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WO/2013/161053A1 |
Provided is a secondary cell which applies an all-solid-state secondary cell structure comprising a storage layer sandwiched between a positive electrode layer and a negative electrode layer, and which is superior to conventional seconda...
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WO/2013/150791A1 |
A method for designing a cross-point nonvolatile memory device equipped with memory elements arranged as an N×M matrix, with the memory elements being equipped with a resistance change element and a bidirectional current control element...
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WO/2013/145736A1 |
This nonvolatile storage device is provided with: a memory cell array (10) having a plurality of memory cells (11), each of which is configured of a first variable resistance element (141) and a first current control element (142); and a...
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WO/2013/145741A1 |
The present invention comprises the following: a step for forming a first electrode; a step for forming, on the first electrode, a metal oxide material layer constituted of a first metal oxide; a step for forming a mask on part of a main...
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WO/2013/140768A1 |
This nonvolatile storage device is provided with: a first interlayer insulating layer (101); a first wiring (102) disposed on the first interlayer insulating layer (101); a first plug (104) and having a recess (105) in a portion of the c...
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WO/2013/136798A1 |
This variable resistance element is provided with a variable resistance film, a first electrode, which is disposed in contact with one surface of the variable resistance film, and a second electrode, which is disposed in contact with the...
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WO/2013/137262A1 |
Provided is a resistance change memory having a high on/off ratio. The resistance change memory of an embodiment comprises: a first electrode containing a first element; a resistance change layer formed on the first electrode and compris...
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WO/2013/138029A1 |
This disclosure provides systems, methods and apparatus comprising high capacitance density metal-insulator-metal capacitors. In one aspect, an apparatus includes a first base metal layer (1004) on a first side of a substrate (1002). A f...
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WO/2013/125172A1 |
A resistance-changing layer (103) has a first resistance-changing layer (103a) including an oxygen-deficient first metal oxide and a second resistance-changing layer (103b) including an oxygen-deficient second metal oxide different from ...
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WO/2013/125421A1 |
Provided is a resistance switching device having a high resistance variation ratio, excellent responsiveness, and excellent resistance memory characteristics (retention characteristics) and repetition durability. A resistance switching d...
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WO/2013/121661A1 |
Provided are a thin film or a laminate which undergoes phase transitions through a Mott transition at room temperature to achieve a switching function. Provided is a manganese oxide thin film laminate formed on the surface of a substrate...
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WO/2013/121660A1 |
Provided are a thin film or a laminate which undergoes phase transitions through a Mott transition at room temperature to achieve a switching function. Provided is a manganese oxide thin film laminate formed on the surface of a substrate...
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WO/2013/111548A1 |
A nonvolatile storage element is provided with: a first electrode (105); a second electrode (108); and a resistance changing layer (106) that is interposed between the first electrode (105) and the second electrode (108), and the resista...
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WO/2013/110395A1 |
The invention proceeds from a dielectric material for use in electrical energy storage devices (10), said material comprising at least two nanostructures (18, 20, 22, 24) which are each embedded in an electrically insulating matrix (28) ...
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WO/2013/111545A1 |
This variable-resistance non-volatile storage device is equipped with: a first electrode layer (101); a second electrode layer (104); an intervenient first variable-resistance layer (102) that is provided between the first electrode laye...
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WO/2013/108593A1 |
The method includes: a step of forming an MSM diode element (10a) on a substrate (100); a step of forming a resistance-change element (10b) on the MSM diode element (10a); a step of covering the sidewall of the semiconductor layer (105) ...
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WO/2013/108508A1 |
Provided is a thin film or a laminate that undergoes phase transition due to a Mott transition at room temperature, achieving a switching function. In a certain embodiment of the present invention, a manganese oxide thin film (2), which ...
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WO/2013/108507A1 |
Provided is a thin film or a laminate that undergoes phase transition due to a Mott transition at room temperature, achieving a switching function. In a certain embodiment of the present invention, a manganese oxide thin film (2), which ...
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WO/2013/103122A1 |
Provided is a rewritable switching element that is capable of suppressing variations in element characteristics even when miniaturized. The switching element includes the following: a first and second electrode that can be metal-bridged;...
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WO/2013/094169A1 |
This non-volatile storage device is equipped with a memory cell array (10) that has multiple memory cells (11), each of said memory cells comprising a variable resistance component (141) and a first current control component (142) The de...
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WO/2013/089940A1 |
A nonvolatile resistive memory element has a novel variable resistance layer that includes a metal nitride, a metal oxide-nitride, a two-metal oxide-nitride, or a multilayer stack thereof. One method of forming the novel variable resista...
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WO/2013/085815A1 |
A memory cell is provided that includes a steering element (14) and a metal-insulator-metal ("MIM") stack (30g) coupled in series with the steering element. The MIM stack includes a first dielectric material layer (12a) a second dielectr...
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WO/2013/080496A1 |
Memory cells (51) are formed at each intersection between X-axis bit lines (53a and 53b) and Y-axis word lines (52a) formed in a plurality of layers. In a multi-layer crosspoint structure in which there is a plurality of vertical array s...
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WO/2013/080452A1 |
This non-volatile storage element is equipped with: a first electrode (103); a second electrode (106); and a variable resistance layer (104) that comprises metal oxides and is formed between the first electrode (103) and the second elect...
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WO/2013/075209A1 |
Methods for the aqueous oxidation of metallic films are described. For example, a film of hafnium metal on a silicon substrate can be oxidized to hafnium dioxide using hot deionized water. Methods for fabricating electrical components su...
