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Patent Searching and Data


Matches 251 - 300 out of 19,634

Document Document Title
WO/2012/049373A1
In laterally coupled BAW (LBAW) filters, the center frequency is generally determined by the thin film stack thickness. However, it is possible to affect the operation frequency with the lateral dimensions of electrodes (13), e.g., elect...  
WO/2012/049372A1
The invention relates to an acoustically coupled thin-film BAW filter, comprising a piezoelectric layer (1), an input-port (2) on the piezoelectric layer(1) changing electrical signal into an acoustic wave (SAW, BAW), and an output-port ...  
WO/2012/043615A1
Provided is a method for manufacturing a piezoelectric device with which deterioration of the piezoelectricity of a piezoelectric thin film and damage to the piezoelectric thin film due to ion injection can be prevented. A compressive st...  
WO/2012/043616A1
Provided are a piezoelectric device and a method for manufacturing said piezoelectric device, with which deterioration in the surface roughness of a piezoelectric thin film and breaking of a support substrate due to ion injection can be ...  
WO/2012/039266A1
Disclosed is a method for manufacturing a piezoelectric device, which comprises: a piezoelectric body formation step (S3) wherein a piezoelectric body (4) is formed on a substrate (1); and a polishing step (S7) wherein a surface of the s...  
WO/2012/039158A1
Disclosed is an electronic part provided with a series resonator (12) and a parallel resonator (14) provided on a piezoelectric substrate (10); a signal wire (20) provided on the piezoelectric substrate (10) and electrically connected to...  
WO/2012/033125A1
A substrate is obtained that has suitable strength at low cost, and can tightly bond with a component such as a piezoelectric material substrate. The present invention is a SAW device substrate (1) comprising spinel, wherein the level di...  
WO/2012/019904A1
The invention relates to a component working with acoustic waves, having an improved temperature gradient of the frequency range and having increased performance strength. To this end, the component comprises a stack of layers having a l...  
WO/2012/020601A1
In order to provide complete removal of a sacrificial layer on a disk lower surface during etching, without leaving residue, an electrostatic drive-type disk-type vibrator comprises: a disk-type vibrator structure (1); a pair of drive el...  
WO/2012/020602A1
In order to reduce variation in resonance frequency caused by variation in the precision of dimensions for a supporting structure of a vibrator, the present invention provides an electrostatic drive-type disk-type MEMS vibrator comprisin...  
WO/2012/020172A1
The invention relates to a temperature compensated micromechanical resonator and method of manufacturing thereof. The resonator comprises a resonator element comprising a semiconductor crystal structure, which is doped so as to reduce it...  
WO/2012/020173A1
The invention relates to a microelectromechanical resonator and a method of manufacturing thereof. The resonator comprises at least two resonator elements (10A, 10B) made from semiconductor material, the resonator elements being arranged...  
WO/2012/017888A1
Provided is an electronic component, which has high planarity of the metal lid surface abutting on a substrate, and high airtightness. An electronic component manufacturing method of the present invention is provided with: a step wherein...  
WO/2012/014791A1
Disclosed is a method for manufacturing an elastic wave device, said method enabling the manufacture of an elastic wave device having excellent properties and provided with an IDT electrode of which at least part is positioned in a groov...  
WO/2012/011410A1
The present invention enables a SAW filter element (3) to be shielded (sealed off) from the outside using lead-free solder. A predetermined number of SAW filter elements (3) are affixed to a ceramic substrate (2) on which electrode parts...  
WO/2011/150641A1
A crystal oscillator and manufacturing method thereof are provided. The crystal oscillator includes: a semiconductor substrate; an interlayer dielectric layer located on the surface of the semiconductor substrate, an excitation plate and...  
WO/2011/145750A1
Disclosed is a photosensitive resin composition having excellent resistance to moist heat, excellent hollow structure maintenance and the cured product of which has a high modulus of elasticity at high temperature. Further disclosed are ...  
WO/2011/141342A1
The invention relates to temperature compensated microelectro-mechanical (MEMS) resonators (300) preferably made of silicon Prior art MEMS resonators have a significant temperature coefficient of resonance frequency, whereby it is diffic...  
WO/2011/138877A1
Disclosed is a CSP-type surface acoustic wave device such that the bond strength between a surface acoustic wave element and a mounting substrate is high. The disclosed surface acoustic wave device (1) is provided with a surface acoustic...  
WO/2011/136070A1
Disclosed is an SAW device (1) which has: a substrate (3); an SAW element (11), which is positioned on the first main surface (3a) of the substrate (3); and a cover (5), which is positioned on the SAW element (11). Furthermore, the SAW d...  
WO/2011/132443A1
Disclosed is a surface acoustic wave device upon which an insulating film is formed so as to cover an IDT electrode upon a piezoelectric substrate, wherein the frequency characteristics of the surface acoustic wave device, such as resona...  
WO/2011/129352A1
Disclosed is a production method for MEMS devices, whereby it is easy to manufacture a structure in which the surface of a substrate and the bottom surface of a vibration member face one another with a sufficiently narrow gap therebetwee...  
WO/2011/129351A1
Disclosed is a MEMS device production method which enables easy manufacture of a structure wherein a substrate surface and a vibration member lower surface face each other with a sufficiently narrow gap in between. The MEMS device produc...  
WO/2011/128387A1
The invention relates to a method for producing a dielectric layer on the surface of a component, by means of which a desired topography can be set. In particular, a dielectric layer having a planar surface can be generated over a substr...  
WO/2011/114628A1
In a MEMS element having a substrate (1), a sealing membrane (7), a movable portion (3) and an electrode (5) of a beam-like structure having mutually overlapping areas separated by a gap in a direction perpendicular to the surface of the...  
