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Matches 551 - 600 out of 8,434

Document Document Title
WO/2009/104239A1
A non-volatile storage device is provided with a first layer, a second layer and a recording layer which is sandwiched between the first layer and the second layer, and can reversibly be shifted between a first state where resistance is ...  
WO/2009/101785A1
A nonvolatile semiconductor storage device (100) is provided with a substrate (102) having a transistor (101) formed thereon; a first interlayer insulating layer (103) formed on the substrate to cover the transistor; a first contact plug...  
WO/2009/096363A1
A resistance nonvolatile memory element having a MIM multilayer structure of metal/resistivity-varying material (transition metal oxide)/metal. The element constitutes a resistance nonvolatile semiconductor memory device. The memory devi...  
WO/2009/084514A1
A storage element is provided with a first electrode (106), a second electrode (108), and a variable resistance material layer, which is arranged between the electrodes and varies the resistance value corresponding to a voltage applied b...  
WO/2009/082064A1
The present invention relates to a biomolecule-based electronic device in which the biomolecule with redox potential is directly immobilized on the substrate. The present invention enables to excellently exhibit the capability of a prote...  
WO/2009/081595A1
A first wiring layer (19) containing a first memory wiring line (12) is connected with a second wiring layer (20) containing a second memory wiring line (17), by a first contact (21) formed through a first interlayer insulating layer (13...  
WO/2009/078251A1
Disclosed is a switching device comprising a first electrode (101), a second electrode (102), and a complex oxide ion-conducting layer (103) arranged between the first electrode (101) and the second electrode (102). The complex oxide ion...  
WO/2009/078172A1
This invention provides a nonvolatile memory element that can be operated at a high speed and, at the same time, has reversibly stable rewrite characteristics and good resistance retention characteristics, a process for producing the non...  
WO/2009/075073A1
The nonvolatile memory device of this invention is characterized by comprising a substrate (1), first wiring (3), first fillings (5) that are formed embedded in first through-holes (4), second wiring (11) that is perpendicular to the fir...  
WO/2009/072213A1
This invention provides a resistance change-type memory device.The resistance change-type memory device comprises a lower electrode, a metal oxide film provided on the lower electrode and having a variable resistance value, an upper elec...  
WO/2009/072201A1
This invention provides a resistance change element comprising a transition metal nitride-containing first electrode, a second electrode containing a noble metal or a noble metal oxide, and a transition metal oxide film disposed between ...  
WO/2009/069690A1
Provided is a memory cell which can apply a voltage required for changing a resistance value into a high state and a low state to a variable resistance element by suitably controlling the resistance value. In the memory cell, a storage e...  
WO/2009/069364A1
Provided is a highly integrated switching resistive RAM having an extremely small occupation area of memory cells. Memory cells (11-14) are formed corresponding to the four intersections of word lines (WL0, WL1) and bit lines (BL0, BL1)....  
WO/2009/069252A1
Disclosed is a nonvolatile storage device comprising a substrate (1); a first wiring (3); a first variable resistance element (5) and a lower electrode (6) of a first diode element, which are embedded in a first through hole (4); a secon...  
WO/2009/066500A1
A plurality of three-terminal variable resistance switching elements each having a source electrode, a drain electrode, and a gate electrode are connected to each other in series. The source electrode of each of the three-terminal variab...  
WO/2009/063645A1
Provided are via hole (12), which is formed where first wire (11) crosses second wire (14), and current control element (13), wherein current control layer (13b) is interposed between first electrode layer (13a) and second electrode laye...  
WO/2009/057262A1
A nonvolatile semiconductor storage device is provided with a substrate (1); a first wiring (2); a memory cell composed of a resistance variable element (5) and a part of a diode element (6); a second wiring (11) which orthogonally inter...  
WO/2009/057211A1
A method for manufacturing a semiconductor device has a step for forming a first conductive film (28a), a first memory layer (36), and a second conductive film (38), a step for forming a first mask having a linear pattern extended in a f...  
WO/2009/027826A3
Provided are a 3-terminal MIT switch which can easily control a discontinuous MIT jump and does not need a conventipnal gate insulating layer, a switching system including the 3-terminal MIT switch, and a method of controlling an MIT of ...  
WO/2009/050969A1
A nonvolatile semiconductor memory device comprises a memory cell array of electrically erasable programmable nonvolatile memory cells arranged in matrix, each memory cell using a variable resistor. A pulse generator is operative to gene...  
WO/2009/050833A1
A non-volatile memory element consists of a non-volatile element comprising a first electrode (503), a second electrode (505), and a resistance variable layer (504) which is interposed between the first electrode (503) and the second ele...  
WO/2009/050861A1
A nonvolatile memory element comprises a first electrode (103), a second electrode (105), and a resistance change layer (104) interposed between the first electrode (103) and the second electrode (105) and reversibly changing in resistan...  
WO/2009/051105A1
A switching element is provided with an ion conduction layer, and a first electrode (11) and a second electrode (12) arranged by being brought into contact with the ion conduction layer; and a third electrode (15) which is brought into c...  
WO/2009/003056A3
A nanoscale variable resistor including a metal nanowire as an active element, a dielectric, and a gate. By selective application of a gate voltage, stochastic transitions between different conducting states, and even length, of the nano...  
WO/2009/039631A1
A microphone apparatus includes a carrier chip and a microphone chip. The carrier chip includes a substrate with parallel top and bottom surfaces, a metallization layer overlying the top surface, and a cylindrical cavity that is bored th...  
