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Matches 751 - 800 out of 6,163

Document Document Title
WO/2010/038786A1
Disclosed is a memory element having low-power consumption. Also disclosed are a method for manufacturing the memory element and a memory device comprising the memory element. The memory element comprises a resistor that causes a change...  
WO/2010/036618A1
A metal-insulator diode is disclosed. In one aspect, the metal-insulator diode comprises a first electrode comprising a first metal, a first region comprising a first insulating material, a second region comprising a second insulating ma...  
WO/2010/036619A1
Forming a metal-insulator diode and carbon memory element in a single damascene process is disclosed. A trench having a bottom and a sidewall is formed in an insulator. A first diode electrode is formed in the trench during a single dama...  
WO/2010/036616A1
A metal-insulator diode is disclosed. In one aspect, the metal-insulator diode comprises first and second electrode and first and second insulators arranged as follows. An insulating region has a trench formed therein. The trench has a b...  
WO/2010/032470A1
Disclosed is a current suppressing element that can prevent the occurrence of write disturbance, can allow high current to flow into a resistance variable element, and can write data without any problem even when electric pulses having d...  
WO/2010/032468A1
Disclosed is a storage element provided with a resistance variable element (1) wherein an electrical resistance value of each of the storage elements (3) arranged in matrix in a storage device (21) changes when an electrical pulse having...  
WO/2010/029645A1
A nonvolatile storage device is provided with an electrode, and a storage layer which is connected to the electrode and permits resistance to change by a current applied from the electrode. The electrode is provided with a first layer an...  
WO/2010/029634A1
Provided is a resistance-varying element comprising a resistance-varying portion including a first resistance-varying layer caused to exhibit a plurality of states of different electric resistivities by at least one of an applied voltage...  
WO/2010/029607A1
An information recording/reproducing device is provided with a recording layer and a driving section. The recording layer has a first layer which contains a first compound. The first compound contains a mixed crystal of a first oxide con...  
WO/2010/026923A1
Disclosed is a storage element that can simultaneously satisfy the number of times of repetitive operations and low-voltage operating characteristics that are in a trade-off relationship. A high-resistivity layer (4) and an ion source l...  
WO/2010/026924A1
Disclosed is a storage element that can increase the number of times of repetitive operations and has an excellent balance between high-speed operating characteristics for writing and erasing and resistance value holding properties durin...  
WO/2010/024936A1
Phase change memory materials and more particularly GeAs telluride materials useful for phase change memory applications, for example, optical and electronic data storage are described.  
WO/2010/021134A1
A memory cell (300) is configured so that it is equipped with a semiconductor substrate (301); a variable resistance element (309) that consists of a lower electrode (309a), an upper electrode (309c), and a variable resistance layer (309...  
WO/2010/022097A1
In some aspects, a method of forming a carbon nano-tube (CNT) memory cell is provided that includes (1) forming a first conductor; (2) forming a steering element above the first conductor; (3) forming a first conducting layer above the f...  
WO/2010/022036A3
A method for fabricating a memory device includes depositing a phase-change and/or a resistive change material. The memory device is formed photolithographically using sixteen or fewer masks.  
WO/2010/012683A1
Memory device (100) comprising at least: an inert electrode (107) baced on an electrically conductive material; a portion (108) of at least one material having a higher resistivity than the material of the inert electrode, which portion ...  
WO/2010/010816A1
Disclosed is a method for modifying a titanium nitride film wherein the specific resistance of a titanium nitride film is increased by irradiating the titanium nitride film formed on a semiconductor substrate with a plasma which is obtai...  
WO/2010/006000A1
Memory devices including a carbon-based resistivity-switchable material, and methods of forming such memory devices are provided, the methods including introducing a processing gas into a processing chamber, wherein the processing gas in...  
WO/2010/004705A1
Disclosed is a nonvolatile memory element comprising a first electrode (103), a second electrode (108), and a resistance change layer (107) that is interposed between the first electrode (103) and the second electrode (108) and undergoes...  
WO/2010/004675A1
Disclosed is a memory element (3) comprising: resistance change elements (1) which are arranged in matrix in a memory device, can change in the electric resistance value when an electric pulse having a positive or negative polarity is ap...  
WO/2009/157479A1
A switching element is provided with a variable resistance layer (13) containing an oxynitride, a first electrode (11) arranged in contact with the variable resistance layer (13), and a second electrode (12) which is arranged in contact ...  
WO/2009/153870A1
A phase-change memory element comprises a perovskite-type layer formed of a material having a perovskite-type structure and a phase-change recording material layer which is formed on the perovskite-type layer and which is energized via t...  
WO/2009/154266A1
Disclosed is a resistance change type nonvolatile memory that has an insulation film structure, is advantageous for the implementation of high integration, and achieves stable switching characteristics, and a manufacturing method therefo...  
WO/2009/150751A1
There is provided a switching element capable of high density integration and facilitating lamination. The switching element (100) includes: an insulating substrate (10), a first electrode (30) provided on the insulating substrate (10), ...  
