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Matches 501 - 550 out of 6,272

Document Document Title
WO/2013/093180A1
An apparatus comprising first and second layers of electrically conductive material (304, 307) separated by a layer of electrically insulating material (306), wherein one or both layers of electrically conductive material (304, 307) comp...  
WO/2013/086686A1
A preparation method of a high-speed low-power-consumption phase change memory comprises steps of: (1) washing a substrate; (2) successively depositing a metal film and an insulation layer film; (3) depositing a superlattice film phase c...  
WO/2013/080496A1
Memory cells (51) are formed at each intersection between X-axis bit lines (53a and 53b) and Y-axis word lines (52a) formed in a plurality of layers. In a multi-layer crosspoint structure in which there is a plurality of vertical array s...  
WO/2013/080452A1
This non-volatile storage element is equipped with: a first electrode (103); a second electrode (106); and a variable resistance layer (104) that comprises metal oxides and is formed between the first electrode (103) and the second elect...  
WO/2013/078791A1
Disclosed are a memory device, memory array and manufacturing method thereof, the memory device comprising: a lower electrode layer consisting of an n-type semi-conductor material, a resistance variable material layer on the lower electr...  
WO/2013/075416A1
A resistance random access memory unit comprises a unipolar RRAM (400) and an MOS transistor (300) connected in series thereto and acting as a selectron. The MOS transistor (300) is manufactured on a partially depleted SOI substrate, and...  
WO/2010/022036A3
A method for fabricating a memory device includes depositing a phase-change and/or a resistive change material. The memory device is formed photolithographically using sixteen or fewer masks.  
WO/2013/073187A1
A method for manufacturing a variable resistance nonvolatile storage device in which nonvolatile storage element layers are laminated by repeating a plurality of times steps (S100, S200, …) of forming a nonvolatile storage element laye...  
WO/2013/070307A1
A memory cell is proposed that includes a first electrode, a second electrode, and at least a first resistance-switching layer located be tween the first and second electrodes, wherein the resistance-switching layer comprises amorphous h...  
WO/2013/064021A1
Provided is a method for manufacturing a resistive random access storage unit, including the steps of: forming a resistive layer (20) on a first metal layer with a flat surface; forming a passivation layer (30) on the resistive layer (20...  
WO/2013/066496A1
In some aspects, a method of fabricating a memory cell is provided that includes fabricating a steering element (104) above a substrate, and fabricating a reversible- resistance switching element (102) cou- pled to the steering element b...  
WO/2013/060034A1
Provided in the present invention are a material based on silicon doped bismuth-tellurium for phase-changing storage devices and a preparation method therefor, wherein the material based on silicon doped bismuth-tellurium in the present ...  
WO/2013/061559A1
A nonvolatile storage cell comprises a first electrode (103), a second electrode (106) and a variable resistance layer (104). The variable resistance layer (104) includes: a first oxide layer (104a) composed of a metal oxide with nonstoi...  
WO/2013/057912A1
A non-volatile storage element, wherein when the voltage values of electric pulses have the relationship of V2>V1>0V>V3>V4 and the resistance values of a variable resistance layer have the relationship of R3>R2>R4>R1, the variable resist...  
WO/2013/058044A1
[Problem] To provide a strongly correlated non-volatile memory device which undergoes a phase transition caused by an electrical means and exhibits a non-volatile switching function. [Solution] An embodiment of the present invention prov...  
WO/2013/058853A1
A non-volatile memory cell includes a first electrode, a steering element, a metal oxide storage element located in series with the steering element, a dielectric resistor located in series with the steering element and the metal oxide s...  
WO/2013/057920A1
A non-volatile storage element is provided with a first wiring (102), a first plug (104) which is arranged on and electrically connected with the first wiring (102), an alteration prevention layer (105) which covers the entire region of ...  
WO/2013/017131A3
The invention describes the production and the design of an integrated memory component, comprising at least one surface contact (C) and a mating contact (O) from which at least one rectifying contact is embodied, and a ferroelectric or ...  
WO/2013/054506A1
The method includes: a step of forming a lower electrode (105) on top of a substrate (100); a step of forming a first resistance change layer (106a) constituted by a first metallic oxide on the lower electrode (105); a step of forming a ...  
WO/2013/054515A1
Disclosed is a non-volatile semiconductor storage device comprising a resistance change element wherein parasitic resistance between a lower electrode constituting a resistance change element and a resistance change layer is reduced. Thi...  
WO/2013/051267A1
A nonvolatile storage device is provided with a first electrode (103), a second electrode (106), and a variable-resistance layer (104). The variable-resistance layer (104) comprises: a first oxide layer (104a) comprising a first metallic...  
WO/2013/051066A1
To provide a memory cell array having a structure which may be implemented with a simpler process than before, and a structure which is more suited to high densities than before, a memory cell has a structure in which channel layers (88p...  
WO/2013/047734A1
This polishing composition is used for the purpose of polishing a polishing object that contains a phase change alloy, and is characterized by containing ammonium ions (NH4 +). This polishing composition may additionally contain abrasive...  
WO/2013/044612A1
A vertical selection transistor, a memory cell having the vertical selection transistor, a three-dimensional memory array structure and a method for fabricating the three-dimensional memory array structure are provided. The vertical sele...  
WO/2013/047733A1
This polishing composition is used for the purpose of polishing an object of polishing that has a phase change alloy. This polishing composition is characterized by containing an ionic additive. Examples of the ionic additive include a c...  