WO/2009/041041A1
This invention provides a nonvolatile memory element (101) comprising a variable resistance layer (112) provided between a first electrode (111) and a second electrode (113). The variable resistance layer (112) comprises an oxide of a gr...  
WO/2009/038032A1
A variable resistance element is provided with a first electrode (12); a metal oxide layer (13) brought into contact with the first electrode (12); an interface oxidation layer (14) brought into contact with the metal oxide layer (13); a...  
WO/2009/033279A1
A thin film electro-luminescent device (TFEL) includes an active layer made of a direct bandgap semiconductor material, e.g. zinc oxide, doped with exciton binding centers, such as aluminum, in small amounts, e.g. 0.001 at% to 30.0 at%. ...  
WO/2009/027826A2
Provided are a 3-terminal MIT switch which can easily control a discontinuous MIT jump and does not need a conventipnal gate insulating layer, a switching system including the 3-terminal MIT switch, and a method of controlling an MIT of ...  
WO/2009/028250A1
Recording and erasing of data in PRAM have hitherto been performed based on a change in physical characteristics caused by primary phase transformation of a crystallized state and an amorphous state of a recording material which is a Te-...  
WO/2009/028249A1
Recording and erasing of data in PRAM have hitherto been performed based on a change in physical characteristics caused by primary phase transformation of a crystallized state and an amorphous state of a recording material which is a Te-...  
WO/2009/025037A1
[PROBLEMS] To provide a resistance variable element which is capable of bipolar operation under a predetermined principle of operation and can be used as a storage element. [MEANS FOR SOLVING PROBLEMS] The resistance variable element (X1...  
WO/2009/022693A1
Provided is a method for driving a storage device which can improve reliability of data write-in in a storage device including a variable resistance element. When writing data, write-in pulses of different shapes are applied between two ...  
WO/2009/020210A1
A fine switching element is provided with a first electrode (4), which includes an ion conductor, and a second electrode (5) composed of an electrical conductor. The switching element physically and electrically connects the first electr...  
WO/2009/020041A1
This invention provides a resistance variation-type memory device which can improve the capability of retaining the resistance value of a stored state and an erased state. A memory layer (5) comprising a high-resistance layer (2) and an ...  
WO/2009/003056A2
A nanoscale variable resistor including a metal nanowire as an active element, a dielectric, and a gate. By selective application of a gate voltage, stochastic transitions between different conducting states, and even length, of the nano...  
WO/2008/153006A1
An information recording/reproducing device is provided with a recording layer, and a means for recording information by generating phase change in the recording layer by applying a voltage to the recoding layer. The recording layer cont...  
WO/2008/153099A1
This invention provides an information recording/reproducing device comprising a laminated structure having an electrode layer and a recording layer, a buffer layer added to the electrode layer, and a voltage application part for applyin...  
WO/2008/152908A1
To provide a neuron element and a neural network information processing apparatus using the same. The neuron element (1) comprises an input part (10) that receives a plurality of input signals (xi) to generate weighted signals (xiwi) obt...  
WO/2008/149605A1
Disclosed is a variable resistance element comprising a first electrode, a variable resistance material layer formed on the first electrode, and a second electrode formed on the variable resistance material layer. The variable resistance...  
WO/2008/149808A1
A switch circuit is provided with a plurality of switch elements. Each switch element has two metal layers and a resistance variable layer arranged between the metal layers by being brought into contact with the metal layers. The switch ...  
WO/2008/149484A1
A nonvolatile storage element is provided with a first electrode layer (103), a second electrode layer (107), and a resistance change layer (106) that is interposed between the first electrode layer (103) and the second electrode layer (...  
WO/2008/146461A1
Disclosed is a nonvolatile semiconductor device comprising a first electrode (103), a second electrode (105) and a variable resistance layer (104) arranged between the first electrode (103) and the second electrode (105) and having a res...  
WO/2008/142919A1
Provided is a variable resistive element which performs high speed and low power consumption operation. In the variable resistive element, a metal oxide layer (10) is provided between a first electrode (11) and a second electrode (12), a...  
WO/2008/132899A1
In order to use a resistance change element having an MIM laminate structure of metal/metal oxide/metal as a switch element, an off resistance larger than that required for a memory element by a factor of 1000 or more must be achieved. I...  
WO/2008/126366A1
Disclosed is a variable resistance element comprising a first electrode (2), a second electrode (4), and a variable resistance layer (3) which is arranged between the first electrode and the second electrode and electrically connected wi...  
WO/2008/126365A1
A nonvolatile memory device comprises a first electrode (111), a second electrode (112), and a variable resistance layer (113) which is interposed between the electrodes and the resistance value of which is reversibly changed between res...  
WO/2008/123139A1
Disclosed is a resistance memory element which has a relatively high switching voltage and can achieve a relatively high change ratio in resistance. The resistance memory element comprises a base material (2) and opposite electrodes (3,4...  
WO/2008/046058A3
A transparent conductor including a conductive layer coated on a substrate is described. More specifically, the conductive layer comprises a network of nanowires that may be embedded in a matrix. The conductive layer is optically clear, ...  
WO/2008/123307A1
A nonvolatile information recorder/reproducer of low power consumption exhibiting high thermal stability. The information recorder/reproducer comprises a recording layer, and a means for recording information by applying a voltage to the...  

Matches 551 - 600 out of 8,434