WO/2009/150814A1
In a semiconductor device (100), an interlayer insulating layer (115) is formed on a topmost layer wiring (114), and contacts (116, 117) are formed through the interlayer insulating layer (115). A lower electrode (118a) of a variable re...  
WO/2009/147790A1
The non‑volatile storage element has a first electrode (103), a second electrode (105), and a variable resistance layer (104) that is provided between the first and second electrodes and can reversibly vary the inter‑electrode resist...  
WO/2009/142165A1
Disclosed is a semiconductor device including a field effect transistor comprising a diffusion layer and a resistance change element comprising a variable resistor layer. The semiconductor device comprises the variable resistor layer pro...  
WO/2009/141857A1
Provided is a resistance change nonvolatile memory device which enables the optimization of the size of a transistor of a memory cell. The resistance change nonvolatile memory device comprises a memory cell (300) constituted by connectin...  
WO/2009/139185A1
A non-volatile semiconductor memory device having a crosspoint configuration which combines non-ohmic elements and a variable resistance layer is comprised of an interlayer insulating layer (16) formed on a substrate (11) which includes ...  
WO/2009/140305A1
An integrated circuit resistive switching component includes a resistive switching cell, including a correlated electron material (CEM) (90) between a bottom electrode (88) and a top electrode (92). The CEM includes a plurality of layers...  
WO/2009/140596A1
Methods of forming a microelectronic structure are provided, the microelectronic structure including a first conductor, a discontinuous film of metal nanoparticles disposed on a surface above the first conductor, a carbon nano-film forme...  
WO/2009/136467A1
Provided is a nonvolatile storage element including: a first electrode (503), a second electrode (505), and a resistance-variable layer (504) arranged between the first electrode and the second electrode. The resistance value between the...  
WO/2009/134989A2
Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precurso...  
WO/2009/134989A3
Precursors for use in depositing antimony-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precurso...  
WO/2009/130668A1
The present invention relates to a raultibit phase-change-material (PCM) memor cell (102), which has a series configuration of at least two PCM resistor elements (104, 106) coupled between read electrodes (108, 110). Each PCM resistor el...  
WO/2009/126492A1
A method of making a memory device includes forming a first conductive electrode (28), forming an insulating structure (13) over the first conductive electrode, forming a resistivity switching element (14) on a sidewall of the insulating...  
WO/2009/126489A1
A nonvolatile memory cell includes a steering element located in series with a storage element. The storage element includes a carbon material and the memory cell includes a rewritable cell having multiple memory levels.  
WO/2009/126846A1
In some aspects, a microelectronic structure is provided that includes a first conducting layer (108); a first dielectric layer (104) formed above the first conducting layer and having a feature (102) that exposes a portion of the first ...  
WO/2009/126493A1
A method of making a nonvolatile memory cell includes forming a steering element and forming a graphene storage element by coating a graphene containing colloid.  
WO/2009/125777A1
Disclosed is a resistance change element that is provided with a lower electrode formed upon a semiconductor or an insulator substrate, a resistance change material layer formed upon the lower electrode and composed mainly of transition ...  
WO/2009/122583A1
This invention provides a nonvolatile recording device characterized in that the nonvolatile recording device comprising a laminated structure comprising an electrode and a storage part, and a voltage application part for applying voltag...  
WO/2009/122347A2
A phase change memory cell has more than one memory region (14,18) each being a narrowed region of phase change memory material (2) extending between first and second electrodes (4,6). Each of the plurality of memory regions (14, 18) can...  
WO/2009/122349A2
A vertical phase change memory cell (2) has an active region (24) of phase change memory material defined either by providing a contact extending only over part of the phase change memory material or an insulating layer exposing only par...  
WO/2009/122349A3
A vertical phase change memory cell (2) has an active region (24) of phase change memory material defined either by providing a contact extending only over part of the phase change memory material or an insulating layer exposing only par...  
WO/2009/122582A1
This invention provides a nonvolatile recording device characterized in that the nonvolatile recording device comprising a laminated structure comprising an electrode and a storage part, and a voltage application part for applying voltag...  
WO/2009/122601A1
A nonvolatile memory device is characterized by comprising first electrode extending in a first direction, a first interelectrode insulating layer provided between the first electrodes, second electrodes extending in a second direction t...  
WO/2009/122570A1
This invention provides an information recording/reproducing device comprising a first layer, a second layer, and a recording layer held between the first layer and the second layer. The information recording/reproducing device is charac...  
WO/2009/122347A3
A phase change memory cell has more than one memory region (14,18) each being a narrowed region of phase change memory material (2) extending between first and second electrodes (4,6). Each of the plurality of memory regions (14, 18) can...  
WO/2009/119533A1
Provided is a semiconductor storage device which can simultaneously realize the high reliability and the cell area reduction. A selection electrode (106) is formed to sandwich a p-type semiconductor region (102) and an insulating film (1...  
WO/2009/118926A1
A nonvolatile storage device is provided with a substrate; a first electrode which extends in a first direction on the substrate; a second electrode which extends in a second direction intersecting the first direction and is arranged on ...  

Matches 751 - 800 out of 6,163