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Patent Searching and Data


Matches 601 - 650 out of 8,470

Document Document Title
WO/2009/003056A2
A nanoscale variable resistor including a metal nanowire as an active element, a dielectric, and a gate. By selective application of a gate voltage, stochastic transitions between different conducting states, and even length, of the nano...  
WO/2008/153006A1
An information recording/reproducing device is provided with a recording layer, and a means for recording information by generating phase change in the recording layer by applying a voltage to the recoding layer. The recording layer cont...  
WO/2008/153099A1
This invention provides an information recording/reproducing device comprising a laminated structure having an electrode layer and a recording layer, a buffer layer added to the electrode layer, and a voltage application part for applyin...  
WO/2008/152908A1
To provide a neuron element and a neural network information processing apparatus using the same. The neuron element (1) comprises an input part (10) that receives a plurality of input signals (xi) to generate weighted signals (xiwi) obt...  
WO/2008/149605A1
Disclosed is a variable resistance element comprising a first electrode, a variable resistance material layer formed on the first electrode, and a second electrode formed on the variable resistance material layer. The variable resistance...  
WO/2008/149808A1
A switch circuit is provided with a plurality of switch elements. Each switch element has two metal layers and a resistance variable layer arranged between the metal layers by being brought into contact with the metal layers. The switch ...  
WO/2008/149484A1
A nonvolatile storage element is provided with a first electrode layer (103), a second electrode layer (107), and a resistance change layer (106) that is interposed between the first electrode layer (103) and the second electrode layer (...  
WO/2008/146461A1
Disclosed is a nonvolatile semiconductor device comprising a first electrode (103), a second electrode (105) and a variable resistance layer (104) arranged between the first electrode (103) and the second electrode (105) and having a res...  
WO/2008/142919A1
Provided is a variable resistive element which performs high speed and low power consumption operation. In the variable resistive element, a metal oxide layer (10) is provided between a first electrode (11) and a second electrode (12), a...  
WO/2008/132899A1
In order to use a resistance change element having an MIM laminate structure of metal/metal oxide/metal as a switch element, an off resistance larger than that required for a memory element by a factor of 1000 or more must be achieved. I...  
WO/2008/126366A1
Disclosed is a variable resistance element comprising a first electrode (2), a second electrode (4), and a variable resistance layer (3) which is arranged between the first electrode and the second electrode and electrically connected wi...  
WO/2008/126365A1
A nonvolatile memory device comprises a first electrode (111), a second electrode (112), and a variable resistance layer (113) which is interposed between the electrodes and the resistance value of which is reversibly changed between res...  
WO/2008/123139A1
Disclosed is a resistance memory element which has a relatively high switching voltage and can achieve a relatively high change ratio in resistance. The resistance memory element comprises a base material (2) and opposite electrodes (3,4...  
WO/2008/046058A3
A transparent conductor including a conductive layer coated on a substrate is described. More specifically, the conductive layer comprises a network of nanowires that may be embedded in a matrix. The conductive layer is optically clear, ...  
WO/2008/123307A1
A nonvolatile information recorder/reproducer of low power consumption exhibiting high thermal stability. The information recorder/reproducer comprises a recording layer, and a means for recording information by applying a voltage to the...  
WO/2008/117679A1
A variable resistance element is provided with a first electrically conductive unit, an insulating film pattern formed on the first electrically conductive unit, a step formed by the insulating film pattern against the upper surface of t...  
WO/2008/117494A1
Storage elements (3) provided in a storage device (21) in matrices comprise resistance change elements (1) the electrical resistance values of which are changed by application of an electrical pulse having a positive or negative polarity...  
WO/2008/102718A1
Provided is a semiconductor memory device comprising a resistance-varying element including a first electrode, a current passage region disposed to contact the first electrode, and a second electrode disposed to contact the current passa...  
WO/2008/071982A3
A method of characterizing a molecule comprises providing two electrodes (16a, 16b) which define a tunnelling gap between them; applying a potential difference between the electrodes; passing the molecule through the tunnelling gap; and ...  
WO/2008/081742A1
A resistance variable element (10), a resistance variable storage device and a resistance variable device are provided with a first electrode(2); a second electrode (4); and a resistance variable layer (3), which is arranged between the ...  
WO/2008/081741A1
A resistance variable element and a resistance variable storage device using such resistance variable element are provided with a first electrode; a second electrode; and a resistance variable layer (3), which is arranged between the fir...  
WO/2008/068991A1
Provided is a nonvolatile semiconductor memory device capable of executing rewriting operations of different resistance changes individually and simultaneously for a plurality of memory cells having variable resistance elements changed i...  
WO/2008/068992A1
Provided is a nonvolatile semiconductor storage device, which is enabled to perform a stable, high-speed switching operation on variable resistance elements by applying a voltage of a positive or negative polarity with no difference in t...  
WO/2008/062623A1
Provided is an element structure by which operating voltage variance and a leak current in an off-state are reduced in a resistance variable type nonvolatile storage device. The nonvolatile storage device is characterized in having a lam...  
WO/2008/059701A1
This invention provides a nonvolatile memory element comprising a first electrode (103), a second electrode (105), and a resistance change layer (104), provided between the first and second electrodes (103, 105), for undergoing a reversi...  
