Login| Sign Up| Help| Contact|

Patent Searching and Data


Matches 201 - 250 out of 6,078

Document Document Title
WO/2017/074580A1
Methods for improving the operation of a memory array by arranging a Metal-Insulator-Metal (MIM) structure between a word line and an adjustable resistance bit line structure are described. The MIM structure may correspond with a metal/R...  
WO/2017/069772A1
In one example in accordance with the present disclosure an electrostatic discharge protection system is described. The system includes a number of electrostatic discharge absorption units coupled in parallel. An electrostatic discharge ...  
WO/2017/067314A1
A phase change material for a phase change memory and a preparation method therefor. A general chemical formula of the phase change material for a phase change memory is Sc100 - x-y-zGexSbyTez, 0≤x≤60, 0≤y≤90, 0≤z≤65, and 0...  
WO/2017/062786A1
A method for forming an electronic device may comprising the steps of selecting a substrate for an electronic device, and depositing a porous film utilizing physical vapor deposition, dry deposition, evaporative deposition, e-beam evapor...  
WO/2017/058300A1
A memory cell is provided that includes a vertically-oriented adjustable resistance structure including a control terminal coupled to a word line, and a reversible resistance-switching element coupled in series with and disposed above or...  
WO/2017/057046A1
The present art relates to a semiconductor device capable of improving yield. A volatile logic circuit of the present invention has a storage node, and stores inputted information. A plurality of nonvolatile elements are connected to the...  
WO/2017/051527A1
The purpose of the present invention is to enable manufacture of a metal-precipitating resistance changing element in which variations in program voltage and high-resistance-state leak current are decreased while decreasing the program v...  
WO/2017/042587A1
The present techniques generally relate to correlated electron switches that are capable of asymmetric set or reset operations.  
WO/2017/038095A1
The purpose of the present invention is to provide a method for efficiently performing characterization of a programmable logic integrated circuit having a crossbar switch involving the use of a resistance change element, in order to per...  
WO/2017/039982A1
Thermally-regulated electronic devices, structures, and systems having incorporated high thermal conductivity dielectric (HTCD) materials are disclosed and described, including associated methods.  
WO/2017/034741A1
A method of fabrication of a device includes forming a first electrode (158) and a second electrode (162). The method further includes forming a resistive material (160) between the first electrode and the second electrode to form a resi...  
WO/2017/025760A1
The present techniques generally relate to apparatus and methods for providing programmable currents for correlated electron switches.  
WO/2017/027175A1
Some embodiments include a memory cell having a pair of electrodes, and a plurality of switching levels between the electrodes. Each switching level has an ion buffer region and a dielectric region. At least one switching level differs f...  
WO/2017/021721A1
Subject matter disclosed herein relates to correlated electron switches.  
WO/2017/018933A1
A sensor element for sensing optical light may be provided. The sensor element may include a first electrode for electrically coupling to a first supply voltage, a second electrode for electrically coupling to a second supply voltage, an...  
WO/2017/019242A1
An array of cross point memory cells comprises spaced first lines which cross spaced second lines. Two memory cells are individually between one of two immediately adjacent of the second lines and a same single one of the first lines.  
WO/2017/019346A1
A method of forming an array of cross point memory cells comprises forming spaced conductive lower electrode pillars for individual of the memory cells being formed along and elevationally over spaced lower first lines. Walls cross eleva...  
WO/2017/007563A1
A three-dimensional (3D) non-volatile memory array having a silicide bit line and method of fabricating is disclosed. The fabrication technique may comprise forming a metal silicide for at least a portion (546a, 546b) of the bit line (53...  
WO/2017/003959A1
The present disclosure provides a system and method for forming a resistive random access memory (RRAM) device. A RRAM device consistent with the present disclosure includes a substrate and a first electrode disposed thereon. The RRAM de...  
WO/2016/209525A3
A power combining arrangement includes an input divider waveguide and an output combiner waveguide, and a first and second amplifier. The power combining arrangement is configured to amplify RF energy having a characteristic wavelength ...  
WO/2016/203751A1
Provided is a rectifying element wherein current-voltage characteristics are improved. The rectifying element has: a first electrode and a second electrode; a rectifying layer that is provided between the first electrode and the second e...  
WO/2016/199556A1
Provided is a memory device having a structure suitable for higher integration while ensuring ease of manufacture. The memory device is provided with n memory cell units which are layered on a substrate successively from a first memory c...  
WO/2016/199412A1
In order to improve the number rewrites by improving the dielectric breakdown resistance of an ion conducting layer in a variable resistance element, this variable resistance element is provided with: a first electrode that contains at l...  
WO/2016/195763A1
A variable resistance memory device (100, 200, 300, 400) includes a first electrode (110, 210, 310) and a second electrode (160, 260, 360). The device may includes a chalcogenide glass (140, 240, 340) layer between the first electrode an...  
WO/2016/181609A1
Disclosed is a semiconductor storage device (1000) wherein: a first selection line (108) and a second selection line (109) are provided; a first storage element (100) of a plurality of storage elements has a first upper electrode (101) a...  
WO/2016/162053A1
A memristor function based on an orthogonal electrode is disclosed. One example is a memristor device with a plurality of electrodes (108, 110, 112, 114), including a first group of electrodes (108, 110), a second group of electrodes (11...  
