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Matches 651 - 700 out of 6,272

Document Document Title
WO/2011/161936A1
Disclosed is a method for manufacturing a variable resistance element, which includes: processes (1000 to 1004) for forming conductive plugs in an interlayer insulation film on a substrate; a process (1005) for leveling the top surface o...  
WO/2011/157096A1
A resistive random access memory (RRAM) device and a manufacturing method thereof are provided. The RRAM device includes a memory unit which is disposed between a bit line and a word line. The memory unit includes a resistive element (40...  
WO/2011/159581A2
A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has first and second resistance-switching layers on ...  
WO/2011/159584A1
A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has a resistance-switching layer, a conductive inter...  
WO/2011/159583A2
A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has first and second resistance-switching layers on ...  
WO/2011/159582A2
A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME). The RSME has first and second resistance-switching layers on either side of a conductive interm...  
WO/2011/158691A1
Provided is a variable resistance element that makes it possible to reduce forming voltage while maintaining reliability. A variable resistance element as recited in one embodiment is equipped with a first electrode, a second electrode, ...  
WO/2011/158821A1
The present semiconductor device has multilayer wiring, first electrodes (5) and second electrodes (10a, 10b) provided between the multilayer wiring, and two resistance variable resistance elements (22a, 22b) containing variable resistan...  
WO/2011/155210A1
Disclosed are: a non-volatile memory element in which the voltage of an electric pulse necessary for initial brake down can be reduced and the fluctuation in resistivity values can also be reduced; and a non-volatile memory device equipp...  
WO/2011/150750A1
A method for manufacturing memory cell including resistor is provided, which includes the following steps: a) forming a bottom electrode layer on an insulation substrate; b) forming a varistor material layer on the bottom electrode layer...  
WO/2011/152061A1
Provided is a multilayer cross-point variable-resistance nonvolatile storage device made up of memory cells that are formed in the same direction such that the characteristics in each layer become stable. The memory cells (51) are formed...  
WO/2011/150749A1
A resistive random access memory (RRAM) device, a manufacturing method thereof and an operation method thereof are provided. The RRAM includes a resistive memory element (120) and a Schottky diode (130). The resistive memory element (120...  
WO/2011/148944A1
Disclosed is a thin film magnetic device which comprises a magnetic layer, an alcohol etchable layer, and a factor barrier layer. The magnetic layer is provided on top of a substrate. The alcohol etchable layer is provided on the magneti...  
WO/2011/142386A1
Disclosed is a semiconductor device (10) which is embedded with a non-volatile element (100) in which a state immediately preceding the supply of power is maintained even when power is no longer supplied. The non-volatile element (100) i...  
WO/2011/106156A3
A method of forming a reversible resistance - switching metal - carbon -metal ("MCM") device is provided, the device including a first conducting layer (20), a second conducting layer (22), and a reversible resistance - switching element...  
WO/2011/135843A1
Disclosed is a method for manufacturing a variable resistance nonvolatile storage device, which includes: a step wherein a plurality of lower layer copper wiring lines (18), each of which has a stripe shape, are formed on a substrate (11...  
WO/2011/106155A3
A method of forming a memory cell is provided that includes forming a metal - insulator-metal (MIM) stack (27), the MIM stack including (a) a first conductive carbon layer (35); (b) a low-hydrogen, silicon - containing carbon layer (12) ...  
WO/2011/132423A1
Disclosed is a variable-resistance non-volatile storage device which varies resistance in a stable manner and is adapted for miniaturization. The non-volatile storage device comprises: a first wiring (101) formed by a barrier metal layer...  
WO/2011/106329A4
A memory device in a 3-D read and write memory includes a resistance- changing layer, and a local contact resistance in series with, and local to, the resistance-changing layer. The local contact resistance is established by a junction b...  
WO/2011/130212A1
In a first aspect, a method of forming a metal-insulator-metal ("MIM") stack is provided, the method including: (1) forming a dielectric material having an opening and a first conductive carbon layer within the opening; (2) forming a spa...  
WO/2011/121970A1
Disclosed is a forming method for a variable resistance non-volatile memory element which provides lower forming voltage than conventional methods and whereby variation in forming voltage between individual variable resistance elements c...  
WO/2011/119175A1
Germanium antimony telluride materials are described, e.g., material of the formula GexSbyTezCmNn, wherein x is about 0.1-0.6, y is about 0-0.7, z is about 0.2-0.9, m is about 0.02-0.20, and n is about 0.2-0.20. One specific composition ...  
WO/2011/118513A1
According to one embodiment, a resistance change device includes a first electrode including a metal, a second electrode, and an amorphous oxide layer including Si and O between the first and second electrode, the layer having a concentr...  
WO/2011/118185A1
Disclosed is a method for driving a non-volatile memory element (100) in which a variable resistance element (10) and a current control element (20) are connected in series, wherein: the variable resistance element (10) is provided with ...  
WO/2011/115926A1
A MIM stack (200a) is provided that includes (1) a first conductive layer (108) comprising a first metal - silicide layer (108a) and a second metal - silicide layer (108b); (2) a resistivity- switching layer (104) comprising a metal oxid...  
WO/2011/114666A1
Provided is a current control element that is able to prevent the occurrence of a write disturb even when electrical pulses with different polarities are applied, and that is able to apply a large current to a variable resistance element...  
