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Matches 251 - 300 out of 8,470

Document Document Title
WO/2015/127207A1
A circuit including a first die, an integrated passive device and a second layer. The first die includes a first substrate and active devices. The integrated passive device includes a first layer, a second substrate and passive devices. ...  
WO/2015/125449A1
[Problem] To provide a low-cost variable-resistance element and a method for producing same. [Solution] The variable-resistance element (1) in one embodiment of the present invention is equipped with a bottom electrode layer (3), a top e...  
WO/2015/123146A1
Metal thermal grounds are used for dissipating heat from integrated-circuit resistors. The resistors may be formed using a front end of line layer, for example, a titanium-nitride layer. A metal region (e.g., in a first metal layer) is l...  
WO/2015/120375A1
Provided are space-efficient capacitors that have a higher quality factor than conventional designs and improve coupling of electrical energy from a through-glass via (TGV) to a dielectric. For example, provided is a TGV having a non-rec...  
WO/2015/112510A1
Some features pertain to an integrated device that includes a substrate, several metal layers coupled to the substrate, several dielectric layers coupled to the substrate, a first metal redistribution layer coupled to one of the metal la...  
WO/2015/108648A1
An integrated circuit device includes a first substrate supporting a pair of conductive interconnects, for example pillars. The device also includes a second substrate on the pair of conductive interconnects. The pair of conductive inter...  
WO/2015/107945A1
In one embodiment of the present invention, a switch element is provided with a first electrode, a second electrode disposed so as to face the first electrode, and a switch layer which is provided between the first electrode and second e...  
WO/2015/109137A1
A method for making a conductive film includes the steps of: depositing a conductive metal film on a substrate to form a metal-coated substrate; depositing a fiber pattern on the conductive metal film of the metal-coated substrate to for...  
WO/2015/105022A1
This organic electroluminescent device is configured by being provided with an organic electroluminescent element having a light emitting surface as one surface, and a drive power supply that is provided on the other surface of the organ...  
WO/2015/105123A1
Provided are a resonant tunneling diode element which is capable of ultrafast operation, has high manufacturability, and achieves low-loss and low-power consumption, and a non-volatile memory using the same. In the resonant tunneling dio...  
WO/2015/080770A1
A circuit includes a first finger capacitor (100) having a first bus line (110) coupled to a first plurality of finger elements (120) and a second bus line (105) coupled to a second plurality of finger elements (115). The first bus line ...  
WO/2015/076926A1
A methods for fabricating a capacitor structure includes fabricating polysilicon structures (PO) on a semiconductor substrate. The method further includes fabricating Ml to diffusion (MD) interconnects on the semiconductor substrate. The...  
WO/2015/069815A1
A tunable guard ring for improved circuit isolation is disclosed. In an exemplary embodiment, an apparatus includes a closed loop guard ring (512t) formed on an integrated circuit and magnetically coupled by a selected coupling factor to...  
WO/2015/068651A1
Provided is a nonvolatile three-terminal element operated by controlling the band gap of the electron state of a graphene material. A hydrogen ion-conducting or oxygen ion-conducting ion conductor (5) is disposed between graphene oxide o...  
WO/2015/063420A1
Structure with a metal-insulator-metal capacitor (1) comprising a substrate (2), a first insulating layer (14) placed electrically on the substrate (2), a lower electrode (6) placed on the first insulating layer (14), a structured metal ...  
WO/2015/059819A1
Provided is a small-area nonvolatile semiconductor storage device that constitutes one transistor/cell type memory using surrounding gate transistors (SGTs), i.e., vertical transistors. Disclosed is memory having data stored therein by c...  
WO/2014/195840A3
A method including forming a first metal wire in a first dielectric layer, the first metal wire including a first vertical side opposite from a second vertical side; and forming a second metal wire in a second dielectric layer above the ...  
WO/2015/040927A1
 Provided is a non-volatile memory device provided with: a first conductive layer (12a); a second conductive layer (14a); a ferroelectric film (16a) provided between the first conductive layer and the second conductive layer; and a p...  
WO/2015/034651A2
Ferroelectric capacitors used in ferroelectric random access memories (F-RAM) and methods for fabricating the same to reduce sidewall leakage are described. In one embodiment, the method includes depositing over a surface of a substrate,...  
WO/2015/031200A1
A MOS capacitor with improved linearity is disclosed. In an exemplary embodiment, an apparatus includes a main branch comprising a first signal path having a first capacitor pair connected in series with reversed polarities and a second ...  
WO/2014/165247A3
Capacitors and methods of making the same are disclosed herein. In one embodiment, a capacitor comprises a structure having first (102) and second (104) oppositely facing surfaces and a plurality of pores (206) each extending in a first ...  
WO/2015/005977A1
An integrated circuit device includes a substrate, and a first interlayer dielectric layer on the substrate that includes a first conductive layer and a second conductive layer. The integrated circuit device also includes a first conduct...  
WO/2015/002206A1
A semiconductor device of an embodiment of the present invention is provided with the following: a first electrically conductive layer; a second electrically conductive layer; and a ferrodielectric film or ferridielectric film of hafnium...  
WO/2014/208050A1
In order to provide a switching element having excellent operational stability and a high production yield, and a semiconductor device using the switching element, this switching element has: a non-volatile variable resistance element, w...  
WO/2014/204792A1
A metal capacitor with an inner first terminal (e.g., a positive terminal) and an outer second terminal (e.g., a negative terminal) is disclosed herein. In an exemplary design, an apparatus (e.g., an IC chip) includes a first conductive ...  
