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Patent Searching and Data


Matches 551 - 600 out of 17,892

Document Document Title
WO/2003/001666A1
A surface acoustic wave device, wherein comb electrodes (2) and reflector electrodes (3) are surrounded by a plurality of auxiliary electrodes (6a, 6b) electrically independent of each other and having different widths according to the p...  
WO2002095085A8
The invention relates to a method for producing a layer with a locally adapted or predefined layer thickness profile. Said method comprises the following steps: a) at least one layer (7) is applied to a substrate, b) a removal profile is...  
WO2002054592A3
An acoustic wave filter (10) and a method (30) of forming the acoustic wave filter (10) are disclosed. The acoustic wave filter includes a substrate (20) supporting a first die (18) and a second die (18). The first die (18) and second di...  
WO2002081365A3
A first type of MEMS resonator (1400) adapted to be fabricated on a SOI wafer (200) is provided. A second type of MEMS resonator that is fabricated using deep trench etching and occupies a small area of a semiconductor chip is taught. Ov...  
WO/2002/095085A1
The invention relates to a method for producing a layer with a locally adapted or predefined layer thickness profile. Said method comprises the following steps: a) at least one layer (7) is applied to a substrate, b) a removal profile is...  
WO/2002/095939A1
A resonator device comprises a piezoelectric resonator (10) with a detuning layer sequence (52), arranged on the piezoelectric resonator (10). The detuning layer sequence (52) comprises at least one first layer (52A) with a high acoustic...  
WO/2002/093549A1
A high performance thin film acoustic resonator with excellent electromechanical coupling factor and acoustic quality factor, wherein a recess (52) is formed in a substrate obtained by forming a silicon oxide thin layer (53) on the surfa...  
WO/2002/093738A2
A nanomechanical actuator/oscillator system (10) comprises a substrate (12) having a first electrode (14) and a second electrode (16) and a nanobimorph (18) which includes first and second self-assembled nanotubes (20, 22). System (10) i...  
WO/2002/087080A1
A surface acoustic wave device comprising a piezoelectric substrate, a comb−shaped electrode constituting an IDT on the substrate, a reflector electrode arranged close in the direction of the propagation of a surface wave generated by ...  
WO/2002/082645A1
An elastic wave element comprising a piezoelectric, at least one electrode formed on the piezoelectric, a corrosion resistant layer formed on the surface of the electrode, a hydrophilic film formed on the corrosion resistant layer, and a...  
WO/2002/082644A1
An acoustic wave device includes a piezoelectric element, at least one electrode formed on the piezoelectric element, a compound layer formed on the surface of the electrode, and a dielectric film formed on the compound layer. The compou...  
WO/2002/081365A2
A first type of MEMS resonator (1400) adapted to be fabricated on a SOI wafer (200) is provided. A second type of MEMS resonator that is fabricated using deep trench etching and occupies a small area of a semiconductor chip is taught. Ov...  
WO/2002/080361A1
A tunable nanomechanical filter system (10) comprising an array of nanofeatures (18), such as nanotubes, where the nanofeatures (18) are in signal communication with means for inducing a difference in charge density in the nanofeature (1...  
WO2002017482A3
A micromechanical resonator device and a micromechanical filter utilizing the same are disclosed based upon a radially or laterally vibrating disk structure and capable of vibrating at frequencies well past the GHz range. The center of t...  
WO/2002/080360A1
A tunable nanomechanical oscillator device (10) and system is provided. The nanomechanical oscillator device (10) comprising at least one nanoresonator, such as a suspended nanotube (24), designed such that injecting charge density into ...  
WO2002016256A3
A method and resulting formed device are disclosed wherein the method combines polysilicon surface-micromachining with metal electroplating technology to achieve a capacitively-drive, lateral micromechanical resonator with submicron elec...  
WO/2002/063763A1
A surface acoustic wave device for realizing a device miniaturization such as area reduction or ridge lowering, a cost reduction, and an improvement in reliability. This surface acoustic wave device comprises a piezoelastic substrate (1)...  
WO/2002/061833A2
The aim of the invention is to use a slow dissolving ceramic substrate for components mounted according to the Flip-Clip method, particularly surface wave components, whereby multi-layered metallisations are optionally produced thereon b...  
WO/2002/061943A1
A surface acoustic wave (SAW) device which has a piezo-electric substrate, an interdigital transducer (IDT) electrode provided on a first surface of the piezo-electric substrate and a resin coating covering the IDT electrode, wherein the...  
WO/2002/060054A1
An instrument for inspecting a surface acoustic wave device used as a high frequency filter in the field of mobile communication. The instrument comprises an electron gun (1) for generating and projecting an electron beam as primary elec...  
WO/2002/058233A1
According to the present invention, packaging of the filters, especially the acoustic wave filters, is performed by bonding the carrier (sbstrate) wafer carrying the manufactured filters with a second wafer, called capping wafer. Due to ...  
WO/2002/056466A1
A surface acoustic wave device comprises a piezoelectric substrate (12) of a rectangular plate shape for propagating a Rayleigh wave; a comb-like electrode (13) provided by forming an interdigital electrode on the piezoelectric substrate...  
WO/2002/056465A1
An SAW device restricted in electrical characteristic deterioration and excellent in moisture resistance. Many SAW elements each having an IDT electrode mainly containing aluminum are formed on a piezoelectric substrate. Then the piezoel...  
WO/2002/054592A2
An acoustic wave filter (10) and a method (30) of forming the acoustic wave filter (10) are disclosed. The acoustic wave filter includes a substrate (20) supporting a first die (18) and a second die (18). The first die (18) and second di...  
WO/2002/047263A1
