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WO/2012/059074 |
The high-voltage switch (10; 20) has one or more high-voltage transistors (2; 2.1, 2.2), a cooling substrate (1) which is manufactured from an electrically insulating material and on or through which a cooling medium can flow, wherein th...
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WO/2012/060053 |
The present invention is an adhesive for optical semiconductor devices that is used for adhering and hardening an optical semiconductor element to an element attachment part, after the optical semiconductor element, which is cut from a w...
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WO/2012/058742 |
A VCSEG-DFB laser, fully compatible with MGVI design and manufacturing methodologies, for single growth monolithic integration in multi- functional PICs is presented. It comprises a laser PIN structure, in mesa form, etched from upper em...
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WO/2012/061166 |
Long semiconductor laser cavities are placed in relative short length chips through the use of total internal reflection (TIR) surfaces formed through etched facets. In one embodiment, a laser cavity is formed along the perimeter edges o...
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WO/2012/060299 |
Disclosed is a group III nitride semiconductor device having a p-type gallium nitride-based semiconductor layer with reduced oxygen concentration. The group III nitride semiconductor element (11) is provided with a substrate (13), an n-t...
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WO/2012/059864 |
The present invention relates to an optical clement for VECSELs or VECSEL arrays. The optical element is formed of a substrate (200) which is transparent at least in a wavelength region of optical radiation. A first interface of the- sub...
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WO/2012/059850 |
The present invention relates to a VCSEL device comprising an array of VCSELs, a geometrical shape of an emission area (2) of at least some of said VCSELs being non-circular. At least some of said VCSELs having said non-circular emission...
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WO/2012/059848 |
A device includes a substrate and a Ill-nitride structure grown on the substrate, the Ill-nitride structure comprising a light emitting layer disposed between an n-type region and a p-type region. The substrate is a RAO3(MO)n, where R is...
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WO/2012/057788 |
A small-mode-volume, vertical-cavity, surface-emitting laser (VCSEL) (101). The VCSEL (101) includes an active structure (102) to emit light (118) upon injection of carriers, and two reflecting structures (103) at least one of which is a...
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WO/2012/056648 |
Provided is a semiconductor substrate for a vertical-cavity surface-emitting laser, which comprises a p-type crystalline layer, and wherein the p-type crystalline layer is composed of a 3-5 group compound semiconductor, comprises carbon ...
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WO/2012/058264 |
A method of fabricating a substrate for a semipolar Ill-nitride device, comprising patterning and forming one or more mesas on a surface of a semipolar III- nitride substrate or epilayer, thereby forming a patterned surface of the semipo...
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WO/2012/058262 |
A method for fabricating a semi-polar Ill-nitride substrate for semi-polar III- nitride device layers, comprising providing a vicinal surface of the Ill-nitride substrate, so that growth of relaxed heteroepitaxial Ill-nitride device laye...
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WO/2012/057731 |
An improved photonics module includes a Silicon motherboard having a plurality of v- grooves that collimate and optically align a laser diode emission is held within an enclosure that includes two or more positioning portions that locate...
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WO/2012/055626 |
The invention relates to a laser ignition plug (100) for an internal combustion engine (10), having a laser device (110) for generating laser impulses (24). According to the invention, the laser device (110) comprises a plurality of surf...
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WO/2012/053245 |
This light source device has a light source unit provided with a LD element (1) for outputting laser light having a fixed polarization orientation and a lens (2) that condenses laser light output by the LD element (1) and a phosphor laye...
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WO/2012/053070 |
Provided is a laser light source module, which is provided with a plurality of laser light sources, a synthesizing element, a light receiving element, a case section, and a sealing section. The synthesizing element overlaps laser beams o...
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WO/2012/048965 |
The invention relates to a laser-ignition system (27) for an internal combustion engine (10), said system comprising a laser system (26) with a laser-active solid (44) and, preferably passive, Q-switching (46), the laser-ignition system ...
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WO/2012/049090 |
An embodiment of the invention relates to a cascade semiconductor light source comprising: a first block of cascades and a first contact region coupled to said first cascade, the first contact region being capable of injecting carriers i...
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WO/2012/049272 |
A phase noise detection apparatus comprises a laser beam, an optical resonator coupled to the laser beam at a coupling point and a photodetector receiving light from the laser beam. The laser beam is preferably guided in a waveguide. The...
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WO/2012/048665 |
A network apparatus comprising an optical gain medium, a wavelength division multiplexing (WDM) filter coupled to the optical gain medium, and a Faraday Rotator Mirror (FRM) coupled to the WDM, and wherein the optical gain medium, the WD...
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WO/2012/050146 |
The present invention provides a surface emitting laser that provides a sufficient optical output and is suitable as a light source intended for electrophotographic apparatuses, and a surface-emitting-laser array and an image forming app...
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WO/2012/050132 |
A liquid cooling heat sink (1) is attached to a semiconductor laser module (2). A molybdenum reinforcing body (3) is affixed to the surface on the opposite side from the attachment surface for the semiconductor laser module (2). The moly...
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WO/2012/048962 |
The invention relates to an edge-emitting semiconductor laser diode (1) comprising an epitactic semiconductor layer stack (2) and a planarization layer (3). The semiconductor layer stack (2) comprises a main body (2a) and a ridge wavegui...
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WO/2012/046420 |
An electronic element is provided with a semiconductor multilayer structure constituted of a periodic structure of a first semiconductor layer and a second semiconductor layer. In at least a part of the semiconductor multilayer structure...
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WO/2012/045619 |
The invention provides a laser module having a cooling means (3), which has a first accommodation region (21, 22) with a first contact area (23, 24, 25), having a laser diode unit (2), which has a laser diode (7) and also a second contac...
