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WO/2013/078791 |
Disclosed are a memory device, memory array and manufacturing method thereof, the memory device comprising: a lower electrode layer consisting of an n-type semi-conductor material, a resistance variable material layer on the lower electr...
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WO/2013/080496 |
Memory cells (51) are formed at each intersection between X-axis bit lines (53a and 53b) and Y-axis word lines (52a) formed in a plurality of layers. In a multi-layer crosspoint structure in which there is a plurality of vertical array s...
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WO/2013/080452 |
This non-volatile storage element is equipped with: a first electrode (103); a second electrode (106); and a variable resistance layer (104) that comprises metal oxides and is formed between the first electrode (103) and the second elect...
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WO/2013/075416 |
A resistance random access memory unit comprises a unipolar RRAM (400) and an MOS transistor (300) connected in series thereto and acting as a selectron. The MOS transistor (300) is manufactured on a partially depleted SOI substrate, and...
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WO/2013/073187 |
A method for manufacturing a variable resistance nonvolatile storage device in which nonvolatile storage element layers are laminated by repeating a plurality of times steps (S100, S200, …) of forming a nonvolatile storage element laye...
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WO/2013/070307 |
A memory cell is proposed that includes a first electrode, a second electrode, and at least a first resistance-switching layer located be tween the first and second electrodes, wherein the resistance-switching layer comprises amorphous h...
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WO/2013/064021 |
Provided is a method for manufacturing a resistive random access storage unit, including the steps of: forming a resistive layer (20) on a first metal layer with a flat surface; forming a passivation layer (30) on the resistive layer (20...
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WO/2013/066496 |
In some aspects, a method of fabricating a memory cell is provided that includes fabricating a steering element (104) above a substrate, and fabricating a reversible- resistance switching element (102) cou- pled to the steering element b...
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WO/2013/061559 |
A nonvolatile storage cell comprises a first electrode (103), a second electrode (106) and a variable resistance layer (104). The variable resistance layer (104) includes: a first oxide layer (104a) composed of a metal oxide with nonstoi...
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WO/2013/060034 |
Provided in the present invention are a material based on silicon doped bismuth-tellurium for phase-changing storage devices and a preparation method therefor, wherein the material based on silicon doped bismuth-tellurium in the present ...
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WO/2013/058044 |
[Problem] To provide a strongly correlated non-volatile memory device which undergoes a phase transition caused by an electrical means and exhibits a non-volatile switching function. [Solution] An embodiment of the present invention prov...
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WO/2013/058853 |
A non-volatile memory cell includes a first electrode, a steering element, a metal oxide storage element located in series with the steering element, a dielectric resistor located in series with the steering element and the metal oxide s...
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WO/2013/057920 |
A non-volatile storage element is provided with a first wiring (102), a first plug (104) which is arranged on and electrically connected with the first wiring (102), an alteration prevention layer (105) which covers the entire region of ...
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WO/2013/057912 |
A non-volatile storage element, wherein when the voltage values of electric pulses have the relationship of V2>V1>0V>V3>V4 and the resistance values of a variable resistance layer have the relationship of R3>R2>R4>R1, the variable resist...
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WO/2013/054515 |
Disclosed is a non-volatile semiconductor storage device comprising a resistance change element wherein parasitic resistance between a lower electrode constituting a resistance change element and a resistance change layer is reduced. Thi...
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WO/2013/054506 |
The method includes: a step of forming a lower electrode (105) on top of a substrate (100); a step of forming a first resistance change layer (106a) constituted by a first metallic oxide on the lower electrode (105); a step of forming a ...
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WO/2013/051066 |
To provide a memory cell array having a structure which may be implemented with a simpler process than before, and a structure which is more suited to high densities than before, a memory cell has a structure in which channel layers (88p...
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WO/2013/051267 |
A nonvolatile storage device is provided with a first electrode (103), a second electrode (106), and a variable-resistance layer (104). The variable-resistance layer (104) comprises: a first oxide layer (104a) comprising a first metallic...
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WO/2013/047734 |
This polishing composition is used for the purpose of polishing a polishing object that contains a phase change alloy, and is characterized by containing ammonium ions (NH4 +). This polishing composition may additionally contain abrasive...
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WO/2013/047733 |
This polishing composition is used for the purpose of polishing an object of polishing that has a phase change alloy. This polishing composition is characterized by containing an ionic additive. Examples of the ionic additive include a c...
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WO/2013/044612 |
A vertical selection transistor, a memory cell having the vertical selection transistor, a three-dimensional memory array structure and a method for fabricating the three-dimensional memory array structure are provided. The vertical sele...
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WO/2013/040859 |
Disclosed are a nano multilayer film of electrical field modulation type, a field effect tube of electrical field modulation type, an electrical field sensor of switch type, and a random accessory memory of electrical field drive type, f...
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WO/2013/037720 |
The present invention particularly relates to a method for producing a system including at least one memory device comprising a plurality of non-volatile memory cells (1), each of which includes a phase-change material (22) configured to...
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WO/2013/038641 |
This invention includes: a step (c) for forming a first electroconductive film (105') on a substrate; steps (d, e) for forming a first metal oxide layer (106x"), a second metal oxide layer (106y") having a different level of oxygen defic...
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WO/2013/038647 |
A non-volatile storage element (20) comprising: a first electrode (105); a second electrode (107); a variable resistance layer (106) interposed between the first electrode (105) and the second electrode (107), and configured by laminatin...
