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Matches 651 - 700 out of 6,078

Document Document Title
WO/2011/013344A1
The disclosed variable-resistance non-volatile memory device (100) is provided with a plurality of memory cells (M11, M12, M21, M22) each comprising a variable-resistance element (R11, R12, R21, R22) and a two-terminal current control el...  
WO/2011/011912A1
A type of phase change memory (PCM) and the process to manufacture it are provided. Said phase change memory comprises a base with a conductive area formed on it, and a wall space (8A,8B,18A,18B), an exposed side wall area formed on the ...  
WO/2011/013255A1
Provided is a nonvolatile storage device characterized by being provided with a storage unit comprising a first insulating layer (10), a second insulating layer (20) which is formed in contact with the first insulating layer (10) after t...  
WO/2011/008653A1
A non-volatile memory cell and method of use therefore are disclosed. In accordance with various embodiments, the memory cell comprises a tunneling region disposed between a conducting region and a metal region, wherein the tunneling reg...  
WO/2011/008385A1
A non-volatile memory device includes a plurality of pillars, (1) where each of the plurality of pillars contains a non- volatile memory cell containing a steering element (110) and a storage element (118) and at least one of a top corne...  
WO/2011/007538A1
Disclosed is a variably resistant element (100) used in a memory device having a through-hole, cross-point structure. Further disclosed is a variably resistant memory device using same. The variably resistant element (100) is provided wi...  
WO/2011/008651A1
A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide fo...  
WO/2011/004448A1
High reliability of a nonvolatile semiconductor storage device provided with the array of a memory cell in which a resistance change element and a selection element, such as a diode or a transistor, are connected is facilitated. The resi...  
WO/2011/000316A1
A nanostructure quick-switch memristor and method of manufacturing the same are provided. The memristor comprises an upper electrode, a lower electrode and three nano layers between the two electrodes, and the three nano layers are compo...  
WO/2010/150723A1
Disclosed is a variable resistance element which has higher reliability, higher integration and excellent insulation characteristics. Specifically disclosed is a variable resistance element wherein a first electrode that is composed of a...  
WO/2010/150720A1
Disclosed is a semiconductor device which comprises a variable resistance element having sufficient switching characteristics and has high reliability, high integration and excellent insulation characteristics. Specifically disclosed is ...  
WO/2010/146850A1
A nonvolatile storage device (10A) is provided with an upper electrode layer (2), a lower electrode layer (4), a resistance change layer (3) sandwiched between the upper electrode layer (2) and the lower electrode layer (4), and a charge...  
WO/2010/147073A1
In a resistive switching memory device provided with only two electrodes, use of the two electrodes is shared between both of cases where a resistance state is changed by the application of a control voltage, and where a drive voltage us...  
WO/2010/143570A1
Disclosed is a film-forming method which has: a preprocessing step (step (1)) wherein the inside of a processing container is exposed to a gas containing Cl and/or F in a state having no substrate in the processing container; a step (ste...  
WO/2010/143571A1
Disclosed is a method for forming a Ge-Sb-Te film, by which the Ge-Sb-Te film to be a Ge2Sb2Te5 film is formed on a substrate by CVD using a gaseous Ge raw material, a gaseous Sb raw material, and a gaseous Te raw material. The method ha...  
WO/2010/140296A1
Provided are a nonvolatile memory element wherein even if a defect occurs in an nonvolatile memory element, writing data to or reading data from other nonvolatile memory elements arranged in the same line or the same row in which the def...  
WO/2010/137339A1
A manufacturing method of memory-cell arrays, wherein multiple first conductor layers (2) and multiple second conductor layers (14) are provided in extension so as to three-dimensionally intersect with each other, on a semiconductor subs...  
WO/2010/137339A9
A manufacturing method of memory-cell arrays, wherein multiple first conductor layers (2) and multiple second conductor layers (14) are provided in extension so as to three-dimensionally intersect with each other, on a semiconductor subs...  
WO/2010/125805A1
Provided is a method for writing data to a resistance-change element (10a) that can reversibly transition between a high-resistance state and a low-resistance state depending on the polarity of an applied voltage. Even for a resistance-c...  
WO/2010/125540A2
A phase change material (112) for use in a phase change memory device (104) comprises antimony-tellurium-indium, wherein the phase change material (112) comprises in total more than 30 at% antimony.  
WO/2010/125780A1
Provided is a nonvolatile storage element which has less operational fluctuation and is capable of stable operation. The nonvolatile storage element is provided with: a first electrode (102); a second electrode (106); a variable resistan...  
WO/2010/125540A3
A phase change material for use in a phase change memory device comprises germanium-antimony-tellurium-indium, wherein the phase change material comprises in total more than 30 at% antimony, preferably 5-16 at% germanium, 30-60 at% antim...  
WO/2010/119677A1
A resistance-change element with a design which can improve the stability of the resistance-change operation and reduce the current necessary for changing the resistance-change element, in its initial state immediately after production, ...  
WO/2010/119671A1
A resistance-change non-volatile memory device (100) is provided with memory cells (M11, M12,...), each comprising a resistance-change element (R11, R12,...) and a current control element (D11, D12,...) connected in series. The resistanc...  
WO/2010/115924A1
The present invention provides a method for forming a NiO resistive memory element comprising a NiO resistive switching layer (31). The method comprises obtaining a substrate (34), providing a Ni layer on the substrate, and at least part...  
