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Matches 701 - 750 out of 6,078

Document Document Title
WO/2010/076837A1
A storage element structure for phase change memory (PCM) cell and a method for forming such a structure are disclosed. The method of forming a storage element structure, comprises providing a multilayer stack comprising a chalcogenide l...  
WO/2010/078467A1
In a first aspect, a method of forming a memory cell is provided that includes (1) forming a metal-insulator-metal ("MIM") stack above a substrate, the MIM stack including a carbon-based switching material having a resistivity of at leas...  
WO/2010/076827A1
A method for fabricating a phase- change memory cell is described. The method includes forming a dielectric layer (228) on a metal layer (226) above a substrate. A phase-change material layer (230) is formed on the dielectric layer. A co...  
WO/2010/073904A1
Disclosed is a method for manufacturing a semiconductor storage element having an electrode layer and a chalcogenide material layer with improved film adhesiveness; further disclosed is a sputter device. One embodiment of this manufactur...  
WO/2010/073897A1
A variable resistance element which comprises a lower electrode (101), an upper electrode (103) and a variable resistance layer (102) that is positioned between the lower electrode (101) and the upper electrode (103). The variable resis...  
WO/2010/074785A1
An integrated circuit including vertically oriented diode structures between conductors and methods of fabricating the same are provided. The diode is a metal-insulator diode having a first metal layer, a first insulating layer, a second...  
WO/2010/070895A1
Disclosed is a non-volatile storage device (100) which is provided with a variable resistance element and which allows stable operation. The non-volatile storage device (100) is provided with: memory cells (M111, M112, …) wherein the r...  
WO/2010/067585A1
Disclosed is a resistance change element which is capable of preventing the interface resistance, for the side for which the resistance is not changed, from becoming high due to the applied voltage. The resistance change element is confi...  
WO/2010/064444A1
Disclosed is a nonvolatile memory element (10) provided with a substrate (11); a lower electrode layer (15) and a resistance layer (16) formed sequentially on the substrate (11); a variable resistance layer (31) formed on the resistance ...  
WO/2010/064340A1
Provided is a variable-resistance type nonvolatile storage device which can change resistance thereof stably and accurately at a low voltage. A method for manufacturing the device is also disclosed. The nonvolatile storage device inclu...  
WO/2010/064410A1
Disclosed is a nonvolatile memory element provided with a first electrode (103), a second electrode (109), and a variable resistance layer (106) which is placed between the first electrode and the second electrode and has the resistance ...  
WO/2010/064446A1
Provided is a nonvolatile memory element capable of stable resistance change operation at a low breakdown voltage. The nonvolatile memory element (100) is equipped with a first electrode layer (103), a second electrode layer (105), and a...  
WO/2010/058569A1
A variable resistance element (105) reversibly switches between a low resistance state and a high resistance state by application of electrical signals of different polarities. If a current flowing when a voltage of a first polarity is a...  
WO/2010/050118A1
Provided is a solid-state memory manufacturing method for manufacturing a solid-state memory including a recording layer having an electric characteristic which is changed by the phase transformation. The method includes a recording lay...  
WO/2010/050094A1
Provided are a nonvolatile semiconductor storage device and a manufacturing method therefor with which microminiaturization and large capacity are possible due to a cross-point structure wherein memory cells are formed in contact holes a...  
WO/2010/050117A1
Provided is a solid-state memory including a recording layer containing Te and Al as main contents and having an electric characteristic which is changed by a phase transformation. The recording layer is formed by two or more layers hav...  
WO/2010/048408A3
A method of forming a reversible resistance-switching metal-insulator-metal ("MIM") stack is provided, the method including forming a first conducting layer comprising a degenerately doped semiconductor material, and forming a carbon-bas...  
WO/2010/041373A1
Disclosed is an information recording medium equipped with a recording layer that can generate a phase change through application of electrical energy. The recording layer includes as the primary component a material comprised of Ge, Te ...  
WO/2010/038423A1
A nonvolatile storage element is composed of a first electrode (103) formed on a substrate (101), a variable resistance layer (108) and a second electrode (107). The variable resistance layer has a multilayer structure which includes at...  
WO/2010/038216A1
A phase change memory cell, e.g. a line-cell (2), and fabrication thereof, the cell comprising: two electrodes (6, 8); phase change memory material (10) and a dielectric barrier (12). The dielectric barrier (12) is arranged to provide el...  
WO/2010/037611A1
A memory cell structure and method for forming the same. The method includes forming a via (112) within a dielectric layer (108, 110). The via is formed over the center of an electrically conducting bottom electrode (104). The method inc...  
WO/2010/038442A1
Provided are a method for driving a resistance change element capable of a stable operation and a nonvolatile storage device which implements the method. The method comprises a writing step for changing the resistance state of a resista...  
WO/2010/038786A1
Disclosed is a memory element having low-power consumption. Also disclosed are a method for manufacturing the memory element and a memory device comprising the memory element. The memory element comprises a resistor that causes a change...  
WO/2010/036618A1
A metal-insulator diode is disclosed. In one aspect, the metal-insulator diode comprises a first electrode comprising a first metal, a first region comprising a first insulating material, a second region comprising a second insulating ma...  
WO/2010/036619A1
Forming a metal-insulator diode and carbon memory element in a single damascene process is disclosed. A trench having a bottom and a sidewall is formed in an insulator. A first diode electrode is formed in the trench during a single dama...  
