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Matches 551 - 600 out of 6,163

Document Document Title
WO/2012/077174A1
When, in the present invention, a thin channel semiconductor layer formed on the side wall of a laminated film in which an insulating film and gate electrode are alternately laminated is removed on that laminated film, increases in conta...  
WO/2012/077517A1
[Problem] To increase the transition temperature of a perovskite manganese oxide thin film to above that of the bulk thereof. [Solution] An embodiment of the present invention provides a perovskite manganese oxide thin film (2) which is ...  
WO/2012/073471A1
The present invention provides a nonvolatile memory element comprising a variable resistance layer having a layered structure, wherein the variable resistance layer has a high resistance change ratio, and the present invention also provi...  
WO/2012/071892A1
A resistance conversion memory and a method for manufacturing the same are provided. The resistance conversion memory includes a lower electrode (1), a resistance conversion function layer(2) and an upper electrode(3) in turn from bottom...  
WO/2012/074131A1
A semiconductor device capable of being produced with few steps and a production method therefor are provided. The semiconductor device comprises: a variable resistance element; a first interlayer insulating film; a second interlayer ins...  
WO/2012/073503A1
A non-volatile storage element (10) according to the present invention is provided with: a first metal wire (103); a plug (107) which is formed on the first metal wire (103) and is connected to the first metal wire (103); a layered body ...  
WO/2012/070238A1
This nonvolatile memory element is provided with a resistance change layer (116) which is interposed between a bottom electrode (105) and an upper electrode (107) and in which the resistance value reversibly varies on the basis of electr...  
WO/2012/070096A1
An upright chain memory comprising: a two-level select transistor comprising first select transistors, which are upright transistors disposed in a matrix arrangement, and second select transistors, which are upright transistor formed res...  
WO/2012/070551A1
Provided are a device for manufacturing and a method for manufacturing a memory element having a metal oxide layer with etching resistance. Anisotropic etching is performed by the metal oxide layer (14) reacting with etching gas containi...  
WO/2012/070236A1
A non-volatile storage device in which the bit lines and word lines of a memory cell array can be wired at minimum intervals is provided. Basic array planes (0 to 3) of the non-volatile storage device comprise: first via groups (121 to 1...  
WO/2012/068127A3
A nonvolatile memory device with a first conductor extending in a first direction and a semiconductor element above the first conductor. The semiconductor element includes a source, a drain and a channel of a field effect transistor (JFE...  
WO/2012/066787A1
Provided is a nonvolatile storage element with which deterioration of the oxygen concentration profile of a variable resistance layer due to the thermal budget can be suppressed, and which is capable of stable operation at a low voltage;...  
WO/2012/066786A1
Provided are a method for manufacturing a variable resistance-type nonvolatile semiconductor storage element, and a nonvolatile semiconductor storage element that is capable of low-voltage high-speed operation during initial breakdown an...  
WO/2012/063495A1
The purpose of the present invention is to provide a process for manufacturing a resistance-variable non-volatile semiconductor storage element which has a reduced initial braking voltage, can be operated at a high velocity, and does not...  
WO/2012/061830A1
A method and apparatus for making analog and digital electronics which includes a composite including a squishable material doped with conductive particles. A microelectromechanical systems (MEMS) device has a channel made from the compo...  
WO/2012/056689A1
A nonvolatile memory device (800) comprises a resistance changing nonvolatile memory element (100), and a control circuit (810). The control circuit (810) determines whether or not the resistance value of the nonvolatile memory element (...  
WO/2012/049789A1
In the present invention, a select transistor (20) comprising an N-type MISFET has N-type source/drain regions (4) and (5) which are both provided on the upper part of a semiconductor substrate (1) with a space therebetween, a channel re...  
WO/2012/049865A1
According to one embodiment, a first electrode, a second electrode, and a variable resistance layer are provided. The variable resistance layer is arranged between the first electrode and the second electrode and contains a polycrystalli...  
WO/2012/048521A1
Disclosed are an NiO-based resistive random access memory and a method for manufacturing same. The memory unit comprises a substrate (100) and a Metal-Insulator-Metal (MIM) structure, wherein a top electrode (401) is a metal thin film ma...  
WO/2012/051041A1
A memory array is provided that includes a first memory cell (200-1) having a first conductive line (202a); a first bipolar storage element (102-1) formed above the first conductive line; and a second conductive line (302) formed above t...  
WO/2012/046454A1
Provided are a variable resistance nonvolatile storage element, which stably varies resistance with a low voltage, is suitable for a capacity increase, and has excellent reliability, and a method for manufacturing the variable resistance...  
WO/2012/043502A1
Provided is a semiconductor device comprising: a unit element having a first switch and a second switch that include a variable resistance layer having a resistance state that varies in accordance with the polarity of the applied voltage...  
WO/2012/042828A1
Provided is a memory element, wherein deterioration of and damages to a diode can be prevented even when miniaturizing the memory element. A memory element (100) of the present invention is provided with: a substrate (10); a plurality of...  
WO/2012/042897A1
This method for manufacturing a variable resistance non-volatile memory element comprises: a step for forming a first electrode (2) on a substrate (1); a step for forming a first metal oxide layer (31) having a prescribed oxygen content ...  
WO/2012/042866A1
A resistance change non-volatile memory element has a first electrode, a second electrode, and a transition metal-oxide film layer interposed between the first electrode and the second electrode. In the initial state of this resistance c...  
