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Matches 451 - 500 out of 6,078

Document Document Title
WO/2013/047733A1
This polishing composition is used for the purpose of polishing an object of polishing that has a phase change alloy. This polishing composition is characterized by containing an ionic additive. Examples of the ionic additive include a c...  
WO/2013/040859A1
Disclosed are a nano multilayer film of electrical field modulation type, a field effect tube of electrical field modulation type, an electrical field sensor of switch type, and a random accessory memory of electrical field drive type, f...  
WO/2013/038647A1
A non-volatile storage element (20) comprising: a first electrode (105); a second electrode (107); a variable resistance layer (106) interposed between the first electrode (105) and the second electrode (107), and configured by laminatin...  
WO/2013/037720A1
The present invention particularly relates to a method for producing a system including at least one memory device comprising a plurality of non-volatile memory cells (1), each of which includes a phase-change material (22) configured to...  
WO/2013/038641A1
This invention includes: a step (c) for forming a first electroconductive film (105') on a substrate; steps (d, e) for forming a first metal oxide layer (106x"), a second metal oxide layer (106y") having a different level of oxygen defic...  
WO/2013/037195A1
A large-capacity multi-value resistive random access memory, including an upper electrode (1) and a lower electrode (4). A combination of a plurality of resistive material layers (2) and a defect layer (3) is inserted between the upper e...  
WO/2013/035695A1
A Cu-Te-alloy-based sintered body sputtering target comprising 40 to 90 at% of Te and a remainder made up by unavoidable impurities and Cu, said sputtering target being characterized in that the largest diameter of a segregated part that...  
WO/2013/032855A2
Methods for producing RRAM resistive switching elements having reduced forming voltage include doping to create oxygen deficiencies in the dielectric film. Oxygen deficiencies in a dielectric film promote formation of conductive pathways.  
WO/2013/027682A1
Provided is a method for forming a Ge-Sb-Te film, which comprises an Sb starting material introduction step, a first purging step, a Te starting material introduction step, a second purging step, a Ge starting material introduction step ...  
WO/2013/021682A1
A variable resistance memory according to an embodiment includes: a first wiring; a second wiring provided above the first wiring and intersecting with the first wiring; a third wiring provided above the second wiring and intersecting wi...  
WO/2013/021674A1
A variable resistance memory according to an embodiment includes: a first wiring; a second wiring provided above the first wiring and intersecting with the first wiring; a third wiring provided above the second wiring and intersecting wi...  
WO/2013/018842A1
Provided are: a semiconductor device which is capable of reducing the processes or reducing the area of a variable resistance element as much as possible; and a method for manufacturing the semiconductor device. A semiconductor device, w...  
WO/2013/017131A3
The invention describes the production and the design of an integrated memory component, comprising at least one surface contact (C) and a mating contact (O) from which at least one rectifying contact is embodied, and a ferroelectric or ...  
WO/2013/007113A1
Disclosed are a transparent and flexible organic resistive random access memory and a method for manufacturing the same. The transparent and flexible organic resistive random access memory comprises a transparent and flexible substrate a...  
WO/2013/005040A1
This invention relates to memory resistors, arrays of memory resistors and a method of making memory resistors. In particular, this invention relates to memory resistors having an on state and an off state, comprising: (a) a first electr...  
WO/2013/003979A1
A method for integrating manganese-oxide-based resistive memory with copper interconnection rear end process is provided. The method comprising: patterning is performed to form a copper lead wire (503a) whose blocking layer is a manganes...  
WO/2013/003978A1
The present invention relates to semiconductor memory technical field, specially a containing ruthenium-doped tantalum oxide based resistive type memory. The resistive type memory comprises an upper electrode, a lower electrode, and a co...  
WO/2013/001742A1
Provided is a nonvolatile semiconductor storage element that is provided with: a bidirectional current control element, which can ensure a sufficient on-current even if the current control element is microminiaturized, and has a high on/...  
WO/2012/176452A1
Provided is a semiconductor recording device in which even when the ambient temperature has changed it is easy to guarantee a read-out margin. The device is provided with: a memory cell (901) which includes a first variable resistance el...  
WO/2012/172898A1
[Problem] To provide a strongly correlated oxide field effect element that exhibits a switching function with phase transition by electrical means. [Means for solution] Disclosed is a strongly correlated oxide field effect element (100) ...  
WO/2012/169198A1
A nonvolatile storage element (60) according to the present invention is provided with a current control element (50) having a bidirectional rectifying characteristic with respect to an applied voltage, and a resistance changing element ...  
WO/2012/169195A1
[Problem] To provide a variable resistance element wherein a forming process is unnecessary and it is possible to reduce the power consumption of the element and to miniaturize same. To also provide a method for producing said variable r...  
WO/2012/168981A1
For the purpose of providing a semiconductor storage device suited to miniaturization and having reduced contact resistance, the wiring structure of a memory array (MA) is as follows. Word lines (2) and bit lines (3) are extended in para...  
WO/2012/169194A1
[Problem] To provide a method and device for producing a variable resistance element whereby it is possible to precisely form a metal oxide layer exhibiting a desired resistivity. [Solution] This method for producing a variable resistanc...  
WO/2012/165018A1
According to one embodiment, a nonvolatile resistance change element includes a first electrode, a second electrode, a semiconductor layer and a first layer. The first electrode includes at least one of Ag, Ni, Co, Al, Zn, Ti, and Cu. Th...  
