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Matches 1 - 50 out of 19,076

Document Document Title
WO/2018/186986A1
A method for etching a magnetic tunneling junction (MTJ) structure is described. A stack of MTJ layers (14) is provided on a bottom electrode (12). A top electrode (16) is provided on the MTJ stack. The top electrode is patterned. Therea...  
WO/2018/186971A1
A magnetic tunnel junction with perpendicular magnetic anisotropy (PMA MTJ) is disclosed wherein a free layer (14) has an interface (20) with a tunnel barrier (13) and a second interface (21) with an oxide layer (15). A lattice-matching ...  
WO/2018/186983A1
A method for etching a magnetic tunneling junction (MTJ) structure is described. A bottom electrode layer (12) is provided on a substrate (10). A seed layer (16) is deposited on the bottom electrode layer. The seed layer and bottom elect...  
WO/2018/186826A1
Embodiments are generally directed to optical transduction for Magneto-Electric Spin Orbit (MESO) logic. An embodiment of an apparatus includes an optical waveguide to receive an optical input; and an optical to electrical transducer, th...  
WO/2018/186863A1
An embedded spin-transfer torque magnetic random-access memory (STT-MRAM) memory cell includes: a wordline to supply a gate signal; a selector thin-film transistor (TFT) including an active layer and configured to electrically connect a ...  
WO/2018/186982A1
A magnetic device for magnetic random access memory (MRAM) technology comprises perpendicularly magnetized magnetic tunnel junctions (p-MTJs, 11a, 11b), each having a sidewall (11s1, 11s2) formed between a bottom electrode (10a) and a to...  
WO/2018/185991A1
[Problem] To provide a magnetic storage element in which a writing current is reduced while maintaining the magnetism-retaining characteristics of a storage layer; and an electronic device. [Solution] A magnetic storage element, provided...  
WO/2018/182740A1
Techniques are disclosed for forming magnetic random access memory (MRAM) devices and logic devices that includes a layer of material to induce a spin Hall effect (SHE) that is in contact with a layer of a spin absorption material. Dispo...  
WO/2018/182644A1
An embodiment includes an apparatus comprising: a magnetic tunnel junction (MTJ) including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier layer between the free and fixed magnetic layers; and a layer including a memb...  
WO/2018/182650A1
A material layer stack for a pSTTM memory device includes a fixed magnetic layer, a tunnel barrier disposed above the fixed magnetic layer and a free magnetic layer disposed on the tunnel barrier. In an embodiment, the free magnetic laye...  
WO/2018/179961A1
According to this embodiment, a magnetic element includes a first layer and a second layer. The first layer contains a first element containing at least one selected from the group consisting of Fe, Co, and Ni and a second element contai...  
WO/2018/179660A1
Provided are a magnetoresistance effect element and a magnetic memory. The direction of magnetization of a storage layer is vertical with respect to a film surface in the magnetoresistance effect element, which has a high thermal stabili...  
WO/2018/180701A1
This spin-current magnetization reversal element is provided with: a first ferromagnetic metal layer of which a magnetization direction varies; and a spin orbit torque wiring which extends in a second direction intersecting a first direc...  
WO/2018/182697A1
A magnetic tunnel junction (MTJ) device, includes an MTJ material layer stack having an uppermost surface, a lowermost surface, and a sidewall ending from the uppermost surface to the lowermost surface. The MTJ material stack includes a ...  
WO/2018/182667A1
An embodiment includes an apparatus comprising: a magnetic tunnel junction (MTJ) including a fixed magnetic layer and a tunnel barrier layer; a first layer on the tunnel barrier layer; a second layer on the first layer; and an oxide laye...  
WO/2018/182698A1
A material layer stack for a pSTTM device includes a magnetic tunnel junction (MTJ) having a fixed magnetic layer, a tunnel barrier disposed above the fixed magnetic layer and a free magnetic layer disposed on the tunnel barrier. An oxid...  
WO/2018/182651A1
A magnetic tunnel junction (PSTTM) device includes a bottom electrode, a fixed magnet above the bottom electrode, a tunnel barrier disposed above the fixed magnet, a free magnet disposed on the tunnel barrier, an oxide layer disposed abo...  
WO/2018/182645A1
An embodiment includes an apparatus comprising: a magnetic tunnel junction (MTJ) including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier layer between the free and fixed layers; and first, second, and third layers; ...  
WO/2018/179193A1
Provided are: a memory element that is capable of efficiently storing, as a selection value, a continuous quantity or multi-valued discrete quantity; and a method for driving a memory element. A memory element (10) has a structure in whi...  
WO/2018/182663A1
An embodiment includes an apparatus comprising: a magnetic tunnel junction (MTJ) including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier layer between the free and fixed magnetic layers; and an oxide layer, directly...  
WO/2018/180655A1
The purpose of the present invention is to provide a method which makes it possible, in a dry process using no plasma, to remove an element constituting material including a stable metal element, such as Ru or Ta, from a surface of an ob...  
WO/2018/182642A1
An embodiment includes an apparatus comprising: a magnetic tunnel junction (MTJ) including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier layer between the free and fixed layers; the tunnel barrier layer directly con...  
WO/2018/175070A1
A magnetic device for magnetic random access memory (MRAM) technology comprises a magnetic tunnel junction (MTJ, 11a) with a sidewall (11s1) formed between a bottom electrode (10a) and a top electrode (14a). A passivation layer (12) that...  
WO/2018/174877A1
A spintronic device includes a first ferromagnetic layer. The first ferromagnetic layer includes a first direction of magnetic polarization. Furthermore, the spintronic device includes a second ferromagnetic layer. The second ferromagnet...  