WO/2012/043154A1
Disclosed is a method for forming a Ge-Sb-Te film, wherein a substrate is disposed within a process chamber and a gaseous Ge material, a gaseous Sb material and a gaseous Te material are introduced into the process chamber, so that a Ge-...  
WO/2012/044473A1
A method of forming a memory cell is provided, the method including forming a diode including a first region having a first conductivity type, counter-doping the diode to change the first region to a second conductivity type, and forming...  
WO/2012/039284A1
The present invention addresses the problem of providing a three-terminal switch (electrochemical transistor) which implements a sharp on/off operation. A source electrode and a drain electrode are disposed side by side with an insulator...  
WO/2012/034394A1
The present invention provides a resistance variable memory array with a three-dimensional structure and a manufacturing method thereof, which fall into the nonvolatile memory technology field of the super-large-scale integration manufac...  
WO/2012/035786A1
A current control element (100) that is formed so as to cover the bottom opening (105) of a via hole (104) formed in an interlayer insulating layer (102) includes: a corrosion inhibiting layer (106) formed at the bottom of the bottom ope...  
WO/2012/032730A1
The purpose of the present invention is to improve a rewriting transmission rate and reliability of a phase change memory. To attain the purpose, a plurality of phase change memory cells (SMC or USMC) which are provided in series between...  
WO/2012/026506A1
In a drive method that enables more stable switching operations, a memory element (10) is equipped with an insulating substrate (1) provided with a first electrode (2), a second electrode (3), and an electrode gap portion (4) for generat...  
WO/2012/026507A1
In order to carry out switching operations with greater stability this drive method for a memory element (10) is characterised by applying current pulses to the memory element, by means of a constant current circuit, when switching from ...  
WO/2012/023266A1
Provided is a nonvolatile memory device with which it is possible to lay bit lines and word lines of a memory cell array with minimum space therebetween, without disposing margins in designs of read circuits. Each of a plurality of base ...  
WO/2012/023269A1
Provided are a nonvolatile storage device, wherein variance of an initial breakdown voltage between nonvolatile storage elements is suppressed and deterioration of yield is eliminated, and a method for manufacturing the nonvolatile stora...  
WO/2012/019843A1
An example embodiment disclosed is a method for fabricating a phase change memory cell. The method includes forming a non-sublithographic via within an insulating substrate. The insulating substrate is embedded on the same layer as a fir...  
WO/2012/014447A1
In each of the steps of forming a first resistance change layer (18a) and of forming a second resistance change layer (18b), a cycle is executed once or a plurality of times, the cycle including: a first step of introducing a source gas ...  
WO/2012/008160A1
Provided is a nonvolatile storage device (10) which has a reduced initiation voltage and can have a low driving voltage. The nonvolatile storage device (10) comprises a semiconductor substrate (100), a first electrode layer (105) formed ...  
WO/2012/006869A1
Provided are a resistive memory and a manufacturing method thereof. The resistive memory comprises: a lower electrode formed in a pattern within a first medium layer (10); a second medium layer (12) formed on the lower electrode and the ...  
WO/2012/003821A1
The invention relates to a three-gate component which can be switched by the motion of ions. The three-gate component comprises a source electrode (3), a drain electrode (3), and a channel (2) which is connected between the source electr...  
WO/2012/005003A1
A nonvolatile semiconductor memory device comprises: a plurality of memory cell holes (101) formed at respective cross points between a plurality of stripe-shaped first interconnections (10) and a plurality of stripe-shaped second interc...  
WO/2012/001978A1
Disclosed is a method for manufacturing a variable resistance nonvolatile memory element wherein variation in the resistance can be suppressed. Specifically disclosed is a method for manufacturing a variable resistance nonvolatile memory...  
WO/2012/001944A1
Disclosed is a drive method for a non-volatile memory device, which includes: a step (S101) for detecting a surplus low resistance cell in a plurality of memory cells (11); a step (S103) for changing the resistance value of a load resist...  
WO/2012/001993A1
A variable resistance non-volatile storage element (10) is formed by layering a first electrode (101) formed from a material having a metal as the main component, a variable resistance layer (102) having a reversibly changeable resistanc...  
WO/2012/001599A2
A method for manufacturing a resistive memory element (1) comprises: providing a storage layer (2) comprising a resistance changeable material; said resistance changeable material comprising carbon; providing contact layers (3, 4) for co...  
WO/2012/001960A1
Disclosed is a nonvolatile memory cell array which is provided with: a laminated structure wherein interlayer insulating films (16) and laminated bodies (21), each of which is composed of a first conductive layer (13), a semiconductor la...  
WO/2012/001599A3
Disclosed is a method for manufacturing a resistive memory element (1) which comprises: providing a storage layer (2) comprising a resistance changeable material comprising carbon; providing contact layers (3, 4) for contacting the stora...  
WO/2011/161227A1
A planar phase change memory cell with parallel electrical paths. The memory cell includes a first conductive electrode region having a length greater than its width and an axis aligned with the length. The memory cell also includes a se...  
WO/2011/161936A1
Disclosed is a method for manufacturing a variable resistance element, which includes: processes (1000 to 1004) for forming conductive plugs in an interlayer insulation film on a substrate; a process (1005) for leveling the top surface o...  
WO/2011/157096A1
A resistive random access memory (RRAM) device and a manufacturing method thereof are provided. The RRAM device includes a memory unit which is disposed between a bit line and a word line. The memory unit includes a resistive element (40...  

Matches 551 - 600 out of 6,163