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Matches 1 - 50 out of 18,881

Document Document Title
WO/2018/131215A1
The present invention provides a method for manufacturing a magnetic tunnel junction element, in which characteristic degradation caused by hydrogen ions can be suppressed and to which an RIE process ensuring an etching shape is applied....  
WO/2018/125221A1
A material layer stack for a pSTTM device includes a fixed magnetic layer, a tunnel barrier disposed above the fixed magnetic layer and a free layer disposed on the tunnel barrier. The free layer further includes a stack of bilayers wher...  
WO/2018/125038A1
Circuits are described that use metallization on both sides techniques to integrate two different types of non-volatile embedded memory devices within a single monolithic integrated circuit device. In an embodiment, a monolithic integrat...  
WO/2018/125196A1
A spin transfer torque memory device may be fabricated with a magnetic tunnel junction within the spin transfer torque memory device having a fixed magnetic layer comprising at least one of Heusler alloy layer and a semiconducting Heusle...  
WO/2018/125062A1
Systems, apparatus, and methods for initializing spin qubits with no external magnetic fields are described. An apparatus for quantum computing includes a quantum well and a pair of contacts. At least one of the contacts is formed of a f...  
WO/2018/125106A1
A magnetic field sensor is provided which comprises: a magnetic field sensor comprising: a magnet (e.g., a ferromagnet or paramagnet); a first layer comprising an inverse spin orbit coupling material, wherein the first layer is adjacent ...  
WO/2018/125105A1
An apparatus is provided which comprises: a multiferroic layer having an ordered crystalline structure; and a crystallinity templating layer adjacent to the multiferroic layer, wherein the crystallinity templating layer comprises a mater...  
WO/2018/125204A1
A material layer stack for a pSTTM memory device includes a magnetic tunnel junction (MTJ) stack, a oxide layer, a protective layer and a capping layer. The MTJ includes a fixed magnetic layer, a tunnel barrier disposed above the fixed m...  
WO/2018/125042A1
An apparatus is provided which comprises: a first magnet with perpendicular magnetic anisotropy (PMA); a stack of layers, a portion of which is adjacent to the first magnet, wherein the stack of layers is to provide an inverse Rashba eff...  
WO/2018/125027A1
Aspects of the embodiments are directed to coupling a permanent magnet (PM) with a microelectromechanical systems (MEMS) device. In embodiments, an adhesive, such as an epoxy or resin or other adhesive material, can be used to move the P...  
WO/2018/125107A1
Described is an apparatus which comprises: a heat spreading layer; a first transition metal layer adjacent to the heat spreading layer; and a magnetic recording layer adjacent to the first transition metal layer, wherein the magnetic rec...  
WO/2018/125244A1
In various embodiments, disclosed herein are systems, methods, and apparatus directed to one or more thermally resistive layers that may be proximate to the bottom electrode or the top electrode in a perpendicular magnetic tunnel junctio...  
WO/2018/125210A1
A spin transfer torque memory devices may be fabricated having a magnetic tunnel junction with manganese-based Heusler alloys as a fixed magnetic layer and a free magnetic layer, and with a tunnel barrier layer between the fixed magnetic...  
WO/2018/125085A1
An apparatus comprises a magnetic tunnel junction (MTJ) including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier between the free and fixed layers, the tunnel barrier directly contacting a first side of the free laye...  
WO/2018/125243A1
In various embodiments, the systems, methods, and apparatus disclosed herein are directed to reducing the effects of damping, for example, Gilbert damping, in perpendicular magnetic tunnel junction (pMTJ) devices, while maintaining the t...  
WO/2018/125222A1
In one aspect, a mobile robot includes a chassis, a shell moveably mounted on the chassis by a shell suspension system, and a sensor assembly configured to sense a distance and a direction of shell movement relative to the chassis. The s...  
