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Matches 351 - 400 out of 8,458

Document Document Title
WO/2013/074546A8
Provided is a device comprising a channel through and defined by a plurality of layers surrounding the channel, the channel connecting a first and a second chambers separated by the plurality of layers, wherein the plurality of layers co...  
WO/2013/094169A1
This non-volatile storage device is equipped with a memory cell array (10) that has multiple memory cells (11), each of said memory cells comprising a variable resistance component (141) and a first current control component (142) The de...  
WO/2013/089940A1
A nonvolatile resistive memory element has a novel variable resistance layer that includes a metal nitride, a metal oxide-nitride, a two-metal oxide-nitride, or a multilayer stack thereof. One method of forming the novel variable resista...  
WO/2013/085815A1
A memory cell is provided that includes a steering element (14) and a metal-insulator-metal ("MIM") stack (30g) coupled in series with the steering element. The MIM stack includes a first dielectric material layer (12a) a second dielectr...  
WO/2013/080496A1
Memory cells (51) are formed at each intersection between X-axis bit lines (53a and 53b) and Y-axis word lines (52a) formed in a plurality of layers. In a multi-layer crosspoint structure in which there is a plurality of vertical array s...  
WO/2013/080452A1
This non-volatile storage element is equipped with: a first electrode (103); a second electrode (106); and a variable resistance layer (104) that comprises metal oxides and is formed between the first electrode (103) and the second elect...  
WO/2013/075209A1
Methods for the aqueous oxidation of metallic films are described. For example, a film of hafnium metal on a silicon substrate can be oxidized to hafnium dioxide using hot deionized water. Methods for fabricating electrical components su...  
WO/2013/078068A1
Passive devices such as resistors and capacitors are provided for a 3D non-volatile memory device. In a peripheral area of a substrate, a passive device includes alternating layers of a dielectric (L0, L2,...,L12) such as oxide and a con...  
WO/2013/073187A1
A method for manufacturing a variable resistance nonvolatile storage device in which nonvolatile storage element layers are laminated by repeating a plurality of times steps (S100, S200, …) of forming a nonvolatile storage element laye...  
WO/2013/074546A1
Provided is a device comprising a channel through and defined by a plurality of layers surrounding the channel, the channel connecting a first and a second chambers separated by the plurality of layers, wherein the plurality of layers co...  
WO/2013/074298A1
A spiral inductor (300) is formed on a semiconductor substrate (102). One or more insulating layers (104, 303) are disposed on a first surface of the semiconductor substrate. A spiral structure (106) is formed of a first conductive mater...  
WO/2013/071178A1
A method for metal semiconductor wafer bonding for high-Q capacitors or varactors is provided. An exemplary capacitor (210) includes a first plate (310) formed on a glass substrate (305), a second plate (330), and a dielectric layer (315...  
WO/2013/065093A1
The purpose of the invention is to prevent the electrodes of a quantum battery capable of being reduced in cost and operating stably from being oxidized by charging by causing an n-type metal oxide semiconductor to have a photo-excited s...  
WO/2013/061559A1
A nonvolatile storage cell comprises a first electrode (103), a second electrode (106) and a variable resistance layer (104). The variable resistance layer (104) includes: a first oxide layer (104a) composed of a metal oxide with nonstoi...  
WO/2013/057912A1
A non-volatile storage element, wherein when the voltage values of electric pulses have the relationship of V2>V1>0V>V3>V4 and the resistance values of a variable resistance layer have the relationship of R3>R2>R4>R1, the variable resist...  
WO/2013/058044A1
[Problem] To provide a strongly correlated non-volatile memory device which undergoes a phase transition caused by an electrical means and exhibits a non-volatile switching function. [Solution] An embodiment of the present invention prov...  
WO/2013/057920A1
A non-volatile storage element is provided with a first wiring (102), a first plug (104) which is arranged on and electrically connected with the first wiring (102), an alteration prevention layer (105) which covers the entire region of ...  
WO/2013/054506A1
The method includes: a step of forming a lower electrode (105) on top of a substrate (100); a step of forming a first resistance change layer (106a) constituted by a first metallic oxide on the lower electrode (105); a step of forming a ...  
WO/2013/054515A1
Disclosed is a non-volatile semiconductor storage device comprising a resistance change element wherein parasitic resistance between a lower electrode constituting a resistance change element and a resistance change layer is reduced. Thi...  
WO/2013/051267A1
A nonvolatile storage device is provided with a first electrode (103), a second electrode (106), and a variable-resistance layer (104). The variable-resistance layer (104) comprises: a first oxide layer (104a) comprising a first metallic...  
WO/2013/038647A1
A non-volatile storage element (20) comprising: a first electrode (105); a second electrode (107); a variable resistance layer (106) interposed between the first electrode (105) and the second electrode (107), and configured by laminatin...  
WO/2013/038641A1
This invention includes: a step (c) for forming a first electroconductive film (105') on a substrate; steps (d, e) for forming a first metal oxide layer (106x"), a second metal oxide layer (106y") having a different level of oxygen defic...  
WO/2013/036306A1
An interdigitated capacitor having digits of varying width is disclosed. One embodiment of a capacitor (100) includes a first plurality of conductive digits (110) and a second plurality of conductive digits (110) positioned in an interlo...  
WO/2013/021682A1
A variable resistance memory according to an embodiment includes: a first wiring; a second wiring provided above the first wiring and intersecting with the first wiring; a third wiring provided above the second wiring and intersecting wi...  
