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Matches 1 - 50 out of 18,546

Document Document Title
WO/2018/012272A1
This magnetic sensor is provided with a magnetoresistive element, a Hall element, and a detection circuit to which a signal from the magnetoresistive element and a signal from the Hall element are input. The detection circuit has an outp...  
WO/2018/010241A1
Disclosed in the present invention is a method for controlling spin wave transmission, the invention relating to the field of spintronics. In the present method, the internal exchange intensity of a magnetic waveguide material can be eff...  
WO/2018/008176A1
This current sensor is provided with: at least one permanent magnet (110); and at least one magnetosensitive body that detects, in a state wherein a bias magnetic field is being applied thereto from the permanent magnet (110), a magnetic...  
WO/2018/008525A1
A magnetic sensor (1) is provided with: a substrate (2) that has a main surface (21); a free layer (3) that has an magnetic easy-axis direction which is an in-plane direction parallel to the main surface; an intermediate layer (4) that i...  
WO/2018/006879A1
An anisotropic magnetic resistance and current sensor without a setting and resetting apparatus, comprising a substrate (170). An exchange bias layer (160) is deposited on the substrate (170); the exchange bias layer (160) is constituted...  
WO/2018/004608A1
Disclosed are magnetic tunnel junction (MTJ) devices, computing devices, and related methods. An MTJ device includes an MTJ body, an electrode, and a thermal resistor. The thermal resistor is operably coupled between the MTJ body and the...  
WO/2018/004612A1
Disclosed are magnetic tunnel junction (MTJ) devices, computing devices, and related methods. An MTJ device includes an MTJ body, an electrode, and a heating region. The heating region is disposed between the MTJ body and the electrode. ...  
WO/2018/004548A1
A three dimensional (3D) array of magnetic random access memory (MRAM) bit-cells is described, wherein the array includes a mesh of: a first interconnect extending along a first axis; a second interconnect extending along a second axis; ...  
WO/2018/004698A1
Material layer stack structures to provide a magnetic tunnel junction (MTJ) having improved perpendicular magnetic anisotropy (PMA) characteristics. In an embodiment, a free magnetic layer of the material layer stack is disposed between ...  
WO/2018/004648A1
Embodiments of the present disclosure describe apparatuses, methods, and systems associated with magnetoelectric cells. A magnetoelectric cell may include a magnetic tunnel junction that includes a fixed magnet layer and a free magnet la...  
WO/2018/003177A1
The objective of the present invention is to provide: an operation device which, when operated by an operator, can give the operator a favorable operation feeling by using a magnetorheological fluid; and a method for controlling said ope...  
WO/2018/004616A1
Disclosed are magnetic tunnel junction (MTJ) devices, computing devices, and related methods. An MTJ device includes an MTJ body, an electrode, and a crystal texture region. The crystal texture region is operably coupled between regions ...  
WO/2017/222521A1
An apparatus is provided which comprises: a magnetic junction having a free magnet layer which has perpendicular magnetic anisotropy (PMA), wherein the free magnet layer has anisotropy axis perpendicular to a plane of a device; and inter...  
WO/2017/222038A1
The purpose of the present invention is to provide a magnetoresistive element that has a high magnetic resistance (MR) ratio and a suitable device resistance (RA) for device applications. This magnetoresistive element has a structure in ...  
WO/2017/222723A1
High aspect ratio vertical interconnect access (via) interconnections in magnetic random access memory (MRAM) bit cells are disclosed.In one aspect, an exemplary MRAM bit cell includes a coupling column interconnecting an access transist...  
WO/2017/221896A1
The present invention improves the structure of a free magnetic layer of a tunnel magnetoresistance element, and achieves magnetoresistance characteristics having high linearity. A tunnel magnetoresistance element comprises a fixed magne...  
WO/2017/213261A1
This exchange bias utilization-type magnetization reversal element is provided with: antiferromagnetic driving layer antiferromagnetism (1) comprising first region (1a) and second region antiferromagnetism (1b), and third region antiferr...  
WO/2017/212752A1
A magnetic sensor (1) is provided with: a substrate (10); a plurality of magnetoresistive elements, which are provided on the substrate (10), and which constitute a bridge circuit; and a plurality of pole pieces (31, 32), which are provi...  
WO/2017/212895A1
[Problem] To provide a magnetic tunnel junction element and a magnetic memory that have having a higher MR ratio, and make it possible to prevent a recording layer from being damaged when a film is formed. [Solution] A reference layer 11...  
WO/2017/213003A1
The purpose of the present invention is to provide a magneto-impedance sensor which is capable of further improving measurement accuracy of an external magnetic field. The present invention is provided with: a magneto-impedance element (...  
WO/2017/208880A1
A spin-current assist type magnetoresistance effect device (200) according to the invention of the present application is provided with: a spin-current assist type magnetoresistance effect element (100) including a magnetoresistance effe...  
WO/2017/208576A1
This magnetic memory element (100) is provided with: a conductive layer which contains a heavy metal layer (10) containing a 5d transition metal; a first ferromagnetic layer (20) which is adjacent to the conductive layer and contains a f...  
WO/2017/208653A1
This nonvolatile memory cell is provided with: a laminated structure 11 formed by laminating each other a storage layer 20, which stores information corresponding to the magnetization direction, and a magnetization fixing layer 30, which...  
WO/2017/209169A1
A magnetic sensor provided with: first magnetic resistance elements (120a, 120b); second magnetic resistance elements (130a, 130b); an insulation layer (30); and, among a first magnetic member (40) and a second magnetic member (50) locat...  
