| Document |
Document Title |
|
WO/2022/174587A1 |
Disclosed in embodiments of the present application are a bulk acoustic wave resonant structure and a manufacturing method therefor. The bulk acoustic wave resonant structure comprises a substrate, and a reflection structure, a first ele...
|
|
WO/2022/170805A1 |
Provided are a microelectromechanical ultrasonic transducer and array. The microelectromechanical ultrasonic transducer comprises a base layer, a bottom electrode (30), a piezoelectric layer (40), a top electrode (50) and a passive layer...
|
|
WO/2022/168364A1 |
A resonating device (1) is provided with a first board (50) including a resonator (10), and a second board (30) joined to the first board (50), wherein: the second board (30) includes a first power source terminal (ST2) electrically conn...
|
|
WO/2022/169405A1 |
Various embodiments may relate to an acoustic resonator. The acoustic resonator may include a piezoelectric layer. The acoustic resonator may also include a first electrode in contact with a first surface of the piezoelectric layer. The ...
|
|
WO/2022/168498A1 |
The present invention provides a composite substrate which has excellent durability, while confining the energy of elastic waves in a piezoelectric layer. A composite substrate according to one embodiment of the present invention compris...
|
|
WO/2022/168363A1 |
The method for manufacturing a resonance device (1) includes: preparing an aggregate substrate (100) which has a plurality of first power supply terminals (ST1) electrically connected to respective upper electrodes (125) of a plurality o...
|
|
WO/2022/163020A1 |
A resonance device manufacturing method includes: preparing a resonating device (1) comprising a lower lid (20), an upper lid (30) joined to the lower lid (20), and a resonating element (10) that has vibrating arms (121A-121D) configured...
|
|
WO/2022/164496A1 |
A method for improving the accuracy of a final inspection (FI) test of an acoustic wave device includes gating the feedthrough/cross-coupling (e.g., electromagnetic (EM) path) signal of the FI test data response for the tested acoustic w...
|
|
WO/2022/163533A1 |
The present invention provides: a method for producing a composite substrate which exhibits excellent adhesion between a ceramic substrate and a layer containing a tetrafluoroethylene polymer, while having excellent electrical characteri...
|
|
WO/2022/161142A1 |
The present invention relates to a bulk acoustic resonator, comprising a substrate, a top electrode, a piezoelectric layer, a bottom electrode, and an acoustic mirror. A support layer is disposed between the substrate and a resonant stru...
|
|
WO/2022/159255A1 |
A surface acoustic wave, SAW, device (200) includes a first interdigital transducer, IDT, (202) and a second IDT (204) each including interdigital electrodes disposed on a first surface of a substrate (212) of piezoelectric material. The...
|
|
WO/2022/158091A1 |
This piezoelectric oscillator comprises a piezoelectric vibrating element having an excitation electrode and a connection electrode electrically connected to the excitation electrode, a base member having an electrode pad, and a conducti...
|
|
WO/2022/156722A1 |
The present invention provides an electronic device and a formation method therefor. A transmitting end resonance structure and a receiving end sealing cover cavity are prepared on a first wafer, and a transmitting end sealing cover cavi...
|
|
WO/2022/158249A1 |
Provided is an elastic wave device which is unsusceptible to leaking elastic waves in a direction that is perpendicular to a lamination direction of a piezoelectric substrate. This elastic wave device 1 comprises: a piezoelectric subst...
|
|
WO/2022/150752A1 |
A strain compensated heterostructure comprising a substrate comprising silicon carbide material; a first epitaxial layer comprising single-crystal aluminum nitride material formed on a top surface of the substrate; a second epitaxial lay...
|
|
WO/2022/148387A1 |
The present invention relates to a bulk acoustic wave resonator, comprising: a substrate; an acoustic mirror; a bottom electrode; a piezoelectric layer, comprising at least a first layer and a second layer that are adjacent to and overla...
|
|
WO/2022/134861A1 |
Disclosed are a frequency-tunable film bulk acoustic resonator and a preparation method therefor. The resonator comprises a substrate, an air gap, a sandwiched structure formed by electrodes and piezoelectric layers, and an electrode lea...
