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Patent Searching and Data


Matches 451 - 500 out of 8,434

Document Document Title
WO/2011/083632A1
Disclosed is a memory cell that includes a transistor (T1) and a variable resistance element (RC1), which are formed on a base material (10). The transistor (T1) includes: a gate electrode (20), a source electrode (50), and a drain elect...  
WO/2011/080866A1
Disclosed is a memory device provided with a plurality of memory cells and an output line (12) shared among the memory cells. Each memory cell is provided with a transistor (6) formed on a substrate (1) and a resistance-change element (1...  
WO/2011/074243A1
A resistance-varying element comprising: a lower electrode; a first oxide layer formed on the lower electrode and comprising MOx (wherein x represents the content ratio of O to M); a second oxide layer formed on the first oxide layer and...  
WO/2011/071009A1
Provided is a structure for a variable-resistance element that uses an electrochemical reaction. Said structure limits the position at which metal cross-linking breaks to the position where it is preferable that said cross-linking breaks...  
WO/2011/064967A1
Disclosed is a nonvolatile storage element, which can achieve a stable resistance change, and furthermore, which is miniaturized. Also disclosed is a method for manufacturing the nonvolatile storage element. The nonvolatile storage eleme...  
WO/2011/065537A1
Disclosed is a nonvolatile semiconductor storage device provided with a first wiring; a second wiring that exist at positions opposed to the first wiring; and a variable resistance layer that exists between the first wiring and the secon...  
WO/2011/058947A1
Disclosed is a variable resistance element which has a first electrode (101), a second electrode (103), and an ion conducting layer (102), which is provided between the first electrode (101) and the second electrode (103) and contains at...  
WO/2011/052437A1
A non-linear element, such as a diode, in which an oxide semiconductor is used and a rectification property is favorable is provided. In a thin film transistor including an oxide semiconductor in which the hydrogen concentration is less ...  
WO/2011/052279A1
Compared to conventional technologies related to optical recording bodies using phase change, the recording/deletion speed can be made drastically faster, and the phase change speed can be controlled at the speed of a phonon time period ...  
WO/2011/052354A1
Disclosed is a variable resistance nonvolatile storage element wherein an electrode suitable for a variable resistance operation is provided, said electrode being composed of a metal nitride layer containing Ti and N. The nonvolatile sto...  
WO/2011/052239A1
The disclosed variable resistance non-volatile memory device is provided with: a semiconductor substrate (301); a variable resistance element (309) configured from a lower electrode (309a), an upper electrode (309c), and a variable resis...  
WO/2011/052292A1
The disclosed device has memory cells provided with transistors and variable resistance elements, and contains memory blocks (10) consisting of N number of memory cells sequentially connected in series. One end of a first transistor (T1)...  
WO/2011/045886A1
Disclosed is a resistance-change-type non-volatile storage device for reducing variation in resistance values of a low resistance state of a resistance-change element for stable performance. The resistance-change-type non-volatile storag...  
WO/2011/043448A1
Provided is a semiconductor device comprising at least a first electrode, a second electrode, and a layer that is interposed between the first electrode and the second electrode and includes a transition metal oxide layer, the transition...  
WO/2011/030559A1
In order to attain a more miniscule size and larger capacity of memory by reducing breakdown voltage for causing resistance variation and by suppressing irregularity of said breakdown voltage, disclosed is a non-volatile memory device (1...  
WO/2011/024271A1
A nonvolatile memory element comprising a first conductive layer, a second conductive layer so arranged as to face the first conductive layer, and a variable resistance layer arranged between the first conductive layer and the second con...  
WO/2011/024455A1
Disclosed are a resistance-change semiconductor memory device that has a stable resistance change without being influenced by the base thereof and that is suitable for increased capacity, and a production method therefor. The semiconduct...  
WO/2011/013344A1
The disclosed variable-resistance non-volatile memory device (100) is provided with a plurality of memory cells (M11, M12, M21, M22) each comprising a variable-resistance element (R11, R12, R21, R22) and a two-terminal current control el...  
WO/2010/144730A3
Certain embodiments disclosed herein relate to the formation of multi-component oxide heterostructures (MCOH) using surface nucleation to pattern the atomic layer deposition (ALD) of perovskite material followed by patterned etch and met...  
WO/2011/013255A1
Provided is a nonvolatile storage device characterized by being provided with a storage unit comprising a first insulating layer (10), a second insulating layer (20) which is formed in contact with the first insulating layer (10) after t...  
WO/2011/007538A1
Disclosed is a variably resistant element (100) used in a memory device having a through-hole, cross-point structure. Further disclosed is a variably resistant memory device using same. The variably resistant element (100) is provided wi...  
WO/2010/150723A1
Disclosed is a variable resistance element which has higher reliability, higher integration and excellent insulation characteristics. Specifically disclosed is a variable resistance element wherein a first electrode that is composed of a...  
WO/2010/150720A1
Disclosed is a semiconductor device which comprises a variable resistance element having sufficient switching characteristics and has high reliability, high integration and excellent insulation characteristics. Specifically disclosed is ...  
WO/2010/146850A1
A nonvolatile storage device (10A) is provided with an upper electrode layer (2), a lower electrode layer (4), a resistance change layer (3) sandwiched between the upper electrode layer (2) and the lower electrode layer (4), and a charge...  
WO/2010/147073A1
In a resistive switching memory device provided with only two electrodes, use of the two electrodes is shared between both of cases where a resistance state is changed by the application of a control voltage, and where a drive voltage us...  