WO/2013/021674A1
A variable resistance memory according to an embodiment includes: a first wiring; a second wiring provided above the first wiring and intersecting with the first wiring; a third wiring provided above the second wiring and intersecting wi...  
WO/2013/018842A1
Provided are: a semiconductor device which is capable of reducing the processes or reducing the area of a variable resistance element as much as possible; and a method for manufacturing the semiconductor device. A semiconductor device, w...  
WO/2013/017131A2
The invention describes the production and the design of an integrated memory component, comprising at least one rectifying bottom contact and a top contact and a ferroelectric or piezoelectric layer as a conductive channel between the c...  
WO/2013/012450A1
An inductor in an integrated circuit structure (302) can include a first through silicon via (TSV) (305) comprising a first end (335) and a second end; a second TSV (310) comprising a first end and a second end; a first bottom (340) form...  
WO/2013/001742A1
Provided is a nonvolatile semiconductor storage element that is provided with: a bidirectional current control element, which can ensure a sufficient on-current even if the current control element is microminiaturized, and has a high on/...  
WO/2012/176452A1
Provided is a semiconductor recording device in which even when the ambient temperature has changed it is easy to guarantee a read-out margin. The device is provided with: a memory cell (901) which includes a first variable resistance el...  
WO/2012/172898A1
[Problem] To provide a strongly correlated oxide field effect element that exhibits a switching function with phase transition by electrical means. [Means for solution] Disclosed is a strongly correlated oxide field effect element (100) ...  
WO/2012/170148A1
An integrated circuit (IC) includes a first layer (310) of a conducting material, a second layer (302) of an insulating material, where the second layer has a first side arranged adjacent to the first layer, and a second side, as well as...  
WO/2012/169198A1
A nonvolatile storage element (60) according to the present invention is provided with a current control element (50) having a bidirectional rectifying characteristic with respect to an applied voltage, and a resistance changing element ...  
WO/2012/169195A1
[Problem] To provide a variable resistance element wherein a forming process is unnecessary and it is possible to reduce the power consumption of the element and to miniaturize same. To also provide a method for producing said variable r...  
WO/2012/169194A1
[Problem] To provide a method and device for producing a variable resistance element whereby it is possible to precisely form a metal oxide layer exhibiting a desired resistivity. [Solution] This method for producing a variable resistanc...  
WO/2012/165018A1
According to one embodiment, a nonvolatile resistance change element includes a first electrode, a second electrode, a semiconductor layer and a first layer. The first electrode includes at least one of Ag, Ni, Co, Al, Zn, Ti, and Cu. Th...  
WO/2012/158593A2
A method for fabricating a Ill-nitride based semiconductor device, including (a) growing one or more buffer layers on or above a semi-polar or non-polar GaN substrate, wherein the buffer layers are semi-polar or non-polar Ill-nitride buf...  
WO/2012/153818A1
A resistance-changing element which comprise a first electrode, a second electrode, and an ion-conducting layer disposed between the first electrode and the second electrode and which changes in resistance when metal ions supplied from t...  
WO/2012/140971A1
Provided is a thin film with which changes in resistance due to charge- and orbital-ordering of perovskite-type manganese oxide are fully realized. An embodiment of the present invention provides a perovskite-type manganese oxide thin fi...  
WO/2012/140887A1
A method of manufacturing a variable-resistance type nonvolatile storage element of the present invention comprises: a process for forming a lower electrode layer (2) on a substrate (11); a process for forming a variable-resistance layer...  
WO/2012/127542A1
An organic molecular memory for controlling a current flowing through a memory cell and achieving stable operation and high degree of reliability is provided. The organic molecular memory includes a first electrode, a second electrode ma...  
WO/2012/127735A1
This variable resistance element is formed by sandwiching between a pair electrodes a metal oxide layer the resistance of which is varied, and the metal oxide layer comprises a pair of variable resistance layers that bring about resistan...  
WO/2012/127861A1
The purpose of the present invention is to provide a method for manufacturing a variable resistance nonvolatile storage device, which has good consistency with a dual damascene process that is suitable for the formation of fine copper wi...  
WO/2012/128017A1
A method for writing to a resistive memory device having a plurality of resistive memory elements, in which a first process and a second process are performed in the stated order in a writing process in which a first variable resistor ch...  
WO/2012/127718A1
According to one embodiment, a resistance-change memory includes a memory cell and a control circuit. The memory cell comprises first and second electrodes, and a variable resistance layer disposed between the first electrode and the sec...  
WO/2012/127863A1
An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecula...  
WO/2012/124314A1
Provided are a non-volatile storage element drive method and a non-volatile storage device that are capable of achieving a stable storage operation. The drive method is for a non-volatile storage element, said non-volatile storage elemen...  
WO/2012/120893A1
This method for producing a non-volatile recording device (10) contains: a step for forming a tantalum oxide material layer (106aF) configured from an oxygen-deficient transition metal oxide; a step for forming a tantalum oxide material ...  
WO/2012/117467A1
This reconfigurable circuit (10) is provided with: a switch element group wherein switch elements (1) wherein an on state and off state can be rewritten in accordance with resistance state are disposed; and a configuration controller (60...  
WO/2012/114744A1
A non-volatile storage element manufacturing method comprises: a step of forming a first lower part electrode layer (108), an electric current control layer (109), and a first upper part electrode layer (110), and, upon the first upper p...  

Matches 351 - 400 out of 8,458