|
|
WO/2022/134195A1 |
Disclosed in the present application are a surface acoustic wave resonator and a manufacturing method therefor. The surface acoustic wave resonator comprises a piezoelectric substrate, an interdigital transducer located on a surface of t...
|
|
WO/2022/134196A1 |
Disclosed by the present application are a thin-film bulk acoustic wave resonator, a fabrication method therefor, and a filter. The thin-film bulk acoustic wave resonator comprises: a substrate and a piezoelectric thin-film stacking stru...
|
|
WO/2022/137624A1 |
A crystal oscillator 1 comprising: a crystal oscillation element 10 that has a crystal piece 11, excitation electrodes 14a, 14b, and connection electrodes 16a, 16b; and a substrate 30 that has a substrate body 31, substrate electrodes 33...
|
|
WO/2022/130670A1 |
A quartz vibrator 1 comprises: a quartz vibration element 10 having a quartz piece 11, excitation electrodes 14a, 14b, and connection electrodes 16a, 16b; a substrate 30; and a conductive holding member 50 provided between the connection...
|
|
WO/2022/131076A1 |
Provided is an elastic wave device that can promote miniaturization. This elastic wave device 10 comprises: a support member 13; a piezoelectric layer 14 having a first main surface 14a and a second main surface 14b positioned at the s...
|
|
WO/2022/123816A1 |
Provided are a piezoelectric vibrator, a piezoelectric oscillator and a method for making a piezoelectric vibrator wherein sticking of a vibration part can be suppressed. A crystal vibrator 1 comprises: a crystal vibration element 10 i...
|
|
WO/2022/116396A1 |
The present invention discloses a passive cavity type single crystal thin-film bulk acoustic resonator (FBAR) structure, comprising a support substrate, a bonding adhesion layer, an epitaxial substrate layer, and a single crystal piezoel...
|
|
WO/2022/107840A1 |
This method for producing a hollow package includes: a step for forming a side wall on a substrate having aluminum wiring; and a step for forming a top plate portion on the side wall to produce a hollow structure that houses the aluminum...
|
|
WO/2022/100468A1 |
The present invention relates to a thin-film surface acoustic wave resonator and a manufacturing method therefor. The thin-film surface acoustic wave resonator comprises: a first interdigitated electrode having multiple first interdigita...
|
|
WO/2022/100828A1 |
A micromechanical resonator wafer assembly includes an actuator wafer supporting an outer actuator layer. The outer actuator layer includes an oscillating part configured to be driven by an electrical drive signal. The micromechanical re...
|
|
WO/2022/103405A1 |
Acoustic wave devices, and particularly piezoelectric layer arrangements in acoustic wave devices and related methods are disclosed. Acoustic wave devices may include a piezoelectric layer on a carrier substrate. The piezoelectric layer ...
|
|
WO/2022/100469A1 |
The present invention provides a film bulk acoustic resonator and a manufacturing method therefor, and a filter. The film bulk acoustic resonator comprises: a first substrate, an upper surface of the first substrate being provided with a...
|
|
WO/2022/097328A1 |
Provided are a resonance device and a resonance device manufacturing method that make it possible to suppress junction defects at a junction. The resonance device 1 comprises: a MEMS substrate 50 that includes a resonator 10; a top cov...
|
|
WO/2022/089841A1 |
In certain aspects, a chip includes an acoustic resonator (150A, 150B), and a mirror (130A, 130B) under the acoustic resonator. The mirror includes a first plurality of porous silicon layers (132A-1,132A-2,...), and a second plurality of...
|
|
WO/2022/087843A1 |
Provided are a resonator (100) and a manufacturing method therefor, a filter, and an electronic device, relating to the field of resonators, and being capable of suppressing spurs on an admittance curve of a resonator. The resonator (100...
|
|
WO/2022/087825A1 |
Provided are a resonator and a manufacturing method therefor, a filter, and an electronic device, relating to the field of resonators, and being capable of suppressing spurious harmonics of a resonator. The resonator comprises: a piezoel...
|
|
WO/2022/077707A1 |
A thin-film bulk acoustic resonator (100) comprising: a substrate (110); an acoustic reflector structure (120) either disposed in an upper surface of the substrate (110) or disposed above the substrate (110); and a piezoelectric vibratio...
