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WO/2020/098487A1 |
A bulk acoustic resonator, a filter comprising the resonator, and an electronic device comprising the filter The bulk acoustic resonator comprises: substrates (101, 201, 301, 401); acoustic mirrors (103, 203, 303, 403); bottom electrodes...
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WO/2020/098910A1 |
The present invention relates to acoustic wave devices, in particular surface acoustic wave (SAW) devices. The present invention presents a SAW device with an acoustic bandgap structure, and presents a method for fabricating such a SAW d...
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WO/2020/098484A1 |
A bulk acoustic wave resonator, comprising: a substrate (101), an acoustic mirror (103), a bottom electrode (105) provided above the substrate (101), a top electrode (109) that is provided opposite to the bottom electrode (105) and is pr...
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WO/2020/095924A1 |
[Problem] To prevent the breakage and cracking of a joined body obtained by joining a piezoelectric material substrate and a silicon substrate via a joining layer comprising silicon oxide, while also improving the effective resistivity t...
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WO/2020/087957A1 |
The embodiments of the present invention disclose an acoustic wave device. The device comprises: a substrate, and a first electrode layer, a piezoelectric layer, and a second electrode layer sequentially arranged on the substrate. The de...
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WO/2020/083552A1 |
A seed layer (210) of a noble metal is formed by electrochemical deposition on a metal electrode (111) disposed on a dielectric layer (110,310). The noble metal seed layer allows the deposition of a highly textured piezoelectric layer (3...
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WO/2020/066078A1 |
Provided is an airtight sealing cap with a flange portion, in which flow of solder outside a bonding region is suppressed. In the airtight sealing cap, which is used in an electronic component-accommodating package including an electroni...
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WO/2020/062384A1 |
A flexible substrate film bulk acoustic resonator and a forming method therefor conducive to raising the Q value of the resonator and improving the performance of the resonator. The forming method for the flexible substrate film bulk aco...
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WO/2020/066126A1 |
Provided are a resonance device and a resonance device manufacturing method which enable improvement of bond strength and airtightness of joining parts. A resonance device 1 is provided with: a MEMS substrate 50 including a resonator 10;...
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WO/2020/067013A1 |
A composite substrate of the present disclosure comprises: a piezoelectric substrate having a first surface, which is an element forming surface, and a second surface, which is a back surface thereof; a sapphire substrate having a third ...
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WO/2020/050396A1 |
A composite substrate according to the present disclosure is a composite substrate in which a piezoelectric substrate and a sapphire substrate are directly bonded, wherein a step punch structure is provided on the bonding surface of the ...
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WO/2020/044925A1 |
Provided is a composite substrate in which increase in pyroelectric properties due to heat treatment is prevented. This composite substrate includes an oxide single crystal thin film which is a single crystal thin film of a piezoelectric...
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WO/2020/047315A1 |
Packaged surface acoustic wave devices, and methods of making the same are provided. The packaged surface acoustic wave devices are relatively thin and can have a height of less than 220 micrometers. The packaged surface acoustic wave de...
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WO/2020/040203A1 |
Provided is a substrate for a surface acoustic wave element, the substrate comprising a piezoelectric material and having a chamfered part on the outer peripheral surface, wherein the arithmetic mean roughness Ra1 of a roughness curve in...
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WO/2020/028523A1 |
In one embodiment, a signal transduction system includes an arrangement of interacting unit cells. Each unit cell can have one or more adjustable parameters that are adjustable to enable one or more adjustable impedance values of the uni...
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WO/2020/027075A1 |
A composite substrate according to the present disclosure is a composite substrate comprising a piezoelectric substrate and a sapphire substrate which are bonded to each other directly, wherein the ratio of the number of oxygen atoms to ...
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WO/2020/027918A1 |
In certain aspects, a thin film surface acoustic wave, SAW, die comprises a high-resistivity substrate (110), a bonding layer (108) on the high-resistivity substrate, and a thin film piezoelectric island (112) on the bonding layer, where...
