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Matches 651 - 700 out of 6,124

Document Document Title
WO/2011/083327A1
A method of manufacturing an electrically actuable switch and comprising: depositing a first electrode on a surface; depositing an active layer or layers on top of said first electrode; and depositing a second electrode on top of said ac...  
WO/2011/080866A1
Disclosed is a memory device provided with a plurality of memory cells and an output line (12) shared among the memory cells. Each memory cell is provided with a transistor (6) formed on a substrate (1) and a resistance-change element (1...  
WO/2011/074243A1
A resistance-varying element comprising: a lower electrode; a first oxide layer formed on the lower electrode and comprising MOx (wherein x represents the content ratio of O to M); a second oxide layer formed on the first oxide layer and...  
WO/2011/074545A1
Disclosed are a semiconductor storage device and a method for manufacturing the semiconductor storage device, whereby the bit cost of memory using a variable resistance material is reduced. The semiconductor storage device has: a substra...  
WO/2011/069697A1
Nitrogen-doped MgO insulating layers exhibit voltage controlled resistance states, e.g., a high resistance and a low resistance state. Patterned nano-devices on the 100nm scale show highly reproducible switching characteristics. The volt...  
WO/2011/071009A1
Provided is a structure for a variable-resistance element that uses an electrochemical reaction. Said structure limits the position at which metal cross-linking breaks to the position where it is preferable that said cross-linking breaks...  
WO/2011/064801A1
Embodiments include but are not limited to apparatuses and systems including memory having a memory cell including a variable resistance memory layer, and a selector switch comprising a semiconductor oxide and being in direct contact wit...  
WO/2011/064967A1
Disclosed is a nonvolatile storage element, which can achieve a stable resistance change, and furthermore, which is miniaturized. Also disclosed is a method for manufacturing the nonvolatile storage element. The nonvolatile storage eleme...  
WO/2011/065537A1
Disclosed is a nonvolatile semiconductor storage device provided with a first wiring; a second wiring that exist at positions opposed to the first wiring; and a variable resistance layer that exists between the first wiring and the secon...  
WO/2011/064057A1
A method of fabricating a phase change memory element within a semiconductor structure and a semiconductor structure having the same that includes etching an opening to an upper surface of a bottom electrode, the opening being formed of ...  
WO/2011/058947A1
Disclosed is a variable resistance element which has a first electrode (101), a second electrode (103), and an ion conducting layer (102), which is provided between the first electrode (101) and the second electrode (103) and contains at...  
WO/2011/056474A1
A nonvolatile memory array architecture includes a resistive element between each common source/drain (intermediate) node and data line (or bit line), in an otherwise virtual ground-like memory array having serially-connected transistors...  
WO/2011/052279A1
Compared to conventional technologies related to optical recording bodies using phase change, the recording/deletion speed can be made drastically faster, and the phase change speed can be controlled at the speed of a phonon time period ...  
WO/2011/052354A1
Disclosed is a variable resistance nonvolatile storage element wherein an electrode suitable for a variable resistance operation is provided, said electrode being composed of a metal nitride layer containing Ti and N. The nonvolatile sto...  
WO/2011/052239A1
The disclosed variable resistance non-volatile memory device is provided with: a semiconductor substrate (301); a variable resistance element (309) configured from a lower electrode (309a), an upper electrode (309c), and a variable resis...  
WO/2011/052292A1
The disclosed device has memory cells provided with transistors and variable resistance elements, and contains memory blocks (10) consisting of N number of memory cells sequentially connected in series. One end of a first transistor (T1)...  
WO/2011/049830A1
Memory cells, and methods of forming such memory cells, are provided that include a steering element (14) coupled to a carbon-based reversible resistivity switching material (12) that has an increased resistivity, and a switching current...  
WO/2011/049829A1
Memory cells, and methods of forming such memory cells, are provided that include a steering element (14) coupled to a carbon-based reversible resistivity switching material (12) that has an increased resistivity, and a switching current...  
WO/2011/045886A1
Disclosed is a resistance-change-type non-volatile storage device for reducing variation in resistance values of a low resistance state of a resistance-change element for stable performance. The resistance-change-type non-volatile storag...  
WO/2011/043448A1
Provided is a semiconductor device comprising at least a first electrode, a second electrode, and a layer that is interposed between the first electrode and the second electrode and includes a transition metal oxide layer, the transition...  
WO/2011/030916A1
The disclosed phase change material has a high crystallization temperature and excellent thermal stability in an amorphous phase, and has a composition represented by the general chemical formula GexMyTe100-x-y, wherein M represents one ...  
WO/2011/031534A1
Various embodiments described herein provide a memory device including a variable resistance material (210) having a thermally isolating and electrically conductive isolation region (270, 280) arranged between the variable resistance mat...  
WO/2011/030559A1
In order to attain a more miniscule size and larger capacity of memory by reducing breakdown voltage for causing resistance variation and by suppressing irregularity of said breakdown voltage, disclosed is a non-volatile memory device (1...  
WO/2011/024271A1
A nonvolatile memory element comprising a first conductive layer, a second conductive layer so arranged as to face the first conductive layer, and a variable resistance layer arranged between the first conductive layer and the second con...  
WO/2011/024455A1
Disclosed are a resistance-change semiconductor memory device that has a stable resistance change without being influenced by the base thereof and that is suitable for increased capacity, and a production method therefor. The semiconduct...  
