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Matches 1 - 50 out of 19,536

Document Document Title
WO/2019/092817A1
Provided is a TMR element, comprising a magnetic tunnel junction portion, a side wall portion provided on the side surface of the magnetic tunnel junction portion, a cap layer covering the top surface of the magnetic tunnel junction port...  
WO/2019/094545A1
The disclosed integrated circuit device (100) includes a memory portion (120) and a logic portion (110). The memory portion includes magnetoresistive devices (210), preferably magnetic tunnel junctions (250), and metal conductors (230, 2...  
WO/2019/092816A1
This TMR element comprises a magnetic tunnel joining section, a side wall section that covers a side surface of the magnetic tunnel joining section, and a fine particle region that is provided in the side wall section, wherein the side w...  
WO/2019/094228A1
A method of fabricating an integrated circuit device includes forming a trench (16) in a dielectric material (14) and forming a ferromagnetic circuit element (18) having an angled surface (22) on the trench. The angled surface of the cir...  
WO/2019/094577A1
A layered thin film device, such as a MTJ (Magnetic Tunnel Junction) device can be customized in shape by sequentially forming its successive layers over a symmetrically curved electrode. By initially shaping the electrode to have a conc...  
WO/2019/082323A1
This magnetic domain wall displacement-type magnetic recording element comprises: a first ferromagnetic layer containing a ferromagnetic body; a magnetic recording layer extending in a first direction orthogonal to the stacking direction...  
WO/2019/082716A1
In a method for etching according to one embodiment, a multilayer film having a magnetic tunnel junction layer is etched. In this method for etching, a plasma processing device is used. A chamber body of the plasma processing device prov...  
WO/2019/083811A1
A method for etching a magnetic tunneling junction (MTJ) structure is described. A stack of MTJ layers on a bottom electrode on a wafer is provided. A metal hard mask layer is provided on the MTJ stack. A stack of multiple dielectric har...  
WO/2019/077662A1
A TMR element that comprises: a base layer that is provided upon an upper surface of a via wiring part; a magnetic tunnel junction part that is provided upon the surface of the base layer; and an interlayer insulating layer that covers a...  
WO/2019/077661A1
A TMR element (1) that comprises: a magnetic tunnel junction element part (2); and a side wall part (17) that includes an insulating material and is provided to a side surface of the magnetic tunnel junction element part. The magnetic tu...  
WO/2019/079553A1
A magnetic tunnel junction (MTJ) that avoids electrical shorts and has improved data retention is disclosed. An uppermost capping layer has a first sidewall that is coplanar with an interface between outer oxidized portions and a center ...  
WO/2019/074944A1
A process flow for forming and encapsulating magnetic tunnel junction (MTJ) nanopillars is disclosed wherein MTJ layers including a reference layer (RL), free layer (FL), and tunnel barrier layer (TB) are first patterned by reactive ion ...  
WO/2019/075481A1
Disclosed herein are devices, systems, and methods that provide improved tunneling magnetoresistance (TMR) through the use of innovative device structures and heterostructure layers therein. Particularly, two or more magnetic layers form...  
WO/2019/073333A1
Provided is a novel storage device. The storage device has first wiring, second wiring, and first memory cells. The first memory cells each comprise a first transistor and a first magnetic tunnel junction element. One of a source and a d...  
WO/2019/074945A1
A magnetic tunnel junction (MTJ) is disclosed wherein a free layer (FL) interfaces with a metal oxide (Mox) layer and a tunnel barrier layer to produce interfacial perpendicular magnetic anisotropy (PMA). The Mox layer has a non-stoichio...  
WO/2019/040504A3
Magnetoresistive bit fabrication includes etching through a first portion of a magnetoresistive stack, including a first magnetic region, an intermediate region, and a second magnetic region, using a first etch process (320) to form one ...  
WO/2019/066881A1
Spin transfer torque memory (STTM) devices incorporating an Insulator-Metal-Transition (IMT) device or at least one layer of Insulator-Metal-Transition (IMT) material are disclosed. The Insulator-Metal-Transition (IMT) device or at least...  
WO/2019/066826A1
Embedded non-volatile memory structures having asymmetric selector elements are described. In an example, a memory device includes a word line. An asymmetric selector element is above the word line. The asymmetric selector element includ...  
WO/2019/065244A1
Provided is a method for producing a magnetic sensor, the method comprising: a soft-magnetic-layer-deposition step in which a soft magnetic layer 101 constituting a magnetic field sensing part 21 is deposited on a substrate 10 by magnetr...  
WO/2019/066820A1
An apparatus is provided which comprises: a first logic device including: a spin orbit coupling material, magnetostrictive material, and at least two transistors to operate using first a clock signal; a second logic device coupled to the...  
WO/2019/065690A1
According to the present invention, an exchange coupled film 10 that has a fixed magnetic layer for which a magnetic field (Hex) in which the magnetization direction thereof inverts is large, that is highly stable at high temperatures, a...  
WO/2019/066828A1
Embedded non-volatile memory structures having double selector elements are described. In an example, a memory device includes a word line. A double selector element is above the word line. The double selector element includes a first se...  
WO/2019/061826A1
An MTJ device and a manufacturing method therefor. The manufacturing method comprises: step S1, providing a preliminary dielectric film (02) on a substrate (1); step S2, forming through holes (24) in the preliminary dielectric film (02) ...  
WO/2019/064994A1
According to the present invention, an exchange coupled film 10 that has a fixed magnetic layer for which a magnetic field (Hex) in which the magnetization direction thereof inverts is large, that is highly stable at high temperatures, a...  
WO/2019/059951A1
An apparatus is provided which comprises: a magnetic junction; a first layer exhibiting spin orbit coupling properties, wherein the first layer is adjacent to the magnetic junction, wherein the first layer includes a first side and a sec...  
