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Matches 1 - 50 out of 18,713

Document Document Title
WO/2018/071162A1
A process sequence is provided to provide an ultra-smooth (0.2 nm or less) bottom electrode surface for depositing magnetic tunnel junctions thereon. In one embodiment, the sequence includes forming a bottom electrode pad through bulk la...  
WO/2018/069389A1
The invention relates to a method for generating a plurality of second currents (C2), each having a second frequency component, from a first electric current (C1) having a first frequency, said method comprising the following steps: a fr...  
WO/2018/070112A1
This magnetic detection element is provided with: an element part (20) which includes a plurality of linear sections (21) arranged in parallel with one another and a plurality of connection sections (22) connecting the plurality of linea...  
WO/2018/067070A1
A magnetoresistance sensor There is provided a magnetoresistance sensor comprising a graphene-black phosphorus hybrid structure, wherein the graphene-black phosphorus hybrid structure comprises a black phosphorus layer and a graphene lay...  
WO/2018/061435A1
This spin current magnetization reversal element is provided with: a ferromagnetic metal layer; and a spin orbital torque wiring extending in a first direction that intersects the lamination direction of the ferromagnetic metal layer, an...  
WO/2018/063255A1
A perpendicular spin transfer torque memory (pSTTM) device incorporates a magnetic tunnel junction (MTJ) device having a free magnetic stack and a fixed magnetic stack separated by a dielectric tunneling layer. The free magnetic stack in...  
WO/2018/063286A1
An apparatus is provided which comprises: a ferromagnetic (FM) region with magnetostrictive (MS) property; a piezo-electric (PZe) region adjacent to the FM region; and a magnetoelectric region adjacent to the FM region. An apparatus is p...  
WO/2018/063159A1
The present disclosure relates to the fabrication of spin transfer torque memory devices, wherein a magnetic tunnel junction of the spin transfer torque memory device is formed with Heusler alloys as the fixed and free magnetic layers an...  
WO/2018/061710A1
The purpose of the present invention is to provide a magnetoresistive effect element (10) having a larger magnetoresistive effect. A magnetoresistive effect element according to the present invention comprises a substrate (11), a first f...  
WO/2018/063338A1
Systems, apparatus, and methods for magnetoresitive memory are described. An apparatus for magnetoresitive memory includes a fixed layer, a free layer, and a tunneling barrier between the fixed layer and the free layer. The free layer is...  
WO/2018/063177A1
The present disclosure relates to the fabrication of spin transfer torque memory devices, wherein a spin transfer torque element is connected to a PMOS transistor. In one embodiment, the spin transfer torque element may have a fixed side...  
WO/2018/063357A1
Methods and apparatus for complex number generation and operation on a chip are disclosed. A disclosed logic device includes a first magnet with a first preferred direction of magnetization to polarize a spin of electrons in the first di...  
WO/2018/063355A1
A perpendicular spin transfer torque memory (pSTTM) device incorporates a magnetic tunnel junction (MTJ) device having a free magnetic stack that includes a plurality of magnetic layers interleaved with a plurality of non-magnetic insert...  
WO/2018/060785A1
A spin-transfer torque magnetic tunnel junction includes a layer stack with a pinned magnetic layer(11) and a free magnetic layer(13), and an insulating barrier layer(12) there-between. Each of the magnetic layers has an out-of-plane mag...  
WO/2018/053496A1
Discussed herein are methods of orienting one-dimensional and two-dimensional materials via the application of stationary and rotating magnetic fields. The oriented one-dimensional and two-dimensional materials may exhibit macroscopic pr...  
WO/2018/052062A1
Provided is a magnetoresistance effect device (1000) including: a first magnetoresistance effect element (101) including a first ferromagnetic layer (102), a second ferromagnetic layer (104), and a first spacer layer (103); a metal layer...  
WO/2018/047736A1
A magneto-resistive device 100 is characterized in comprising first magneto-resistive elements 101a, 101b, a second magneto-resistive element 101c, a first port 109a, a second port 109b, a signal line 107, and a direct current input term...  
