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WO/2016/105750A1 |
Embodiments of the present disclosure describe phase-change memory cell implant for dummy array leakage reduction. In an embodiment, an apparatus includes a plurality of phase-change memory (PCM) elements, wherein individual PCM elements...
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WO/2016/097252A1 |
A resistive switching memory cell (100) comprises a stack of a first electrode (110), a first inner region (120), a second inner region (130), and a second electrode (140). The first inner region (120) comprises one or more metal oxide l...
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WO/2016/099580A3 |
An integrated circuit which enables lower cost yet provides superior performance compared to standard silicon integrated circuits by utilizing thin film transistors (TFTs) fabricated in BEOL. Improved memory circuits are enabled by utili...
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WO/2016/094223A1 |
Provided are resistive random access memory (ReRAM) cells with embedded resistors and methods of fabricating these cells. An embedded resistor may include a metal silicon nitride of a first metal and may be doped with a second metal, whi...
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WO/2016/094233A1 |
Provided are memory cells, such as resistive random access memory (ReRAM) cells, and methods of fabricating such cells. A cell includes an embedded resistor and resistive switching layer connected in series within the embedded resistor. ...
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WO/2016/092374A1 |
All-printed paper-based substrate memory devices are described which can be prepared by a process that includes coating, using a screen printer, one or more areas of a paper substrate (102) with a conductor material (104), such as a carb...
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WO/2016/094010A1 |
A resistive switching memory comprising a first electrode and a second electrode; an active resistive switching region between the first electrode and the second electrode, the resistive switching region comprising a transition metal oxi...
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WO/2016/089542A1 |
Embodiments of the present disclosure describe barrier film techniques and configurations for phase-change memory elements. In an embodiment, an apparatus includes a plurality of phase-change memory (PCM) elements, wherein individual PCM...
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WO/2016/086179A1 |
The proposed method of forming a resistive memory cell, preferably for CBRAM or ReRAM arrays, includes forming a conductive layer, oxidizing an exposed area and removing a region of the conductive layer proximate the oxidized region (110...
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WO/2016/085590A1 |
Embodiments of the present disclosure describe electrode configurations to increase electro-thermal isolation of phase-change memory elements and associated techniques. In an embodiment, an apparatus includes a plurality of phase-change ...
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WO/2016/084349A1 |
The objective of the present invention is to make it possible to manufacture, with a high yield, a metal deposition type variable-resistance element with which variability in a leakage current under a program voltage and a high resistanc...
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WO/2016/080146A1 |
This semiconductor device is provided with: a flip flop circuit which has an annular structure wherein a first inverter circuit, a first connection line comprising a first node, a second inverter circuit, and a second connection line com...
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WO/2016/073152A1 |
A cross-point memory array includes a plurality of variable resistance memory cell pillars. Adjacent memory cell pillars are separated by a partially filled gap that includes a buried void. In addition, adjacent memory cell pillars inclu...
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WO/2016/062613A1 |
The invention relates to a method for manufacturing a resistive device, comprising the following steps: depositing a first electrically conductive layer on a substrate; forming an engraving mask on the first conductive layer; engraving t...
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WO/2016/060973A1 |
The present disclosure includes select devices and methods of using select device for memory cell applications. An example select device includes a first electrode having a particular geometry, a semiconductor material formed on the firs...
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WO/2016/059941A1 |
This electronic device is provided with a substrate, a channel section, a first electrode, a second electrode, and a shape change generating section. The channel section is provided on the substrate, and contains a phase transition mater...
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WO/2016/057508A1 |
A memory element can include a first electrode; at least one switching layer formed over the first electrode; a second electrode layer; and at least one conductive cap layer formed over the second electrode layer having substantially no ...
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WO/2016/056352A1 |
The present invention is a niobium oxide sintered compact characterized by having the composition NbOx (2 < x < 2.5). The present invention provides a niobium oxide sintered compact which can be applied as a sputtering target for forming...
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WO/2016/052097A1 |
This switch element is provided with a first electrode, a second electrode disposed opposite the first electrode, and a switch layer provided between the first electrode and the second electrode, the switch layer comprising an amorpho...
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WO/2016/048701A1 |
Devices and systems having a diffusion barrier (408) for limiting diffusion of a phase change material including an electrode (402, 404), a phase change material (406) electrically coupled to the electrode, and a carbon and TiN (C:TiN) d...
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WO/2016/048681A1 |
Methods and apparatuses, wherein the method includes providing a logic device. The method substantially surrounds a metal gate with a transition metal oxide on at least one side, wherein the transition metal oxide is comprised of hafnium...
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WO/2016/047254A1 |
In the memory cell unit array according to the present invention, memory cell units 10, composed of first wiring 31, second wiring and a non-volatile memory cell, are arranged in the form of a two-dimensional matrix in a first direction ...
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WO/2016/042750A1 |
A purpose of the invention is to provide a crossbar switch for reducing the layout areas of a crossbar switch and peripheral circuits thereof. A crossbar switch of the invention comprises: a plurality of first wires extending in a first ...
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WO/2016/043657A1 |
According to various embodiments, there is provided a memory structure including a conductive core; and a switching material layer at least partially surrounding the conductive core, wherein the switching material layer includes a plural...
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WO/2016/039694A1 |
Various embodiments provide a memory cell including a memory layer having a first surface and a second surface opposite to the first surface. The memory layer includes a material configured to provide variable resistances. The memory cel...