WO/2010/036616A1
A metal-insulator diode is disclosed. In one aspect, the metal-insulator diode comprises first and second electrode and first and second insulators arranged as follows. An insulating region has a trench formed therein. The trench has a b...  
WO/2010/032470A1
Disclosed is a current suppressing element that can prevent the occurrence of write disturbance, can allow high current to flow into a resistance variable element, and can write data without any problem even when electric pulses having d...  
WO/2010/032468A1
Disclosed is a storage element provided with a resistance variable element (1) wherein an electrical resistance value of each of the storage elements (3) arranged in matrix in a storage device (21) changes when an electrical pulse having...  
WO/2010/029645A1
A nonvolatile storage device is provided with an electrode, and a storage layer which is connected to the electrode and permits resistance to change by a current applied from the electrode. The electrode is provided with a first layer an...  
WO/2010/029634A1
Provided is a resistance-varying element comprising a resistance-varying portion including a first resistance-varying layer caused to exhibit a plurality of states of different electric resistivities by at least one of an applied voltage...  
WO/2010/029607A1
An information recording/reproducing device is provided with a recording layer and a driving section. The recording layer has a first layer which contains a first compound. The first compound contains a mixed crystal of a first oxide con...  
WO/2010/026923A1
Disclosed is a storage element that can simultaneously satisfy the number of times of repetitive operations and low-voltage operating characteristics that are in a trade-off relationship. A high-resistivity layer (4) and an ion source l...  
WO/2010/026924A1
Disclosed is a storage element that can increase the number of times of repetitive operations and has an excellent balance between high-speed operating characteristics for writing and erasing and resistance value holding properties durin...  
WO/2010/024936A1
Phase change memory materials and more particularly GeAs telluride materials useful for phase change memory applications, for example, optical and electronic data storage are described.  
WO/2010/021134A1
A memory cell (300) is configured so that it is equipped with a semiconductor substrate (301); a variable resistance element (309) that consists of a lower electrode (309a), an upper electrode (309c), and a variable resistance layer (309...  
WO/2010/022097A1
In some aspects, a method of forming a carbon nano-tube (CNT) memory cell is provided that includes (1) forming a first conductor; (2) forming a steering element above the first conductor; (3) forming a first conducting layer above the f...  
WO/2010/022036A3
A method for fabricating a memory device includes depositing a phase-change and/or a resistive change material. The memory device is formed photolithographically using sixteen or fewer masks.  
WO/2010/012683A1
Memory device (100) comprising at least: an inert electrode (107) baced on an electrically conductive material; a portion (108) of at least one material having a higher resistivity than the material of the inert electrode, which portion ...  
WO/2010/010816A1
Disclosed is a method for modifying a titanium nitride film wherein the specific resistance of a titanium nitride film is increased by irradiating the titanium nitride film formed on a semiconductor substrate with a plasma which is obtai...  
WO/2010/006000A1
Memory devices including a carbon-based resistivity-switchable material, and methods of forming such memory devices are provided, the methods including introducing a processing gas into a processing chamber, wherein the processing gas in...  
WO/2010/004705A1
Disclosed is a nonvolatile memory element comprising a first electrode (103), a second electrode (108), and a resistance change layer (107) that is interposed between the first electrode (103) and the second electrode (108) and undergoes...  
WO/2010/004675A1
Disclosed is a memory element (3) comprising: resistance change elements (1) which are arranged in matrix in a memory device, can change in the electric resistance value when an electric pulse having a positive or negative polarity is ap...  
WO/2009/157479A1
A switching element is provided with a variable resistance layer (13) containing an oxynitride, a first electrode (11) arranged in contact with the variable resistance layer (13), and a second electrode (12) which is arranged in contact ...  
WO/2009/153870A1
A phase-change memory element comprises a perovskite-type layer formed of a material having a perovskite-type structure and a phase-change recording material layer which is formed on the perovskite-type layer and which is energized via t...  
WO/2009/154266A1
Disclosed is a resistance change type nonvolatile memory that has an insulation film structure, is advantageous for the implementation of high integration, and achieves stable switching characteristics, and a manufacturing method therefo...  
WO/2009/150751A1
There is provided a switching element capable of high density integration and facilitating lamination. The switching element (100) includes: an insulating substrate (10), a first electrode (30) provided on the insulating substrate (10), ...  
WO/2009/150814A1
In a semiconductor device (100), an interlayer insulating layer (115) is formed on a topmost layer wiring (114), and contacts (116, 117) are formed through the interlayer insulating layer (115). A lower electrode (118a) of a variable re...  
WO/2009/147790A1
The non‑volatile storage element has a first electrode (103), a second electrode (105), and a variable resistance layer (104) that is provided between the first and second electrodes and can reversibly vary the inter‑electrode resist...  
WO/2009/142165A1
Disclosed is a semiconductor device including a field effect transistor comprising a diffusion layer and a resistance change element comprising a variable resistor layer. The semiconductor device comprises the variable resistor layer pro...  
WO/2009/141857A1
Provided is a resistance change nonvolatile memory device which enables the optimization of the size of a transistor of a memory cell. The resistance change nonvolatile memory device comprises a memory cell (300) constituted by connectin...  

Matches 701 - 750 out of 6,078