WO/2013/040859A1
Disclosed are a nano multilayer film of electrical field modulation type, a field effect tube of electrical field modulation type, an electrical field sensor of switch type, and a random accessory memory of electrical field drive type, f...  
WO/2013/038647A1
A non-volatile storage element (20) comprising: a first electrode (105); a second electrode (107); a variable resistance layer (106) interposed between the first electrode (105) and the second electrode (107), and configured by laminatin...  
WO/2013/037720A1
The present invention particularly relates to a method for producing a system including at least one memory device comprising a plurality of non-volatile memory cells (1), each of which includes a phase-change material (22) configured to...  
WO/2013/038641A1
This invention includes: a step (c) for forming a first electroconductive film (105') on a substrate; steps (d, e) for forming a first metal oxide layer (106x"), a second metal oxide layer (106y") having a different level of oxygen defic...  
WO/2013/037195A1
A large-capacity multi-value resistive random access memory, including an upper electrode (1) and a lower electrode (4). A combination of a plurality of resistive material layers (2) and a defect layer (3) is inserted between the upper e...  
WO/2013/035695A1
A Cu-Te-alloy-based sintered body sputtering target comprising 40 to 90 at% of Te and a remainder made up by unavoidable impurities and Cu, said sputtering target being characterized in that the largest diameter of a segregated part that...  
WO/2013/032855A2
Methods for producing RRAM resistive switching elements having reduced forming voltage include doping to create oxygen deficiencies in the dielectric film. Oxygen deficiencies in a dielectric film promote formation of conductive pathways.  
WO/2013/027682A1
Provided is a method for forming a Ge-Sb-Te film, which comprises an Sb starting material introduction step, a first purging step, a Te starting material introduction step, a second purging step, a Ge starting material introduction step ...  
WO/2013/021682A1
A variable resistance memory according to an embodiment includes: a first wiring; a second wiring provided above the first wiring and intersecting with the first wiring; a third wiring provided above the second wiring and intersecting wi...  
WO/2013/021674A1
A variable resistance memory according to an embodiment includes: a first wiring; a second wiring provided above the first wiring and intersecting with the first wiring; a third wiring provided above the second wiring and intersecting wi...  
WO/2013/018842A1
Provided are: a semiconductor device which is capable of reducing the processes or reducing the area of a variable resistance element as much as possible; and a method for manufacturing the semiconductor device. A semiconductor device, w...  
WO/2012/141898A3
This disclosure provides embodiments for the formation of vertical memory cell structures (38) that may be implemented in RRAM devices. In one embodiment, memory cell area may be increased by varying word line (22) height (?WL) and/or wo...  
WO/2013/007113A1
Disclosed are a transparent and flexible organic resistive random access memory and a method for manufacturing the same. The transparent and flexible organic resistive random access memory comprises a transparent and flexible substrate a...  
WO/2013/005040A1
This invention relates to memory resistors, arrays of memory resistors and a method of making memory resistors. In particular, this invention relates to memory resistors having an on state and an off state, comprising: (a) a first electr...  
WO/2013/003979A1
A method for integrating manganese-oxide-based resistive memory with copper interconnection rear end process is provided. The method comprising: patterning is performed to form a copper lead wire (503a) whose blocking layer is a manganes...  
WO/2013/003978A1
The present invention relates to semiconductor memory technical field, specially a containing ruthenium-doped tantalum oxide based resistive type memory. The resistive type memory comprises an upper electrode, a lower electrode, and a co...  
WO/2013/001742A1
Provided is a nonvolatile semiconductor storage element that is provided with: a bidirectional current control element, which can ensure a sufficient on-current even if the current control element is microminiaturized, and has a high on/...  
WO/2012/176452A1
Provided is a semiconductor recording device in which even when the ambient temperature has changed it is easy to guarantee a read-out margin. The device is provided with: a memory cell (901) which includes a first variable resistance el...  
WO/2012/172898A1
[Problem] To provide a strongly correlated oxide field effect element that exhibits a switching function with phase transition by electrical means. [Means for solution] Disclosed is a strongly correlated oxide field effect element (100) ...  
WO/2012/169198A1
A nonvolatile storage element (60) according to the present invention is provided with a current control element (50) having a bidirectional rectifying characteristic with respect to an applied voltage, and a resistance changing element ...  
WO/2012/169195A1
[Problem] To provide a variable resistance element wherein a forming process is unnecessary and it is possible to reduce the power consumption of the element and to miniaturize same. To also provide a method for producing said variable r...  
WO/2012/168981A1
For the purpose of providing a semiconductor storage device suited to miniaturization and having reduced contact resistance, the wiring structure of a memory array (MA) is as follows. Word lines (2) and bit lines (3) are extended in para...  
WO/2012/169194A1
[Problem] To provide a method and device for producing a variable resistance element whereby it is possible to precisely form a metal oxide layer exhibiting a desired resistivity. [Solution] This method for producing a variable resistanc...  
WO/2012/165018A1
According to one embodiment, a nonvolatile resistance change element includes a first electrode, a second electrode, a semiconductor layer and a first layer. The first electrode includes at least one of Ag, Ni, Co, Al, Zn, Ti, and Cu. Th...  
WO/2012/162867A1
Provided is a resistive random access memory using an electric field enhancement layer, comprising: a top electrode (201), a bottom electrode (203), and a stacked layer located between the top electrode (201) and the bottom electrode (20...  

Matches 501 - 550 out of 6,272