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Matches 1 - 50 out of 19,279

Document Document Title
WO/2019/005172A1
A spin orbit torque (SOT) memory device includes a spin orbit torque electrode disposed in a dielectric layer above a substrate and a magnetic tunnel junction (MTJ) device disposed on a portion of the spin orbit torque electrode. The spi...  
WO/2019/005173A1
An apparatus is provided which comprises: a first magnet; a stack of layers, a portion of which is adjacent to the first magnet, wherein the stack of layers is to provide an inverse spin-orbit coupling effect; a second magnet; one or mor...  
WO/2019/005149A1
An apparatus is provided which comprises: a magnetic junction having a free magnet layer; and an interconnect adjacent to the free magnet layer, wherein the interconnect includes a material to provide spin orbit coupling to the free magn...  
WO/2019/005544A1
A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM device reduces stray magnetic fields generated by magnetic layers of the stack, including a reference layer and magnetic layers of the synthetic antiferromagnetic laye...  
WO/2019/005164A1
A memory device includes a bottom electrode, a fixed magnet above the bottom electrode, a tunnel barrier on the fixed magnet, a free magnet on the tunnel barrier. One of the free magnet or the fixed magnet includes a magnetic alloy consi...  
WO/2019/002761A1
A method for controlling a spin qubit quantum device (100) comprising: - a semiconducting portion (102); - a dielectric layer (104) covered by the semiconducting portion; - a front gate (108) partially covering an upper edge (113) of the...  
WO/2019/002453A1
The invention concerns a two-dimensional electron gas field-effect transistor (10) comprising: - a drain (14), - a source (16), - a heterojunction (22) comprising: - a first planar layer (26), the first layer (26) being produced from a f...  
WO/2019/005147A1
An apparatus is provided which comprises: a magnetic junction having a free magnet layer which has perpendicular magnetic anisotropy (PMA), wherein the free magnet layer has anisotropy axis perpendicular to a plane of a device; and an in...  
WO/2019/005163A1
A memory structure includes a conductive interconnect disposed above a substrate, a memory device disposed above the conductive interconnect and coupled with the conductive interconnect. The memory device has sidewalls and an uppermost s...  
WO/2019/005128A1
MTJ material stacks including one or more nano-contact, MTJ devices employing such stacks, and computing platforms employing such MTJ devices. Nano-contacts having lateral dimensions smaller than the lateral dimensions of a free magnet l...  
WO/2019/005146A1
An apparatus is provided which comprises: a first semi-insulating magnet; a first magnet with non-insulating properties adjacent to the first semi-insulating magnet; a stack of layers, a portion of which is adjacent to the first magnet, ...  
WO/2019/005176A1
An apparatus is provided which comprises: a magnet; a stack of layers, a portion of which is adjacent to the magnet, wherein the stack of layers is to provide an inverse spin-orbit coupling effect; a layer exhibiting magnetoelectric prop...  
WO/2019/005160A1
A memory device includes a bottom electrode comprising a non-stoichiometric tantalum nitride layer. A synthetic antiferromagnetic layer is disposed above the bottom electrode. A fixed magnet is disposed above the synthetic antiferromagne...  
WO/2019/005158A1
A spin orbit torque (SOT) memory device includes a spin orbit torque electrode disposed in a dielectric layer above a substrate and a magnetic tunnel junction (MTJ) device disposed on a portion of the spin orbit torque electrode. The spi...  
WO/2019/005127A1
MTJ material stacks including one or more nano-contact, MTJ devices employing such stacks, and computing platforms employing such MTJ devices. Nano-contacts having lateral dimensions smaller than the lateral dimensions of a free magnet l...  
WO/2019/005076A1
MTJ material stacks including a carbon-doped ferromagnetic material, MTJ devices employing such stacks, and computing platforms employing such MTJ devices. A free magnet with one or more ferromagnetic material layer that includes carbon ...  