WO/2018/044127A1
The present invention provides a neuromorphic device and a method for driving the same, the neuromorphic device comprising: a channel unit having a magnetization direction changing according to integration of multiple pieces of data; a f...  
WO/2018/042732A1
In order to provide a magnetic tunnel junction element having a higher TMR ratio and high heat resistance, and a method for manufacturing the magnetic tunnel junction element, at the time of constituting a magnetic tunnel junction elemen...  
WO/2018/043702A1
This magnetoresistive effect element comprises: a first ferromagnetic metal layer; a second ferromagnetic metal layer; and a tunnel barrier layer that is arranged between the first ferromagnetic metal layer and the second ferromagnetic m...  
WO/2018/043377A1
Provided is a method for producing a magnetic memory, by which a magnetic memory comprising a magnetic tunnel junction element that exhibits a high element performance is able to be easily produced. This method for producing a magnetic m...  
WO/2018/039349A1
Provided are a nonvolatile memory device and a method of fabricating the same. The nonvolatile memory device includes a semiconductor substrate, a first and a second diffusion regions formed under a surface of the semiconductor substrate...  
WO/2018/037634A1
Provided is a magnetic sensor 1 which is provided with a magnetoresistive effect element that is not susceptible to decrease in the sensitivity even if stored in a high temperature environment for a long period of time, specifically a ma...  
WO/2018/037777A1
This magnetoresistive element 10 is obtained by laminating a lower electrode 31, a first base layer 21A formed of a non-magnetic material, a storage layer 22 having perpendicular magnetic anisotropy, an intermediate layer 23, a magnetiza...  
WO/2018/030224A1
An exchange coupled film 10 of the present invention comprises an antiferromagnetic layer 2, a fixed magnetic layer 3, and a free magnetic layer 5 that are stacked. The antiferromagnetic layer 2 comprises a PtCr layer 2A and an XMn layer...  
WO/2018/029883A1
[Problem] To provide: an exchange-coupling film having a large magnetic field (Hex) in which the magnetic direction of a fixed magnetic layer inverts, and having high stability in high temperature conditions; and a magneto-resistive elem...  
WO/2018/026529A1
Aspects disclosed include reducing or avoiding metal deposition from etching magnetic tunnel junction (MTJ) devices. In one example, a width of a bottom electrode of an MTJ device is provided to be less than a width of the MTJ stack of t...  
WO/2018/022385A1
A memory cell including a magnetic Josephson junction (MJJ) device is provided. The MJJ device (300) includes a free magnetic layer (310), a non-magnetic layer (320), and a fixed magnetic layer (312). The free magnetic layer comprises a ...  
WO/2018/021706A1
A nano-oscillation element according to one embodiment of the present invention comprises: a first fixed magnetic layer; a second fixed magnetic layer arranged on the first fixed magnetic layer; a free magnetic layer interposed between t...  
WO/2018/020730A1
In order to provide a magnetic tunnel coupling element having a higher TMR ratio and making it possible to prevent damage to a record layer and a fixed layer during film formation, and a method for manufacturing the magnetic tunnel coupl...  
WO/2018/012272A1
This magnetic sensor is provided with a magnetoresistive element, a Hall element, and a detection circuit to which a signal from the magnetoresistive element and a signal from the Hall element are input. The detection circuit has an outp...  
WO/2018/010241A1
Disclosed in the present invention is a method for controlling spin wave transmission, the invention relating to the field of spintronics. In the present method, the internal exchange intensity of a magnetic waveguide material can be eff...  
WO/2018/008176A1
This current sensor is provided with: at least one permanent magnet (110); and at least one magnetosensitive body that detects, in a state wherein a bias magnetic field is being applied thereto from the permanent magnet (110), a magnetic...  