A crystal oscillator module and method to manufacture the crystal oscillator module by sandwich method on a bottom-base, as a printed board (4), where the oscillator crystal (1) is for instance fixed onto the surface of the printed distr...  
WO2002017481A3
A micromechanical resonator device is disclosed that utilizes competition between the thermal dependencies of geometrically tailored stresses and Young's modulus to: (1) reduce the temperature coefficient (TCf) of the resonance frequenci...  
WO2002019520A3
A resonator with mechanical node reinforcement includes a substrate, an intermediate portion adjacent to the substrate, and a resonant portion adjacent to the intermediate portion. The intermediate portion may include multiple layers, su...  
WO/2002/045262A1
An acoustic wave device includes stripe-shaped electrodes (4, 5) of conductor on a piezoelectric substrate (1). Dielectric thin film (8) with a base of oxidation silicon is deposited on the electrodes (4, 5) and a reflector (9) of approp...  
WO/2002/045265A1
Multiple thin film bulk acoustic resonators (10, 11) configured in series (10) and parallel (11) within a coplanar waveguide line structure provides a compact ladder filter. The resonators (10, 11) are formed over an opening (28) in a su...  
WO/2002/042527A1
A surface acoustic wave element usable in a high frequency band, a diamond substrate having a piezoelectric thin film to be used in an optical element material, and a method for manufacturing it. The diamond substrate can be obtained by ...  
WO2002009202A3
At least one bottom electrode (U), a piezoelectric or pyroelectric layer (S) over said bottom electrode and a top electrode (O) over said layer are produced as parts of the layer sequence. The bottom electrode (U) is produced by depositi...  
WO2001059812A3
The invention relates to an assembly comprising a multitude of products provided with an electronic component (1), which has a fundamental quantity that can be modified by tuning the component (1) using an electrical signal. The inventiv...  
WO2002009131A3
The sequence of layers has a lower electrode (U), an upper electrode (O) and a piezoelectric or pyroelectric layer (S) which is located between them. An auxiliary layer (H) is located between the lower electrode (U) and said layer (S), s...  
WO/2002/039537A1
A thin film resonator having enhanced performance and a manufacturing method thereof are disclosed. The thin film resonator includes a supporting means, a first electrode, a dielectric layer and a second electrode. The supporting means h...  
WO/2002/039583A1
The invention relates to an electronic device comprising an electronic component 2, 3, such as a SAW (=Surface Acoustic Wave) filter 2, 3 having connection areas 4, 5. The filter 2, 3 is sealed off from the environment by means of a cove...  
WO2002009160A3
High quality epitaxial layers (26) of piezoelectric material materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer is a layer of ...  
WO/2002/035702A1
In a surface acoustic wave (SAW) filter having a substrate and electrodes formed on the substrate, an electrode has a base layer, a first metal layer made of Al or an Al-based metal and oriented in a constant direction to the substrate, ...  
WO/2002/031974A1
A method of producing surface acoustic wave devices comprising the steps of forming a first film on a piezoelectric board, forming a second film on the first film, forming a resist pattern of predetermined shape on the second film, isotr...  
WO/2002/025811A1
The invention relates to a component having an acoustically active material, whose acoustic constants can be at least partially altered. The acoustically active material is located at least partially at a phase transition point and/or in...  
WO/2002/019520A2
A resonator with mechanical node reinforcement includes a substrate, an intermediate portion adjacent to the substrate, and a resonant portion adjacent to the intermediate portion. The intermediate portion may include multiple layers, su...  
WO2001076064A3
A surface-acoustic-wave die includes a generally rectangular die that comprises a piezoelectric material, atop which is positioned a surface-acoustic-wave electrode pattern. The pattern has a generally rectangular footprint, and the foot...  
WO/2002/016256A2
A method and resulting formed device are disclosed wherein the method combines polysilicon surface-micromachining with metal electroplating technology to achieve a capacitively-drive, lateral micromechanical resonator with submicron elec...  
WO/2002/017482A2
A micromechanical resonator device and a micromechanical filter utilizing the same are disclosed based upon a radially or laterally vibrating disk structure and capable of vibrating at frequencies well past the GHz range. The center of t...  
WO/2002/017481A2
A micromechanical resonator device is disclosed that utilizes competition between the thermal dependencies of geometrically tailored stresses and Young's modulus to: (1) reduce the temperature coefficient (TC¿f?) of the resonance freque...  
WO2001059853A3
The aim of the invention is to increase resistance to breaking and to prevent optical reflections during structuring for producing components on piezoelectric substrates. To this end, an absorber layer (2) which has high optical absorpti...  
WO2001069781A3
A high power SAW device (10) includes an electrode (16, 19) positioned on a piezoelectric substrate (11). The electrode includes a bonding layer (30) of material deposited on and bonding with the substrate and a conductive structure (35)...  
WO/2002/009131A2
The sequence of layers has a lower electrode (U), an upper electrode (O) and a piezoelectric or pyroelectric layer (S) which is located between them. An auxiliary layer (H) is located between the lower electrode (U) and said layer (S), s...  
WO/2002/009160A2
High quality epitaxial layers (26) of piezoelectric material materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer is a layer of ...  
WO/2002/009202A2
At least one bottom electrode (U), a piezoelectric or pyroelectric layer (S) over said bottom electrode and a top electrode (O) over said layer are produced as parts of the layer sequence. The bottom electrode (U) is produced by depositi...  
WO/2002/007310A1
The invention concerns an acoustic wave device comprising a ferroelectric material layer (C) and a substrate. The invention is characterised in that the ferroelectric material is interposed between a first electrode (E1) deposited at the...  

Matches 551 - 600 out of 17,892