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Patent Searching and Data


Matches 651 - 700 out of 8,465

Document Document Title
WO/2007/102341A1
Provided is a method for manufacturing a resistance-varying type element, which comprises the step of depositing a resistance-varying material (106) in such a manner in a contact hole formed in an inter-layer insulating layer (104) and h...  
WO/2007/091532A1
Disclosed is a switching device comprising an ion conductive layer (23) containing titanium oxide, a first electrode (21) arranged in contact with the ion conductive layer (23), and a second electrode (22) which is arranged in contact wi...  
WO/2007/091326A1
Over an insulating film (31) having a plug (35) buried therein, there are sequentially formed a second component releasing region (45) made of a first component and a second component, a solid electrolyte region (46) made of a chalcogeni...  
WO/2007/086325A1
An electric element is provided with a first electrode, a second electrode and a variable resistive thin film connected between the first electrode and the second electrode. The variable resistive thin film includes Fe3O4 as a constituti...  
WO/2007/069725A1
A switching element is provided with a first electrode, a second electrode, an ion conducting section, and a buffer section. The first electrode can supply metal ions. The ion conducting section is brought into contact with the first ele...  
WO/2006/002129A3
A hybrid molecular electronic device (10) having switching, memory, and sensor application is disclosed. In one embodiment, the device resembles a conventional field-effect transistor formed on a silicon-on-insulator (SOI) substrate (16)...  
WO/2007/062527A1
A thin film includes a substrate and a transparent, porous film of organic material, such as 8-hydroxyquinoline aluminum. The organic material is vapor deposited on the substrate such that the film has distinct helical columns extending ...  
WO/2007/060668A2
A non-volatile memory chip has word lines spaced a sub-F (sub-minimum feature size F) width apart with extensions of the word lines in at least two transition areas. Neighboring extensions are spaced at least F apart. The present inventi...  
WO/2007/060665A2
A portable storage device includes a mechanism for receiving a value of an identification parameter from a receiving device, a non-volatile memory for storing digital content, a licensing policy, and a license for viewing the digital con...  
WO/2007/056533A1
A method for forming quantum dots (11 ) includes forming a superlattice structure (18) that includes at least one nanostrip (40, 42) protruding from the superlattice structure, providing a quantum dot substrate (14), transferring the at ...  
WO/2007/050337A1
A printed transistor has a first gate (202) printed and disposed on a first side of a printed deposit of semiconductor material (201) and a second printed gate (301) disposed on an opposite side of the printed deposit of semiconductor ma...  
WO/2007/036026A1
A method of incorporating EL particles includes preparing target areas to receive EL particles and providing EL particles to the target areas. The method may include spot-heating target areas of a flexible substrate to form molten receiv...  
WO/2007/033490A1
A thin film is formed by depositing a wide bandgap semiconductor material on a substrate by oblique physical vapor deposition to form a thin film structure. The thin film structure is transparent, electrically conductive, and birefringent.  
WO/2007/026509A1
A variable resistance element comprises a variable resistor of strong correlation material sandwiched between two metal electrodes, and the electric resistance between the metal electrodes varies as a voltage pulse is applied between the...  
WO/2007/020832A1
[PROBLEMS] To provide a switching device reversibly and repetitively exhibiting two greatly different stable resistive characteristics and applicable to a highly-integrated nonvolatile memory. [MEANS FOR SOLVING PROBLEMS] A switching dev...  
WO/2007/018026A1
A variable resistor element, which comprises a first electrode, a second electrode and a variable resistor that exists in an area held between the first electrode and the second electrode and is changed in electric resistance when a volt...  
WO/2007/010746A1
Disclosed is a semiconductor storage comprising a variable resistor element obtained by arranging a variable resistive body between a first electrode and a second electrode. The electrical resistance of the variable resistor element is v...  
WO2006051186A3
The invention relates to a method for realizing a particle network comprising a particle depositing step, capable of self-organizing with a determined increment along a first direction, onto a substrate exhibiting a property that permits...  
WO2004111552A3
The present invention is a tunnel diode, in which the space between the emitter electrode and the collector electrode is occupied by a porous material which has a thickness less then the free mean free path of an electron in the porous m...  
WO/2006/115208A1
A first electrode layer includes first electrode wires (W1, W2) extending parallel. A state change layer is formed on the first electrode layer and includes state change bodies (60-11, 60-12, 60-21, 60-22) each exhibiting a diode charact...  
WO/2006/108291A1
A novel laminate is provided to improve the operating stability of thioaluminate based phosphors used in ac thick film dielectric electroluminescent displays. The novel structure comprises a rare earth activated alkaline earth thioalumin...  
WO/2006/109622A1
Disclosed is an electrical device comprising a first terminal (1), a second terminal (3) and a resistance variable thin film (2). The resistance variable thin film (2) is connected between the first terminal (1) and the second terminal (...  
WO/2006/101151A1
Provided is a material composition which allows the preparation of a nonvolatile memory element comprising a perovskite-type transition metal oxide having the CER effect by the use of three chemical elements. A nonvolatile memory element...  
WO2002103436A3
A novel thin planar latching switch device, generally based on a layer of polymeric switching materials sandwiched between two electrical planar conductors operative as electrodes. The device behaves as a bi-stable switch. Furthermore, t...  
