Login| Sign Up| Help| Contact|

Patent Searching and Data


Matches 701 - 750 out of 6,165

Document Document Title
WO/2010/125540A3
A phase change material for use in a phase change memory device comprises germanium-antimony-tellurium-indium, wherein the phase change material comprises in total more than 30 at% antimony, preferably 5-16 at% germanium, 30-60 at% antim...  
WO/2010/119677A1
A resistance-change element with a design which can improve the stability of the resistance-change operation and reduce the current necessary for changing the resistance-change element, in its initial state immediately after production, ...  
WO/2010/119671A1
A resistance-change non-volatile memory device (100) is provided with memory cells (M11, M12,...), each comprising a resistance-change element (R11, R12,...) and a current control element (D11, D12,...) connected in series. The resistanc...  
WO/2010/115924A1
The present invention provides a method for forming a NiO resistive memory element comprising a NiO resistive switching layer (31). The method comprises obtaining a substrate (34), providing a Ni layer on the substrate, and at least part...  
WO/2010/117911A3
A three-dimensional array especially adapted for memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. Memory elements are formed across a plurality of pla...  
WO/2010/117640A3
Methods in accordance with aspects of this invention form microelectronic structures in accordance with other aspects this invention, such as non-volatile memories, that include (1) a bottom electrode, (2) a resistivity-switchable layer ...  
WO/2010/118302A3
A method of forming a phase-change random access memory (PRAM) cell, and a structure of a phase-change random access memory (PRAM) cell are disclosed. The PRAM cell includes a bottom electrode, a heater resistor coupled to the bottom ele...  
WO/2010/118302A2
A method of forming a phase-change random access memory (PRAM) cell, and a structure of a phase-change random access memory (PRAM) cell are disclosed. The PRAM cell includes a bottom electrode, a heater resistor coupled to the bottom ele...  
WO/2010/116754A1
Provided is a drive method for increasing the retention characteristics of information (resistance values) written to resistance-change non-volatile memory elements. Said method includes: a first write process (S01) that applies a first ...  
WO/2010/117911A2
A three-dimensional array especially adapted for memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. Memory elements are formed across a plurality of pla...  
WO/2010/112985A1
Electrochromic thin film transistors, either self-sustaining or not, with lateral or vertical structure, deposited on any kind of functionalized substrate (1) or non-functionalized substrate are described, wherein an electrolyte material...  
WO2010109803A1
Memory cells (MC) are each provided with one transistor and one resistance-change element. Each transistor is provided with a first main terminal, a second main terminal, and a control terminal. Each resistance-change element is provided...  
WO2010109876A1
A method of driving a resistance-change element, comprising: a writing process of applying a write voltage pulse of a first polarity to a metal oxide layer (3) to change the resistance state of the metal oxide layer (3) from high to low ...  
WO/2010/106305A1
A phase change memory element can be temperature-controlled in order to change the crystal structure of at least a part of the memory element from a first structure (amorphous) to a second structure (crystalline), these structures having...  
WO/2010/101055A1
A solid memory in which data recording and erasion necessitate a lower current and data can be repeatedly rewritten a lager number of times. The solid memory is equipped with a recording layer comprising a multilayer structure in which t...  
WO/2010/098463A1
Disclosed is a switching element which comprises two electrodes and an organic bistable material intercalated between the electrodes, and which is expected to be applied to organic memory elements and others. Specifically disclosed is a ...  
WO/2010/095295A1
Disclosed is a resistive memory element which has a high resistance change rate and an excellent memory effect. Specifically disclosed is a resistive memory element (1) which comprises an element body (2) and at least a pair of electrode...  
WO/2010/095296A1
Disclosed is a resistive memory element which has a high resistance change ratio and an excellent memory effect. Specifically disclosed is a resistive memory element (1) which comprises an element body (2) and at least a pair of electrod...  
WO/2010/090128A1
A solid-state memory with which data can be repeatedly rewritten a greater number of times will be achieved. This solid-state memory is equipped with a recording layer (4), an upper electrode layer (6), and a lower electrode layer (3). T...  
WO/2010/090002A1
In a non-volatile memory element (100), a resistance change layer (107) comprises a first metal oxide MOx and a second metal oxide MOy. The reaction energy of the chemical reaction represented by chemical reaction formula (13) involving ...  
WO/2010/090900A1
A variable resistance memory cell structure and a method of forming it. The method includes forming a first electrode, forming an insulating material over the first electrode, forming a via in the insulating material to expose a surface ...  
WO/2010/087000A1
A process for fabricating a nonvolatile storage having a variable resistance layer where the resistance is varied by at least any one of an applied electric field and an applied current, and a first electrode for applying a voltage to th...  
WO/2010/088614A1
Programmable metallization memory cells (10) having an active electrode (18), an opposing inert electrode (12) and a variable resistive element (11) separating the active electrode from the inert electrode. The variable resistive element...  
WO/2010/087211A1
The disclosed non-volatile memory element is provided with a first electrode (103), a second electrode (105), and a resistance change layer (104) present between the first electrode (103) and the second electrode (105), and the resistanc...  
WO/2010/086916A1
A resistance change element of the present invention comprises: a first electrode (103); a second electrode (107); and a resistance change layer that is interposed between the first electrode (103) and the second electrode (107) and is p...  
WO/2010/084774A1