WO/2011/013344A1
The disclosed variable-resistance non-volatile memory device (100) is provided with a plurality of memory cells (M11, M12, M21, M22) each comprising a variable-resistance element (R11, R12, R21, R22) and a two-terminal current control el...  
WO/2011/011912A1
A type of phase change memory (PCM) and the process to manufacture it are provided. Said phase change memory comprises a base with a conductive area formed on it, and a wall space (8A,8B,18A,18B), an exposed side wall area formed on the ...  
WO/2011/013255A1
Provided is a nonvolatile storage device characterized by being provided with a storage unit comprising a first insulating layer (10), a second insulating layer (20) which is formed in contact with the first insulating layer (10) after t...  
WO/2011/008653A1
A non-volatile memory cell and method of use therefore are disclosed. In accordance with various embodiments, the memory cell comprises a tunneling region disposed between a conducting region and a metal region, wherein the tunneling reg...  
WO/2011/008385A1
A non-volatile memory device includes a plurality of pillars, (1) where each of the plurality of pillars contains a non- volatile memory cell containing a steering element (110) and a storage element (118) and at least one of a top corne...  
WO/2011/007538A1
Disclosed is a variably resistant element (100) used in a memory device having a through-hole, cross-point structure. Further disclosed is a variably resistant memory device using same. The variably resistant element (100) is provided wi...  
WO/2011/008651A1
A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide fo...  
WO/2011/004448A1
High reliability of a nonvolatile semiconductor storage device provided with the array of a memory cell in which a resistance change element and a selection element, such as a diode or a transistor, are connected is facilitated. The resi...  
WO/2011/000316A1
A nanostructure quick-switch memristor and method of manufacturing the same are provided. The memristor comprises an upper electrode, a lower electrode and three nano layers between the two electrodes, and the three nano layers are compo...  
WO/2010/150723A1
Disclosed is a variable resistance element which has higher reliability, higher integration and excellent insulation characteristics. Specifically disclosed is a variable resistance element wherein a first electrode that is composed of a...  
WO/2010/150720A1
Disclosed is a semiconductor device which comprises a variable resistance element having sufficient switching characteristics and has high reliability, high integration and excellent insulation characteristics. Specifically disclosed is ...  
WO/2010/146850A1
A nonvolatile storage device (10A) is provided with an upper electrode layer (2), a lower electrode layer (4), a resistance change layer (3) sandwiched between the upper electrode layer (2) and the lower electrode layer (4), and a charge...  
WO/2010/147073A1
In a resistive switching memory device provided with only two electrodes, use of the two electrodes is shared between both of cases where a resistance state is changed by the application of a control voltage, and where a drive voltage us...  
WO/2010/143570A1
Disclosed is a film-forming method which has: a preprocessing step (step (1)) wherein the inside of a processing container is exposed to a gas containing Cl and/or F in a state having no substrate in the processing container; a step (ste...  
WO/2010/143571A1
Disclosed is a method for forming a Ge-Sb-Te film, by which the Ge-Sb-Te film to be a Ge2Sb2Te5 film is formed on a substrate by CVD using a gaseous Ge raw material, a gaseous Sb raw material, and a gaseous Te raw material. The method ha...  
WO/2010/140296A1
Provided are a nonvolatile memory element wherein even if a defect occurs in an nonvolatile memory element, writing data to or reading data from other nonvolatile memory elements arranged in the same line or the same row in which the def...  
WO/2010/137339A1
A manufacturing method of memory-cell arrays, wherein multiple first conductor layers (2) and multiple second conductor layers (14) are provided in extension so as to three-dimensionally intersect with each other, on a semiconductor subs...  
WO/2010/137339A9
A manufacturing method of memory-cell arrays, wherein multiple first conductor layers (2) and multiple second conductor layers (14) are provided in extension so as to three-dimensionally intersect with each other, on a semiconductor subs...  
WO/2010/125805A1
Provided is a method for writing data to a resistance-change element (10a) that can reversibly transition between a high-resistance state and a low-resistance state depending on the polarity of an applied voltage. Even for a resistance-c...  
WO/2010/125540A2
A phase change material (112) for use in a phase change memory device (104) comprises antimony-tellurium-indium, wherein the phase change material (112) comprises in total more than 30 at% antimony.  
WO/2010/125780A1
Provided is a nonvolatile storage element which has less operational fluctuation and is capable of stable operation. The nonvolatile storage element is provided with: a first electrode (102); a second electrode (106); a variable resistan...  
WO/2010/125540A3
A phase change material for use in a phase change memory device comprises germanium-antimony-tellurium-indium, wherein the phase change material comprises in total more than 30 at% antimony, preferably 5-16 at% germanium, 30-60 at% antim...  
WO/2010/119677A1
A resistance-change element with a design which can improve the stability of the resistance-change operation and reduce the current necessary for changing the resistance-change element, in its initial state immediately after production, ...  
WO/2010/119671A1
A resistance-change non-volatile memory device (100) is provided with memory cells (M11, M12,...), each comprising a resistance-change element (R11, R12,...) and a current control element (D11, D12,...) connected in series. The resistanc...  
WO/2010/115924A1
The present invention provides a method for forming a NiO resistive memory element comprising a NiO resistive switching layer (31). The method comprises obtaining a substrate (34), providing a Ni layer on the substrate, and at least part...  

Matches 651 - 700 out of 6,124