WO/2019/005034A1
Apparatuses including perpendicular magnetic tunnel junctions having free and fixed magnet layers with perpendicular magnetic anisotropy separated by a barrier layer and an in- plane magnet layer with in-plane magnetic anisotropy adjacen...  
WO/2019/005082A1
MTJ material stacks including one or more material layers that have outdiffused one or more dopants through a layer sidewall edge, MTJ devices employing such stacks, and computing platforms employing such MTJ devices. A free magnet layer...  
WO/2019/005177A1
An apparatus is provided which comprises: a magnet with non-insulating properties; a semi-insulating or insulating magnet adjacent to the magnet; and a stack of layers, a portion of which is adjacent to the magnet with non-insulating pro...  
WO/2019/005175A1
An apparatus is provided which comprises: a first magnet; a stack of layers, a portion of which is adjacent to the first magnet, wherein the stack of layers is to provide an inverse spin-orbit coupling effect; a capacitive device coupled...  
WO/2019/005026A1
An apparatus is provided which comprises: a planar dielectric surface, two or more conductive leads on the surface, the conductive leads extending away from the substrate surface, two or more conductive traces on the surface between the ...  
WO/2019/005083A1
MTJ material stacks including a carbon-doped filter layer, MTJ devices employing such material stacks, and computing platforms employing such MTJ devices. A composite fixed magnet structure may include one or more ferromagnetic material ...  
WO/2019/005129A1
A spin Hall effect magnetoresistive random-access memory cell includes first and second access transistors in a device level of a semiconductor device, a wordline in the device level and coupled to gate terminals of the first and second ...  
WO/2019/005157A1
A memory device includes a bottom electrode disposed above a substrate, a fixed magnet disposed above the bottom electrode, a tunnel barrier including a magnesium oxide disposed on the fixed magnet, a free magnet on the tunnel barrier, a...  
WO/2019/005168A1
A memory device includes a wordline disposed above a substrate and a selector element disposed above the wordline, where the selector element includes a phase change material. The memory device further includes a bipolar memory element d...  
WO/2019/005162A1
A material layer stack for a memory device includes a first electrode, a magnetic tunnel junction disposed above the first electrode, a metallic barrier layer disposed on the magnetic tunnel junction, an insulator-metal transition (IMT) ...  
WO/2019/005156A1
A spin orbit torque (SOT) memory device includes a spin orbit torque electrode disposed in a dielectric layer above a substrate and a magnetic tunnel junction (MTJ) device disposed on a portion of the spin orbit torque electrode. The spi...  
WO/2019/005075A1
Apparatuses including a non-conformal sidewall material layer adjacent to a sloped sidewall magnetic tunnel junction stack having a fixed magnet layer and a free magnet layer separated by a barrier layer and a terminal electrode, systems...  
WO/2018/236360A1
Phase field effect transistors (Phase FETs) having ferroelectric gate dielectrics are described. In an example, an integrated circuit structure includes a channel layer above a substrate. The channel layer is composed of a material havin...  
WO/2018/236369A1
Embodiments are generally directed to enhanced materials processing for magneto-electric spin orbit (MESO) devices. An embodiment of an apparatus includes a first transistor and a second transistor, each transistor including a gate elect...  
WO/2018/236366A1
Embodiments are generally directed to colossal magnetoresistance for magnetic read out utilizing Heusler alloys. An embodiment of a spin logic device includes a magnetic tunnel junction, which includes a stack including a plurality of la...  
WO/2018/236356A1
Ferroelectric field effect transistors (FeFETs) having compound semiconductor channels are described. In an example, an integrated circuit structure includes a semiconductor channel layer above a substrate. The semiconductor channel laye...  
WO/2018/236403A1
Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gate lines above the quantum well stack; a plurality of second g...  
WO/2018/236121A1
The present invention provides a magnetic tunnel junction device and a manufacturing method therefor. The magnetic tunnel junction device comprises a heavy metal layer, a free magnetic layer disposed on the heavy metal layer, and a tunne...  