|
|
WO/2022/080433A1 |
An elastic wave device comprising a mounting substrate having wiring, an elastic wave element mounted on the mounting substrate, and a cover member covering the elastic wave element, wherein: the elastic wave element comprises a piezoele...
|
|
WO/2022/062912A1 |
The present disclosure relates to a bulk acoustic wave resonator, comprising: a substrate; an acoustic mirror; a bottom electrode; a piezoelectric layer; and a top electrode. The overlapping region of the top electrode, the piezoelectric...
|
|
WO/2022/062911A1 |
The present disclosure relates to a bulk acoustic resonator, comprising: a substrate, an acoustic mirror, a bottom electrode, a piezoelectric layer and a top electrode, wherein an overlapping region of the top electrode, the piezoelectri...
|
|
WO/2022/063053A1 |
A resonator manufacturing method, comprising: forming a sacrificial layer pattern on a substrate; forming a lower electrode on the sacrificial layer pattern; forming a second sacrificial layer pattern on the lower electrode; forming a pi...
|
|
WO/2022/063149A1 |
A method for manufacturing an FBAR resonator, comprising: forming a lower electrode on a substrate; forming a dielectric layer or a piezoelectric layer on the lower electrode and the substrate, said layer having a first thickness; planar...
|
|
WO/2022/061835A1 |
Disclosed is a manufacturing process for a bulk acoustic resonator, the process comprising: making an acoustic mirror on a substrate; making, on the substrate, a bottom electrode layer for covering the acoustic mirror; chemically treatin...
|
|
WO/2022/057769A1 |
Disclosed are a thin-film bulk acoustic wave resonator and method for manufacture thereof and filter, the acoustic wave resonator comprising: a piezoelectric stack structure, said piezoelectric stack structure comprising a first electrod...
|
|
WO/2022/057466A1 |
The present invention relates to a film bulk acoustic wave resonator, a manufacturing method therefor and a filter thereof. The film bulk acoustic wave resonator comprises a piezoelectric laminated structure; the piezoelectric laminated ...
|
|
WO/2022/056953A1 |
A thermistor (602) resonator and a manufacturing method therefor. The thermistor (602) resonator comprises a first substrate (10), a second substrate (20), a first pad (40), a thermistor structure (60), a vibrator (80), and an upper cove...
|
|
WO/2022/057768A1 |
Disclosed in the present invention is a manufacturing method for a thin film bulk acoustic wave resonator, comprising: forming a first electrode, a second electrode, and a piezoelectric layer, the piezoelectric layer being positioned bet...
|
|
WO/2022/057767A1 |
Disclosed is a method for manufacturing a thin-film bulk acoustic resonator, comprising: providing a first substrate; forming a cavity on an upper surface of the first substrate; forming a sacrificial layer in the cavity; sequentially fo...
|
|
WO/2022/057765A1 |
The present invention relates to a method for manufacturing a film bulk acoustic resonator and a filter. The method comprises: forming a first substrate having a first sacrificial layer; sequentially forming a first electrode, a piezoele...
|
|
WO/2022/054372A1 |
[Problem] To improve the bonding strength between a piezoelectric material substrate and a support substrate, effectively reduce the reflection of bulk waves, and suppress spurious emissions. [Solution] This composite substrate 7A for an...
|
|
WO/2022/053161A1 |
A bulk acoustic wave, BAW, resonator (100) on a substrate (102), comprising a piezoelectric element (104), a bottom electrode (106) on a first face (104A) of the piezoelectric element and a top electrode (108) on a second face (104B) of ...
|
|
WO/2022/056138A2 |
Embodiments of a single-chip ScAIN tunable filter bank include a plurality of switching elements, and a plurality of channel filters integrated on a monolithic platform. The monolithic platform may comprise a single crystal base and each...
|
|
WO/2022/047206A1 |
A substrate (202) that includes an encapsulation layer (203), a first acoustic resonator (205), a second acoustic resonator (207), at least one first dielectric layer (240), a plurality of first interconnects (244), at least one second d...
|
