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Matches 501 - 550 out of 8,434

Document Document Title
WO/2010/064340A1
Provided is a variable-resistance type nonvolatile storage device which can change resistance thereof stably and accurately at a low voltage. A method for manufacturing the device is also disclosed. The nonvolatile storage device inclu...  
WO/2010/064410A1
Disclosed is a nonvolatile memory element provided with a first electrode (103), a second electrode (109), and a variable resistance layer (106) which is placed between the first electrode and the second electrode and has the resistance ...  
WO/2010/064446A1
Provided is a nonvolatile memory element capable of stable resistance change operation at a low breakdown voltage. The nonvolatile memory element (100) is equipped with a first electrode layer (103), a second electrode layer (105), and a...  
WO/2010/058569A1
A variable resistance element (105) reversibly switches between a low resistance state and a high resistance state by application of electrical signals of different polarities. If a current flowing when a voltage of a first polarity is a...  
WO/2010/050094A1
Provided are a nonvolatile semiconductor storage device and a manufacturing method therefor with which microminiaturization and large capacity are possible due to a cross-point structure wherein memory cells are formed in contact holes a...  
WO/2010/014869A3
A chemovoltaic cell converts chemical energy generated by an in-situ molecular hydrogen oxidation reaction into electrical energy by creating a chemically induced nonequilibrium electron population on a catalytic surface of a Schottky st...  
WO/2010/003395A3
Disclosed is a triple-gate or multi-gate component based on the quantum mechanical tunneling effect. Said component comprises at least two tunneling electrodes (1a, 1b) on a substrate that are separated by a gap through which electrons c...  
WO/2010/038423A1
A nonvolatile storage element is composed of a first electrode (103) formed on a substrate (101), a variable resistance layer (108) and a second electrode (107). The variable resistance layer has a multilayer structure which includes at...  
WO/2010/038442A1
Provided are a method for driving a resistance change element capable of a stable operation and a nonvolatile storage device which implements the method. The method comprises a writing step for changing the resistance state of a resista...  
WO/2010/038786A1
Disclosed is a memory element having low-power consumption. Also disclosed are a method for manufacturing the memory element and a memory device comprising the memory element. The memory element comprises a resistor that causes a change...  
WO/2010/032470A1
Disclosed is a current suppressing element that can prevent the occurrence of write disturbance, can allow high current to flow into a resistance variable element, and can write data without any problem even when electric pulses having d...  
WO/2010/032468A1
Disclosed is a storage element provided with a resistance variable element (1) wherein an electrical resistance value of each of the storage elements (3) arranged in matrix in a storage device (21) changes when an electrical pulse having...  
WO/2010/029645A1
A nonvolatile storage device is provided with an electrode, and a storage layer which is connected to the electrode and permits resistance to change by a current applied from the electrode. The electrode is provided with a first layer an...  
WO/2010/029634A1
Provided is a resistance-varying element comprising a resistance-varying portion including a first resistance-varying layer caused to exhibit a plurality of states of different electric resistivities by at least one of an applied voltage...  
WO/2010/029607A1
An information recording/reproducing device is provided with a recording layer and a driving section. The recording layer has a first layer which contains a first compound. The first compound contains a mixed crystal of a first oxide con...  
WO/2010/026923A1
Disclosed is a storage element that can simultaneously satisfy the number of times of repetitive operations and low-voltage operating characteristics that are in a trade-off relationship. A high-resistivity layer (4) and an ion source l...  
WO/2010/026924A1
Disclosed is a storage element that can increase the number of times of repetitive operations and has an excellent balance between high-speed operating characteristics for writing and erasing and resistance value holding properties durin...  
WO/2010/022585A1
A back sheet of solar cell with high adhesion property comprises a substrate (3) and a fluorine-based film (2). A layer of fluoro-siloxane film (1) or silicon-titanium compound film (4) exists between the substrate (3) and the fluorine-b...  
WO/2010/021134A1
A memory cell (300) is configured so that it is equipped with a semiconductor substrate (301); a variable resistance element (309) that consists of a lower electrode (309a), an upper electrode (309c), and a variable resistance layer (309...  
WO/2009/107948A3
Provided are a MIT device self-heating preventive-circuit that can solve a self-heating problem of a MIT device (100) and a method of manufacturing a MIT device self-heating preventive-circuit integrated device. The MIT device self-heati...  
WO/2010/014869A2
A chemovoltaic cell converts chemical energy generated by an in-situ molecular hydrogen oxidation reaction into electrical energy by creating a chemically induced nonequilibrium electron population on a catalytic surface of a Schottky st...  
WO/2010/012858A1
Disclosed herein is an apparatus including a housing (12), electronic circuitry (18), and an electronic component (22). The electronic circuitry (18) is in the housing (12). The electronic circuitry (18) includes a first capacitive conne...  
WO/2009/107993A3
Provided are a high current control circuit including a metal-insulator transition (MIT) device (100) and a system including the high current control circuit so that a high current can be controlled and switched by the small-size high cu...  
WO/2010/004705A1
Disclosed is a nonvolatile memory element comprising a first electrode (103), a second electrode (108), and a resistance change layer (107) that is interposed between the first electrode (103) and the second electrode (108) and undergoes...  
WO/2010/004675A1
Disclosed is a memory element (3) comprising: resistance change elements (1) which are arranged in matrix in a memory device, can change in the electric resistance value when an electric pulse having a positive or negative polarity is ap...  
