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Matches 1 - 50 out of 19,920

Document Document Title
WO/2019/213663A1
Advanced magnetic tunneling junctions (MTJs) that dramatically reduce power consumption (switching energy, ESw) while maintaining a reasonably high tunneling magnetoresistance (on/off ratio, TMR) and strong thermal stability at room temp...  
WO/2019/202169A1
A method and system for generating voltage and/or current oscillations in a single magnetic layer is provided. The method comprises applying a direct voltage/current to the layer in a longitudinal direction; and developing a longitudinal...  
WO/2019/203912A1
A magnetoresistive device (100) includes first (20) and second (50) ferromagnetic regions and an intermediate region (30) formed of a dielectric material between the first and second ferromagnetic regions. A surface of the intermediate r...  
WO/2019/203132A1
Provided are a magnetoresistive element that enables the aspect ratio of a junction to be reduced, a magnetic memory device, and a reading and writing method for the magnetic memory device. A magnetoresistive element 1 is provided with: ...  
WO/2019/198069A1
The invention relates to a technique for inducing local electric field controlled magnetization, despite the absence of magnetic components. There is provided a novel heterostructure (100), a semiconductor device thereof, or an array of ...  
WO/2019/194450A1
The present invention relates to a film quality inspection method for providing a stress evaluation scheme for inspection of film quality of a magnetic tunnel junction (MTJ) element in a spin-transfer torque magnetic random access memory...  
WO/2019/193871A1
Provided is a precursor of a current-perpendicular-to-plane giant magnetoresistive element having a laminated structure of ferromagnetic metal layer/nonmagnetic metal layer/ferromagnetic metal layer, the precursor having a nonmagnetic in...  
WO/2019/190629A1
A magneto resistive device (100) may include a tunnel barrier region, a magnetically fixed region (20) positioned on one side of the tunnel barrier region (30), and a magnetically free region (50) positioned on an opposite side of the tu...  
WO/2019/187800A1
Provided are a magnetoresistive element which has magnetic shape anisotropy and uses a recording layer having antiparallel coupling, and a magnetic memory. Said magnetoresistive element has a structure in which: a first magnetic layer ...  
WO/2019/190652A1
Embodiments of the disclosure provide methods for forming MTJ structures from a film stack disposed on a substrate for MRAM applications and associated MTJ devices. The methods described herein include forming the film properties of mate...  
WO/2019/190552A1
An apparatus is provided which comprises: a magnet having a first portion and a second portion; a first structure, a portion of which is adjacent to the first portion of the magnet, wherein the first structure comprises a spin orbit mate...  
WO/2019/187674A1
Provided is a magnetoresistive element capable of achieving stable storage at higher temperatures even when the device size of the magnetoresistive element is small and demonstrating higher thermostability. This magnetoresistive element ...  
WO/2019/188450A1
An etching method, including: a step for readying a workpiece including a metal multilayer film which includes a magnetic tunnel junction, and a mask formed by a non-organic material on the metal multilayer film; and a step for etching t...  
WO/2019/188186A1
[Problem] To provide a magnetic sensor with which it is possible to detect a magnetic field by closed-loop control even when the magnetic field to be measured is faint. [Solution] The present invention is provided with: magnetic body lay...  
WO/2019/189895A1
Provided is a further optimized neural network circuit device. A synapse circuit 11 is formed of a pair of cross-coupled inverters 21, 22 and stores a synaptic coupling weight in a non-volatile manner. The inverter 21 is a series connect...  
WO/2019/188252A1
The present invention provides an integrated circuit device in which variable resistance memory elements are disposed in multiple layers upon taking operation efficiency into account. The integrated circuit device 1000 includes an MTJ el...  
WO/2019/188203A1
Provided are: a magnetic tunnel junction device that suppresses the diffusion or intrusion of a constituent element between a hard mask film, a magnetic tunnel junction film, and a protective layer; and a method for manufacturing a magne...  
WO/2019/182589A1
A memory device comprises a perpendicular magnetic tunnel junction (PMTJ) stack disposed above a substrate. The PMTJ stack has a first free layer magnet, a reference fixed magnet, and a barrier material between the first free layer magne...  
WO/2019/181408A1
This magnetic sensor 1 comprises: radial magnetoresistance elements (first magnetoresistance element 2 and second magnetoresistance element 3) comprising a plurality of magnetic sensing parts (first magnetic sensing parts 20 and second m...  
WO/2019/182591A1
Embedded non-volatile memory structures having selector elements with negative differential resistance (NDR) elements are described. In an example, a memory device includes a word line. A selector element is above the word line. The sele...  
WO/2019/177086A1
This MgO sintered body has an average crystal particle diameter that is greater than 10 µm but is no more than 100 µm, and has a surface with a center line average roughness Ra of 1.6 µm or less.  
WO/2019/133221A3
A process flow for forming magnetic tunnel junctions (MTJs) with minimal sidewall residue and reduced low tail population is disclosed wherein a pattern is first formed in a hard mask that is an uppermost MTJ layer. Thereafter, the hard ...  
WO/2019/177204A1
A magnetic nano oscillating device, according to an embodiment of the present invention, comprises: a ferromagnetic layer disposed on a substrate; a non-magnetic conductive layer laminated on the ferromagnetic layer; an antiferromagnetic...  
WO/2019/173421A1
The disclosed magnetoresistive device (100) includes vertically stacked annular-shaped magnetic tunnel junction (MTJ) bits. Each MTJ bit (50) includes an annular-shaped magnetically free region (80) and an annular-shaped magnetically fix...  
WO/2019/172928A1
A pSTTM device includes a first electrode and a second electrode, a free magnet between the first electrode and the second electrode, a fixed magnet between the first electrode and the second electrode, a tunnel barrier between the free ...  