WO/2016/163120A1
In the cases of performing programming by forming a two-terminal-type variable resistance element on a semiconductor device, it has been difficult to control the programming, and malfunctions have often occurred. This switching element i...  
WO/2016/158430A1
A switch element according to one embodiment of the present technique is provided with: a first electrode; a second electrode that is arranged to face the first electrode; and a switch layer that is arranged between the first electrode a...  
WO/2016/160223A1
Phase change memory cells, structures, and devices having a phase change material and an electrode forming an ohmic contact therewith are disclosed and described. Such electrodes can have a resistivity of from 10 to 100 mOhm•cm.  
WO/2016/157820A1
Provided is a switching element in which it is made possible to improve ON-state retention performance and reduce OFF-state leak current. This switching element has a first electrode, a second electrode, and a resistance change layer pro...  
WO/2016/157334A1
In this semiconductor storage device, which is formed by film-forming a phase changing material layer on a channel semiconductor layer of a transistor, and which needs to flow a current between the channel semiconductor layer and the pha...  
WO/2016/160277A1
Phase change material can be set with a multistage set process. Set control logic can heat a phase change semiconductor material (PM) to a first temperature for a first period of time. The first temperature is configured to promote nucle...  
WO/2016/158429A1
A switch element according to one embodiment of the present technique is provided with: a first electrode; a second electrode that is arranged to face the first electrode; and a switch layer that is arranged between the first electrode a...  
WO/2016/153461A1
In the examples provided herein, a memristive device is disclosed that has a first electrode, a second electrode, and a doped sol-gel switching layer sandwiched between the first electrode and the second electrode. The doped sol-gel swit...  
WO/2016/144960A1
A process for forming a resistive random-access memory device, the process comprising the steps of: depositing a first electrode on a substrate; forming a porous resistive memory material layer on the first electrode, wherein the porous ...  
WO/2016/129306A1
This selective element is provided with: a first electrode and a second electrode that is arranged so as to face the first electrode; a switch element that is provided between the first electrode and the second electrode; and a nonlinear...  
WO/2016/123881A1
A nonvolatile resistive memory, comprising an inert metal electrode (15), a resistive functional layer (14), and an easily oxidizable metal electrode (12), and characterized in that: inserted between the easily oxidizable metal electrode...  
WO/2016/126834A1
Providing for a two-terminal memory cell having intrinsic current limiting characteristic is described herein. By way of example, the two-terminal memory cell can comprise a particle donor layer having a moderate resistivity, comprised o...  
WO/2016/123882A1
A nonvolatile resistive memory, comprising an inert metal electrode (12), a resistive functional layer (14), and an easily oxidizable metal electrode (15), and characterized in that: inserted between the inert metal electrode (12) and th...  
WO/2016/126307A1
A memory device, such as a ReRAM device includes plural interdigitated word lines (112, 116) and a single select transistor (110a) controlling plural vertical local bit lines (122a). The interdigitated word lines may be word line combs c...  
WO/2016/124969A3
All-printed paper-based substrate memory devices are described which can be prepared by a process that includes coating, using a screen printer, one or more areas of a paper substrate (102) with a conductor material (104), such as a carb...  
WO/2016/122406A1
Embodiments provide a selector device for selecting a memory cell. The selector device includes a first electrode; a second electrode; and a switching layer sandwiched between the first electrode and the second electrode. The switching l...  
WO/2016/123088A1
A sensing apparatus includes a light source to transmit a light beam, an input switch, a first sensing element, a second sensing element, and a detector. The input switch receives the light beam and includes a phase change material havin...  
WO/2016/122445A1
A resistive memory array includes a plurality of resistive memory devices. A sneak path current in the resistive memory array is reduced when a negative temperature coefficient of resistance material is incorporated in series with a nega...  
WO/2016/117225A1
A memory cell is provided with: an antifuse inserted into each of a plurality of paths, said paths being connected to each other at one end thereof; a resistive element that is inserted into at least one of the plurality of paths; and a ...  
WO/2016/114311A1
The forming voltage of a resistance change element used in a non-volatile memory and the like is decreased, and repetition characteristics are improved. In an element structure in which a metal oxide film 12 is sandwiched between a lower...  
WO/2016/111306A1
This semiconductor device comprises an active layer that is formed of an oxide magnetic material and a porous dielectric body that contains water and is provided on the active layer. By using hydrogen and oxygen which are formed by elect...  
WO/2016/105673A1
A memory device (and method of making and using the memory device) includes a first electrode of conductive material, a second electrode of conductive material, and a layer transition metal oxide material that includes first and second e...  
WO/2016/101246A1
A self-gating resistance random access memory unit and a manufacturing method therefor, which relate to the technical field of memories. The self-gating resistance random access memory unit comprises: a stack structure, comprising multip...  
WO/2016/101247A1
Disclosed a three-terminal atom switch device and a manufacturing method therefor. The three-terminal atom switch device comprises a stacking structure comprising a source end (301) and a drain end (302), a vertical groove formed by etch...  

Matches 201 - 250 out of 6,078