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Matches 401 - 450 out of 8,465

Document Document Title
WO/2012/111205A1
According to one embodiment, a variable resistance layer 2 includes a semiconductor element. A resistance change is reversibly possible in the variable resistance layer according to supply and collection of a metal element of a second el...  
WO/2012/108151A1
A nonvolatile latch circuit (100) according to the present invention is formed by connecting both the outputs of an inverter circuit (20) and an inverter circuit (21) cross-coupled to each other through a series circuit formed by sequent...  
WO/2012/108185A1
A non-volatile storage element drive method comprises: an initialization step of applying an initialization voltage pulse to a series circuit wherein a load resistor (5) having a first resistance value is connected in series to a resista...  
WO/2012/105139A1
The present invention has an ion-conducting layer (11), and a first electrode (21) and a second electrode (22) respectively formed on front and reverse surfaces of the ion-conducting layer (11). The first electrode (21) is formed from a ...  
WO/2012/105225A1
Provided is a method for manufacturing a variable resistance nonvolatile storage device such that a metal electrode that forms a lower electrode on the bottom of a memory cell hole can be formed reliably without having electrical conduct...  
WO/2012/105232A1
Provided is a data read method that, in a variable-resistance non-volatile recording element, is difficult to be affected by the phenomenon of resistance value fluctuations during data reading. The data read method of a variable-resistan...  
WO/2012/105214A1
Provided is a method for manufacturing a variable resistance element that can improve the endurance characteristics of nonvolatile storage. This method for manufacturing a variable resistance element (112) comprises: a step (A) for formi...  
WO/2012/102025A1
A nonvolatile memory device (100) comprises the following: a nonvolatile memory element (101) having a first electrode, a second electrode, and a resistance change layer that is disposed between the first electrode and the second electro...  
WO/2012/098879A1
A resistance change element has a first electrode (107), a second electrode (105), and a resistance change layer (106) provided interposed between the first and second electrodes (107, 105) so as to be in contact with the first and secon...  
WO/2012/090404A1
A nonvolatile storage element of the present invention is provided with a variable resistance element (104a), which has: a first electrode layer (103); a second electrode layer (105); and a variable resistance layer (104), which is dispo...  
WO/2012/086169A1
[Problem] To provide a method of manufacturing a dielectric device and an ashing method, which are capable of minimizing resist residue. [Solution] In the aforementioned ashing method, a base material, having its surface etched with a pl...  
WO/2012/081248A1
A nonvolatile memory device comprises: a first electrode wiring (151) formed in a strip shape; a third interlayer insulating layer (16); a variable resistance layer which is a laminated structure that is formed on the region covering the...  
WO/2012/077518A1
[Problem] To provide a perovskite manganese oxide thin film that: (1) is capable of primary phase transition; and (2) is ordered at the A site. [Solution] The present invention provides a perovskite manganese oxide thin film (2) that inc...  
WO/2012/077517A1
[Problem] To increase the transition temperature of a perovskite manganese oxide thin film to above that of the bulk thereof. [Solution] An embodiment of the present invention provides a perovskite manganese oxide thin film (2) which is ...  
WO/2012/073471A1
The present invention provides a nonvolatile memory element comprising a variable resistance layer having a layered structure, wherein the variable resistance layer has a high resistance change ratio, and the present invention also provi...  
WO/2012/074131A1
A semiconductor device capable of being produced with few steps and a production method therefor are provided. The semiconductor device comprises: a variable resistance element; a first interlayer insulating film; a second interlayer ins...  
WO/2012/073503A1
A non-volatile storage element (10) according to the present invention is provided with: a first metal wire (103); a plug (107) which is formed on the first metal wire (103) and is connected to the first metal wire (103); a layered body ...  
WO/2012/070238A1
This nonvolatile memory element is provided with a resistance change layer (116) which is interposed between a bottom electrode (105) and an upper electrode (107) and in which the resistance value reversibly varies on the basis of electr...  
WO/2012/070551A1
Provided are a device for manufacturing and a method for manufacturing a memory element having a metal oxide layer with etching resistance. Anisotropic etching is performed by the metal oxide layer (14) reacting with etching gas containi...  
WO/2012/070236A1
A non-volatile storage device in which the bit lines and word lines of a memory cell array can be wired at minimum intervals is provided. Basic array planes (0 to 3) of the non-volatile storage device comprise: first via groups (121 to 1...  
WO/2012/066787A1
Provided is a nonvolatile storage element with which deterioration of the oxygen concentration profile of a variable resistance layer due to the thermal budget can be suppressed, and which is capable of stable operation at a low voltage;...  
WO/2012/066786A1
Provided are a method for manufacturing a variable resistance-type nonvolatile semiconductor storage element, and a nonvolatile semiconductor storage element that is capable of low-voltage high-speed operation during initial breakdown an...  
WO/2012/064711A2
A process for converting feedstock triglycerides to lube basestocks. The process has the steps of (a) metathesizing the feedstock triglycerides with ethylene in the presence of a metathesis catalyst to form alpha olefins and medium-chain...  
WO/2012/063495A1
The purpose of the present invention is to provide a process for manufacturing a resistance-variable non-volatile semiconductor storage element which has a reduced initial braking voltage, can be operated at a high velocity, and does not...  
WO/2012/056689A1
A nonvolatile memory device (800) comprises a resistance changing nonvolatile memory element (100), and a control circuit (810). The control circuit (810) determines whether or not the resistance value of the nonvolatile memory element (...  