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WO/2012/045685 |
The invention relates to an edge-emitting semiconductor laser comprising - a semiconductor body (1) which comprises at least two stripe emitters (10) that are arranged adjacent to each other in the transverse direction (101), each stripe...
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WO/2012/046079 |
A semiconductor laser device is described comprising an optical emitter and a wavelength locking mechanism arranged to control the temperature of the optical emitter in order to maintain a desired optical wavelength. Also described is a ...
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WO/2012/047170 |
Method for calibrating and tuning a part wise monotonically, continuously tunable semiconductorlaser comprising at least a phase section and at least a first Bragg reflector section, through which sections a phase current and a first ref...
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WO/2012/047169 |
Method for calibrating a tunable semiconductor laser (121;10) comprising at least a phase section (12) and at least a first Bragg reflector section (14a,14b), through which sections a phase current and a first reflector current, respecti...
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WO/2012/046715 |
A luminescent material comprises a transition metal complex constituting a central metal of Ir, Os or Pt, and having at least one neutral or monoanionic, and monodentate, bidentate or tridentate carbene ligand containing boron atoms in a...
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WO/2012/046639 |
The present invention relates to a semiconductor laser comprising: an active layer (18) having a band gap energy less than the band gap energy of GaAs in at least a portion thereof, the active layer (18) being provided on a substrate (10...
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WO/2012/043623 |
An element containing package according to one embodiment of the present invention comprises: a base body having on the upper surface thereof a placement region on which a semiconductor element is placed; a frame body disposed on the upp...
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WO/2012/042469 |
Optical wavelength converter comprising a quantum cascade laser, exhibiting an active region (RA) formed by an asymmetric stack of quantum wells, so as to generate a first electromagnetic radiation, characterized in that it also comprise...
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WO/2012/041850 |
A monolithic integrated structure comprising a buried heterostructure semiconductor optical amplifier ( 2 ) and a deep ridge optical receiver comprising such structure are disclosed.
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WO/2012/043262 |
[Problem] To provide a solid-state light-source device comprising a laser light source which cannot readily be employed for an inappropriate purpose and can be removed for maintenance, and also to provide a projection-type video display ...
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WO/2012/041678 |
The invention relates to a semiconductor laser assembly (100) comprising at least one semiconductor laser (110), which is designed to emit laser radiation (L) through an outlet area (112). According to the invention, at least one region ...
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WO/2012/042685 |
A semiconductor light emitting device (1) comprises: a semiconductor light emitting element (3); a package (10) that holds the semiconductor light emitting element (3); and a metal cover (21) that is affixed to the package (10) and encap...
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WO/2012/041776 |
The present document relates to a photonic integrated circuit (PIC) for multiplexing optical signals in a wavelength division multiplexing (WDM) system. In particular, the document relates to a method and system for reducing the size of ...
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WO/2012/042249 |
There is described a laser assembly for providing light at a switchable output wavelength. The assembly comprises first and second tuneable lasers (101, 201), each configurable to emit light at a laser wavelength chosen from a range of w...
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WO/2012/039997 |
Group III nitride-based laser diodes comprise an n-side cladding layer formed of n-doped (Al,In)GaN, an n-side waveguide layer formed of n-doped (Al)InGaN, an active region, a p-side waveguide layer formed of p-doped (Al)InGaN, and a p-s...
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WO/2012/038303 |
The invention relates to a housing (1) for an optoelectronic semiconductor component (10), comprising a housing body (2) having a mounting plane (20) and a lead frame (3) with a first connecting lead (31) and a second connecting lead (32...
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WO/2012/038304 |
The invention relates to a housing (1) for an optoelectronic semiconductor component (10). The housing (1) comprises a housing body (2), a first connecting lead (31) and a second connecting lead (32), wherein the first connecting lead (3...
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WO/2012/039515 |
An optical module with some OSAs and a fiber unit is disclosed. The fiber unit includes a stub and a flange. A portion of the stub extrudes from the flange; while, the housing of the module that assembles the OSAs includes a pocket with ...
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WO/2012/034563 |
The present invention relates to an apparatus comprising a diode laser (10) providing radiation in a first wavelength interval, a radiation conversion unit (12) having an input and an output, the radiation converter configured to receive...
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WO/2012/035621 |
Provided is a laser structure for reducing the influence of a concavoconvex structure on laser characteristics when the ELO method is applied to photonic crystal surface-emitting laser. The laser structure includes a first layer, a secon...
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WO/2012/034972 |
The present invention relates to a laser diode with high efficiency and high eye safety. The object of the present invention is to specify a light source with high efficiency and high eye safety at the same time. For this purpose, the ac...
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WO/2012/036300 |
Provided is a two-dimensional photonic crystal surface emitting laser that enables easy laser oscillation with two-dimensionally symmetric intensity distribution, using a photonic crystal of a lattice structure having different lengths o...
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WO/2012/035307 |
A mode locked semiconductor disk laser with an output beam having an ultra¬ short pulse length which provides the incident beam to a non linear microscope. The wavelength of the beam is at or near the action cross section maximum absorp...
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WO/2012/035620 |
Provided is a laser structure for reducing the effects of an irregular structure on laser properties when ELO is applied to a photonic-crystal surface-emitting laser. A mask structure is fashioned to a height at which a difference exists...
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WO/2012/033105 |
A laser device comprises: a plurality of oscillation means for respectively oscillating a plurality of laser beams which are continuous and have differing frequencies; a wave combining means for wave combining, at a prescribed location, ...
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