WO/2011/108715A1
Disclosed is an electronic component package, wherein a stable conduction state is ensured at a penetration hole provided in a sealing member, and the inside of the electronic component package can be sufficiently sealed. An electronic c...  
WO/2011/105317A1
Provided is an acoustic wave device that allows the film thickness of an IDT electrode to be made thicker while suppressing unwanted wave responses. The acoustic wave device is equipped with: a piezoelectric substrate (2); an IDT electro...  
WO/2011/102307A1
The purpose of the invention is to form a hollow structure capable of suppressing deterioration of an elastic wave element and capable of being resistant to pressure. For that purpose, there is provided a method for producing an electron...  
WO/2011/099381A1
Disclosed are a piezoelectric device and a piezoelectric device manufacturing method that reduce the number of etchings and the damage to the piezoelectric thin film resulting from the etchings, and are capable of reducing piezoelectric ...  
WO/2011/093456A1
Disclosed is a piezoelectric vibration device in which the excitation electrodes of a piezoelectric vibration piece are hermetically sealed, the piezoelectric vibration device including a plurality of sealing members which hermetically s...  
WO/2011/088904A1
The invention relates to an electroacoustic transducer having reduced loss due to acoustic waves emitted in the transverse direction. For this purpose, a transducer comprises a central excitation area (ZAB), inner edge areas (IRB) flanki...  
WO/2011/076806A1
The invention relates to a mineral electret-based electromechanical device and the method for manufacturing same. Said device includes a dielectric stack comprising at least one electret layer (2E), and two electrodes (16, 20) on two opp...  
WO/2011/077891A1
Provided is a hollow package production process with which it is possible to prevent deterioration of device properties due to residual substances adhering to the vibrator during production of the hollow package, the production process i...  
WO/2011/065317A1
Disclosed is a piezoelectric device which is not deteriorated in the resonance characteristics even in cases where an intermediate layer for bonding is provided between a piezoelectric thin film and a supporting body. Also disclosed is a...  
WO/2011/065499A1
An acoustic wave device has a substrate and an acoustic wave element disposed on a first main surface of the substrate. A protrusion is disposed on a side surface of the substrate and protrudes from the side surface further towards a sec...  
WO/2011/064405A1
Method and system (1) for stabilizing a temperature (Tcomp) of an integrated electrical component, placed in an oven, at a predefined temperature (Tset). The temperature of the integrated electrical component is sensed by means of temper...  
WO/2011/061402A1
The invention concerns a novel bulk acoustic wave (BAW) resonator design and method of manufacturing thereof. The bulk acoustic wave resonator comprises a resonator portion, which is provided with at least one void having the form of a t...  
WO/2011/061992A1
Provided is an alkali-niobate-based piezoelectric porcelain composition which has a crystal-structure transition point in the range of operation guarantee temperatures and which, despite this, is inhibited from abruptly changing in capac...  
WO/2011/058930A1
Disclosed is an acoustic wave element wherein power durability of an IDT electrode can be increased without significant increase to electrical resistance. An acoustic wave element (1) is provided with IDT electrodes (3) atop a piezoelect...  
WO/2011/052551A1
A piezoelectric device is provided with a piezoelectric thin film (10) formed by peeling a sheet off a piezoelectric monocrystalline substrate (1); an inorganic layer (20) formed on the rear face (12) of the piezoelectric thin film (10);...  
WO/2011/042388A1
The invention relates to an acoustic wave device comprising at least one surface acoustic wave (SAW) filter and one bulk acoustic wave (BAW) filter, characterized in that it includes, on a substrate comprising a second piezoelectric mate...  
WO/2011/042597A1
The invention relates to a micromechanical resonator comprising a substrate (1) of first material (2), a resonator (3) suspended to the supporting structure (1), the resonator (3) being at least partially of the same material (2) as the ...  
WO/2011/043357A1
Disclosed are an irradiation method of a laser, a frequency adjustment method of a piezoelectric vibrator using the same, and a frequency-adjusted piezoelectric device using the same capable of minimizing damage to silicon material or su...  
WO/2011/040179A1
Disclosed are an acoustic wave device and manufacturing method of the same for reducing temperature dependency for the frequency of an acoustic wave device, and reducing variation in TCF during manufacture of acoustic wave devices. A man...  
WO/2011/036977A1
In order to suppress the occurrence of unnecessary electromagnetic coupling and the occurrence of the characteristic deterioration of an elastic wave filter because wiring patterns in the elastic wave filter configured from a plurality o...  
WO/2011/034104A1
In a piezoelectric vibration piece, a vibrating section, which has a vibration region configured by having a pair of excitation electrodes formed, and a connecting section, which has formed thereon a pair of terminal electrodes that conn...  
WO/2011/030571A1
Disclosed is a manufacturing method for a piezoelectric oscillator that is provided with a step allowing reliable screening of piezoelectric oscillators that have a danger of becoming defective products by way of adhesion of dirt or fore...  
WO/2011/021460A1
Irregularities on a dielectric film surface can be suppressed, and the accuracy of the film thickness of the dielectric film can be improved. An elastic wave device is provided with a piezoelectric substrate (10), a comb-shaped electrode...  
WO/2011/021461A1
Disclosed is an elastic wave device and method for manufacturing the same for the purpose of expanding the range of selection of materials for mass-addition film and expanding the range in which resonance frequency can be adjusted. Provi...  
WO/2011/013553A1
A composite substrate (10) is a substrate used in an acoustic wave device, and is provided with supporting substrate (12), a piezoelectric substrate (14), and an adhesion layer (19) adhering the supporting substrate (12) and the piezoele...  

Matches 251 - 300 out of 19,634