WO/2018/125248A1
Embodiments are generally directed to Heusler alloy based magnetic tunnel junctions and refractory interconnects. An embodiment of an apparatus includes a magnetic tunnel junction (MTJ) stack of an MRAM (Magnetoresistive Random Access Me...  
WO/2018/125142A1
Embodiments herein describe techniques for a semiconductor device, which includes a bottom electrode, and a MTJ pillar above the bottom electrode, where the MTJ pillar includes a MTJ stack having a free layer and a reference layer, and a...  
WO/2018/116743A1
This magnetoresistive element is provided with: a first element portion (11) including a first ferromagnetic area; a second element portion (12) including a second ferromagnetic area; and a plurality of electrode portions including at le...  
WO/2018/118091A1
Magneto-electric spin orbital (MESO) structures having functional oxide vias, and method of fabricating magneto-electric spin orbital (MESO) structures having functional oxide vias, are described. In an example, a magneto-electric spin o...  
WO/2018/117961A1
Various embodiments may provide a memory cell. The memory cell may include a magnetic tunneling junction memory including a first end and a second end. The memory cell may include a first transistor including a control electrode, a first...  
WO/2018/112889A1
Provided are a voltage control magnetic random storage unit, a memory and a logic device composed thereby. The storage unit comprises: a ferroelectric layer, a positive or negative first voltage being applied thereon, thereby controlling...  
WO/2018/118094A1
An apparatus is provided which comprises: a first paramagnet; a stack of layers, a portion of which is adjacent to the first paramagnet, wherein the stack of layers is to provide an inverse Rashba-Edelstein effect; a second paramagnet; a...  
WO/2018/116655A1
A magnetoresistance effect device 100 is characterized by being provided with first magnetoresistance effect elements 101a, 101b, a second magnetoresistance effect element 101c, a first port 109a, a second port 109b, a signal line 107, a...  
WO/2018/116656A1
A magnetoresistance effect device 100 is characterized by being provided with first magnetoresistance effect elements 101a, 101b, a second magnetoresistance effect element 101c, a first port 109a, a second port 109b, a signal line 107, a...  
WO/2018/116783A1
In the present invention, magnetosensitive parts (120a, 120b) include a plurality of unit magnetosensitive elements (124a, 124b) and a plurality of connection conductors (125a, 125b) that are each individually disposed between adjacent u...  
WO/2018/118084A1
Integrated circuits (ICs) including a device stratum with interconnect metallization over a first side of the stratum and a magnetic shield on a second side of the stratum. The device stratum may comprise transistors that are interconnec...  
WO/2018/111245A1
An apparatus is provided which comprises: a first magnet with perpendicular magnetic anisotropy (PMA); a stack of layers, a portion of which is adjacent to the first magnet, wherein the stack of layers is to provide an inverse Rashba-Byc...  
WO/2018/106212A1
An apparatus is provided which comprises: a first magnetic junction having a fixed magnetic layer and a 4-state free magnetic layer; a second magnetic junction having a fixed magnetic layer and a 4-state free magnetic layer; and a first ...  
WO/2018/104936A1
Technique for determining presence and/or concentration of a target gas by monitoring changes of Extraordinary Hall Effect (EHE) exhibited by an electrically conductive layer of a sensor element in presence of the target gas.  
WO/2018/106665A1
The present disclosure is directed to exemplary methods of manufacturing a magnetoresistive device. In one aspect, a method may include forming one or more regions (10, 20, 30...) of a magnetoresistive stack (100) on a substrate (90), wh...  
WO/2018/101437A1
A phase-variable multiplier of the present invention is provided with: a multiplier which multiplies a frequency fref of a reference signal by a factor of n; a magnetoresistive element which outputs a high-frequency wave having a pre-syn...  
WO/2018/101956A1
Self-aligned electrode nano-contacts for non-volatile random access memory (RAM) bit cells, and methods of fabricating electrode nano-contacts for non-volatile random access memory (RAM) bit cells, are described. In an example, semicondu...  
