasma etching chamber (10), an ion beam etching chamber ...  
WO/2020/090333A1
Provided is a magneto-sensitive wire, which exhibits a stable anisotropic magnetic field even in high temperature environments and with which expansion of the measurement range of MI sensors, etc. can be achieved. The present invention i...  
WO/2020/090719A1
A spin torque generating element 10 comprises: a conductive layer 1 supplied with a current Jc; an insulating layer 2 formed on a surface on one side of the conductive layer 1; and a ferromagnetic layer 3 formed on a surface on the other...  
WO/2020/090914A1
Provided is a CoPt-oxide-based in-plane magnetized film which has a magnetic coercive force Hc of 2.00 kOe or more and has remanent magnetization Mrt per unit area of 2.00 memu/cm2 or more. An in-plane magnetized film (10) for use as a h...  
WO/2020/087916A1
Provided is an etching method for single-isolated magnetic tunnel junction, the etching device used includes a sample loading chamber, a vacuum transition chamber, a reactive ion etching chamber, an ion beam etching chamber, a coating ch...  
WO/2020/087917A1
Provided is a method for manufacturing a magnetic tunnel junction, employing an etching device that comprises: a sample loading chamber (15), a vacuum transition chamber (14), a reactive-ion plasma etching chamber (10), an ion beam etchi...  
WO/2020/082223A1
A black phosphorus-like ultra-thin bismuth nano-sheet modified compound film and a preparation method therefor. The compound film comprises a base film and a black phosphorus-like bismuth nano-sheet intercalation in the base film. Realiz...  
WO/2020/084953A1
[Problem] The objective of the present invention is to provide a magnetic sensor with which it is possible to reduce 1/f noise by causing a magnetic path to be displaced mechanically, without using a MEMS structure requiring high-tempera...  

Matches 351 - 400 out of 15,134