WO/2009/157479A1
A switching element is provided with a variable resistance layer (13) containing an oxynitride, a first electrode (11) arranged in contact with the variable resistance layer (13), and a second electrode (12) which is arranged in contact ...  
WO/2009/153870A1
A phase-change memory element comprises a perovskite-type layer formed of a material having a perovskite-type structure and a phase-change recording material layer which is formed on the perovskite-type layer and which is energized via t...  
WO/2009/154266A1
Disclosed is a resistance change type nonvolatile memory that has an insulation film structure, is advantageous for the implementation of high integration, and achieves stable switching characteristics, and a manufacturing method therefo...  
WO/2009/150751A1
There is provided a switching element capable of high density integration and facilitating lamination. The switching element (100) includes: an insulating substrate (10), a first electrode (30) provided on the insulating substrate (10), ...  
WO/2009/150814A1
In a semiconductor device (100), an interlayer insulating layer (115) is formed on a topmost layer wiring (114), and contacts (116, 117) are formed through the interlayer insulating layer (115). A lower electrode (118a) of a variable re...  
WO/2009/147790A1
The non‑volatile storage element has a first electrode (103), a second electrode (105), and a variable resistance layer (104) that is provided between the first and second electrodes and can reversibly vary the inter‑electrode resist...  
WO/2009/142165A1
Disclosed is a semiconductor device including a field effect transistor comprising a diffusion layer and a resistance change element comprising a variable resistor layer. The semiconductor device comprises the variable resistor layer pro...  
WO/2009/141857A1
Provided is a resistance change nonvolatile memory device which enables the optimization of the size of a transistor of a memory cell. The resistance change nonvolatile memory device comprises a memory cell (300) constituted by connectin...  
WO/2009/139185A1
A non-volatile semiconductor memory device having a crosspoint configuration which combines non-ohmic elements and a variable resistance layer is comprised of an interlayer insulating layer (16) formed on a substrate (11) which includes ...  
WO/2009/136467A1
Provided is a nonvolatile storage element including: a first electrode (503), a second electrode (505), and a resistance-variable layer (504) arranged between the first electrode and the second electrode. The resistance value between the...  
WO/2009/125777A1
Disclosed is a resistance change element that is provided with a lower electrode formed upon a semiconductor or an insulator substrate, a resistance change material layer formed upon the lower electrode and composed mainly of transition ...  
WO/2009/122601A1
A nonvolatile memory device is characterized by comprising first electrode extending in a first direction, a first interelectrode insulating layer provided between the first electrodes, second electrodes extending in a second direction t...  
WO/2009/122567A1
This invention provides an information recording/reproducing device comprising a first layer, a second layer, and a recording layer which is held between the first layer and the second layer and, upon the supply of current through the fi...  
WO/2009/119533A1
Provided is a semiconductor storage device which can simultaneously realize the high reliability and the cell area reduction. A selection electrode (106) is formed to sandwich a p-type semiconductor region (102) and an insulating film (1...  
WO/2009/118926A1
A nonvolatile storage device is provided with a substrate; a first electrode which extends in a first direction on the substrate; a second electrode which extends in a second direction intersecting the first direction and is arranged on ...  
WO/2009/116564A1
Provided is a resistance change element capable of reducing the current required when switching from a low-resistance state to a high-resistance state. The resistance change element of the present example has three or more electrodes, an...  
WO/2009/114796A1
A non-volatile resistive switching memory that includes a material which changes between the insulative and conductive states due to correlations between electrons, particularly via a Mott transition. The material is crystallized into th...  
WO/2009/113699A1
This disclosure provides an information recording device for use in a non-volatile information recording/reproduction system having a high recording density, the device including a resistive material having less phase separation or the l...  
WO/2009/111832A1
The present disclosure provides a new type of gapless semiconductor material having electronic properties that can be characterized by an electronic band structure which comprises valence and conduction band portions VB1 and CB1, respect...  
WO/2008/059701A9
This invention provides a nonvolatile memory element comprising a first electrode (103), a second electrode (105), and a resistance change layer (104), provided between the first and second electrodes (103, 105), for undergoing a reversi...  
WO/2009/110120A1
A nonvolatile memory device is characterized in that it comprises a substrate, a first electrode provided on the substrate, a second electrode provided above the first electrode so as to cross the first electrode, and a memory section pr...  
WO/2009/107948A2
Provided are a MIT device self-heating preventive-circuit that can solve a self-heating problem of a MIT device (100) and a method of manufacturing a MIT device self-heating preventive-circuit integrated device. The MIT device self-heati...  
WO/2009/107993A2
Provided are a high current control circuit including a metal-insulator transition (MIT) device (100) and a system including the high current control circuit so that a high current can be controlled and switched by the small-size high cu...  
WO/2009/104789A1
Disclosed is a method for manufacturing a variable resistance element, wherein occurrence of corrosion can be reduced without raising the substrate temperature. Specifically, a multilayer film comprising a high-melting-point metal film a...  
WO/2009/104229A1
Disclosed is a resistive nonvolatile memory element that enables miniaturization and that is equipped with current paths that can be realized by a simple and easy process. The resistive nonvolatile memory element of this invention is cha...  

Matches 501 - 550 out of 8,434