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Matches 401 - 450 out of 6,156

Document Document Title
WO/2014/040356A1
Provided are a phase change memory location for replacing DRAM and FLASH and a manufacturing method therefor, comprising a phase change material layer and a cylindrical lower electrode in contact therewith and located thereunder, and cha...  
WO/2014/040359A1
A high-speed, high-density, low-power consumption, phase-change memory unit and a manufacturing method therefor. First, a transitional material layer (5) having an accommodation space is manufactured on the surface of a structure of a fi...  
WO/2014/043109A1
Techniques for producing a single-crystal phase change material and the incorporation of those techniques in an electronic device fabrication process flow are provided. In one aspect, a method of fabricating an electronic device is provi...  
WO/2014/040358A1
Provided in the present invention are a TiSiN material layer-containing phase-change memory unit and a manufacturing method therefor. The phase-change memory unit comprises a phase-change material layer and a lower electrode arranged the...  
WO/2014/040357A1
An antimony-rich high-speed phase-change material for use in a phase-change memory device, a manufacturing method for the material, and an application thereof. The antimony-rich high-speed phase-change material for use in the phase-chang...  
WO/2014/038152A1
Provided is a variable resistance element (1) equipped with: a first electrode (3); a second electrode (6); a first metal oxide layer (51) disposed between the first electrode and the second electrode and having a first resistivity; a se...  
WO/2014/036837A1
Provided are a resistive random access memory having a leakage-restraining feature, and a manufacturing method thereof. The resistive random access memory can restrain Sneak current in a cross-shaped array of a large-sale RRAM. A memory ...  
WO/2014/034420A1
Provided is a resistance change memory element (20A) that includes: a resistance change insulating film (8); a source electrode (17A) arranged on a first principal surface of the resistance change insulating film; a drain electrode (18A)...  
WO/2014/030393A1
The present invention provides a highly reliable resistance changing element while maintaining a low parasitic capacitance of the wiring when the resistance changing element is provided in the wiring layer on a semiconductor substrate. I...  
WO/2014/020478A3
A bipolar resistive switching device comprises a bottom electrode, a stack of at least two transition metal oxides layers, the stack including at least one oxygen gettering layer, and a top electrode. A particular configuration is Pt/TaO...  
WO/2014/021972A2
A ZnO based display pixel structure that includes system-on-glass (SOG) substrates with embedded non-volatile resistive random access memory iNV-RRAM) is provided. Such pixels feature high.frame rates and low power consumption. The entir...  
WO/2014/020478A2
A bipolar resistive switching device (RSM device, figure 35) comprises an electrically conductive bottom electrode (BE, figure 35); a stack of transition metal oxides layers (RSM, figure 35), a number of transition metal oxide layers (RS...  
WO/2014/013214A1
An alkyltelluroether precursor for use in the single source chemical vapour deposition of a metal telluride, which alkyltelluroether precursor comprises an alkyltelluroether ligand bonded to a metal halide, which alkyltelluroether precur...  
WO/2014/002656A1
Provided is a programming circuit for writing data to a variable-resistance nonvolatile element. The programming circuit is provided with a load capacity between a ground potential and a ground-side terminal of a variable-resistance nonv...  
WO/2013/192216A3
A three-dimensional memory is formed as an array of memory elements across multiple layers positioned at different distances above a semiconductor substrate. Cylindrical stacks of memory elements are formed where a cylindrical opening ha...  
WO/2013/190741A1
This semiconductor device is provided with: a variable resistance first switch (103), which has a first terminal and a second terminal, and which has the resistance value thereof varied when an applied voltage exceeds a reference value; ...  
WO/2013/190988A1
The present invention provides a non-volatile switching element that can be applied to a programmable-logic wiring changeover switch and in which an electrochemical reaction is used. Of the two electrodes for applying a bias voltage to t...  
WO/2013/188563A1
In a 3D nonvolatile memory with memory elements arranged in a three-dimensional pattern defined by rectangular coordinates having x, y and z-directions and with a plurality of parallel planes from a bottom plane to a top plane stacked in...  
WO/2013/183101A1
The purpose of the present invention is to provide a semiconductor storage device, which has small resistance in the ON state, and a small leak current in the OFF state, and which has a small-sized selection transistor used therein. In t...  
WO/2013/183132A1
Provided is an electrode structure such that, when layering insulating resin and a metal electrode that have different thermal expansion coefficients, generation of cracks on the metal electrode due to heating during manufacturing proces...  
WO/2013/183242A1
During a period of time shorter than the period of time required for flipping all polarizations included in a ferroelectric film (13), pulse voltages V1 and V2 are applied to a first upper gate electrode (17a) and a second upper gate ele...  
WO/2013/173140A3
A three-dimensional array of memory elements reversibly change a level of electrical conductance/resistance in response to one or more voltage differences being applied across them. Memory elements are formed across a plurality of planes...  
WO/2013/169551A1
In some aspects, a memory cell (10a) is provided that includes a steering element (14), a metal-insulator-metal ("MIM") stack (30a) coupled in series with the steering element, and a conductor (18) above the MIM stack. The MIM stack incl...  
WO/2013/164467A2
A device comprising a first electrode; a second electrode; and an active material positioned between the first and second electrode, wherein the active material comprises a plurality of randomly positioned conducting wires coated with a ...  