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WO/2013/037195 |
A large-capacity multi-value resistive random access memory, including an upper electrode (1) and a lower electrode (4). A combination of a plurality of resistive material layers (2) and a defect layer (3) is inserted between the upper e...
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WO/2013/035695 |
A Cu-Te-alloy-based sintered body sputtering target comprising 40 to 90 at% of Te and a remainder made up by unavoidable impurities and Cu, said sputtering target being characterized in that the largest diameter of a segregated part that...
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WO/2013/032855 |
Methods for producing RRAM resistive switching elements having reduced forming voltage include doping to create oxygen deficiencies in the dielectric film. Oxygen deficiencies in a dielectric film promote formation of conductive pathways.
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WO/2013/027682 |
Provided is a method for forming a Ge-Sb-Te film, which comprises an Sb starting material introduction step, a first purging step, a Te starting material introduction step, a second purging step, a Ge starting material introduction step ...
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WO/2013/021674 |
A variable resistance memory according to an embodiment includes: a first wiring; a second wiring provided above the first wiring and intersecting with the first wiring; a third wiring provided above the second wiring and intersecting wi...
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WO/2013/021682 |
A variable resistance memory according to an embodiment includes: a first wiring; a second wiring provided above the first wiring and intersecting with the first wiring; a third wiring provided above the second wiring and intersecting wi...
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WO/2013/018842 |
Provided are: a semiconductor device which is capable of reducing the processes or reducing the area of a variable resistance element as much as possible; and a method for manufacturing the semiconductor device. A semiconductor device, w...
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WO/2013/017131 |
The invention describes the production and the design of an integrated memory component, comprising at least one surface contact (C) and a mating contact (O) from which at least one rectifying contact is embodied, and a ferroelectric or ...
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WO/2013/007113 |
Disclosed are a transparent and flexible organic resistive random access memory and a method for manufacturing the same. The transparent and flexible organic resistive random access memory comprises a transparent and flexible substrate a...
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WO/2013/005040 |
This invention relates to memory resistors, arrays of memory resistors and a method of making memory resistors. In particular, this invention relates to memory resistors having an on state and an off state, comprising: (a) a first electr...
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WO/2013/003979 |
A method for integrating manganese-oxide-based resistive memory with copper interconnection rear end process is provided. The method comprising: patterning is performed to form a copper lead wire (503a) whose blocking layer is a manganes...
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WO/2013/003978 |
The present invention relates to semiconductor memory technical field, specially a containing ruthenium-doped tantalum oxide based resistive type memory. The resistive type memory comprises an upper electrode, a lower electrode, and a co...
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WO/2013/001742 |
Provided is a nonvolatile semiconductor storage element that is provided with: a bidirectional current control element, which can ensure a sufficient on-current even if the current control element is microminiaturized, and has a high on/...
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WO/2012/176452 |
Provided is a semiconductor recording device in which even when the ambient temperature has changed it is easy to guarantee a read-out margin. The device is provided with: a memory cell (901) which includes a first variable resistance el...
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WO/2012/172898 |
[Problem] To provide a strongly correlated oxide field effect element that exhibits a switching function with phase transition by electrical means. [Means for solution] Disclosed is a strongly correlated oxide field effect element (100) ...
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WO/2012/169194 |
[Problem] To provide a method and device for producing a variable resistance element whereby it is possible to precisely form a metal oxide layer exhibiting a desired resistivity. [Solution] This method for producing a variable resistanc...
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WO/2012/169195 |
[Problem] To provide a variable resistance element wherein a forming process is unnecessary and it is possible to reduce the power consumption of the element and to miniaturize same. To also provide a method for producing said variable r...
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WO/2012/168981 |
For the purpose of providing a semiconductor storage device suited to miniaturization and having reduced contact resistance, the wiring structure of a memory array (MA) is as follows. Word lines (2) and bit lines (3) are extended in para...
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WO/2012/169198 |
A nonvolatile storage element (60) according to the present invention is provided with a current control element (50) having a bidirectional rectifying characteristic with respect to an applied voltage, and a resistance changing element ...
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WO/2012/162867 |
Provided is a resistive random access memory using an electric field enhancement layer, comprising: a top electrode (201), a bottom electrode (203), and a stacked layer located between the top electrode (201) and the bottom electrode (20...
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WO/2012/165018 |
According to one embodiment, a nonvolatile resistance change element includes a first electrode, a second electrode, a semiconductor layer and a first layer. The first electrode includes at least one of Ag, Ni, Co, Al, Zn, Ti, and Cu. Th...
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WO/2012/158719 |
An improved method of fabricating a resistive memory device is disclosed, A resistive memory includes a bottom electode, atop electrode and a resistive material layer interposed therebetween, interfaces are formed between the resistive m...
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WO/2012/151725 |
Provided are a semiconductor memory structure and a control method thereof, relating to the technical field of semiconductor non-volatile memories. The semiconductor memory structure includes a storage unit for storing information and a ...
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WO/2012/153818 |
A resistance-changing element which comprise a first electrode, a second electrode, and an ion-conducting layer disposed between the first electrode and the second electrode and which changes in resistance when metal ions supplied from t...
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WO/2012/142735 |
Provided is a semiconductor memory structure and a method for manufacturing the same, relating to the technical field of micro-electronic devices. The semiconductor memory performs, for example, erase operation and read operation control...
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