WO/2018/101028A1
This spin current magnetization reversal element comprises a first ferromagnetic metal layer having a variable direction of magnetization; and a spin-orbit torque wire that bonds to the first ferromagnetic metal layer and extends in a di...  
WO/2018/098813A1
A rotary position sensor (102) may include a sensor housing (202) defining an interior cavity. A first rotor (206) may be positioned and rotatable within the interior cavity, and includes a first magnet (326). Furthermore, the rotary pos...  
WO/2018/100837A1
This magnetization reversal element has a single-crystal substrate, a magnetization stabilization layer, a first ferromagnetic metal layer, and a bonding layer in said order, and at least the single-crystal substrate, the magnetization s...  
WO/2018/101665A1
The present invention relates to a method for manufacturing a semiconductor coating film by using magnetization, the method being capable of improving performance, over that of pre-magnetization, of a semiconductor by enhancing electron ...  
WO/2018/096992A1
The purpose of the present invention is to provide a physical vapor-deposition target member that has low deterioration of a foundation layer due to oxidation during formation of a physical vapor-deposition film, that produces few defect...  
WO/2018/092611A1
Provided is high-speed, large-scale, non-volatile skyrmion flash memory that has low power consumption, that does not result in erroneous writing, and that comprises a circuit having good detection sensitivity of stored data. In addition...  
WO/2018/092610A1
Provided is high-speed, large-scale, non-volatile skyrmion random accessory memory that prevents erroneous writing and erroneous erasing, that comprises a circuit having good detection sensitivity of stored data, that results in little l...  
WO/2018/091879A1
Apparatus for generating spin waves comprising a body (102) of magnetic material and an elastic wave generator (120), wherein the body (102) has a surface (108) and the elastic wave generator (120) is arranged to transmit elastic waves s...  
WO/2018/084774A1
A spin oscillator device (1) comprising a first spin Hall effect nano-oscillator, SHNO (2), having an extended multilayered magnetic thin-film stack (2), wherein a nano-constriction, NC, (6) is provided in said magnetic film stack (2) pr...  
WO/2018/084007A1
A magnetoresistive effect device 100 is characterized in having: an MR unit 20 having an input port 9a, an input-side signal line 7, magnetoresistive effect elements 1a, 1b, and a magnetic field generation signal line 18; and an output u...  
WO/2018/080159A1
Disclosed are a structure and an operating method for a spin synapse device using magnetic domain wall movement by means of spin orbit torque. Magnetization reversal of a free layer of the device is enabled by means of a current having a...  
WO/2018/078575A1
Equipment for horizontal directional drilling (HDD), comprising a drilling head (10) which in turn comprises a drill body (11), at least one rotating (20) and/or hammering (21) perforating member mounted on said drill body (11) and perfo...  
WO/2018/079931A1
A magnetoresistive memory module used as a main memory of a computing device is provided. A plurality of memory chips is mounted on a printed circuit board and a memory controller performs data scrubbing. Each memory chip comprises a plu...  
WO/2018/079404A1
A first magnetoresistive element (2a) and a second magnetoresistive element (2b) respectively have an easy axis of magnetization perpendicular to a surface (11), and are provided with: a fixed layer (21) for which the magnetization direc...  
WO/2018/074104A1
This magnetic element (101) comprises: a laminate (10A) formed by layering a plurality of insulating base-material layers made of the same resin material; a coil (3) formed in the laminate (10A); a magnetic body member (2) housed inside ...  
WO/2018/074724A1
The present invention relates to a semiconductor device. A semiconductor device (1000) based on a spin orbit torque (SOT) effect, according to an embodiment of the present invention, comprises: a first electrode; and a first cell and a s...  
WO/2018/071162A1
A process sequence is provided to provide an ultra-smooth (0.2 nm or less) bottom electrode surface for depositing magnetic tunnel junctions thereon. In one embodiment, the sequence includes forming a bottom electrode pad through bulk la...  

Matches 1 - 50 out of 18,881