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Matches 1 - 50 out of 19,726

Document Document Title
WO/2019/155957A1
Provided are: a magnetoresistance effect element that can be used as an element constituting a neural network, etc.; and a circuit device and circuit unit in which the magnetoresistance effect element is used. A write current pulse Pw1 f...  
WO/2019/156736A1
Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction (MTJ) (900) for storing data may include a reference layer (906). A free layer (902) of an MTJ (900) may be separated f...  
WO/2019/150528A1
A method for writing data according to an aspect of the present invention pertains to applying a voltage, which is higher than or equal to a critical writing voltage and less than or equal to a given voltage at the ambient temperature, a...  
WO/2019/150885A1
Provided is a method for producing magnetoresistive elements wherein the removal of side wall oxides on a magnetic layer and the formation of a protective layer are simultaneously achieved, a deterioration in magnetic characteristics is ...  
WO/2019/148760A1
Disclosed is a topological insulator structure having an insulating protection layer, comprising: an insulating substrate, a topological insulator quantum well thin film, and an insulating protection layer. The topological insulator quan...  
WO/2019/151696A1
A magnetic memory according to one embodiment of the present invention comprises: a magnetic tunnel junction comprising a free layer, a reference layer, and a tunnel barrier layer disposed between the free layer and the reference layer; ...  
WO/2019/151644A1
The present invention relates to layered ZnSb, a ZnSb nanosheet, and preparation methods therefor. According to the present invention, a ZnSb nanosheet can be formed by efficiently releasing ZnSb, which is a polymorphic layered material ...  
WO/2019/150532A1
The method for writing data according to an aspect of the present invention pertains to loading an energy less than or equal to an energy E in a first direction of an energized part when the pulse width of an applied pulse is t in a spin...  
WO/2019/148761A1
Disclosed in the present application is a dual-channel topological insulator structure, comprising: an insulating substrate, a first topological insulator quantum well thin film, an insulating spacer layer, and a second topological insul...  
WO/2019/151643A1
The present invention relates to layered AZnBi (wherein A is any one of K, Na, and Li), layered ZnBi, a ZnBi nanosheet, and preparation methods therefor. The purpose of the present invention is to overcome the structure of a parent phase...  
WO/2019/148762A1
The present application provides a multi-channel topological insulator structure, comprising: an insulating substrate (10), a plurality of topological insulator quantum well thin films (20), and a plurality of insulating spacer layers (4...  
WO/2019/147924A1
A magnetic tunnel junction (MTJ) is disclosed wherein first and second interfaces of a free layer (FL) with a first metal oxide (Hk enhancing layer) and second metal oxide (tunnel barrier), respectively, produce perpendicular magnetic an...  
WO/2019/140729A1
A memristive device employing a ferromagnetic material has a multilayer film structure, and comprises a ferromagnetic layer, or comprises a magnetic tunnel junction (abbreviated as MTJ) consisting of a first ferromagnetic layer, a non-ma...  
WO/2019/142634A1
The present invention relates to a magnetic detection device (100) provided with a full-bridge circuit HB in which magnetic detection elements M1, R2 are provided on the same substrate SB, wherein the magnetic detection elements M1, R2 a...  
WO/2019/142635A1
The present invention relates to a magnetic detection device (100) provided with a full-bridge circuit HB in which magnetic detection elements M1, R2 are provided on the same substrate SB, wherein the magnetic detection elements M1, R2 a...  
WO/2019/143052A1
A memory device is disclosed. The memory device according to an embodiment of the present invention comprises a lower electrode, a seed layer, a lower synthetic exchange diamagnetic layer, a magnetic tunnel junction, an upper synthetic e...  
WO/2019/141677A1
A device (1) for guiding charge carriers and uses of the device are proposed, wherein the charge carriers are guided by means of a magnetic field (F) along a curved or angled main path (3) in a two- dimensional electron gas, in a thin su...  
WO/2019/139110A1
[Problem] To provide a magnetic sensor that makes it possible to improve the sensitivity of magnetic field detection as compared to when a flat gap is used. [Solution] Provided are a magnet layer 2 formed in a first layer Z1, magnet laye...  
WO/2019/139029A1
A domain wall motion type magnetic recording element (100) according to one embodiment of the present invention is provided with: a first ferromagnetic layer (10) which contains a ferromagnetic body; a non-magnetic layer (30) which faces...  
WO/2019/139575A1
An apparatus is provided which comprises: a magnet; a first structure comprising spin orbit material, wherein a portion of the structure is adjacent to the magnet; a second structure comprising piezo-electric material; and a conductor co...  
WO/2019/138778A1
Provided is an X-type 3-terminal type STT-MRAM (spin-orbit torque magnetization reversal element) that achieves both a high thermal stability index Δ and a low writing current IC characteristics. The magnetoresistance effect element has...  
WO/2019/138828A1
This semiconductor device is provided with: a first gate electrode comprising a first main wiring part which extends in a first active region of a semiconductor substrate in a first direction and divides the first active region into a fi...  
WO/2019/139612A1
A transistor, including an antiferroelectric (AFE) gate dielectric layer is described. The AFE gate dielectric layer may be crystalline and include oxygen and a dopant. The transistor further includes a gate electrode on the AFE gate die...  
WO/2019/139774A1
In one aspect, to fabricate MTJs in an MRAM array with reduced MTJ row pitch, a first patterning process is performed to provide separation areas in an MTJ layer between what will become rows of fabricated MTJs, which facilitates MTJs in...  
WO/2019/138535A1
This magnetic domain wall displacement type magnetic recording element comprises: a first ferromagnetic layer containing a ferromagnetic body; a magnetic recording layer extending in a first direction intersecting with the layering direc...  
