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Patent Searching and Data


Matches 251 - 300 out of 19,554

Document Document Title
WO/2011/129351A1
Disclosed is a MEMS device production method which enables easy manufacture of a structure wherein a substrate surface and a vibration member lower surface face each other with a sufficiently narrow gap in between. The MEMS device produc...  
WO/2011/128387A1
The invention relates to a method for producing a dielectric layer on the surface of a component, by means of which a desired topography can be set. In particular, a dielectric layer having a planar surface can be generated over a substr...  
WO/2011/114628A1
In a MEMS element having a substrate (1), a sealing membrane (7), a movable portion (3) and an electrode (5) of a beam-like structure having mutually overlapping areas separated by a gap in a direction perpendicular to the surface of the...  
WO/2011/108715A1
Disclosed is an electronic component package, wherein a stable conduction state is ensured at a penetration hole provided in a sealing member, and the inside of the electronic component package can be sufficiently sealed. An electronic c...  
WO/2011/105317A1
Provided is an acoustic wave device that allows the film thickness of an IDT electrode to be made thicker while suppressing unwanted wave responses. The acoustic wave device is equipped with: a piezoelectric substrate (2); an IDT electro...  
WO/2011/102307A1
The purpose of the invention is to form a hollow structure capable of suppressing deterioration of an elastic wave element and capable of being resistant to pressure. For that purpose, there is provided a method for producing an electron...  
WO/2011/099381A1
Disclosed are a piezoelectric device and a piezoelectric device manufacturing method that reduce the number of etchings and the damage to the piezoelectric thin film resulting from the etchings, and are capable of reducing piezoelectric ...  
WO/2011/093456A1
Disclosed is a piezoelectric vibration device in which the excitation electrodes of a piezoelectric vibration piece are hermetically sealed, the piezoelectric vibration device including a plurality of sealing members which hermetically s...  
WO/2011/088904A1
The invention relates to an electroacoustic transducer having reduced loss due to acoustic waves emitted in the transverse direction. For this purpose, a transducer comprises a central excitation area (ZAB), inner edge areas (IRB) flanki...  
WO/2011/076806A1
The invention relates to a mineral electret-based electromechanical device and the method for manufacturing same. Said device includes a dielectric stack comprising at least one electret layer (2E), and two electrodes (16, 20) on two opp...  
WO/2011/077891A1
Provided is a hollow package production process with which it is possible to prevent deterioration of device properties due to residual substances adhering to the vibrator during production of the hollow package, the production process i...  
WO/2011/065317A1
Disclosed is a piezoelectric device which is not deteriorated in the resonance characteristics even in cases where an intermediate layer for bonding is provided between a piezoelectric thin film and a supporting body. Also disclosed is a...  
WO/2011/065499A1
An acoustic wave device has a substrate and an acoustic wave element disposed on a first main surface of the substrate. A protrusion is disposed on a side surface of the substrate and protrudes from the side surface further towards a sec...  
WO/2011/064405A1
Method and system (1) for stabilizing a temperature (Tcomp) of an integrated electrical component, placed in an oven, at a predefined temperature (Tset). The temperature of the integrated electrical component is sensed by means of temper...  
WO/2011/061402A1
The invention concerns a novel bulk acoustic wave (BAW) resonator design and method of manufacturing thereof. The bulk acoustic wave resonator comprises a resonator portion, which is provided with at least one void having the form of a t...  
WO/2011/061992A1
Provided is an alkali-niobate-based piezoelectric porcelain composition which has a crystal-structure transition point in the range of operation guarantee temperatures and which, despite this, is inhibited from abruptly changing in capac...  
WO/2011/058930A1
Disclosed is an acoustic wave element wherein power durability of an IDT electrode can be increased without significant increase to electrical resistance. An acoustic wave element (1) is provided with IDT electrodes (3) atop a piezoelect...  
WO/2011/052551A1
A piezoelectric device is provided with a piezoelectric thin film (10) formed by peeling a sheet off a piezoelectric monocrystalline substrate (1); an inorganic layer (20) formed on the rear face (12) of the piezoelectric thin film (10);...  
WO/2011/042388A1
The invention relates to an acoustic wave device comprising at least one surface acoustic wave (SAW) filter and one bulk acoustic wave (BAW) filter, characterized in that it includes, on a substrate comprising a second piezoelectric mate...  
WO/2011/042597A1
The invention relates to a micromechanical resonator comprising a substrate (1) of first material (2), a resonator (3) suspended to the supporting structure (1), the resonator (3) being at least partially of the same material (2) as the ...  
WO/2011/043357A1
Disclosed are an irradiation method of a laser, a frequency adjustment method of a piezoelectric vibrator using the same, and a frequency-adjusted piezoelectric device using the same capable of minimizing damage to silicon material or su...  
WO/2011/040179A1
Disclosed are an acoustic wave device and manufacturing method of the same for reducing temperature dependency for the frequency of an acoustic wave device, and reducing variation in TCF during manufacture of acoustic wave devices. A man...  
WO/2011/036977A1
In order to suppress the occurrence of unnecessary electromagnetic coupling and the occurrence of the characteristic deterioration of an elastic wave filter because wiring patterns in the elastic wave filter configured from a plurality o...  
WO/2011/034104A1
In a piezoelectric vibration piece, a vibrating section, which has a vibration region configured by having a pair of excitation electrodes formed, and a connecting section, which has formed thereon a pair of terminal electrodes that conn...  
WO/2011/030571A1
Disclosed is a manufacturing method for a piezoelectric oscillator that is provided with a step allowing reliable screening of piezoelectric oscillators that have a danger of becoming defective products by way of adhesion of dirt or fore...  