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WO/2013/078068A1 |
Passive devices such as resistors and capacitors are provided for a 3D non-volatile memory device. In a peripheral area of a substrate, a passive device includes alternating layers of a dielectric (L0, L2,...,L12) such as oxide and a con...
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WO/2013/073187A1 |
A method for manufacturing a variable resistance nonvolatile storage device in which nonvolatile storage element layers are laminated by repeating a plurality of times steps (S100, S200, …) of forming a nonvolatile storage element laye...
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WO/2013/074546A1 |
Provided is a device comprising a channel through and defined by a plurality of layers surrounding the channel, the channel connecting a first and a second chambers separated by the plurality of layers, wherein the plurality of layers co...
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WO/2013/074298A1 |
A spiral inductor (300) is formed on a semiconductor substrate (102). One or more insulating layers (104, 303) are disposed on a first surface of the semiconductor substrate. A spiral structure (106) is formed of a first conductive mater...
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WO/2013/071178A1 |
A method for metal semiconductor wafer bonding for high-Q capacitors or varactors is provided. An exemplary capacitor (210) includes a first plate (310) formed on a glass substrate (305), a second plate (330), and a dielectric layer (315...
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WO/2013/065093A1 |
The purpose of the invention is to prevent the electrodes of a quantum battery capable of being reduced in cost and operating stably from being oxidized by charging by causing an n-type metal oxide semiconductor to have a photo-excited s...
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WO/2013/061559A1 |
A nonvolatile storage cell comprises a first electrode (103), a second electrode (106) and a variable resistance layer (104). The variable resistance layer (104) includes: a first oxide layer (104a) composed of a metal oxide with nonstoi...
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WO/2013/057912A1 |
A non-volatile storage element, wherein when the voltage values of electric pulses have the relationship of V2>V1>0V>V3>V4 and the resistance values of a variable resistance layer have the relationship of R3>R2>R4>R1, the variable resist...
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WO/2013/058044A1 |
[Problem] To provide a strongly correlated non-volatile memory device which undergoes a phase transition caused by an electrical means and exhibits a non-volatile switching function. [Solution] An embodiment of the present invention prov...
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WO/2013/057920A1 |
A non-volatile storage element is provided with a first wiring (102), a first plug (104) which is arranged on and electrically connected with the first wiring (102), an alteration prevention layer (105) which covers the entire region of ...
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WO/2013/054506A1 |
The method includes: a step of forming a lower electrode (105) on top of a substrate (100); a step of forming a first resistance change layer (106a) constituted by a first metallic oxide on the lower electrode (105); a step of forming a ...
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WO/2013/054515A1 |
Disclosed is a non-volatile semiconductor storage device comprising a resistance change element wherein parasitic resistance between a lower electrode constituting a resistance change element and a resistance change layer is reduced. Thi...
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WO/2013/051267A1 |
A nonvolatile storage device is provided with a first electrode (103), a second electrode (106), and a variable-resistance layer (104). The variable-resistance layer (104) comprises: a first oxide layer (104a) comprising a first metallic...
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WO/2013/038647A1 |
A non-volatile storage element (20) comprising: a first electrode (105); a second electrode (107); a variable resistance layer (106) interposed between the first electrode (105) and the second electrode (107), and configured by laminatin...
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WO/2013/038641A1 |
This invention includes: a step (c) for forming a first electroconductive film (105') on a substrate; steps (d, e) for forming a first metal oxide layer (106x"), a second metal oxide layer (106y") having a different level of oxygen defic...
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WO/2013/036306A1 |
An interdigitated capacitor having digits of varying width is disclosed. One embodiment of a capacitor (100) includes a first plurality of conductive digits (110) and a second plurality of conductive digits (110) positioned in an interlo...
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WO/2013/021682A1 |
A variable resistance memory according to an embodiment includes: a first wiring; a second wiring provided above the first wiring and intersecting with the first wiring; a third wiring provided above the second wiring and intersecting wi...
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WO/2013/021674A1 |
A variable resistance memory according to an embodiment includes: a first wiring; a second wiring provided above the first wiring and intersecting with the first wiring; a third wiring provided above the second wiring and intersecting wi...
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WO/2013/018842A1 |
Provided are: a semiconductor device which is capable of reducing the processes or reducing the area of a variable resistance element as much as possible; and a method for manufacturing the semiconductor device. A semiconductor device, w...
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WO/2013/017131A2 |
The invention describes the production and the design of an integrated memory component, comprising at least one rectifying bottom contact and a top contact and a ferroelectric or piezoelectric layer as a conductive channel between the c...
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WO/2013/012450A1 |
An inductor in an integrated circuit structure (302) can include a first through silicon via (TSV) (305) comprising a first end (335) and a second end; a second TSV (310) comprising a first end and a second end; a first bottom (340) form...
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WO/2013/001742A1 |
Provided is a nonvolatile semiconductor storage element that is provided with: a bidirectional current control element, which can ensure a sufficient on-current even if the current control element is microminiaturized, and has a high on/...
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WO/2012/176452A1 |
Provided is a semiconductor recording device in which even when the ambient temperature has changed it is easy to guarantee a read-out margin. The device is provided with: a memory cell (901) which includes a first variable resistance el...
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WO/2012/172898A1 |
[Problem] To provide a strongly correlated oxide field effect element that exhibits a switching function with phase transition by electrical means. [Means for solution] Disclosed is a strongly correlated oxide field effect element (100) ...
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WO/2012/170148A1 |
An integrated circuit (IC) includes a first layer (310) of a conducting material, a second layer (302) of an insulating material, where the second layer has a first side arranged adjacent to the first layer, and a second side, as well as...
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