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Matches 301 - 350 out of 6,246

Document Document Title
WO/2016/129306A1
This selective element is provided with: a first electrode and a second electrode that is arranged so as to face the first electrode; a switch element that is provided between the first electrode and the second electrode; and a nonlinear...  
WO/2016/123881A1
A nonvolatile resistive memory, comprising an inert metal electrode (15), a resistive functional layer (14), and an easily oxidizable metal electrode (12), and characterized in that: inserted between the easily oxidizable metal electrode...  
WO/2016/126834A1
Providing for a two-terminal memory cell having intrinsic current limiting characteristic is described herein. By way of example, the two-terminal memory cell can comprise a particle donor layer having a moderate resistivity, comprised o...  
WO/2016/123882A1
A nonvolatile resistive memory, comprising an inert metal electrode (12), a resistive functional layer (14), and an easily oxidizable metal electrode (15), and characterized in that: inserted between the inert metal electrode (12) and th...  
WO/2016/126307A1
A memory device, such as a ReRAM device includes plural interdigitated word lines (112, 116) and a single select transistor (110a) controlling plural vertical local bit lines (122a). The interdigitated word lines may be word line combs c...  
WO/2016/122406A1
Embodiments provide a selector device for selecting a memory cell. The selector device includes a first electrode; a second electrode; and a switching layer sandwiched between the first electrode and the second electrode. The switching l...  
WO/2016/123088A1
A sensing apparatus includes a light source to transmit a light beam, an input switch, a first sensing element, a second sensing element, and a detector. The input switch receives the light beam and includes a phase change material havin...  
WO/2016/122445A1
A resistive memory array includes a plurality of resistive memory devices. A sneak path current in the resistive memory array is reduced when a negative temperature coefficient of resistance material is incorporated in series with a nega...  
WO/2016/117225A1
A memory cell is provided with: an antifuse inserted into each of a plurality of paths, said paths being connected to each other at one end thereof; a resistive element that is inserted into at least one of the plurality of paths; and a ...  
WO/2016/114311A1
The forming voltage of a resistance change element used in a non-volatile memory and the like is decreased, and repetition characteristics are improved. In an element structure in which a metal oxide film 12 is sandwiched between a lower...  
WO/2016/111306A1
This semiconductor device comprises an active layer that is formed of an oxide magnetic material and a porous dielectric body that contains water and is provided on the active layer. By using hydrogen and oxygen which are formed by elect...  
WO/2016/105673A1
A memory device (and method of making and using the memory device) includes a first electrode of conductive material, a second electrode of conductive material, and a layer transition metal oxide material that includes first and second e...  
WO/2016/101246A1
A self-gating resistance random access memory unit and a manufacturing method therefor, which relate to the technical field of memories. The self-gating resistance random access memory unit comprises: a stack structure, comprising multip...  
WO/2016/101247A1
Disclosed a three-terminal atom switch device and a manufacturing method therefor. The three-terminal atom switch device comprises a stacking structure comprising a source end (301) and a drain end (302), a vertical groove formed by etch...  
WO/2016/105750A1
Embodiments of the present disclosure describe phase-change memory cell implant for dummy array leakage reduction. In an embodiment, an apparatus includes a plurality of phase-change memory (PCM) elements, wherein individual PCM elements...  
WO/2016/097252A1
A resistive switching memory cell (100) comprises a stack of a first electrode (110), a first inner region (120), a second inner region (130), and a second electrode (140). The first inner region (120) comprises one or more metal oxide l...  
WO/2016/094223A1
Provided are resistive random access memory (ReRAM) cells with embedded resistors and methods of fabricating these cells. An embedded resistor may include a metal silicon nitride of a first metal and may be doped with a second metal, whi...  
WO/2016/094233A1
Provided are memory cells, such as resistive random access memory (ReRAM) cells, and methods of fabricating such cells. A cell includes an embedded resistor and resistive switching layer connected in series within the embedded resistor. ...  
WO/2016/092374A1
All-printed paper-based substrate memory devices are described which can be prepared by a process that includes coating, using a screen printer, one or more areas of a paper substrate (102) with a conductor material (104), such as a carb...  
WO/2016/094010A1
A resistive switching memory comprising a first electrode and a second electrode; an active resistive switching region between the first electrode and the second electrode, the resistive switching region comprising a transition metal oxi...  
WO/2016/089542A1
Embodiments of the present disclosure describe barrier film techniques and configurations for phase-change memory elements. In an embodiment, an apparatus includes a plurality of phase-change memory (PCM) elements, wherein individual PCM...  
WO/2016/086179A1
The proposed method of forming a resistive memory cell, preferably for CBRAM or ReRAM arrays, includes forming a conductive layer, oxidizing an exposed area and removing a region of the conductive layer proximate the oxidized region (110...  
WO/2016/085590A1
Embodiments of the present disclosure describe electrode configurations to increase electro-thermal isolation of phase-change memory elements and associated techniques. In an embodiment, an apparatus includes a plurality of phase-change ...  
WO/2016/084349A1
The objective of the present invention is to make it possible to manufacture, with a high yield, a metal deposition type variable-resistance element with which variability in a leakage current under a program voltage and a high resistanc...  
WO/2016/080146A1
This semiconductor device is provided with: a flip flop circuit which has an annular structure wherein a first inverter circuit, a first connection line comprising a first node, a second inverter circuit, and a second connection line com...  