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WO/2020/012833A1 |
Provided is a sealing material which comprises a glass powder and a fire-resistant filler powder and has such a property that, when formed into a sealing layer having a small thickness, an undesirable stress rarely remains in the sealing...
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WO/2020/006578A1 |
An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series f...
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WO/2019/241174A1 |
Acoustic resonator devices and filters are disclosed. A filter includes a substrate and a piezoelectric plate having parallel front and back surfaces, the back surface attached to the substrate. A conductor pattern is formed on the front...
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WO/2019/233670A1 |
An electroacoustic resonator (EAR) that allows an RF filter having a large bandwidth is provided. The resonator comprises a piezoelectric material (PM) and an electrode structure (ES, EF) on the piezoelectric material. The piezoelectric ...
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WO/2019/228750A1 |
A method of manufacturing a bulk acoustic wave resonator comprises the forming of a workpiece on a substrate (A) that includes a separation layer (111) on which a rare earth metal oxide layer (130) is formed that serves as a seed layer f...
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WO/2019/226285A1 |
An electronic device (400) includes a passive substrate (402). A passive-on-glass, POG, device (470) is on the passive substrate. A bulk acoustic wave, BAW, filter (460) is on the passive substrate. The POG device can be any type of pass...
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WO/2019/225047A1 |
An MEMS device (1) comprises: a lower substrate (50) that includes a resonator (10); an upper substrate (30) provided so as to face an upper electrode (E2) of the resonator (10); a bonding layer (40) that seals the inner space between th...
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WO/2019/226498A1 |
System and methods for a hollow-disk radial-contour mode resonator structure. The hollow disk reduces the dynamic mass and stiffness of the structure. Since electromechanical coupling Cx/Co goes as the reciprocal of mass and stiffness, t...
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WO/2019/206534A1 |
A SAW resonator that provides the possibility of adjusting the bandwidth of a bandpass filter or of a band rejection filter is provided. The SAW resonator has a piezoelectric material (PM), an electrode structure (ES, EF) above the piezo...
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WO/2019/206986A1 |
An electro-acoustic resonator comprises a piezoelectric substrate (310) on which an electrode structure is disposed. The electrode structure comprises a metal layer (535) of aluminum and copper, a barrier layer (450) forming a barrier ag...
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WO/2019/206533A1 |
An improved electroacoustic SAW or BAW filter (EAF) with improved electric and/or acoustic properties is provided. The filter has a first resonator (Rl) in a first layer stack (LSI) and a second resonator (R2) in a second layer stack (LS...
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WO/2019/201521A1 |
A bulk acoustic wave resonator comprises a substrate (101) and a layer stack (110) having electro-acoustical properties comprising first and second electrodes (111, 112) sandwiching a piezoelectric layer (113). The layer stack extends in...
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WO/2019/197166A1 |
A package for an electric device is proposed based on a substrate (SU, SU1, SU2) that comprises at least a piezoelectric layer. Device structures are enclosed in a cavity of an integrally formed package layer structure (PK) of a thin fil...
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WO/2019/197086A1 |
A TF-SAW transducer with improved characteristics is provided. The transducer has a carrier (C), a piezoelectric layer (PM), and interdigitated electrode structures (BB, EFO) to excite a main mode. In the presence of a transversal acoust...
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WO/2019/186011A1 |
The invention relates to a hybrid structure (10) for a surface acoustic wave device, comprising a useful layer (1) of piezoelectric material, joined to a support substrate (2) having a lower coefficient of thermal expansion than the usef...
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WO/2019/185248A1 |
An improved BAW resonator with an increased electroacoustic coupling is provided. The resonator has a monocrystalline piezoelectric material (MCPM) obtained by layer transfer of LN, LT or quartz between a bottom electrode (BE) and a top ...