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WO/2016/038991A1 |
According to an embodiment of the present invention, a memory device includes first to third layers. The first layer includes a plurality of first wiring lines, and a first insulating portion. The first wiring lines extend in a first dir...
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WO/2016/039974A1 |
The disclosure concerns a phase-change material switch (50). The switch includes a first terminal (52) that receives an input signal and a second terminal (54). The switch includes an actuation portion (60, 64, 66) that receives a contro...
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WO/2016/040792A1 |
Systems, methods, and apparatus are provided for tuning a memristive property of a device. The device (500) includes a layer of a dielectric material (507) disposed over and forming an interface with a layer of an electrically conductive...
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WO/2016/018313A1 |
According to an example, an apparatus may include an input line, an output line, and a memory cell connected between the input line and the output line. The memory cell may include a memristor connected in series with a selector. The app...
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WO/2016/010325A1 |
The present invention relates to a multi-magnetic card and a method for manufacturing a magnetic cell. The multi-magnetic card, according to one embodiment of the present invention, comprises: a plate; and a magnetic field-generating por...
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WO/2016/010324A1 |
The present invention relates to a multi-magnetic card. The multi-magnetic card, according to one embodiment of the present invention, comprises: a plate; a magnetic field-generating portion including a magnetic cell, which forms a magne...
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WO/2016/009472A1 |
The present invention addresses the problem of providing a phase change memory cell requiring little electric current and electric power to rewrite data. Additionally, the present invention addresses the problem of providing a phase chan...
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WO/2016/003865A1 |
The present disclosure includes memory cells and methods of forming the same. The memory cells disclosed herein can include a first selecting chalcogenide material, a second selecting chalcogenide material, and a storage material.
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WO/2015/198573A1 |
Provided are a semiconductor device and a method of manufacturing the semiconductor device which enable a hard copy of a reconstruction circuit, which employs a resistance change element, to be formed at low cost. The method of manufactu...
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WO/2015/196412A1 |
A metal doped Ge-Sb-Te-based multivalue storage phase-change material, represented by general formula MX(GeaSbbTec)1-X, wherein M is a doping metal element, M is at least one of Cu, Ag and Zn, x represents the atom number percentage of M...
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WO/2015/186164A1 |
A semiconductor storage device includes: a semiconductor substrate; a first storage unit; a second storage unit made up of a plurality of first storage units formed in a first direction parallel to the semiconductor substrate; a third st...
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WO/2015/182074A1 |
The semiconductor device according to the present invention has an upper electrode, a first lower layer wiring that also functions as a lower electrode, an electrical resistance-changing film interposed between the upper electrode and th...
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WO/2015/177972A1 |
Various embodiments of the present invention are directed to a method for passivating a metal line (300, 301, 302, 310), e.g. a memory cell and a source line of a CBRAM, prior to removing a masking layer (106) in order to prevent oxidati...
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WO/2015/177971A1 |
Exemplary embodiments of the present invention are directed towards a method for fabricating a semiconductor memory device comprising selectively depositing a material to form a cap (300) above a recessed cell structure (202) in order to...
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WO/2015/169142A1 |
A multi-valued phase change storage unit comprises phase change material layers (104, 105), heating electrodes (103, 106), a top electrode (101), a bottom electrode (107) and a thermal insulation material layer (102). The phase change ma...
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WO/2015/167357A1 |
A device is disclosed which comprises a first electrode (101), a second electrode (104) spaced from the first electrode, a switching region (102) positioned between the first electrode and the second electrode, and an intermediate region...
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WO/2015/165088A1 |
A phase change memory comprises a storage node. The storage node comprises: a lower electrode (1), used for being connected to a substrate; a first phase-change layer (2), located on the lower electrode; a second phase-change layer (2), ...
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WO/2015/167351A1 |
A device is disclosed which comprises a first electrode (101) and a second electrode (104) spaced from the first electrode, a switching region (102) positioned between the first electrode and the second electrode, and an intermediate reg...
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WO/2015/146311A1 |
An Al-Te-Cu-Zr alloy sputtering target characterized by comprising 20 to 40 at% of Te, 5 to 20 at% of Cu, 5 to 15 at% of Zr and a remainder made up by Al, wherein a Te phase, a Cu phase and a CuTe phase do not exist in the target structu...
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WO/2015/145746A1 |
Provided are a method for vapor-phase growth of a phase-change thin film, and a device for vapor-phase growth of a phase-change thin film, with which a phase-change thin film is formed at low temperature while retained in an amorphous...
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WO/2015/137256A1 |
Provided is a transistor equipped with: a piezoresistor (10) through which a carrier is conducted; a source (14) which injects the carrier into the piezoresistor; a drain (16) which receives the carrier from the piezoresistor; a piezoele...
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WO/2015/139033A1 |
Systems, methods, and apparatus are provided for tuning a functional property of a device. The device (210) includes a layer of a dielectric material (214) disposed over and forming an interface (216) with a layer of an electrically cond...
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WO/2015/139033A8 |
Systems, methods, and apparatus are provided for tuning a functional property of a device. The device (210) includes a layer of a dielectric material (214) disposed over and forming an interface (216) with a layer of an electrically cond...
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WO/2015/133073A1 |
Provided is a nonvolatile switching element which has high retention ability even if programmed at a low current, while being suppressed in dielectric breakdown of a variable resistance layer during a reset operation. This switching elem...
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WO/2015/129413A1 |
In this method of oxidizing treatment of a transition metal film for oxidizing a film containing a transition metal on the surface of an object to be treated, plasma of gas containing at least oxygen is generated, electrons are donate...
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