WO/2006/085633A1
It is an object of the present invention to provide a nonvolatile memory device, in which additional writing is possible other than in manufacturing and forgery and the like due to rewriting can be prevented, and a semiconductor device h...  
WO2006047975A8
The aim of the invention is to create a coherent THz radiation source in the frequency range between 10 GHz and 50 THz, said radiation source being suitable for areas exceeding 100 ?m2, while the electric field in the semiconductor subst...  
WO/2006/077747A1
A nonvolatile semiconductor storage device capable of controlling the bidirectional currents and suppressing the parasitic currents flowing in non-selected memory cells in a cross-point array arrangement having memory cells each comprisi...  
WO/2006/075731A1
A switching element is provided with a first electrode (14) and a second electrode (15) arranged at a prescribed interval; a solid electrolytic layer (16) brought into contact with the first electrode (14) and the second electrode (15); ...  
WO/2006/075574A1
There are provided a resistance change element having an excellent heat resistance for suppressing degrading of resistance change characteristic upon temperature increase as compared to a conventional element and a manufacturing method o...  
WO2006034398A3
Systems and methods for manipulating nanostructures, such as nanospheres, nanodisks, nanowires, and nanotubes. The systems and methods permit the construction of nano-scale contacts, scaffolds, and motors using electric fields that do no...  
WO/2006/070681A1
Disclosed is a switching device comprising an ion conducting layer (40) for conducting metal ions, a first electrode (21) and a second electrode (31) arranged in contact with the ion conducting layer, a third electrode (35) capable of su...  
WO/2006/070698A1
Disclosed is a switching device comprising an ion conducting part (4) containing an ion conductor, a first electrode (1) arranged at a first gap from the ion conducting part (4), a second electrode (2) formed in contact with the ion cond...  
WO/2006/070693A1
A switching element comprises an ion conductive layer (4) where metal ions can migrate freely, a first electrode (1) in contact with the ion conductive layer (4), a second electrode (2) which is in contact with the ion conductive layer (...  
WO/2006/070683A1
A switching element comprising an ion conduction layer (40) capable of metal ion conduction, a first electrode (21) and a second electrode (31) provided so as to contact the ion conduction layer (40), and a third electrode (35) provided ...  
WO/2006/070773A1
A switching element comprising an ion conductor layer (40) containing oxides, a first electrode (21) and a second electrode (31) that are provided in contact with the ion conductor layer (40) and are connected by the deposition of metal ...  
WO/2006/051996A1
The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as...  
WO/2006/047975A1
The aim of the invention is to create a coherent THz radiation source in the frequency range between 10 GHz and 50 THz, said radiation source being suitable for areas exceeding 100 ┬Ám2, while the electric field in the semiconductor subs...  
WO/2006/030545A2  
WO/2006/028117A1
There is provided a resistance change element having configuration different from the conventional element and having an excellent resistance change characteristic. The resistance change element has at least two state having different el...  
WO/2006/028669A1
A method for monitoring the surface roughness of a metal, comprises impinging a laser beam onto the surface of a metal layer to induce the formation of a plasmon therein, and monitoring a current of decay electrons emitted by the plasmon.  
WO/2006/023513A1
An integrated plasmon detector includes a top layer of material adapted to generate a plasmon when excited by a beam of light incident onto a surface of the top layer, an interface layer joined to the top layer opposite from the surface ...  
WO/2006/022017A1
The present invention comprises a two-terminal switching element (1) that has two alternative stable resistance values for the value of a voltage applied thereto and that exhibits a first state in which the switching element (1) has a hi...  
WO2004114428A3
An electronic device free from variation of conductivity is provided. The electronic device (100) includes electrodes (2) and (3); and a metal conductor thin film (7) electrically connected to the electrodes (2) and (3). The metal conduc...  
WO2005109520A3
An electron transfer device is implemented in a structure which is readily capable of achieving charge transfer cycle frequencies in the range of several hundred MHz or more and which can be formed by conventional semiconductor integrate...  
WO/2005/114761A1
Disclosed is a switching device having two different stable resistances to the voltage applied between electrodes. In this switching device, a first electrode layer, an organic bistable material layer and a second electrode layer are seq...  
WO/2005/109520A2
An electron transfer device is implemented in a structure which is readily capable of achieving charge transfer cycle frequencies in the range of several hundred MHz or more and which can be formed by conventional semiconductor integrate...  
WO/2005/109519A1
In one aspect, the invention relates to a device for transporting charge carriers. The device includes two conducting regions connected by a nanochannel adapted for transporting a charge carrier. The nanochannel has a cross-sectional dim...  
WO/2005/098989A1
The invention relates to a method for producing electronic components consisting in carrying out a first anodisation of a carrier material (1) for forming at least one first pore (3) extending in a first direction in said carrier materia...  
WO/2005/093868A1
The present invention related to a depletion or enhancement mode metal transistor in which the channel regions of a transistor device comprises a thin film metal or metal composite layer formed over an insulating substrate.  
WO/2005/060001A1
Provided is a nonvolatile memory device including: a storage element; a switching element electrically connected to the storage element; and a plurality of lead wirings electrically connected to the switching element, all of which are ar...  

Matches 651 - 700 out of 8,465