WO/2019/171715A1
This spin element 100 comprises: an element part containing a first ferromagnetic layer 1; an energization part 5 contiguous the first ferromagnetic layer 1 and extending in a first direction (X direction) as seen from a stacking directi...  
WO/2019/171872A1
Provided is a semiconductor device of a structure which is suitable for high integration. This semiconductor device has: a transistor having a gate part, a first diffusion layer, and a second diffusion layer; a first conductive part; a s...  
WO/2019/172879A1
A stacked device structure includes a first device structure including a first body that includes a semiconductor material, and a plurality of terminals coupled with the first body. The stacked device structure further includes an insula...  
WO/2019/167575A1
This spin-orbit torque-type magnetization rotation element comprises a spin-orbit torque wire that extends in a first direction, and a first ferromagnetic layer that is layered on the spin-orbit torque wire. The spin-orbit torque wire co...  
WO/2019/166187A1
The non-reciprocal quantum device (10; 20; 30; 40; 50; 60; 70) comprises a first terminal (A) and a second terminal (B), a transmission structure connected between the first and second terminals and configured to transmit microscopic par...  
WO/2019/168537A1
An apparatus is provided which comprises: a magnet structure including a first magnet (e.g., ferromagnet/paramagnet), a second magnet (e.g., ferromagnet/paramagnet), and a coupling structure (e.g., Ru, Ir, Cu, Os, Hs, Fe, etc.) between t...  
WO/2019/167598A1
[Problem] To configure a magneto-sensitive element so as to cause a magnetic bias to be applied thereto from two directions. [Solution] The present invention is provided with: a magneto-sensitive element R2 in which the x-direction is th...  
WO/2019/167198A1
This stabilization method for spin elements applies a pulse current having a current density of 1.0 × 107–1.0×109 A/cm2 and a pulse width within a prescribed range, applying same if the ambient temperature is a prescribed temperature...  
WO/2019/167929A1
This ferromagnetic laminated film comprises a plurality of first magnetic layers, at least one second magnetic layer, and at least one first non-magnetic layer. The first magnetic layers are laminated alternately with the second magnetic...  
WO/2019/167197A1
This stabilization method for spin elements applies a current pulse of at least a prescribed current value at a prescribed temperature, in a spin element comprising a conductive section extending in a first direction and an element unit ...  
WO/2019/163203A1
This spin orbit torque type magnetization rotational element comprises a spin orbit torque wiring extending in a first direction, and a first ferromagnetic layer layered on the spin orbit torque wiring. The spin orbit torque wiring conta...  
WO/2019/163641A1
This method for forming a magnetic film comprises: (S12) formation of an amorphous magnetic film by means of sputtering of a target which is mainly composed of one substance that is selected from the group consisting of Mn3Sn, Mn3Ge and ...  
WO/2019/159885A1
This spin element is provided with: a conduction portion extending in a first direction; and an element portion stacked on one surface of the conduction portion, wherein the conduction portion has a first wire and a second wire from the ...  
WO/2019/159428A1
This spin orbit torque-type magnetization rotation element is provided with: a spin orbit torque line extending in a first direction; and a first ferromagnetic layer laminated on one surface of the spin orbit torque line, wherein: the sp...  
WO/2019/159962A1
Provided is a perpendicular magnetization type three-terminal SOT-MRAM which does not require an external magnetic field. A magnetoresistive effect element wherein: a first magnetic layer (3), a non-magnetic spacer layer (4) and a record...  
WO/2019/160080A1
According to the present invention, a magnetic material having a higher Curie temperature can be achieved. This magnetic material is made of Sr3-xAxOs1-yByO6 (-0.5≤x≤0.5, -0.5≤y≤0.5, A is an alkali metal or an alkali earth metal,...  
WO/2019/155957A1
Provided are: a magnetoresistance effect element that can be used as an element constituting a neural network, etc.; and a circuit device and circuit unit in which the magnetoresistance effect element is used. A write current pulse Pw1 f...  
WO/2019/156736A1
Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction (MTJ) (900) for storing data may include a reference layer (906). A free layer (902) of an MTJ (900) may be separated f...  
WO/2019/150528A1
A method for writing data according to an aspect of the present invention pertains to applying a voltage, which is higher than or equal to a critical writing voltage and less than or equal to a given voltage at the ambient temperature, a...  
WO/2019/150885A1
Provided is a method for producing magnetoresistive elements wherein the removal of side wall oxides on a magnetic layer and the formation of a protective layer are simultaneously achieved, a deterioration in magnetic characteristics is ...  
WO/2019/148760A1
Disclosed is a topological insulator structure having an insulating protection layer, comprising: an insulating substrate, a topological insulator quantum well thin film, and an insulating protection layer. The topological insulator quan...  
WO/2019/151696A1
A magnetic memory according to one embodiment of the present invention comprises: a magnetic tunnel junction comprising a free layer, a reference layer, and a tunnel barrier layer disposed between the free layer and the reference layer; ...  
WO/2019/151644A1
The present invention relates to layered ZnSb, a ZnSb nanosheet, and preparation methods therefor. According to the present invention, a ZnSb nanosheet can be formed by efficiently releasing ZnSb, which is a polymorphic layered material ...  
WO/2019/150532A1
The method for writing data according to an aspect of the present invention pertains to loading an energy less than or equal to an energy E in a first direction of an energized part when the pulse width of an applied pulse is t in a spin...  
WO/2019/148761A1
Disclosed in the present application is a dual-channel topological insulator structure, comprising: an insulating substrate, a first topological insulator quantum well thin film, an insulating spacer layer, and a second topological insul...  

Matches 1 - 50 out of 19,920