WO/2018/230466A1
Provided is a ferromagnetic tunnel junction which, as a tunnel barrier layer disposed between a first magnetic layer and a second magnetic layer, is an oriented crystal body having a laminated structure of a first insulating layer and a ...  
WO/2018/227901A1
A vertically magnetized MTJ device and an STT-MRAM. The vertically magnetized MTJ device comprises a reference layer (2), an insulation barrier layer (3), a free layer (4), an enhancing layer (5), a demagnetization coupling layer (6) and...  
WO/2018/231522A1
A plasma enhanced chemical vapor deposition (PECVD) method is disclosed for forming a SiON encapsulation layer on a magnetic tunnel junction (MTJ) sidewall that minimizes attack on the MTJ sidewall during the PECVD or subsequent processe...  
WO/2018/230262A1
In order to improve the linearity of rising pulse detection to 0.5% or less to enhance magnetic sensitivity and linearity, which are advantages of rising pulse detection, this magnetic sensor has a configuration in which two magnetic wir...  
WO/2018/231695A1
A process and device is disclosed for etching a magnetroresistive random access memory device which includes at least one magnetic tunnel junction stack structure which includes an insulating layer disposed between first and second magne...  
WO/2018/230116A1
A magnetic sensor 1 is provided with: a thin film magnet 20 that is formed of a hard magnetic material and that possesses magnetic anisotropy in an in-plane direction; a sensitive part 30 that is formed of a soft magnetic material, that ...  
WO/2018/224928A1
A magnetic tunnel junction (MTJ) storage element includes a reference layer, a tunnel barrier and a free layer on an opposite side of the tunnel barrier layer from the reference layer. The reference layer has a fixed magnetization direct...  
WO/2018/224929A1
A magnetic tunnel junction (MTJ) storage element includes a reference layer, a tunnel barrier and a free layer on an opposite side of the tunnel barrier layer from the reference layer. The reference layer has a fixed magnetization direct...  
WO/2018/221260A1
Provided is a magnetic sensor having enhanced accuracy or reliability. The magnetic sensor is equipped with a first magnetism detection element that outputs a first detection signal, a second magnetism resistance detection element that o...  
WO/2018/213107A1
Processes for forming magnetic tunnel junction (MTJ) nanopillars (la) with minimal sidewall residue and damage are disclosed wherein a pattern is first formed in a hard mask (15) that is an uppermost MTJ layer. Thereafter, the hard mask ...  
WO/2018/213223A1
A seed layer stack (23t) with a uniform top surface having a peak to peak roughness of 0.5 nm is formed by sputter depositing an amorphous layer (22) on a smoothing layer (21) such as Mg where the latter has a resputtering rate 2 to 30X ...  
WO/2018/206591A1
The present invention relates to a method for tuning the magnetic coercivity of a nanoporous film, a device and uses thereof The method comprises: - providing a thick nanoporous film having a thickness above 10 nm and an average nanopore...  
WO/2018/208507A1
A semiconductor structure includes an electrode, a ferroelectric material adjacent the electrode, the ferroelectric material comprising an oxide of at least one of hafnium and zirconium, the ferroelectric material doped with bismuth, and...  
WO/2018/204832A1
Methods and means for the automated manufacturing of linear permanent magnet (PM) arrays in rows. A convergence device may be used that restricts movement of PM elements from PM cartridges as the PM elements are formed into PM array rows...  
WO/2018/204755A1
A system and a method for the deterministic generation of magnetic skyrmions includes a magnetic strip configured to store and transport skyrmions. The magnetic strip includes one or more spatial inhomogeneities configured to generate a ...  
WO/2018/204785A1
A multilayer structure comprising FM/NM/FM layers enhances the amplitude of the unidirectional spin Hall magnetoresi stance (USMR) thanks to an additional FM/NM layer interface. The USMR can be used to detect the in-plane magnetization d...  

Matches 1 - 50 out of 19,279