WO/2011/021460A1
Irregularities on a dielectric film surface can be suppressed, and the accuracy of the film thickness of the dielectric film can be improved. An elastic wave device is provided with a piezoelectric substrate (10), a comb-shaped electrode...  
WO/2011/021461A1
Disclosed is an elastic wave device and method for manufacturing the same for the purpose of expanding the range of selection of materials for mass-addition film and expanding the range in which resonance frequency can be adjusted. Provi...  
WO/2011/013553A1
A composite substrate (10) is a substrate used in an acoustic wave device, and is provided with supporting substrate (12), a piezoelectric substrate (14), and an adhesion layer (19) adhering the supporting substrate (12) and the piezoele...  
WO/2011/004665A1
Provided is an elastic wave device that comprises a piezoelectric film supported by a supporter, wherein a configuration is achieved that prevents various malfunctions from occurring upon joining, and that does not let degradation occur,...  
WO/2011/002028A1
A manufacturing method of piezoelectric-body film that is provided with an aluminum-nitride film containing scandium, comprises a sputtering process wherein sputtering is conducted with aluminum and scandium, in an atmosphere including a...  
WO/2011/001680A1
In a resonator using the MEMS technology, accuracy of the electrode shape can be improved, the short circuit between the input and the output can be avoided, and the reliability of the resonator can be improved. A resonator is provided w...  
WO/2010/147772A1
A method of forming a micromechanical resonator includes forming a resonator body (12) anchored to a substrate (10) by at least a first anchor (12a, 12b). This resonator body may include a semiconductor or other first material having a n...  
WO/2010/147156A1
Disclosed is an easily-producible resonator which uses torsional vibration and has a structure wherein the substrate surface and vibration member lower surface face each other with a sufficiently narrow gap in between. The resonator is p...  
WO/2010/143363A1
Disclosed are a resonator and an oscillator using the same, capable of broadly and finely correcting the resonant frequency of the vibrating element. The resonator comprises a vibrating element (101), electrodes (4, 5) arranged with a cl...  
WO/2010/143475A1
An ion implanted layer (100) is formed inside a piezoelectric single crystal substrate (1) by implanting hydrogen ions under predetermined conditions (S101). A lower electrode (20) functioning as a device is formed on the surface of the ...  
WO/2010/136986A3
A method of manufacturing an electronic device that comprises a microelectromechanical (MEMS) element, the method comprising the steps of: providing a material layer (34) on a first side of a substrate (32); providing a trench (40) in th...  
WO/2010/136986A2
A method of manufacturing an electronic device that comprises a microelectromechanical (MEMS) element, the method comprising the steps of: providing a material layer (34) on a first side of a substrate (32); providing a trench (40) in th...  
WO/2010/128647A1
Disclosed is a piezoelectric ceramic which is characterized by containing [K1-xNax]1-yLiy[Nb1-z-wTazSbw]O3 (wherein x, y, z and w each represents a molar ratio and satisfies 0 ≤ x ≤ 1, 0 ≤ y ≤ 1, 0 ≤ z ≤ 1, 0 ≤ w ≤ 1) as ...  
WO/2010/125873A1
A SAW device (1) has a substrate (3) that makes elastic waves propagate; IDT electrodes (15) that are placed on a first main face (3a) of the substrate (3); and electrode pads (13) that are connected electrically to the IDT electrodes (1...  
WO/2010/122993A1
Provided is an elastic boundary wave device (1) having a three-medium structure, wherein gaps do not easily form in a first dielectric layer, and the frequency tolerance is low even when using thick IDT electrodes. IDT electrodes (5), a ...  
WO/2010/118512A1
Some embodiments of the invention provide a filter having at least one first filter, each first filter being a band-reject type filter having a first set of filter parameters that are a function of a first material used to fabricate the ...  
WO/2010/116332A1
A bulk-acoustic-mode MEMS resonator has a first portion with a first physical layout, and a layout modification feature. The resonant frequency is a function of the physical layout, which is designed such that the frequency variation is ...  
WO/2010/114115A1
Provided is a package member assembly wherein a plurality of package members are integrally formed. The package member assembly has a plurality of bottomed holes in the front main surface and the rear main surface of a wafer composed of ...  
WO/2010/114602A1
Devices having piezoelectric material structure (10) 2 integrated with substrates (104) are described. Fabrication techniques for forming such devices are also described. The fabrication may include bonding a piezoelectric material wafer...  
WO/2010/101166A1
Provided is a surface acoustic wave device having a low energy loss, and if the device is used for a filtering device, capable of suppressing spurious which occurs near a resonance frequency of a main response, and improving a frequency ...  
WO/2010/097908A1
Provided is a junction-glass cutting method for cutting a junction glass, in which a plurality of glass substrates are junctioned on their junction faces through a junction material, along a cut-scheduled line. The junction glass cutting...  
WO/2010/097910A1
An anodic bonding method for anodically bonding a first substrate and a second substrate is provided with a substrate arranging step wherein the first substrate and the second substrate are arranged such that the substrates are aligned w...  
WO/2010/097909A1
Provided is a package wherein a plurality of substrates, including a first substrate and a second substrate, are bonded, and a cavity is formed between the substrates. The package is provided with a corrosive-resistant bonding film arran...  
WO/2010/097906A1
Provided is a piezoelectric oscillator manufacturing method for manufacturing a piezoelectric oscillator, in which a piezoelectric oscillating reed is sealed in a cavity formed between a base substrate and a lid substrate jointed to each...  
WO/2010/097898A1
Disclosed is a piezoelectric transducer comprising a package formed by joining a first substrate and a second substrate so that a cavity is formed between the substrates; an internal electrode part formed on the first substrate and conta...  

Matches 251 - 300 out of 19,554