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Matches 551 - 600 out of 6,078

Document Document Title
WO/2012/034394A1
The present invention provides a resistance variable memory array with a three-dimensional structure and a manufacturing method thereof, which fall into the nonvolatile memory technology field of the super-large-scale integration manufac...  
WO/2012/035786A1
A current control element (100) that is formed so as to cover the bottom opening (105) of a via hole (104) formed in an interlayer insulating layer (102) includes: a corrosion inhibiting layer (106) formed at the bottom of the bottom ope...  
WO/2012/032730A1
The purpose of the present invention is to improve a rewriting transmission rate and reliability of a phase change memory. To attain the purpose, a plurality of phase change memory cells (SMC or USMC) which are provided in series between...  
WO/2012/026506A1
In a drive method that enables more stable switching operations, a memory element (10) is equipped with an insulating substrate (1) provided with a first electrode (2), a second electrode (3), and an electrode gap portion (4) for generat...  
WO/2012/026507A1
In order to carry out switching operations with greater stability this drive method for a memory element (10) is characterised by applying current pulses to the memory element, by means of a constant current circuit, when switching from ...  
WO/2012/023266A1
Provided is a nonvolatile memory device with which it is possible to lay bit lines and word lines of a memory cell array with minimum space therebetween, without disposing margins in designs of read circuits. Each of a plurality of base ...  
WO/2012/023269A1
Provided are a nonvolatile storage device, wherein variance of an initial breakdown voltage between nonvolatile storage elements is suppressed and deterioration of yield is eliminated, and a method for manufacturing the nonvolatile stora...  
WO/2012/019843A1
An example embodiment disclosed is a method for fabricating a phase change memory cell. The method includes forming a non-sublithographic via within an insulating substrate. The insulating substrate is embedded on the same layer as a fir...  
WO/2012/014447A1
In each of the steps of forming a first resistance change layer (18a) and of forming a second resistance change layer (18b), a cycle is executed once or a plurality of times, the cycle including: a first step of introducing a source gas ...  
WO/2012/008160A1
Provided is a nonvolatile storage device (10) which has a reduced initiation voltage and can have a low driving voltage. The nonvolatile storage device (10) comprises a semiconductor substrate (100), a first electrode layer (105) formed ...  
WO/2012/006869A1
Provided are a resistive memory and a manufacturing method thereof. The resistive memory comprises: a lower electrode formed in a pattern within a first medium layer (10); a second medium layer (12) formed on the lower electrode and the ...  
WO/2012/003821A1
The invention relates to a three-gate component which can be switched by the motion of ions. The three-gate component comprises a source electrode (3), a drain electrode (3), and a channel (2) which is connected between the source electr...  
WO/2012/005003A1
A nonvolatile semiconductor memory device comprises: a plurality of memory cell holes (101) formed at respective cross points between a plurality of stripe-shaped first interconnections (10) and a plurality of stripe-shaped second interc...  
WO/2012/001978A1
Disclosed is a method for manufacturing a variable resistance nonvolatile memory element wherein variation in the resistance can be suppressed. Specifically disclosed is a method for manufacturing a variable resistance nonvolatile memory...  
WO/2012/001944A1
Disclosed is a drive method for a non-volatile memory device, which includes: a step (S101) for detecting a surplus low resistance cell in a plurality of memory cells (11); a step (S103) for changing the resistance value of a load resist...  
WO/2012/001993A1
A variable resistance non-volatile storage element (10) is formed by layering a first electrode (101) formed from a material having a metal as the main component, a variable resistance layer (102) having a reversibly changeable resistanc...  
WO/2012/001599A2
A method for manufacturing a resistive memory element (1) comprises: providing a storage layer (2) comprising a resistance changeable material; said resistance changeable material comprising carbon; providing contact layers (3, 4) for co...  
WO/2012/001960A1
Disclosed is a nonvolatile memory cell array which is provided with: a laminated structure wherein interlayer insulating films (16) and laminated bodies (21), each of which is composed of a first conductive layer (13), a semiconductor la...  
WO/2012/001599A3
Disclosed is a method for manufacturing a resistive memory element (1) which comprises: providing a storage layer (2) comprising a resistance changeable material comprising carbon; providing contact layers (3, 4) for contacting the stora...  
WO/2011/161227A1
A planar phase change memory cell with parallel electrical paths. The memory cell includes a first conductive electrode region having a length greater than its width and an axis aligned with the length. The memory cell also includes a se...  
WO/2011/161936A1
Disclosed is a method for manufacturing a variable resistance element, which includes: processes (1000 to 1004) for forming conductive plugs in an interlayer insulation film on a substrate; a process (1005) for leveling the top surface o...  
WO/2011/157096A1
A resistive random access memory (RRAM) device and a manufacturing method thereof are provided. The RRAM device includes a memory unit which is disposed between a bit line and a word line. The memory unit includes a resistive element (40...  