A nonvolatile memory cell (1) is provided with an electrode (10), an electrode (20), and an oxide layer (30) arranged between the electrode (10) and the electrode (20), and in the nonvolatile memory cell, resistance varies when a voltage...  
WO/2010/079829A1
In the case of forming an ion-conducting layer on a first electrode to be a metal ion supply source, insulating characteristics of the ion-conducting layer is prevented from deteriorating, while preventing the first electrode from oxidiz...  
WO/2010/079827A1
Disclosed is a semiconductor device with a built-in resistance change element that makes it possible to increase reliability, increase density, and decrease electrode resistance. Disclosed is a semiconductor device that has a resistance ...  
WO/2010/079816A1
Provided is a semiconductor device loaded with a variable resistance element that can increase reliability, increase density and prevent deterioration of insulating characteristics and yield. The semiconductor device has a variable resis...  
WO/2010/076837A1
A storage element structure for phase change memory (PCM) cell and a method for forming such a structure are disclosed. The method of forming a storage element structure, comprises providing a multilayer stack comprising a chalcogenide l...  
WO/2010/078467A1
In a first aspect, a method of forming a memory cell is provided that includes (1) forming a metal-insulator-metal ("MIM") stack above a substrate, the MIM stack including a carbon-based switching material having a resistivity of at leas...  
WO/2010/076827A1
A method for fabricating a phase- change memory cell is described. The method includes forming a dielectric layer (228) on a metal layer (226) above a substrate. A phase-change material layer (230) is formed on the dielectric layer. A co...  
WO/2010/073904A1
Disclosed is a method for manufacturing a semiconductor storage element having an electrode layer and a chalcogenide material layer with improved film adhesiveness; further disclosed is a sputter device. One embodiment of this manufactur...  
WO/2010/073897A1
A variable resistance element which comprises a lower electrode (101), an upper electrode (103) and a variable resistance layer (102) that is positioned between the lower electrode (101) and the upper electrode (103). The variable resis...  
WO/2010/074785A1
An integrated circuit including vertically oriented diode structures between conductors and methods of fabricating the same are provided. The diode is a metal-insulator diode having a first metal layer, a first insulating layer, a second...  
WO/2010/070895A1
Disclosed is a non-volatile storage device (100) which is provided with a variable resistance element and which allows stable operation. The non-volatile storage device (100) is provided with: memory cells (M111, M112, …) wherein the r...  
WO/2010/067585A1
Disclosed is a resistance change element which is capable of preventing the interface resistance, for the side for which the resistance is not changed, from becoming high due to the applied voltage. The resistance change element is confi...  
WO/2010/064444A1
Disclosed is a nonvolatile memory element (10) provided with a substrate (11); a lower electrode layer (15) and a resistance layer (16) formed sequentially on the substrate (11); a variable resistance layer (31) formed on the resistance ...  
WO/2010/064340A1
Provided is a variable-resistance type nonvolatile storage device which can change resistance thereof stably and accurately at a low voltage. A method for manufacturing the device is also disclosed. The nonvolatile storage device inclu...  
WO/2010/064410A1
Disclosed is a nonvolatile memory element provided with a first electrode (103), a second electrode (109), and a variable resistance layer (106) which is placed between the first electrode and the second electrode and has the resistance ...  
WO/2010/064446A1
Provided is a nonvolatile memory element capable of stable resistance change operation at a low breakdown voltage. The nonvolatile memory element (100) is equipped with a first electrode layer (103), a second electrode layer (105), and a...  
WO/2010/058569A1
A variable resistance element (105) reversibly switches between a low resistance state and a high resistance state by application of electrical signals of different polarities. If a current flowing when a voltage of a first polarity is a...  
WO/2010/050118A1
Provided is a solid-state memory manufacturing method for manufacturing a solid-state memory including a recording layer having an electric characteristic which is changed by the phase transformation. The method includes a recording lay...  
WO/2010/050094A1
Provided are a nonvolatile semiconductor storage device and a manufacturing method therefor with which microminiaturization and large capacity are possible due to a cross-point structure wherein memory cells are formed in contact holes a...  
WO/2010/050117A1
Provided is a solid-state memory including a recording layer containing Te and Al as main contents and having an electric characteristic which is changed by a phase transformation. The recording layer is formed by two or more layers hav...  
WO/2010/048408A3
A method of forming a reversible resistance-switching metal-insulator-metal ("MIM") stack is provided, the method including forming a first conducting layer comprising a degenerately doped semiconductor material, and forming a carbon-bas...  
WO/2010/041373A1
Disclosed is an information recording medium equipped with a recording layer that can generate a phase change through application of electrical energy. The recording layer includes as the primary component a material comprised of Ge, Te ...  
WO/2010/038423A1
A nonvolatile storage element is composed of a first electrode (103) formed on a substrate (101), a variable resistance layer (108) and a second electrode (107). The variable resistance layer has a multilayer structure which includes at...  
WO/2010/038216A1
A phase change memory cell, e.g. a line-cell (2), and fabrication thereof, the cell comprising: two electrodes (6, 8); phase change memory material (10) and a dielectric barrier (12). The dielectric barrier (12) is arranged to provide el...  
WO/2010/037611A1
A memory cell structure and method for forming the same. The method includes forming a via (112) within a dielectric layer (108, 110). The via is formed over the center of an electrically conducting bottom electrode (104). The method inc...  

Matches 701 - 750 out of 6,165