WO/2010/144730A2
Certain embodiments disclosed herein relate to the formation of multi-component oxide heterostructures (MCOH) using surface nucleation to pattern the atomic layer deposition (ALD) of perovskite material followed by patterned etch and met...  
WO/2010/140296A1
Provided are a nonvolatile memory element wherein even if a defect occurs in an nonvolatile memory element, writing data to or reading data from other nonvolatile memory elements arranged in the same line or the same row in which the def...  
WO/2010/137339A1
A manufacturing method of memory-cell arrays, wherein multiple first conductor layers (2) and multiple second conductor layers (14) are provided in extension so as to three-dimensionally intersect with each other, on a semiconductor subs...  
WO/2010/135460A1
Disclosed is an encapsulant composition containing about 15 to about 50 wt% of an ethylene/ethyl acrylate/maleic anhydride copolymer containing about 20 to about 40 wt% of an ethylene/glycidyl (meth)acrylate copolymer; about 2 to about 3...  
WO/2010/125805A1
Provided is a method for writing data to a resistance-change element (10a) that can reversibly transition between a high-resistance state and a low-resistance state depending on the polarity of an applied voltage. Even for a resistance-c...  
WO/2010/125780A1
Provided is a nonvolatile storage element which has less operational fluctuation and is capable of stable operation. The nonvolatile storage element is provided with: a first electrode (102); a second electrode (106); a variable resistan...  
WO/2010/119677A1
A resistance-change element with a design which can improve the stability of the resistance-change operation and reduce the current necessary for changing the resistance-change element, in its initial state immediately after production, ...  
WO/2010/116754A1
Provided is a drive method for increasing the retention characteristics of information (resistance values) written to resistance-change non-volatile memory elements. Said method includes: a first write process (S01) that applies a first ...  
WO2010109803A1
Memory cells (MC) are each provided with one transistor and one resistance-change element. Each transistor is provided with a first main terminal, a second main terminal, and a control terminal. Each resistance-change element is provided...  
WO2010109876A1
A method of driving a resistance-change element, comprising: a writing process of applying a write voltage pulse of a first polarity to a metal oxide layer (3) to change the resistance state of the metal oxide layer (3) from high to low ...  
WO/2010/098463A1
Disclosed is a switching element which comprises two electrodes and an organic bistable material intercalated between the electrodes, and which is expected to be applied to organic memory elements and others. Specifically disclosed is a ...  
WO/2010/095295A1
Disclosed is a resistive memory element which has a high resistance change rate and an excellent memory effect. Specifically disclosed is a resistive memory element (1) which comprises an element body (2) and at least a pair of electrode...  
WO/2010/095296A1
Disclosed is a resistive memory element which has a high resistance change ratio and an excellent memory effect. Specifically disclosed is a resistive memory element (1) which comprises an element body (2) and at least a pair of electrod...  
WO/2010/090002A1
In a non-volatile memory element (100), a resistance change layer (107) comprises a first metal oxide MOx and a second metal oxide MOy. The reaction energy of the chemical reaction represented by chemical reaction formula (13) involving ...  
WO/2010/087000A1
A process for fabricating a nonvolatile storage having a variable resistance layer where the resistance is varied by at least any one of an applied electric field and an applied current, and a first electrode for applying a voltage to th...  
WO/2010/087211A1
The disclosed non-volatile memory element is provided with a first electrode (103), a second electrode (105), and a resistance change layer (104) present between the first electrode (103) and the second electrode (105), and the resistanc...  
WO/2010/086916A1
A resistance change element of the present invention comprises: a first electrode (103); a second electrode (107); and a resistance change layer that is interposed between the first electrode (103) and the second electrode (107) and is p...  
WO/2010/084774A1
A nonvolatile memory cell (1) is provided with an electrode (10), an electrode (20), and an oxide layer (30) arranged between the electrode (10) and the electrode (20), and in the nonvolatile memory cell, resistance varies when a voltage...  
WO/2010/079829A1
In the case of forming an ion-conducting layer on a first electrode to be a metal ion supply source, insulating characteristics of the ion-conducting layer is prevented from deteriorating, while preventing the first electrode from oxidiz...  
WO/2010/079827A1
Disclosed is a semiconductor device with a built-in resistance change element that makes it possible to increase reliability, increase density, and decrease electrode resistance. Disclosed is a semiconductor device that has a resistance ...  
WO/2010/079816A1
Provided is a semiconductor device loaded with a variable resistance element that can increase reliability, increase density and prevent deterioration of insulating characteristics and yield. The semiconductor device has a variable resis...  
WO/2010/073897A1
A variable resistance element which comprises a lower electrode (101), an upper electrode (103) and a variable resistance layer (102) that is positioned between the lower electrode (101) and the upper electrode (103). The variable resis...  
WO/2010/070895A1
Disclosed is a non-volatile storage device (100) which is provided with a variable resistance element and which allows stable operation. The non-volatile storage device (100) is provided with: memory cells (M111, M112, …) wherein the r...  
WO/2010/067585A1
Disclosed is a resistance change element which is capable of preventing the interface resistance, for the side for which the resistance is not changed, from becoming high due to the applied voltage. The resistance change element is confi...  
WO/2010/064444A1
Disclosed is a nonvolatile memory element (10) provided with a substrate (11); a lower electrode layer (15) and a resistance layer (16) formed sequentially on the substrate (11); a variable resistance layer (31) formed on the resistance ...  

Matches 451 - 500 out of 8,434