WO/2018/175095A1
The proposed method for patterning a magnetic tunneling junction (MTJ) structure comprises providing a patterned mask (18) on a MTJ layer stack (16) formed over a bottom electrode (12) on a wafer (10), etching the stack to form a MTJ dev...  
WO/2018/175089A1
A stack of MTJ layers is provided on a substrate comprising a bottom electrode, a pinned layer, a tunnel barrier layer, a free layer, and a top electrode. The MTJ stack is patterned to form a MTJ device wherein sidewall damage is formed ...  
WO/2018/169676A1
A magnetic tunnel junction (MTJ) is disclosed wherein first and second interfaces of a free layer (FL) with a first metal oxide (Hk enhancing layer) and second metal oxide (tunnel barrier), respectively, produce perpendicular magnetic an...  
WO/2018/163618A1
[Problem] To provide a magnetic memory with which the occurrence of inversion errors can be suppressed and stable recording can be achieved. [Solution] A magnetic memory comprises: a spin orbit layer in which spin-polarized electrons are...  
WO/2018/163575A1
[Problem] To provide a ferromagnetic tunnel junction element and a method for manufacturing the same with which it is possible to avoid increasing the element occupation area and the number of manufacturing steps, while also avoiding var...  
WO/2018/162400A1
The invention relates to a current sensor comprising at least one primary circuit that is intended to conduct the current to be measured, and a secondary circuit comprising at least four Néel-effect®transducers, each consisting of a co...  
WO/2018/163583A1
Provided is a magnetic memory with which multivalued information can be recorded in a first memory cell (10) and an increase in the manufacturing costs can be suppressed, the magnetic memory comprising: first and second tunnel junction e...  
WO/2018/159624A1
This ferromagnetic multilayer film is provided with a first magnetization fixed layer, a first interposing layer, a second interposing layer, a magnetic coupling layer, and a second magnetization fixed layer. The first magnetization fixe...  
WO/2018/159129A1
This magnetoresistance effect element is provided with: a first ferromagnetic layer which serves as a fixed magnetization layer; a second ferromagnetic layer which serves as a free magnetization layer; and a non-magnetic spacer layer pro...  
WO/2018/159138A1
This magnetoresistance effect element is provided with: a first ferromagnetic layer which serves as a fixed magnetization layer; a second ferromagnetic layer which serves as a free magnetization layer; and a non-magnetic spacer layer pro...  
WO/2018/159776A1
Provided is a magnetic sensor which makes it possible to improve the frequency characteristics of output voltage. The magnetic sensor is provided with: a magnetic detection unit including first through fourth magnetoresistive effect elem...  
WO/2018/159057A1
Provided are a magnetic storage element, a magnetic storage device, and an electronic appliance. The magnetic storage element stores multi-value information and comprises: a plurality of tunnel junction elements (20, 30) that are electri...  
WO/2018/159396A1
A magnetoresistance effect device 1 is provided with a magnetoresistance effect element 2, and an external magnetic field application section 3 that applies an external magnetic field to the magnetoresistance effect element 2. The magnet...  
WO/2018/160286A1
A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utiliz...  
WO/2018/160285A1
A magnetoresistive random-access memory (MRAM) is disclosed. MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utiliz...  
WO/2018/159015A1
This magnetoresistance effect element is provided with: a magnetization fixed layer; a magnetization free layer; and a nonmagnetic spacer layer laminated between the magnetization fixed layer and the magnetization free layer, wherein the...  
WO/2018/155077A1
This spin current magnetization rotating element is provided with a first ferromagnetic metal layer and spin-orbit torque wiring. The spin-orbit torque wiring has a laminated structure comprising alternating spin conducting layers and in...  
WO/2018/155478A1
A substrate processing device (10) and a processing system (100) according to an embodiment process substrates (W) having a magnetic layer individually and are provided with: a support unit (PP) for supporting the substrates; a heating u...  
WO/2018/155078A1
This spin current magnetization rotating element is provided with a first ferromagnetic metal layer and spin-orbit torque wiring. The spin-orbit torque wiring has a laminated structure comprising alternating spin conducting layers and in...  
WO/2018/155701A1
[Problem] To provide a magnetic sensor that prevents noise from being generated by electromagnetic waves from the outside. [Solution] The present invention comprises: a magnetoresistance effect element 11 that is provided upon a substrat...  
WO/2018/155562A1
This magnetization reversal element is provided with: a ferromagnetic metal layer; and a spin orbit torque wire which extends in a first direction intersecting a stacking direction of the ferromagnetic metal layer and on one surface of w...  
WO/2018/151987A1
Methods, systems, and apparatus that support efficient utilization of die area for crosspoint memory architecture are described. A memory array may include active memory cells overlying each portion of the substrate that includes certain...  
WO/2018/152108A1
A method for processing a substrate including a magnetoresistive random access memory (MRAM) stack includes providing a substrate including the MRAM stack and creating a first mask layer on a surface of the MRAM stack. The first mask lay...  
WO/2018/146525A1
The present invention relates to a magnetic and electromagnetic device that molecularly modifies non-combustible fluids, liquids and gases by means of magnetic turbulence. The device combines magnetic and electromagnetic fields for produ...  
WO/2018/146984A1
A semiconductor device according to one embodiment of this disclosure is provided with: a first substrate having an active element formed therein; and a second substrate that is stacked with the first substrate and that is electrically c...  
WO/2018/144428A1
An electromagnetic coil assembly (34) includes a coil sub-assembly (34C) and a tower sub-assembly (34T). The coil sub-assembly includes a coil housing (70) having a first opening (70-4A; 70-4B), a coil winding (72), a tower mount (74) ha...  

Matches 1 - 50 out of 19,076