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Matches 601 - 650 out of 6,246

Document Document Title
WO/2012/070096A1
An upright chain memory comprising: a two-level select transistor comprising first select transistors, which are upright transistors disposed in a matrix arrangement, and second select transistors, which are upright transistor formed res...  
WO/2012/070551A1
Provided are a device for manufacturing and a method for manufacturing a memory element having a metal oxide layer with etching resistance. Anisotropic etching is performed by the metal oxide layer (14) reacting with etching gas containi...  
WO/2012/070236A1
A non-volatile storage device in which the bit lines and word lines of a memory cell array can be wired at minimum intervals is provided. Basic array planes (0 to 3) of the non-volatile storage device comprise: first via groups (121 to 1...  
WO/2012/066787A1
Provided is a nonvolatile storage element with which deterioration of the oxygen concentration profile of a variable resistance layer due to the thermal budget can be suppressed, and which is capable of stable operation at a low voltage;...  
WO/2012/066786A1
Provided are a method for manufacturing a variable resistance-type nonvolatile semiconductor storage element, and a nonvolatile semiconductor storage element that is capable of low-voltage high-speed operation during initial breakdown an...  
WO/2012/063495A1
The purpose of the present invention is to provide a process for manufacturing a resistance-variable non-volatile semiconductor storage element which has a reduced initial braking voltage, can be operated at a high velocity, and does not...  
WO/2012/061830A1
A method and apparatus for making analog and digital electronics which includes a composite including a squishable material doped with conductive particles. A microelectromechanical systems (MEMS) device has a channel made from the compo...  
WO/2012/056689A1
A nonvolatile memory device (800) comprises a resistance changing nonvolatile memory element (100), and a control circuit (810). The control circuit (810) determines whether or not the resistance value of the nonvolatile memory element (...  
WO/2011/159581A3
A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has first and second resistance-switching layers on ...  
WO/2012/049789A1
In the present invention, a select transistor (20) comprising an N-type MISFET has N-type source/drain regions (4) and (5) which are both provided on the upper part of a semiconductor substrate (1) with a space therebetween, a channel re...  
WO/2012/049865A1
According to one embodiment, a first electrode, a second electrode, and a variable resistance layer are provided. The variable resistance layer is arranged between the first electrode and the second electrode and contains a polycrystalli...  
WO/2012/048521A1
Disclosed are an NiO-based resistive random access memory and a method for manufacturing same. The memory unit comprises a substrate (100) and a Metal-Insulator-Metal (MIM) structure, wherein a top electrode (401) is a metal thin film ma...  
WO/2012/051041A1
A memory array is provided that includes a first memory cell (200-1) having a first conductive line (202a); a first bipolar storage element (102-1) formed above the first conductive line; and a second conductive line (302) formed above t...  
WO/2012/046454A1
Provided are a variable resistance nonvolatile storage element, which stably varies resistance with a low voltage, is suitable for a capacity increase, and has excellent reliability, and a method for manufacturing the variable resistance...  
WO/2012/043502A1
Provided is a semiconductor device comprising: a unit element having a first switch and a second switch that include a variable resistance layer having a resistance state that varies in accordance with the polarity of the applied voltage...  
WO/2012/042828A1
Provided is a memory element, wherein deterioration of and damages to a diode can be prevented even when miniaturizing the memory element. A memory element (100) of the present invention is provided with: a substrate (10); a plurality of...  
WO/2012/042897A1
This method for manufacturing a variable resistance non-volatile memory element comprises: a step for forming a first electrode (2) on a substrate (1); a step for forming a first metal oxide layer (31) having a prescribed oxygen content ...  
WO/2012/042866A1
A resistance change non-volatile memory element has a first electrode, a second electrode, and a transition metal-oxide film layer interposed between the first electrode and the second electrode. In the initial state of this resistance c...  
WO/2012/043154A1
Disclosed is a method for forming a Ge-Sb-Te film, wherein a substrate is disposed within a process chamber and a gaseous Ge material, a gaseous Sb material and a gaseous Te material are introduced into the process chamber, so that a Ge-...  
WO/2012/044473A1
A method of forming a memory cell is provided, the method including forming a diode including a first region having a first conductivity type, counter-doping the diode to change the first region to a second conductivity type, and forming...  
WO/2012/039284A1
The present invention addresses the problem of providing a three-terminal switch (electrochemical transistor) which implements a sharp on/off operation. A source electrode and a drain electrode are disposed side by side with an insulator...  
WO/2012/034394A1
The present invention provides a resistance variable memory array with a three-dimensional structure and a manufacturing method thereof, which fall into the nonvolatile memory technology field of the super-large-scale integration manufac...  
WO/2012/035786A1
A current control element (100) that is formed so as to cover the bottom opening (105) of a via hole (104) formed in an interlayer insulating layer (102) includes: a corrosion inhibiting layer (106) formed at the bottom of the bottom ope...  
WO/2012/001599A3
Disclosed is a method for manufacturing a resistive memory element (1) which comprises: providing a storage layer (2) comprising a resistance changeable material comprising carbon; providing contact layers (3, 4) for contacting the stora...  