WO/2008/047770A1
[PROBLEMS] To provide a resistance variable element which can perform bipolar operation in prescribed operating principles and can be used as a storage element. [MEANS FOR SOLVING PROBLEMS] A resistance variable element is provided with ...  
WO/2008/047928A1
It is an object to provide an element structure in which defects are not easily generated and a semiconductor device that has the element. An element has a structure in which a layer containing an organic compound is interposed between a...  
WO/2008/046058A2
A transparent conductor including a conductive layer coated on a substrate is described. More specifically, the conductive layer comprises a network of nanowires that may be embedded in a matrix. The conductive layer is optically clear, ...  
WO/2008/035432A1
[PROBLEMS] To provide a semiconductor storage device wherein memory cells can be formed both in a simple structure and in a higher density. [MEANS FOR SOLVING PROBLEMS] The drain (18) of the selecting transistor (14) of each of memory ce...  
WO2008009105B1
A thin film transistor (TFT) array having test circuitry includes a thin film transistor array body having a plurality of pixels. Test circuitry is integrally formed with the body. The test circuitry includes a power supply for supplying...  
WO/2008/023637A1
A storage element is provided with a first electrode, a second electrode, and a resistance changing film (2) which is arranged between the first electrode and the second electrode to be connected with the both electrodes and changes a re...  
WO/2006/026961A3
The invention relates to a method for producing a switch element. The invention is characterised in that the switch element comprises three electrodes that are located in an electrolyte, two of which (source electrode and drain electrode...  
WO/2008/021073A2
The present invention provides devices and methods for making nano structures such a nanoheater. In one embodiment, the nanoheater element comprises a first reactive member and interlayer disposed in communication with at least a portion...  
WO/2008/017733A1
An ion beam etching method for processing three dimensional nanostructures, wherein a pre-fabricated nanostructure (12) formed on a substrate (8) is etched three dimensionally by bombarding the nanostructure in vacuum conditions by a bea...  
WO/2008/009105A1
A thin film transistor (TFT) array having test circuitry includes a thin film transistor array body having a plurality of pixels. Test circuitry is integrally formed with the body. The test circuitry includes a power supply for supplying...  
WO/2008/007481A1
Disclosed is a resistive memory device which has a relative high switching voltage and can achieve a relatively high resistance change ratio. The resistive memory device comprises an element (2) and counter electrodes (3,4) which are opp...  
WO/2008/001712A1
Typically provided is a switching element comprising a first insulating layer (1003) having an opening and made of a material for preventing the diffusion of metal ions, a first electrode (104) formed in the opening and containing a mate...  
WO/2008/000425A1
The invention relates to a method for producing a transponder (1) comprising an integrated circuit (2) for storing and/or processing data. According to the method of the invention, a cuboid support (3) having six faces (4, 5, 6, 7, 8, 9)...  
WO/2007/126384A3
The present invention relates to a solid state cooling/power generating device is provided comprising a first and second electrode separated by a vacuum gap. According to the present invention at least one of the electrodes is provided w...  
WO/2007/143852A1
A fabrication method is described for forming an electronic circuit on a flexible substrate consisting of plastic and opaque foils. Corresponding circuit structures are also described herein. The opaque substrate can be selected from a s...  
WO/2007/138646A1
A nonvolatile memory element is formed by a variable-resistance section and MISFET for memory selection connected in series to the variable-resistance section. The variable-resistance section includes: a thin film (tantalum pentoxide fil...  
WO/2007/131343A1
A low temperature method and system configuration for depositing a doped silicon layer on a silicon substrate of a selected grade. The silicon substrate for functioning as a light absorber and the doped silicon layer for functioning as a...  
WO/2007/125674A1
Provided are a variable resistance element having a constitution, in which the area of an electrically contributable region of a variable resistor is smaller than the area defined by an upper electrode or a lower electrode, and a method ...  
WO/2007/126384A2
The present invention relates to a solid state cooling/power generating device is provided comprising a first and second electrode separated by a vacuum gap. According to the present invention at least one of the electrodes is provided w...  
WO/2007/116749A1
A nonvolatile memory element comprises a first electrode (2), a second electrode (6) formed above the first electrode (2), a variable resistive film (4) which is formed between the first electrode (2) and the second electrode (6) and who...  
WO/2007/114099A1
Disclosed is a switching device which is operated by utilizing an electrochemical reaction and comprises an ion conductive layer (54) which is capable of conducting metal ions, a first electrode (49) formed in contact with the ion conduc...  
WO/2007/112925A1
The invention relates to a THz antenna array (20, 30, 40, 50) comprising a plurality of THz antennae (29, 39, 49, 49', 49' '), a THz antenna (29, 39, 49, 49', 49' ') having a photoconductive region (22, 32, 42) and a first electrode (21A...  
WO/2007/111478A1
Provided is continuous metal-insulator transition (MIT) material including a transition region in which resistance varies continuously from an insulator or a semiconductor to a metal by energy change between electrons.  
WO/2007/105284A1
Provided are a resistance varying storage element which is devised to increase the multi-value in comparison with its number, and a method for manufacturing the resistance varying storage element. The resistance varying storage element c...  
WO/2007/102212A1
A method for manufacturing a resistive memory. When resistive memories of the same type are manufactured by this method, the variation of the resistances of the resistive memories is reduced. The method is characterized by comprising a s...  

Matches 601 - 650 out of 8,470