WO/2019/139025A1
This spin orbital torque-type magnetization rotation element (10) is provided with: a spin orbital torque wiring (2) that extends in a first direction (x); a first ferromagnetic layer (1) that is laminated in a second direction (z) inter...  
WO/2019/136415A1
A Magnetic Tunnel Junction (MTJ) device can include an array of cells. The array of cells can include a plurality of source lines disposed in columns, set of selectors coupled to respective source lines, MJT structures coupled to respect...  
WO/2019/135744A1
A memory device comprises an interconnect having a spin orbit torque (SOT) material. A magnetic tunnel junction (MTJ) device comprises a free layer magnet coupled to the interconnect, a reference fixed magnet, and a barrier material betw...  
WO/2019/136409A1
Methods of fabricating devices including arrays of integrated Magnetic Tunnel Junctions (MTJs) and corresponding selectors in an array of cells. The array of cells can include a plurality of source lines disposed in columns, set of selec...  
WO/2019/135743A1
A memory device comprises an interconnect having a spin orbit torque (SOT) material. A magnetic tunnel junction (MTJ) device comprises a free layer magnet coupled to the interconnect, a reference fixed magnet, and a barrier material betw...  
WO/2019/133295A1
A memory device comprising an array of memory cells wherein each memory cell comprises a respective magnetic random access memory (MRAM) element, a respective gating transistor, and a common wordline coupled to gates of gating transistor...  
WO/2019/131394A1
According to the present invention, a tunnel magnetoresistive effect (TMR) element 11 that is able to properly operate in a high temperature environment, a high magnetic field environment and the like is provided with an exchange coupled...  
WO/2019/133479A1
A method for manufacturing a magnetic random access memory chip having magnetic memory elements with different performance characteristics formed on the same chip. The magnetic memory elements can be magnetic random access memory element...  
WO/2019/131812A1
The present invention addresses the problem of providing a magnetic sensor module in which the size of a magnetic sensor chip is suppressed, while a uniform calibration magnetic field is applied to a magneto-resistive element. Provided i...  
WO/2019/131392A1
A magnetic field application bias film 11 having high magnetic field resistance is provided with an exchange coupling film 10 having a permanent magnet layer 3 and an antiferromagnetic layer 4 layered upon the permanent magnet layer 3. T...  
WO/2019/133484A1
A method of forming a transistor, according to one embodiment, includes: forming an doped material, depositing an oxide layer on the doped material, depositing a conducting layer on the oxide layer, patterning the conducting layer to for...  
WO/2019/131391A1
A magnetic field application bias film 11 having high magnetic field resistance is provided with an exchange coupling film 10 having a ferromagnetic layer 3 and an antiferromagnetic layer 4 layered upon the ferromagnetic layer 3. The ant...  
WO/2019/131816A1
The present invention addresses the problem of providing a magnetic sensor module in which the impact on a magnetic sensor of heat generated from a coil is reduced. According to a conventional method, a plurality of temperature measuring...  
WO/2019/131393A1
Provided are: a position sensing element which is provided with an exchange coupled film that has a large exchange coupling magnetic field; and a position sensor which has good sensing accuracy in a high temperature environment. A positi...  
WO/2019/132862A1
An apparatus is provided which comprises: a first magnet with conductive properties; a first structure adjacent to the first magnet; a second magnet with semi-insulative or insulative properties, wherein the second magnet is adjacent to ...  
WO/2019/133868A1
An STT-MRAM device incorporating a multiplicity of MTJ junctions is encapsulated so that it dissipates heat produced by repeated read/write processes and is simultaneously shielded from external magnetic fields of neighboring devices. In...  
WO/2019/132994A1
In an embodiment, described herein are systems, methods, and apparatuses directed towards segmentation of a large cross-point memory a memory array (or tile) into two or more memory arrays (sub-tiles) of smaller size for use as an embedd...  
WO/2019/132995A1
Disclosed herein are systems, methods, and apparatuses that are directed to a selector for use in connection with memory devices. In an embodiment, the selector can comprise a device that has current-voltage characteristics that are symm...  
WO/2019/133117A1
A semiconductor device assembly is provided. The assembly comprises a package substrate, a first stack of semiconductor dies having a first set of planform dimensions disposed over a first location on the substrate, a second stack of sem...  
WO/2019/131142A1
Provided are a product-sum calculation device, a neuromorphic device, and a method for using a product-sum calculation device, which, when applied to a neural network, is able to reduce a risk that the performance of the neural network w...  
WO/2019/125368A1
An apparatus is provided which comprises: a magnetic junction; and an interconnect adjacent to the magnetic junction, wherein the interconnect comprises a super lattice of a neutral and charged perovskite.  
WO/2019/125363A1
An apparatus is provided which comprises: a magnetic junction including: a stack of structures including: a first structure comprising a magnet with a first magnetic anisotropy; a second structure comprising a magnet with a second magnet...  
WO/2019/124257A1
The purpose of the present invention is to make it possible to ensure a strength that allows thermoelectric evaluation to be performed even when sintering is carried out at a temperature lower than the minimum sintering temperature of a ...  
WO/2019/125366A1
An apparatus is provided which comprises: a magnetic junction (e.g., magnetic tunneling junction or spin valve); a structure adjacent to the magnetic junction, the structure comprising a magnet doped with a material (e.g., Ge, Ga, Si, F,...  
WO/2019/125365A1
An apparatus is provided which comprises: a magnetic junction having a magnet with a first magnetization; an interconnect adjacent to the magnetic junction, wherein the interconnect comprises a material exhibiting spin orbit coupling; an...  

Matches 1 - 50 out of 19,726