WO/2011/159584A4
A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has a resistance-switching layer, a conductive inter...  
WO/2012/032730A1
The purpose of the present invention is to improve a rewriting transmission rate and reliability of a phase change memory. To attain the purpose, a plurality of phase change memory cells (SMC or USMC) which are provided in series between...  
WO/2012/026506A1
In a drive method that enables more stable switching operations, a memory element (10) is equipped with an insulating substrate (1) provided with a first electrode (2), a second electrode (3), and an electrode gap portion (4) for generat...  
WO/2012/026507A1
In order to carry out switching operations with greater stability this drive method for a memory element (10) is characterised by applying current pulses to the memory element, by means of a constant current circuit, when switching from ...  
WO/2012/023266A1
Provided is a nonvolatile memory device with which it is possible to lay bit lines and word lines of a memory cell array with minimum space therebetween, without disposing margins in designs of read circuits. Each of a plurality of base ...  
WO/2012/023269A1
Provided are a nonvolatile storage device, wherein variance of an initial breakdown voltage between nonvolatile storage elements is suppressed and deterioration of yield is eliminated, and a method for manufacturing the nonvolatile stora...  
WO/2012/019843A1
An example embodiment disclosed is a method for fabricating a phase change memory cell. The method includes forming a non-sublithographic via within an insulating substrate. The insulating substrate is embedded on the same layer as a fir...  
WO/2012/014447A1
In each of the steps of forming a first resistance change layer (18a) and of forming a second resistance change layer (18b), a cycle is executed once or a plurality of times, the cycle including: a first step of introducing a source gas ...  
WO/2012/008160A1
Provided is a nonvolatile storage device (10) which has a reduced initiation voltage and can have a low driving voltage. The nonvolatile storage device (10) comprises a semiconductor substrate (100), a first electrode layer (105) formed ...  
WO/2012/006869A1
Provided are a resistive memory and a manufacturing method thereof. The resistive memory comprises: a lower electrode formed in a pattern within a first medium layer (10); a second medium layer (12) formed on the lower electrode and the ...  
WO/2012/003821A1
The invention relates to a three-gate component which can be switched by the motion of ions. The three-gate component comprises a source electrode (3), a drain electrode (3), and a channel (2) which is connected between the source electr...  
WO/2012/005003A1
A nonvolatile semiconductor memory device comprises: a plurality of memory cell holes (101) formed at respective cross points between a plurality of stripe-shaped first interconnections (10) and a plurality of stripe-shaped second interc...  
WO/2012/001978A1
Disclosed is a method for manufacturing a variable resistance nonvolatile memory element wherein variation in the resistance can be suppressed. Specifically disclosed is a method for manufacturing a variable resistance nonvolatile memory...  
WO/2012/001944A1
Disclosed is a drive method for a non-volatile memory device, which includes: a step (S101) for detecting a surplus low resistance cell in a plurality of memory cells (11); a step (S103) for changing the resistance value of a load resist...  
WO/2012/001993A1
A variable resistance non-volatile storage element (10) is formed by layering a first electrode (101) formed from a material having a metal as the main component, a variable resistance layer (102) having a reversibly changeable resistanc...  
WO/2012/001599A2
A method for manufacturing a resistive memory element (1) comprises: providing a storage layer (2) comprising a resistance changeable material; said resistance changeable material comprising carbon; providing contact layers (3, 4) for co...  
WO/2012/001960A1
Disclosed is a nonvolatile memory cell array which is provided with: a laminated structure wherein interlayer insulating films (16) and laminated bodies (21), each of which is composed of a first conductive layer (13), a semiconductor la...  
WO/2011/161227A1
A planar phase change memory cell with parallel electrical paths. The memory cell includes a first conductive electrode region having a length greater than its width and an axis aligned with the length. The memory cell also includes a se...  
WO/2011/161936A1
Disclosed is a method for manufacturing a variable resistance element, which includes: processes (1000 to 1004) for forming conductive plugs in an interlayer insulation film on a substrate; a process (1005) for leveling the top surface o...  
WO/2011/157096A1
A resistive random access memory (RRAM) device and a manufacturing method thereof are provided. The RRAM device includes a memory unit which is disposed between a bit line and a word line. The memory unit includes a resistive element (40...  
WO/2011/159581A2
A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has first and second resistance-switching layers on ...  
WO/2011/159584A1
A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has a resistance-switching layer, a conductive inter...  
WO/2011/159583A2
A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has first and second resistance-switching layers on ...  
WO/2011/159582A2
A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME). The RSME has first and second resistance-switching layers on either side of a conductive interm...  
WO/2011/158691A1
Provided is a variable resistance element that makes it possible to reduce forming voltage while maintaining reliability. A variable resistance element as recited in one embodiment is equipped with a first electrode, a second electrode, ...  
WO/2011/158821A1
The present semiconductor device has multilayer wiring, first electrodes (5) and second electrodes (10a, 10b) provided between the multilayer wiring, and two resistance variable resistance elements (22a, 22b) containing variable resistan...  

Matches 601 - 650 out of 6,246