WO/2011/114173A1
According to the present invention there is provided a chalcogenide phase change material which can be converted between first and second states, wherein the material comprises a chiral species and wherein at least a portion of the mater...  
WO/2011/115188A1
Disclosed is a variable resistance element which can operate at a low voltage, while maintaining a low leak current. The variable resistance element includes a first electrode (101), a second electrode (103), and an ion conduction layer ...  
WO/2011/115924A1
A metal - insulator-metal (MIM) stack is provided that includes ( 1 ) a first conductive layer comprising a silicon - germanium (SiGe) alloy; ( 2 ) a resistivity- switching layer comprising a metal oxide layer formed above the first cond...  
WO/2011/114725A1
Disclosed is a nonvolatile memory element that can be initialized at low voltage, and which is provided with a variable resistance layer (116), in which the resistance value varies reversibly on the basis of an electrical signal conveyed...  
WO/2011/111361A1
Disclosed is a variable resistance nonvolatile memory element which is capable of suppressing variations in the resistance. Specifically disclosed is a nonvolatile memory element which comprises: a silicon substrate (11); a lower electro...  
WO/2011/110618A1
The present invention provides a solution to the problem of non-volatile electronic data storage by using a crystalline oxide preferably having a perovskite structure. A multistage process comprising modification of conductivity and surf...  
WO/2011/109019A1
Resistive switches and related methods are provided. Such a resistive switch includes an active material in contact with opposite end electrodes. The active material defines electron traps that capture or release charges in accordance wi...  
WO/2011/105060A1
Disclosed is a manufacturing method, whereby a nonvolatile memory device having a stable memory performance can be manufactured with a simple process. The method includes: a step wherein a laminated structure is formed by alternately lam...  
WO/2011/106156A2
A method of forming a reversible resistance-switching metal-carbon-metal ("MCM") device is provided, the device including a first conducting layer, a second conducting layer, and a reversible resistance-switching element disposed between...  
WO/2011/084334A3
A carbon/tunneling-barrier/carbon diode and method for forming the same are disclosed. The carbon/tunneling-barrier/carbon may be used as a steering element in a memory array. Each memory cell in the memory array may include a reversible...  
WO/2011/106329A1
A memory device in a 3-D read and write memory includes a resistance- changing layer, and a local contact resistance in series with, and local to, the resistance-changing layer. The local contact resistance is established by a junction b...  
WO/2011/100079A1
Techniques for forming a phase change memory cell. An example method includes forming a bottom electrode within a substrate. The method includes forming a phase change layer above the bottom electrode. The method includes forming a cappi...  
WO/2010/137339A9
A manufacturing method of memory-cell arrays, wherein multiple first conductor layers (2) and multiple second conductor layers (14) are provided in extension so as to three-dimensionally intersect with each other, on a semiconductor subs...  
WO/2011/097389A1
A non-volatile memory cell includes a first electrode (101), a steering element (110), a storage element (118) located in series with the steering element, a plurality of discrete conductive nano - features (211) separated from each othe...  
WO/2011/096194A1
Disclosed are a method of driving a resistance changing element capable of stable operation, and a nonvolatile memory device that executes the method. The method comprises the steps of writing to the nonvolatile memory device, which lowe...  
WO/2011/097077A1
The present invention relates to a method of forming a memory cell that includes (a) forming one or more layers (104a-c) of steering element material above a substrate; (b) etching a portion (104 c,b) of the steering element material to ...  
WO/2011/091709A1
A Ferro-Resistive Random Access Memory (Ferro-RRAM), an operation method and a manufacturing method thereof, belonging to the technical field of memory device, are provided. The Ferro-RRAM includes an upper electrode (101), a lower elect...  
WO/2011/089682A1
Disclosed is a method for manufacturing a non-volatile semiconductor storage element which has a variable resistance element (17) and a non-ohmic element (20). The variable resistance element (17) is constructed from a first electrode (1...  
WO/2011/090152A1
Disclosed is a semiconductor device provided with a variable resistance element that has a lower section electrode, a variable resistance element film comprised of metallic oxide, and an upper section electrode in between a first wiring ...  
WO/2011/086725A1
In a phase-change memory formed in a memory matrix, heat generated in the phase-change memory is prevented from being dissipated through an interlayer insulating film by forming a void having lower heat conductivity than that of the inte...  
WO/2011/084482A1
Self-aligning fabrication methods for forming memory access devices comprising a doped chalcogenide material. The methods may be used for forming three-dimensionally stacked cross point memory arrays. The method includes forming an insul...  
WO/2011/083632A1
Disclosed is a memory cell that includes a transistor (T1) and a variable resistance element (RC1), which are formed on a base material (10). The transistor (T1) includes: a gate electrode (20), a source electrode (50), and a drain elect...  
WO/2011/084334A2
A carbon/tunneling-barrier/carbon diode and method for forming the same are disclosed. The carbon/tunneling-barrier/carbon may be used as a steering element in a memory array. Each memory cell in the memory array may include a reversible...  
WO/2011/083327A1
A method of manufacturing an electrically actuable switch and comprising: depositing a first electrode on a surface; depositing an active layer or layers on top of said first electrode; and depositing a second electrode on top of said ac...  

Matches 651 - 700 out of 6,272