WO/2014/201488A1
The invention relates to a semiconductor component formed on a semiconductor substrate comprising at least one device layer and one insulating layer, said component being characterised by at least one semiconductor capacitor electrode in...  
WO/2014/201415A1
Capacitor structures capable of providing both low-voltage capacitors and high-voltage capacitors are described herein. In one embodiment, a capacitor structure comprises a low-voltage capacitor and a high-voltage capacitor. The low-volt...  
WO/2014/181492A1
The present invention applies to a semiconductor device having a plurality of cells arranged in a two-dimensional array. In the present invention, each cell (10) is provided with one or more transistors (101, 111), one or more resistance...  
WO/2014/081918A3
A multilayer dielectric film including a first dielectric layer made from a material having a first breakdown field strength and a second dielectric layer disposed on the first dielectric layer made from a material having a different bre...  
WO/2014/179462A1
A charge pump capacitor assembly (190) includes a charge pump capacitor (190) and a silicon substrate (198). The charge pump capacitor includes: a silicon-based charge pump capacitor dielectic layer (205), a first terminal (201) on a fir...  
WO/2014/170606A1
The invention relates to a ferroelectric memory device comprising at least one layer comprising a ferroelectric polymer, and at least two electrodes either side thereof, the ferroelectric polymer being of general formula P(VDF-X-Y), wher...  
WO/2014/165247A2
Capacitors and methods of making the same are disclosed herein. In one embodiment, a capacitor comprises a structure having first and second oppositely facing surfaces and a plurality of pores each extending in a first direction from the...  
WO/2014/158752A1
A method for forming a semiconductor structure having a transistor device with a control electrode (20) for controlling a flow of carriers between & first electrode (16) and a second electrode (18). A. passivation layer (24) is deposited...  
WO/2014/158956A1
Disclosed is a ferroelectric material (12) and methods for its use in capacitors. The ferroelectric material (12) comprises a polymer blend comprising a ferroelectric polymer (12a) and a dielectric polymer (12b) having a low dielectric c...  
WO/2014/150025A1
A particular device includes a replica circuit disposed above a dielectric substrate. The replica circuit includes a thin film transistor (TFT) configured to function as a variable capacitor or a variable resistor. The device further inc...  
WO/2014/143385A1
A circuit for implementing a gain stage in an integrated circuit is described. The circuit comprises a first inductor (206) formed in a first plurality of metal layers (402-408); a second inductor (212) formed in a second plurality of me...  
WO/2014/142040A1
Provided is an electronic element that functions as a switch or memory even if a metal nanoparticle is not used. The electronic element is provided with an electrode (5A) and another electrode (5B) that are arranged so as to have a nanog...  
WO/2014/137589A1
A particular metal-oxide-metal (MOM) capacitor device includes a conductive gate material coupled to a substrate. The MOM capacitor device further includes a first metal structure coupled to the conductive gate material. The MOM capacito...  
WO/2014/081917A3
A multilayer dielectric film including a first dielectric layer made from a material having a first breakdown field strength and a second dielectric layer disposed on the first dielectric layer made from a material having a different bre...  
WO/2014/133808A1
In a particular embodiment, a device includes a low-loss substrate, a first inductor structure, and an air-gap. The first inductor structure is between the low-loss substrate and a second inductor structure. The first inductor structure ...  
WO/2014/124796A1
The present invention relates to a two‑ply, dielectric layer for a thin‑layer capacitor, characterized in that a) the bottom, first ply (4) comprises a self‑assembled monolayer containing phosphorus oxo compounds and b) the top, se...  
WO/2014/124949A1
The invention relates to a radiation source (1), comprising at least one semiconductor substrate (10), on which at least two field-effect transistors (31, 32, 33, 34) are formed, which each contain a gate electrode (21, 22, 23, 24), a so...  
WO/2014/123790A1
Some novel features pertain to an inductor structure that includes a first inductor winding, a second inductor winding and a filler. The first inductor winding includes an electrically conductive material. The second inductor winding inc...  
WO/2014/119537A1
Decrease in the width of a bit line caused resistance to sharply increase. In the present invention, a semiconductor device is equipped with: a common source line; a common bit line; multiple memory cells which are arranged in multiple r...  
WO/2014/083195A4
A solid-state microstructure (10) comprising a substrate (1), an intermediate layer (2) arranged on said substrate (1), said intermediate layer (2) comprising lanthanide oxynitrate and a thin-film layer (3) arranged on said intermediate ...  
WO/2014/112365A1
In switching elements each using a two-terminal-type variable resistance element, improper writing or any improper operation is often caused and the reliability of the switching elements cannot be improved easily. A switching element acc...  
WO/2014/103691A1
Provided are a storage element and a storage device, wherein resistance retention performance during low-current writing can be improved. A storage element of the present invention comprises a first electrode, a storage layer and a secon...  
WO/2014/103577A1
Provided is a storage apparatus provided with a plurality of storage elements (40) having storage layers (41) comprising a plurality of layers (20, 30) and electrodes (10), one layer (20) among the plurality of layers being extended in a...  
WO/2014/087784A1
Provided are a memory element and a memory device which can attain an improvement in the retention of an intermediate resistance in writing with a low current. Also provided are a memory element and a memory device which can attain a red...  
WO/2014/085209A1
Disclosed is a system including first and second plurality of conductors (M2...M6) stacked along a first axis on a substrate. The first axis is perpendicular to a plane on which the substrate lies. In the first and second plurality of co...  

Matches 251 - 300 out of 8,470