WO/2012/162867A1
Provided is a resistive random access memory using an electric field enhancement layer, comprising: a top electrode (201), a bottom electrode (203), and a stacked layer located between the top electrode (201) and the bottom electrode (20...  
WO/2012/158719A1
An improved method of fabricating a resistive memory device is disclosed, A resistive memory includes a bottom electode, atop electrode and a resistive material layer interposed therebetween, interfaces are formed between the resistive m...  
WO/2012/153818A1
A resistance-changing element which comprise a first electrode, a second electrode, and an ion-conducting layer disposed between the first electrode and the second electrode and which changes in resistance when metal ions supplied from t...  
WO/2012/151725A1
Provided are a semiconductor memory structure and a control method thereof, relating to the technical field of semiconductor non-volatile memories. The semiconductor memory structure includes a storage unit for storing information and a ...  
WO/2012/142735A1
Provided is a semiconductor memory structure and a method for manufacturing the same, relating to the technical field of micro-electronic devices. The semiconductor memory performs, for example, erase operation and read operation control...  
WO/2012/140971A1
Provided is a thin film with which changes in resistance due to charge- and orbital-ordering of perovskite-type manganese oxide are fully realized. An embodiment of the present invention provides a perovskite-type manganese oxide thin fi...  
WO/2012/140887A1
A method of manufacturing a variable-resistance type nonvolatile storage element of the present invention comprises: a process for forming a lower electrode layer (2) on a substrate (11); a process for forming a variable-resistance layer...  
WO/2012/141898A2
This disclosure provides embodiments for the formation of vertical memory cell structures (38) that may be implemented in RRAM devices. In one embodiment, memory cell area may be increased by varying word line (22) height (?WL) and/or wo...  
WO/2012/141898A3
This disclosure provides embodiments for the formation of vertical memory cell structures (38) that may be implemented in RRAM devices. In one embodiment, memory cell area may be increased by varying word line (22) height (?WL) and/or wo...  
WO/2012/136435A1
The present invention relates to an electronic device (100) comprising a first electrode (103), a second electrode (104), and a solid electrolyte (102) made of an ion-conducting material, said first and second electrodes (103, 104) being...  
WO/2012/127542A1
An organic molecular memory for controlling a current flowing through a memory cell and achieving stable operation and high degree of reliability is provided. The organic molecular memory includes a first electrode, a second electrode ma...  
WO/2012/126186A1
A resistance variable memory and a fabricating method thereof are provided. The memory includes a substrate(24), a plane upper electrode(21), a pinnacle-shape lower electrode(23) with the middle part protruding upward, and a resistance v...  
WO/2012/127735A1
This variable resistance element is formed by sandwiching between a pair electrodes a metal oxide layer the resistance of which is varied, and the metal oxide layer comprises a pair of variable resistance layers that bring about resistan...  
WO/2012/128134A1
A semiconductor memory device according to the embodiment comprises a memory cell array including a memory cell layer containing plural memory cells operative to store data in accordance with different resistance states; and an access ci...  
WO/2012/127861A1
The purpose of the present invention is to provide a method for manufacturing a variable resistance nonvolatile storage device, which has good consistency with a dual damascene process that is suitable for the formation of fine copper wi...  
WO/2012/128017A1
A method for writing to a resistive memory device having a plurality of resistive memory elements, in which a first process and a second process are performed in the stated order in a writing process in which a first variable resistor ch...  
WO/2012/127718A1
According to one embodiment, a resistance-change memory includes a memory cell and a control circuit. The memory cell comprises first and second electrodes, and a variable resistance layer disposed between the first electrode and the sec...  
WO/2012/126222A1
A method for preparing a metal oxide resistor memory is provided. The method comprises: forming a W plug lower electrode in the MOS device; forming a cap layer (201a), a first dielectric layer (101) and an etch-stop layer (201b) on the W...  
WO/2012/127863A1
An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecula...  
WO/2012/124314A1
Provided are a non-volatile storage element drive method and a non-volatile storage device that are capable of achieving a stable storage operation. The drive method is for a non-volatile storage element, said non-volatile storage elemen...  
WO/2012/120893A1
This method for producing a non-volatile recording device (10) contains: a step for forming a tantalum oxide material layer (106aF) configured from an oxygen-deficient transition metal oxide; a step for forming a tantalum oxide material ...  
WO/2012/117467A1
This reconfigurable circuit (10) is provided with: a switch element group wherein switch elements (1) wherein an on state and off state can be rewritten in accordance with resistance state are disposed; and a configuration controller (60...  
WO/2012/118791A1
In some aspects, a method of forming a reversible resistance-switch¬ ing metal-insulator-metal ("MIM") stack is provided, the method in¬ cluding: forming a first conducting layer (24) comprising a titani¬ um-rich titanium nitride (TiN...  
WO/2012/117773A1
This solid-state memory is provided with a recording layer the electrical properties of which change with the phase transition of matter. The recording layer is produced from a superlattice that is obtained by laminating a thin film form...  
WO/2012/114744A1
A non-volatile storage element manufacturing method comprises: a step of forming a first lower part electrode layer (108), an electric current control layer (109), and a first upper part electrode layer (110), and, upon the first upper p...  

Matches 451 - 500 out of 6,078