WO/2019/059894A1
Multi-channel vertical transistors for embedded non-volatile memory are described. In an example, a memory array includes a plurality of non-volatile random access memory (RAM) elements. The memory array also includes a plurality of tran...  
WO/2019/055003A1
Embedded non-volatile memory structures having selector elements with ballast are described. In an example, a memory device includes a word line. A selector element is above the word line. The selector element includes a selector materia...  
WO/2019/054484A1
A cell 2 of a magnetoresistive memory is provided with: a MTJ element 10 including a magnetization free layer 12; and a pure spin injection source 20. The pure spin injection source 20 includes a BiSb layer connected to the magnetization...  
WO/2019/055074A1
A spin orbit torque magnetoresistive random access memory (SOT MRAM) cell includes a magnetic tunnel junction that contains a free layer having two bi-stable magnetization directions, a reference magnetic layer having a fixed magnetizati...  
WO/2019/049591A1
This spin current magnetization reversal element (10) comprises a spin orbit torque wiring (2) extending in a first direction (X), and a first ferromagnetic layer (1) disposed in a second direction (Z) intersecting with the first directi...  
WO/2019/049244A1
This TMR element is provided with: a reference layer; a magnetization free layer; a tunnel barrier layer between the reference layer and the magnetization free layer; and a vertical magnetization inducing layer and a leak layer which are...  
WO/2019/049414A1
This magnetic sensor is provided with a magnetosensitive element section (11), a first magnet section (13), and a second magnet section (14). The direction of a bias magnetic field (1) is substantially orthogonal to the sensitivity axis ...  
WO/2019/049740A1
By utilizing, as a basic configuration, a combination between MgAl2O4 and an alloy containing Fe as the main component, the present invention provides a perpendicular magnetization film structure having high interface-induced magnetic an...  
WO/2019/045055A1
A spin orbit torque-type magnetization switching element according to the present embodiment is provided with: a ferromagnetic metal layer in which magnetization direction switching occurs; a spin orbit torque wire which extends in a fir...  
WO/2019/046197A1
The energy barrier of a magnetic tunnel junction (MTJ) affects its write performance as the amount of current required to switch the magnetic orientation of a free layer of the MTJ is a function of its energy barrier. Thus, by varying th...  
WO/2019/046064A1
Magnetoresistive bit fabrication includes etching through at least a portion of a thickness of a surface region including a hard mask to create a first set of exposed areas in the form of multiple parallel strips extending in a first dir...  
WO/2019/040504A2
A method of fabricating a magnetoresistive bit from a magnetoresistive stack includes etching through a first portion of the magnetoresistive stack usmg a first etch process to form one or more sidewalls. At least a portion of the side w...  
WO/2019/040408A1
A magnetic field sensor that includes a differential bridge in which each path of the bridge includes a first type of magnetic field sensing device and a second type of magnetic field sensing device. The first and second types of magneti...  
WO/2019/035294A1
Provided is an exchange coupled film 10 that: has a large magnetic field (Hex) that inverts the orientation of the magnetization of a fixed magnetic layer; is highly stable at high temperatures; has excellent strong-magnetic-field resist...  
WO/2019/035269A1
In the present invention, first magnetic resistance elements (120a, 120b) each include: a first pattern part that is located, as seen in a direction perpendicular to an insulation layer, inside a region (T) that is sandwiched between mag...  
WO/2019/031226A1
This spin current magnetoresistive effect element is provided with: a magnetoresistive effect element; a spin orbit torque wire which extends in a first direction intersecting a stacked direction of the magnetoresistive effect element, a...  
WO/2019/021078A1
The present disclose concerns an apparatus (5) for generating a magnetic field (60) comprising a plurality of permanent magnets (51, 52) arranged in a plane, each magnet (51, 52) being spatially separated along the plane from the adjacen...  
WO/2019/022732A1
Embedded non-volatile memory structures having bilayer selector elements are described. In an example, a memory device includes a wordline. A bilayer selector element is above the wordline. The bilayer selector element includes a ferroel...  
WO/2019/018051A1
Embodiments herein provide film stacks utilized to form a magnetic tunnel junction (MTJ) structure on a substrate, comprising: a buffer layer; a seed layer disposed over the buffer layer; a first pinning layer disposed over the seed laye...  
WO/2019/018069A1
A process flow for forming a magnetic tunnel junction (MTJ) cell (47) that is self-aligned to an underlying bottom electrode BE (35, 36) is disclosed. The BE is comprised of a lower BE layer (35) having a first width (wl), and an upper (...  
WO/2019/016728A1
A memory device includes a semiconductor device on a wafer. The semiconductor device includes a gate structure, a first source/drain region, and a second source/drain region. The gate structure is on the first side of the wafer. The firs...  
WO/2019/018191A1
Some embodiments are directed to an anisotropic magneto-resistive (AMR) angle sensor die that includes AMR angle sensors (130). Each AMR angle sensor (130) includes a first Wheatstone bridge (132) and a second Wheatstone bridge (150). An...  
WO/2019/017066A1
In order to provide an ultra-small high-sensitivity magnetic sensor that includes a magnetic field detection element formed integrally with an ASIC, the present invention is configured such that the thickness of a substrate film (10b) fo...  
WO/2019/014773A1
A plasmonic nanostructure material having semiconductor nanocrystals or metal-oxide nanocrystals configured with point defects to provide localized surface plasmon resonance as a parameter for tuning the electronic structure of the nanoc...  
WO/2019/014131A1
A magnetoresistive device comprises a fixed magnetic region positioned on or over a first electrically conductive region, an intermediate layer positioned on or over the fixed magnetic region, a free magnetic region positioned on or over...  

Matches 1 - 50 out of 19,536