WO/2010/117911A3
A three-dimensional array especially adapted for memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. Memory elements are formed across a plurality of pla...  
WO/2010/117640A3
Methods in accordance with aspects of this invention form microelectronic structures in accordance with other aspects this invention, such as non-volatile memories, that include (1) a bottom electrode, (2) a resistivity-switchable layer ...  
WO/2010/118302A3
A method of forming a phase-change random access memory (PRAM) cell, and a structure of a phase-change random access memory (PRAM) cell are disclosed. The PRAM cell includes a bottom electrode, a heater resistor coupled to the bottom ele...  
WO/2010/118302A2
A method of forming a phase-change random access memory (PRAM) cell, and a structure of a phase-change random access memory (PRAM) cell are disclosed. The PRAM cell includes a bottom electrode, a heater resistor coupled to the bottom ele...  
WO/2010/116754A1
Provided is a drive method for increasing the retention characteristics of information (resistance values) written to resistance-change non-volatile memory elements. Said method includes: a first write process (S01) that applies a first ...  
WO/2010/117911A2
A three-dimensional array especially adapted for memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. Memory elements are formed across a plurality of pla...  
WO/2010/112985A1
Electrochromic thin film transistors, either self-sustaining or not, with lateral or vertical structure, deposited on any kind of functionalized substrate (1) or non-functionalized substrate are described, wherein an electrolyte material...  
WO2010109803A1
Memory cells (MC) are each provided with one transistor and one resistance-change element. Each transistor is provided with a first main terminal, a second main terminal, and a control terminal. Each resistance-change element is provided...  
WO2010109876A1
A method of driving a resistance-change element, comprising: a writing process of applying a write voltage pulse of a first polarity to a metal oxide layer (3) to change the resistance state of the metal oxide layer (3) from high to low ...  
WO/2010/106305A1
A phase change memory element can be temperature-controlled in order to change the crystal structure of at least a part of the memory element from a first structure (amorphous) to a second structure (crystalline), these structures having...  
WO/2010/101055A1
A solid memory in which data recording and erasion necessitate a lower current and data can be repeatedly rewritten a lager number of times. The solid memory is equipped with a recording layer comprising a multilayer structure in which t...  
WO/2010/098463A1
Disclosed is a switching element which comprises two electrodes and an organic bistable material intercalated between the electrodes, and which is expected to be applied to organic memory elements and others. Specifically disclosed is a ...  
WO/2010/095295A1
Disclosed is a resistive memory element which has a high resistance change rate and an excellent memory effect. Specifically disclosed is a resistive memory element (1) which comprises an element body (2) and at least a pair of electrode...  
WO/2010/095296A1
Disclosed is a resistive memory element which has a high resistance change ratio and an excellent memory effect. Specifically disclosed is a resistive memory element (1) which comprises an element body (2) and at least a pair of electrod...  
WO/2010/090128A1
A solid-state memory with which data can be repeatedly rewritten a greater number of times will be achieved. This solid-state memory is equipped with a recording layer (4), an upper electrode layer (6), and a lower electrode layer (3). T...  
WO/2010/090002A1
In a non-volatile memory element (100), a resistance change layer (107) comprises a first metal oxide MOx and a second metal oxide MOy. The reaction energy of the chemical reaction represented by chemical reaction formula (13) involving ...  
WO/2010/090900A1
A variable resistance memory cell structure and a method of forming it. The method includes forming a first electrode, forming an insulating material over the first electrode, forming a via in the insulating material to expose a surface ...  
WO/2010/087000A1
A process for fabricating a nonvolatile storage having a variable resistance layer where the resistance is varied by at least any one of an applied electric field and an applied current, and a first electrode for applying a voltage to th...  
WO/2010/088614A1
Programmable metallization memory cells (10) having an active electrode (18), an opposing inert electrode (12) and a variable resistive element (11) separating the active electrode from the inert electrode. The variable resistive element...  
WO/2010/087211A1
The disclosed non-volatile memory element is provided with a first electrode (103), a second electrode (105), and a resistance change layer (104) present between the first electrode (103) and the second electrode (105), and the resistanc...  
WO/2010/086916A1
A resistance change element of the present invention comprises: a first electrode (103); a second electrode (107); and a resistance change layer that is interposed between the first electrode (103) and the second electrode (107) and is p...  
WO/2010/084774A1
A nonvolatile memory cell (1) is provided with an electrode (10), an electrode (20), and an oxide layer (30) arranged between the electrode (10) and the electrode (20), and in the nonvolatile memory cell, resistance varies when a voltage...  
WO/2010/079829A1
In the case of forming an ion-conducting layer on a first electrode to be a metal ion supply source, insulating characteristics of the ion-conducting layer is prevented from deteriorating, while preventing the first electrode from oxidiz...  
WO/2010/079827A1
Disclosed is a semiconductor device with a built-in resistance change element that makes it possible to increase reliability, increase density, and decrease electrode resistance. Disclosed is a semiconductor device that has a resistance ...  
WO/2010/079816A1
Provided is a semiconductor device loaded with a variable resistance element that can increase reliability, increase density and prevent deterioration of insulating characteristics and yield. The semiconductor device has a variable resis...  

Matches 651 - 700 out of 6,078