WO/2017/204151A1
[Problem] To improve the detecting accuracy of a magnetic sensor in which four magnetosensitive elements are bridge-connected. [Solution] This magnetic sensor is provided with magnetic layers 41 to 43 provided on a surface of a sensor bo...  
WO/2017/199787A1
This magnetic sensor is equipped with: a substrate (110), which has an upper surface (111), and which is provided with a trench section (112) having an inner surface connected to the upper surface (111); and a first magnetoresistive elem...  
WO/2017/199701A1
A sensor module 1 has: an electronic circuit 3 for performing pre-set processing; a substrate 2 on which the electronic circuit 3 is disposed; a pin header 5, one end part of which is folded and joined to a pad 4 provided to the substrat...  
WO/2017/196436A1
A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a n...  
WO/2017/183574A1
This domain wall-utilizing spin MOSFET (100) is provided with: a domain wall drive layer (1) comprising a domain wall (DW), a first region (1a), a second region (1b), and a third region (1c) positioned between the first region and the se...  
WO/2017/183354A1
A magnetic storage element includes a first magnetic layer having a magnetization easy axis in a direction perpendicular to a surface of the first magnetic layer. A first non-magnetic layer is on the first magnetic layer. A second magnet...  
WO/2017/183573A1
This domain wall-utilizing analog memory element (100) is provided with: a domain wall drive layer (1) comprising a domain wall (DW), a first region (1a), a second region (1b), and a third region (1c) positioned between the first region ...  
WO/2017/178704A1
The invention relates to a magnonic element and a method of redirecting spin waves (301, 302, 303). The element comprises a magnonic layer (35) capable of conveying spin waves (301, 302, 303). In addition, there is provided at least one ...  
WO/2017/176566A1
A method may include: providing a device stack, the device stack comprising sidewall portions and extending above a substrate base, the device stack further including a plurality of metal layers; depositing an interface layer conformally...  
WO/2017/176217A1
Various embodiments may provide a circuit arrangement. The circuit arrangement may include a first and a second memory element each having a first electrode and a second electrode, a first access transistor having a first controlled elec...  
WO/2017/172575A1
An electromagnetic coupler assembly includes a handle wafer having an oxide layer disposed on a first surface thereof. A layer of active semiconductor is disposed on the oxide layer and includes a voltage terminal to receive a supply vol...  
WO/2017/171848A1
Techniques are disclosed for carrying out ferromagnetic resonance (FMR) testing on whole wafers populated with one or more buried magnetic layers. The techniques can be used to verify or troubleshoot processes for forming the buried magn...  
WO/2017/171716A1
Approaches for an interconnect cladding process for integrating magnetic random access memory (MRAM) devices, and the resulting structures, are described. In an example, a memory structure includes an interconnect disposed in a trench of...  
WO/2017/169147A1
According to one embodiment of the present disclosure, a non-volatile memory element is provided with: a first electrode and a second electrode, which are disposed facing each other; a first magnetic material layer and a second magnetic ...  
WO/2017/169291A1
[Problem] To make it possible to further improve the magnetoresistance change rate without deteriorating reliability as an element. [Solution] Provided is a magnetoresistive element that is provided with: a storage layer wherein the magn...  
WO/2017/171730A1
Described is an apparatus which comprises: a heat spreading layer; a first transition metal layer adjacent to the heat spreading layer; and a magnetic recording layer adjacent to the first transition metal layer. Described is an apparatu...  
WO/2017/171840A1
Techniques are disclosed for forming a logic device including integrated spin-transfer torque magnetoresistive random-access memory (STT-MRAM). In accordance with some embodiments, one or more magnetic tunnel junction (MTJ) devices may b...  
WO/2017/171837A1
A monocrystalline metal-oxide stack including a ferroelectric (FE) tunneling layer and a buffer layer is epitaxially grown on a growth substrate. A first poly crystalline metal electrode layer is deposited over the tunneling layer. A bon...  
WO/2017/172209A1
Embodiments include apparatuses, systems, and methods including a memory apparatus including a plurality of bit cells, wherein each of the plurality of bit cells correspond to a respective weight value and include a switch device that ha...  
WO/2017/171718A1
Approaches and structures for unipolar current switching in perpendicular magnetic tunnel junction (pMTJ) devices through reduced bipolar coercivity are described. In an example, a memory array includes a plurality of bitlines and a plur...  
WO/2017/171795A1
Damascene-based approaches for fabricating a pedestal for a magnetic tunnel junction (MTJ) device, and the resulting structures, are described. In an example, a magnetic tunnel junction (MTJ) device includes a metal line disposed in a di...  
WO/2017/169540A1
[Problem] To improve the reliability of a memory element as an element. [Solution] Provided is a memory element configured by arraying, on a substrate, multiple magnetic resistance elements each having an MTJ structure wherein, in each o...  
WO/2017/169156A1
[Problem] To increase detection output linearity, reduce hysteresis, and increase detection sensitivity in an equilibrium-type magnetic field detection device that uses a feedback coil. [Solution] An equilibrium-type magnetic field detec...  
WO/2017/171747A1
Approaches for strain engineering of perpendicular magnetic tunnel junctions (pMTJs), and the resulting structures, are described. In an example, a memory structure includes a perpendicular magnetic tunnel junction (pMTJ) element dispose...  
WO/2017/171869A1
An apparatus including an array of memory cells arranged in a grid defined by word lines and bit lines in a generally orthogonal orientation relative to one another, a memory cell including a resistive memory component and an access tran...  
WO/2017/164229A1
[Problem] To provide a measurement method and measurement system for the thermal stability index of a magnetic tunnel junction device, a semiconductor integrated circuit, and a production management method for a semiconductor integrated ...  

Matches 1 - 50 out of 18,546