WO/2013/164467A3
A device comprising a first electrode; a second electrode; and an active material positioned between the first and second electrode, wherein the active material comprises a plurality of randomly positioned conducting wires coated with a ...  
WO/2013/158242A2
A permanent solid state memory device is disclosed. Recording data in a permanent solid state memory device forms voids in a data layer between a first wire array and a second wire array. Wires of the first wire array extend transversely...  
WO/2013/152536A1
Disclosed are a resistive random access memory of a small electrode structure and a preparation method therefor, which belong to the field of semiconductor resistive random access memories in very-large-scale integration. The resistive r...  
WO/2013/150791A1
A method for designing a cross-point nonvolatile memory device equipped with memory elements arranged as an N×M matrix, with the memory elements being equipped with a resistance change element and a bidirectional current control element...  
WO/2013/145736A1
This nonvolatile storage device is provided with: a memory cell array (10) having a plurality of memory cells (11), each of which is configured of a first variable resistance element (141) and a first current control element (142); and a...  
WO/2013/145741A1
The present invention comprises the following: a step for forming a first electrode; a step for forming, on the first electrode, a metal oxide material layer constituted of a first metal oxide; a step for forming a mask on part of a main...  
WO/2013/140768A1
This nonvolatile storage device is provided with: a first interlayer insulating layer (101); a first wiring (102) disposed on the first interlayer insulating layer (101); a first plug (104) and having a recess (105) in a portion of the c...  
WO/2013/139162A1
Sb-Te-Ti phase change film material applicable to a phase change memory and a preparation method thereof. Sb-Te-Ti phase change storage material is obtained by doping Ti on the basis of Sb-Te phase change material, the doped Ti is bonded...  
WO/2013/136798A1
This variable resistance element is provided with a variable resistance film, a first electrode, which is disposed in contact with one surface of the variable resistance film, and a second electrode, which is disposed in contact with the...  
WO/2013/137262A1
Provided is a resistance change memory having a high on/off ratio. The resistance change memory of an embodiment comprises: a first electrode containing a first element; a resistance change layer formed on the first electrode and compris...  
WO/2013/125172A1
A resistance-changing layer (103) has a first resistance-changing layer (103a) including an oxygen-deficient first metal oxide and a second resistance-changing layer (103b) including an oxygen-deficient second metal oxide different from ...  
WO/2013/125421A1
Provided is a resistance switching device having a high resistance variation ratio, excellent responsiveness, and excellent resistance memory characteristics (retention characteristics) and repetition durability. A resistance switching d...  
WO/2013/123704A1
A method for preparing a resistive random access memory comprises the steps of: preparing a bottom electrode (2) on a substrate (1); partially oxidizing the metal of the bottom electrode (2) using dry-oxygen oxidation or wet-oxygen oxida...  
WO/2013/121661A1
Provided are a thin film or a laminate which undergoes phase transitions through a Mott transition at room temperature to achieve a switching function. Provided is a manganese oxide thin film laminate formed on the surface of a substrate...  
WO/2013/121660A1
Provided are a thin film or a laminate which undergoes phase transitions through a Mott transition at room temperature to achieve a switching function. Provided is a manganese oxide thin film laminate formed on the surface of a substrate...  
WO/2013/118378A1
Provided is a semiconductor device which is equipped with: an address decoder which decodes an address input from an address line in order to output a word selection signal to a word line; a memory cell array which has a plurality of non...  
WO/2013/111548A1
A nonvolatile storage element is provided with: a first electrode (105); a second electrode (108); and a resistance changing layer (106) that is interposed between the first electrode (105) and the second electrode (108), and the resista...  
WO/2013/112291A1
A non-volatile memory device includes a plurality of non-volatile memory cells (1). Each of the non-volatile memory cells includes a first electrode (101), a diode steering element (110), a storage element (118) located in series with th...  
WO/2013/111545A1
This variable-resistance non-volatile storage device is equipped with: a first electrode layer (101); a second electrode layer (104); an intervenient first variable-resistance layer (102) that is provided between the first electrode laye...  
WO/2013/109954A3
Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a curre...  
WO/2013/108593A1
The method includes: a step of forming an MSM diode element (10a) on a substrate (100); a step of forming a resistance-change element (10b) on the MSM diode element (10a); a step of covering the sidewall of the semiconductor layer (105) ...  
WO/2013/108508A1
Provided is a thin film or a laminate that undergoes phase transition due to a Mott transition at room temperature, achieving a switching function. In a certain embodiment of the present invention, a manganese oxide thin film (2), which ...  
WO/2013/108507A1
Provided is a thin film or a laminate that undergoes phase transition due to a Mott transition at room temperature, achieving a switching function. In a certain embodiment of the present invention, a manganese oxide thin film (2), which ...  
WO/2013/109954A2
Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has improved device switching performance and lifetime, due to the addition of a curre...  
WO/2013/103122A1
Provided is a rewritable switching element that is capable of suppressing variations in element characteristics even when miniaturized. The switching element includes the following: a first and second electrode that can be metal-bridged;...  
WO/2013/101499A2
A three-dimensional array of memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. Memory elements are provided across a plurality of planes positioned dif...  

Matches 401 - 450 out of 6,156