WO/2012/049789A1
In the present invention, a select transistor (20) comprising an N-type MISFET has N-type source/drain regions (4) and (5) which are both provided on the upper part of a semiconductor substrate (1) with a space therebetween, a channel re...  
WO/2012/049865A1
According to one embodiment, a first electrode, a second electrode, and a variable resistance layer are provided. The variable resistance layer is arranged between the first electrode and the second electrode and contains a polycrystalli...  
WO/2012/046454A1
Provided are a variable resistance nonvolatile storage element, which stably varies resistance with a low voltage, is suitable for a capacity increase, and has excellent reliability, and a method for manufacturing the variable resistance...  
WO/2012/043502A1
Provided is a semiconductor device comprising: a unit element having a first switch and a second switch that include a variable resistance layer having a resistance state that varies in accordance with the polarity of the applied voltage...  
WO/2012/042828A1
Provided is a memory element, wherein deterioration of and damages to a diode can be prevented even when miniaturizing the memory element. A memory element (100) of the present invention is provided with: a substrate (10); a plurality of...  
WO/2012/042897A1
This method for manufacturing a variable resistance non-volatile memory element comprises: a step for forming a first electrode (2) on a substrate (1); a step for forming a first metal oxide layer (31) having a prescribed oxygen content ...  
WO/2012/042866A1
A resistance change non-volatile memory element has a first electrode, a second electrode, and a transition metal-oxide film layer interposed between the first electrode and the second electrode. In the initial state of this resistance c...  
WO/2012/039284A1
The present invention addresses the problem of providing a three-terminal switch (electrochemical transistor) which implements a sharp on/off operation. A source electrode and a drain electrode are disposed side by side with an insulator...  
WO/2012/035786A1
A current control element (100) that is formed so as to cover the bottom opening (105) of a via hole (104) formed in an interlayer insulating layer (102) includes: a corrosion inhibiting layer (106) formed at the bottom of the bottom ope...  
WO/2012/026506A1
In a drive method that enables more stable switching operations, a memory element (10) is equipped with an insulating substrate (1) provided with a first electrode (2), a second electrode (3), and an electrode gap portion (4) for generat...  
WO/2012/024793A1
The present invention provides an apparatus and method for manipulating plasmons. The apparatus comprises a support structure and two or more plasmon-responsive elements. The plasmon-responsive elements are disposed adjacent the support ...  
WO/2012/026507A1
In order to carry out switching operations with greater stability this drive method for a memory element (10) is characterised by applying current pulses to the memory element, by means of a constant current circuit, when switching from ...  
WO/2012/023269A1
Provided are a nonvolatile storage device, wherein variance of an initial breakdown voltage between nonvolatile storage elements is suppressed and deterioration of yield is eliminated, and a method for manufacturing the nonvolatile stora...  
WO/2012/014447A1
In each of the steps of forming a first resistance change layer (18a) and of forming a second resistance change layer (18b), a cycle is executed once or a plurality of times, the cycle including: a first step of introducing a source gas ...  
WO/2012/008160A1
Provided is a nonvolatile storage device (10) which has a reduced initiation voltage and can have a low driving voltage. The nonvolatile storage device (10) comprises a semiconductor substrate (100), a first electrode layer (105) formed ...  
WO/2012/005003A1
A nonvolatile semiconductor memory device comprises: a plurality of memory cell holes (101) formed at respective cross points between a plurality of stripe-shaped first interconnections (10) and a plurality of stripe-shaped second interc...  
WO/2012/001978A1
Disclosed is a method for manufacturing a variable resistance nonvolatile memory element wherein variation in the resistance can be suppressed. Specifically disclosed is a method for manufacturing a variable resistance nonvolatile memory...  
WO/2012/001944A1
Disclosed is a drive method for a non-volatile memory device, which includes: a step (S101) for detecting a surplus low resistance cell in a plurality of memory cells (11); a step (S103) for changing the resistance value of a load resist...  
WO/2012/001993A1
A variable resistance non-volatile storage element (10) is formed by layering a first electrode (101) formed from a material having a metal as the main component, a variable resistance layer (102) having a reversibly changeable resistanc...  
WO/2012/001960A1
Disclosed is a nonvolatile memory cell array which is provided with: a laminated structure wherein interlayer insulating films (16) and laminated bodies (21), each of which is composed of a first conductive layer (13), a semiconductor la...  
WO/2011/161936A1
Disclosed is a method for manufacturing a variable resistance element, which includes: processes (1000 to 1004) for forming conductive plugs in an interlayer insulation film on a substrate; a process (1005) for leveling the top surface o...  
WO/2011/158691A1
Provided is a variable resistance element that makes it possible to reduce forming voltage while maintaining reliability. A variable resistance element as recited in one embodiment is equipped with a first electrode, a second electrode, ...  
WO/2011/158821A1
The present semiconductor device has multilayer wiring, first electrodes (5) and second electrodes (10a, 10b) provided between the multilayer wiring, and two resistance variable resistance elements (22a, 22b) containing variable resistan...  
WO/2011/155210A1
Disclosed are: a non-volatile memory element in which the voltage of an electric pulse necessary for initial brake down can be reduced and the fluctuation in resistivity values can also be reduced; and a non-volatile memory device equipp...  
WO/2011/152061A1
Provided is a multilayer cross-point variable-resistance nonvolatile storage device made up of memory cells that are formed in the same direction such that the characteristics in each layer become stable. The memory cells (51) are formed...  

Matches 401 - 450 out of 8,465