WO/2016/073152A1
A cross-point memory array includes a plurality of variable resistance memory cell pillars. Adjacent memory cell pillars are separated by a partially filled gap that includes a buried void. In addition, adjacent memory cell pillars inclu...  
WO/2016/062613A1
The invention relates to a method for manufacturing a resistive device, comprising the following steps: depositing a first electrically conductive layer on a substrate; forming an engraving mask on the first conductive layer; engraving t...  
WO/2016/060973A1
The present disclosure includes select devices and methods of using select device for memory cell applications. An example select device includes a first electrode having a particular geometry, a semiconductor material formed on the firs...  
WO/2016/059941A1
This electronic device is provided with a substrate, a channel section, a first electrode, a second electrode, and a shape change generating section. The channel section is provided on the substrate, and contains a phase transition mater...  
WO/2016/057508A1
A memory element can include a first electrode; at least one switching layer formed over the first electrode; a second electrode layer; and at least one conductive cap layer formed over the second electrode layer having substantially no ...  
WO/2016/056352A1
The present invention is a niobium oxide sintered compact characterized by having the composition NbOx (2 < x < 2.5). The present invention provides a niobium oxide sintered compact which can be applied as a sputtering target for forming...  
WO/2016/052097A1
 This switch element is provided with a first electrode, a second electrode disposed opposite the first electrode, and a switch layer provided between the first electrode and the second electrode, the switch layer comprising an amorpho...  
WO/2016/048701A1
Devices and systems having a diffusion barrier (408) for limiting diffusion of a phase change material including an electrode (402, 404), a phase change material (406) electrically coupled to the electrode, and a carbon and TiN (C:TiN) d...  
WO/2016/048681A1
Methods and apparatuses, wherein the method includes providing a logic device. The method substantially surrounds a metal gate with a transition metal oxide on at least one side, wherein the transition metal oxide is comprised of hafnium...  
WO/2016/047254A1
In the memory cell unit array according to the present invention, memory cell units 10, composed of first wiring 31, second wiring and a non-volatile memory cell, are arranged in the form of a two-dimensional matrix in a first direction ...  
WO/2016/042750A1
A purpose of the invention is to provide a crossbar switch for reducing the layout areas of a crossbar switch and peripheral circuits thereof. A crossbar switch of the invention comprises: a plurality of first wires extending in a first ...  
WO/2016/043657A1
According to various embodiments, there is provided a memory structure including a conductive core; and a switching material layer at least partially surrounding the conductive core, wherein the switching material layer includes a plural...  
WO/2016/039694A1
Various embodiments provide a memory cell including a memory layer having a first surface and a second surface opposite to the first surface. The memory layer includes a material configured to provide variable resistances. The memory cel...  
WO/2016/038991A1
According to an embodiment of the present invention, a memory device includes first to third layers. The first layer includes a plurality of first wiring lines, and a first insulating portion. The first wiring lines extend in a first dir...  
WO/2016/039974A1
The disclosure concerns a phase-change material switch (50). The switch includes a first terminal (52) that receives an input signal and a second terminal (54). The switch includes an actuation portion (60, 64, 66) that receives a contro...  
WO/2016/040792A1
Systems, methods, and apparatus are provided for tuning a memristive property of a device. The device (500) includes a layer of a dielectric material (507) disposed over and forming an interface with a layer of an electrically conductive...  
WO/2016/018313A1
According to an example, an apparatus may include an input line, an output line, and a memory cell connected between the input line and the output line. The memory cell may include a memristor connected in series with a selector. The app...  
WO/2016/010325A1
The present invention relates to a multi-magnetic card and a method for manufacturing a magnetic cell. The multi-magnetic card, according to one embodiment of the present invention, comprises: a plate; and a magnetic field-generating por...  
WO/2016/010324A1
The present invention relates to a multi-magnetic card. The multi-magnetic card, according to one embodiment of the present invention, comprises: a plate; a magnetic field-generating portion including a magnetic cell, which forms a magne...  
WO/2016/009472A1
The present invention addresses the problem of providing a phase change memory cell requiring little electric current and electric power to rewrite data. Additionally, the present invention addresses the problem of providing a phase chan...  
WO/2016/003865A1
The present disclosure includes memory cells and methods of forming the same. The memory cells disclosed herein can include a first selecting chalcogenide material, a second selecting chalcogenide material, and a storage material.  
WO/2015/198573A1
Provided are a semiconductor device and a method of manufacturing the semiconductor device which enable a hard copy of a reconstruction circuit, which employs a resistance change element, to be formed at low cost. The method of manufactu...  
WO/2015/196412A1
A metal doped Ge-Sb-Te-based multivalue storage phase-change material, represented by general formula MX(GeaSbbTec)1-X, wherein M is a doping metal element, M is at least one of Cu, Ag and Zn, x represents the atom number percentage of M...  
WO/2015/139033A8
Systems, methods, and apparatus are provided for tuning a functional property of a device. The device (210) includes a layer of a dielectric material (214) disposed over and forming an interface (216) with a layer of an electrically cond...  
WO/2015/186164A1
A semiconductor storage device includes: a semiconductor substrate; a first storage unit; a second storage unit made up of a plurality of first storage units formed in a first direction parallel to the semiconductor substrate; a third st...  

Matches 301 - 350 out of 6,246