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WO/2019/186032A1 |
The invention relates to a method for transferring a piezoelectric layer (3) onto a support substrate (6), comprising: - providing a donor substrate (40) consisting of a heterostructure (4) comprising a piezoelectric substrate (3) bonded...
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WO/2019/185271A1 |
A BAW resonator with an improved lateral energy confinement is provided. The resonator has a bottom electrode in a bottom electrode layer, a top electrode in a top electrode layer and a piezoelectric layer between the bottom electrode la...
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WO/2019/185363A1 |
The invention relates to a surface acoustic wave device comprising a base substrate (206, 606), a piezoelectric layer (204, 304, 610) and an electrode layer (208, 608) in between the piezoelectric layer (204, 304, 610) and the base subst...
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WO/2019/185324A1 |
A bulk acoustic wave resonator device comprises bottom and top electrodes (120, 360). A piezoelectric layer (355) sandwiched therebetween has a thickness in the active resonator area different from the thickness in the surrounding area. ...
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WO/2019/174825A1 |
RF-filter with a ladder type structure with series reactance elements (RSI, RS4) and parallel reactance elements (RP1,...) in which additional shunt lines (SL1, SL4) with a respective notch element are added to provide additional degrees...
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WO/2019/173621A1 |
Methods, systems, and apparatus for generating Kerr frequency combs. The system includes a continuous-wave pump laser to provide a master comb pump. The system includes a microresonator that generates a master Kerr frequency comb using t...
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WO/2019/170334A1 |
A layer system especially for forming SAW devices thereon is proposed comprising a monocrystalline sapphire substrate having a first surface and a crystalline piezoelectric layer comprising A1N, deposited onto the first surface, and havi...
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WO/2019/171476A1 |
A method for manufacturing a surface acoustic wave element according to one embodiment comprises: a first pattern formation step in which a first mask pattern, which is opened so that a plurality of first electrode finger formation sched...
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WO/2019/168595A1 |
A radio frequency front-end, RFFE, device includes a die (302) having a front-side dielectric layer (304) on an active device (310). The active device is on a first substrate (320). The RFFE device also includes a microelectromechanical ...
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WO/2019/163494A1 |
Provided is a piezoelectric film (1) containing an AlN crystal and a first element and a second element that have been added to the AlN crystal. The first element is an element of which the ion radius is greater than that of Al. The seco...
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WO/2019/159410A1 |
Provided are: a resonance device wherein the vibration space of a resonator can be maintained in a high vacuum state; and a resonance device manufacturing method. A resonance device 1 is provided with: a MEMS substrate 50 that includes a...
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WO/2019/159738A1 |
This bonded substrate has a crystal substrate which is cut at an angle intersecting the crystal X axis, and a piezoelectric substrate laminated on the crystal substrate, wherein: the cut angle of the crystal substrate is preferably an an...
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WO/2019/155120A1 |
The invention relates to a microelectromechanical resonator, comprising a support structure, a resonator element suspended to the support structure, the resonator element comprising a plurality of sub-elements, and an actuator for exciti...
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WO/2019/155119A1 |
The invention concerns a microelectromechanical resonator comprising a support structure, a resonator element suspended to the support structure, and an actuator for exciting the resonator element to a resonance mode. According to the in...
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WO/2019/156713A1 |
A micromechanical resonator is provided that enables a smaller total package size with an acceptable quality factor for timing applications. The MEMS resonator includes a vibration portion with a base and three or more vibrating beams ex...
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WO/2019/142483A1 |
[Problem] To improve the bonding strength in the bonding of a piezoelectric material substrate made from lithium tantalite or the like to a supporting substrate having a silicon oxide layer formed thereon. [Solution] An assembly is provi...
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WO/2019/132931A1 |
A resonator including a III-N material is described. The III-N based resonators include a cavity in a substrate, where the substrate includes a group IV material. The resonator further includes a liner on a surface of the substrate withi...
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