WO/2018/008525A1
A magnetic sensor (1) is provided with: a substrate (2) that has a main surface (21); a free layer (3) that has an magnetic easy-axis direction which is an in-plane direction parallel to the main surface; an intermediate layer (4) that i...  
WO/2018/006879A1
An anisotropic magnetic resistance and current sensor without a setting and resetting apparatus, comprising a substrate (170). An exchange bias layer (160) is deposited on the substrate (170); the exchange bias layer (160) is constituted...  
WO/2018/004608A1
Disclosed are magnetic tunnel junction (MTJ) devices, computing devices, and related methods. An MTJ device includes an MTJ body, an electrode, and a thermal resistor. The thermal resistor is operably coupled between the MTJ body and the...  
WO/2018/004612A1
Disclosed are magnetic tunnel junction (MTJ) devices, computing devices, and related methods. An MTJ device includes an MTJ body, an electrode, and a heating region. The heating region is disposed between the MTJ body and the electrode. ...  
WO/2018/004548A1
A three dimensional (3D) array of magnetic random access memory (MRAM) bit-cells is described, wherein the array includes a mesh of: a first interconnect extending along a first axis; a second interconnect extending along a second axis; ...  
WO/2018/004698A1
Material layer stack structures to provide a magnetic tunnel junction (MTJ) having improved perpendicular magnetic anisotropy (PMA) characteristics. In an embodiment, a free magnetic layer of the material layer stack is disposed between ...  
WO/2018/004648A1
Embodiments of the present disclosure describe apparatuses, methods, and systems associated with magnetoelectric cells. A magnetoelectric cell may include a magnetic tunnel junction that includes a fixed magnet layer and a free magnet la...  
WO/2018/003177A1
The objective of the present invention is to provide: an operation device which, when operated by an operator, can give the operator a favorable operation feeling by using a magnetorheological fluid; and a method for controlling said ope...  
WO/2018/004616A1
Disclosed are magnetic tunnel junction (MTJ) devices, computing devices, and related methods. An MTJ device includes an MTJ body, an electrode, and a crystal texture region. The crystal texture region is operably coupled between regions ...  
WO/2017/222521A1
An apparatus is provided which comprises: a magnetic junction having a free magnet layer which has perpendicular magnetic anisotropy (PMA), wherein the free magnet layer has anisotropy axis perpendicular to a plane of a device; and inter...  
WO/2017/222038A1
The purpose of the present invention is to provide a magnetoresistive element that has a high magnetic resistance (MR) ratio and a suitable device resistance (RA) for device applications. This magnetoresistive element has a structure in ...  
WO/2017/222723A1
High aspect ratio vertical interconnect access (via) interconnections in magnetic random access memory (MRAM) bit cells are disclosed.In one aspect, an exemplary MRAM bit cell includes a coupling column interconnecting an access transist...  
WO/2017/221896A1
The present invention improves the structure of a free magnetic layer of a tunnel magnetoresistance element, and achieves magnetoresistance characteristics having high linearity. A tunnel magnetoresistance element comprises a fixed magne...  
WO/2017/213261A1
This exchange bias utilization-type magnetization reversal element is provided with: antiferromagnetic driving layer antiferromagnetism (1) comprising first region (1a) and second region antiferromagnetism (1b), and third region antiferr...  
WO/2017/212752A1
A magnetic sensor (1) is provided with: a substrate (10); a plurality of magnetoresistive elements, which are provided on the substrate (10), and which constitute a bridge circuit; and a plurality of pole pieces (31, 32), which are provi...  
WO/2017/212895A1
[Problem] To provide a magnetic tunnel junction element and a magnetic memory that have having a higher MR ratio, and make it possible to prevent a recording layer from being damaged when a film is formed. [Solution] A reference layer 11...  
WO/2017/213003A1
The purpose of the present invention is to provide a magneto-impedance sensor which is capable of further improving measurement accuracy of an external magnetic field. The present invention is provided with: a magneto-impedance element (...  

Matches 1 - 50 out of 18,713