WO/2011/159581A2
A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has first and second resistance-switching layers on ...  
WO/2011/159582A4
A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME). The RSME has first and second resistance-switching layers on either side of a conductive interm...  
WO/2011/159582A3
A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME). The RSME has first and second resistance-switching layers on either side of a conductive interm...  
WO/2011/159581A3
A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has first and second resistance-switching layers on ...  
WO/2011/159584A1
A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has a resistance-switching layer, a conductive inter...  
WO/2011/159583A2
A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has first and second resistance-switching layers on ...  
WO/2011/159583A4
A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has first and second resistance-switching layers on ...  
WO/2011/159582A2
A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME). The RSME has first and second resistance-switching layers on either side of a conductive interm...  
WO/2011/158691A1
Provided is a variable resistance element that makes it possible to reduce forming voltage while maintaining reliability. A variable resistance element as recited in one embodiment is equipped with a first electrode, a second electrode, ...  
WO/2011/158821A1
The present semiconductor device has multilayer wiring, first electrodes (5) and second electrodes (10a, 10b) provided between the multilayer wiring, and two resistance variable resistance elements (22a, 22b) containing variable resistan...  
WO/2011/159584A4
A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has a resistance-switching layer, a conductive inter...  
WO/2011/159583A3
A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has first and second resistance-switching layers on ...  
WO/2011/155210A1
Disclosed are: a non-volatile memory element in which the voltage of an electric pulse necessary for initial brake down can be reduced and the fluctuation in resistivity values can also be reduced; and a non-volatile memory device equipp...  
WO/2011/150750A1
A method for manufacturing memory cell including resistor is provided, which includes the following steps: a) forming a bottom electrode layer on an insulation substrate; b) forming a varistor material layer on the bottom electrode layer...  
WO/2011/152061A1
Provided is a multilayer cross-point variable-resistance nonvolatile storage device made up of memory cells that are formed in the same direction such that the characteristics in each layer become stable. The memory cells (51) are formed...  
WO/2011/150749A1
A resistive random access memory (RRAM) device, a manufacturing method thereof and an operation method thereof are provided. The RRAM includes a resistive memory element (120) and a Schottky diode (130). The resistive memory element (120...  
WO/2011/148944A1
Disclosed is a thin film magnetic device which comprises a magnetic layer, an alcohol etchable layer, and a factor barrier layer. The magnetic layer is provided on top of a substrate. The alcohol etchable layer is provided on the magneti...  
WO/2011/142386A1
Disclosed is a semiconductor device (10) which is embedded with a non-volatile element (100) in which a state immediately preceding the supply of power is maintained even when power is no longer supplied. The non-volatile element (100) i...  
WO/2011/135843A1
Disclosed is a method for manufacturing a variable resistance nonvolatile storage device, which includes: a step wherein a plurality of lower layer copper wiring lines (18), each of which has a stripe shape, are formed on a substrate (11...  
WO/2011/132423A1
Disclosed is a variable-resistance non-volatile storage device which varies resistance in a stable manner and is adapted for miniaturization. The non-volatile storage device comprises: a first wiring (101) formed by a barrier metal layer...  
WO/2011/130212A1
In a first aspect, a method of forming a metal-insulator-metal ("MIM") stack is provided, the method including: (1) forming a dielectric material having an opening and a first conductive carbon layer within the opening; (2) forming a spa...  
WO/2011/121970A1
Disclosed is a forming method for a variable resistance non-volatile memory element which provides lower forming voltage than conventional methods and whereby variation in forming voltage between individual variable resistance elements c...  
WO/2011/119175A1
Germanium antimony telluride materials are described, e.g., material of the formula GexSbyTezCmNn, wherein x is about 0.1-0.6, y is about 0-0.7, z is about 0.2-0.9, m is about 0.02-0.20, and n is about 0.2-0.20. One specific composition ...  
WO/2011/118513A1
According to one embodiment, a resistance change device includes a first electrode including a metal, a second electrode, and an amorphous oxide layer including Si and O between the first and second electrode, the layer having a concentr...  
WO/2011/118185A1
Disclosed is a method for driving a non-volatile memory element (100) in which a variable resistance element (10) and a current control element (20) are connected in series, wherein: the variable resistance element (10) is provided with ...  
WO/2011/115926A1
A MIM stack (200a) is provided that includes (1) a first conductive layer (108) comprising a first metal - silicide layer (108a) and a second metal - silicide layer (108b); (2) a resistivity- switching layer (104) comprising a metal oxid...  
WO/2011/114666A1
Provided is a current control element that is able to prevent the occurrence of a write disturb even when electrical pulses with different polarities are applied, and that is able to apply a large current to a variable resistance element...  
WO/2011/114173A1
According to the present invention there is provided a chalcogenide phase change material which can be converted between first and second states, wherein the material comprises a chiral species and wherein at least a portion of the mater...  

Matches 551 - 600 out of 6,078