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WO/2018/163860A1 |
Provided is an elastic wave device in which degradation of resonance characteristics does not easily occur. In an end surface reflection type elastic wave device 1 in which an elastic wave is reflected between a first end surface 6c and ...
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WO/2018/159111A1 |
Provided is an acoustic wave device that is capable of achieving miniaturization and high productivity. An acoustic wave device 10 is provided with: a piezoelectric substrate 2 (substrate having piezoelectricity); a first bandpass type f...
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WO/2018/151146A1 |
[Problem] To provide an acoustic wave element which is reduced in size and can be fabricated relatively easily, which can be put to practical use without using harmful substance and can suppress surface acoustic wave transmission loss, w...
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WO/2018/143006A1 |
In this AT-cut quartz oscillation plate wafer, two corners of each of a plurality of base parts which project, toward quartz oscillation plates, from a support part extending along the arrangement direction of the quartz oscillation plat...
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WO/2018/142790A1 |
When an arm part of this tuning fork-type vibrator flexes towards the lid of a package due to an external impact, by allowing a frequency adjustment metal film, from which a portion has been removed, to contact the inner surface of the l...
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WO/2018/135650A1 |
This method for producing an electronic component is characterized by comprising: a first step wherein a base member (137) is provided on a first main surface (132a) of a first substrate (130); a second step wherein the base member (137)...
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WO/2018/122848A1 |
This invention provides electromechanical resonators based on metal chalcogenide nanotubes. The invention further provides methods of fabrication of electromechanical resonators and methods of use of such electromechanical resonators.
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WO/2018/125165A1 |
The RF filters used in conventional mobile devices often include resonator structures, which often require free-standing air-gap structure to prevent mechanical vibrations of the resonator from being damped by a bulk material. A method f...
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WO/2018/125157A1 |
Modern RF front end filters feature acoustic resonators in a film bulk acoustic resonator (FBAR) structure. An acoustic filter is a circuit that includes at least (and typically significantly more) two resonators. The acoustic resonator ...
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WO/2018/116717A1 |
The present invention provides a method for manufacturing an elastic wave device in which breakage and chipping of a piezoelectric substrate do not easily occur. The method for manufacturing an elastic wave device comprises: a step for p...
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WO/2018/116651A1 |
Protruding portions which are formed at the time of frequency coarse adjustment that is performed by irradiating a thick frequency adjustment metal film of a tuning fork-type vibrating reed with a beam in a wafer state, and which protrud...
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WO/2018/100840A1 |
In order to provide an elastic wave device in which burrs attributable to a metal layer such as a wiring electrode and the like are not easily produced, this elastic wave device 1 is provided with: a piezoelectric body 2 having a princip...
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WO/2018/096797A1 |
A piezoelectric monocrystalline substrate 6 is made of LiAO3 (where A is one or more elements selected from the group consisting of niobium and tantalum). A joint layer 3A is made of an oxide of one or more elements selected from the gro...
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WO/2018/095051A1 |
An SMD quartz resonator, comprising a ceramic base (1), the ceramic base (1) being provided with a resonant cavity, characterized in that, a metal coating (3) is disposed on the frame of the ceramic base (1), and a metal cover plate (2) ...
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WO/2018/092872A1 |
A piezoelectric vibration element manufacturing method comprises: a step of forming, from a piezoelectric substrate, an assembly substrate (100) which is provided with a plurality of crosspiece portions (120) extending in a first directi...
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WO/2018/093137A1 |
A surface acoustic wave element package according to the present invention includes: a surface acoustic wave element including a piezoelectric substrate, and including an IDT electrode and a plurality of electrodes formed on the piezoele...
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WO/2018/088093A1 |
Provided are: a method for manufacturing a substrate having exceptional heat dissipation, and little loss with respect to high frequency waves, without requiring a high-temperature process in which diffusion of metal impurities occurs; a...
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WO/2018/085268A1 |
A layer sequence is proposed that comprises first and second layers that are deposited atop one another in alternation, wherein the first layers (SC1, SC2) comprise SiC1 -xHx and the second layers (SOC1, SOC2) comprise SiOC(H).
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WO/2018/079181A1 |
[Problem] To provide a frequency adjustment method for a piezoelectric oscillation device, the method responding to microminiaturization and enabling frequency adjustment without decreasing frequency adjustment accuracy. [Solution] A fre...
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WO/2018/078472A1 |
A superconducting microwave device (400) is provided. A left-handed resonator (215) include at least one unit cell (205). A non-linear dispersive medium (405) is connected to the left-handed resonator (215), such that one end of the left...
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WO/2018/070221A1 |
A production method for a piezoelectric oscillator, the method including: a step for preparing a piezoelectric oscillation element (10) that has a piezoelectric piece (11), a pair of excitation electrodes (14a, 14b) that are respectively...
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WO/2018/070336A1 |
A piezoelectric vibrator (1) is provided with: a piezoelectric vibration element (10); a base member (30) including a first principal surface (32a) on which the piezoelectric vibration element (10) is held by conductive holding members (...
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WO/2018/066653A1 |
[Problem] The objective of the present invention is to provide a method of manufacturing a composite substrate configured to include a piezoelectric layer having a low variation in an amount of Li, and a support substrate. [Solution] Thi...
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WO/2018/063284A1 |
Techniques are disclosed for forming high frequency film bulk acoustic resonator (FBAR) devices that include a bottom electrode formed of a two-dimensional electron gas (2DEG). The disclosed FBAR devices may be implemented with various g...
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WO/2018/063299A1 |
A bulk acoustic resonator architecture is fabricated by epitaxially forming a piezoelectric film on a top surface of post formed from an underlying substrate. In some cases, the acoustic resonator is fabricated to filter multiple frequen...
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WO/2018/063294A1 |
Techniques are disclosed for forming integrated circuit film bulk acoustic resonator (FBAR) devices having multiple resonator thicknesses on a common substrate. A piezoelectric stack is formed in an STI trench and overgrown onto the STI ...
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WO/2018/061356A1 |
The purpose of the present invention is to provide a piezoelectric vibrator, a manufacturing method for a piezoelectric vibrator and an adjustment device which enable the resonance frequency of a piezoelectric vibrator to be adjusted aft...
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WO/2018/057071A1 |
A bulk acoustic wave resonator apparatus includes a resonator member having an annulus shape, and at least one anchor structure coupling the resonator member to a substrate. A perimeter of the resonator member is at least partially defin...
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WO/2018/047876A1 |
The invention comprises: a crystal oscillation element (10) which has a crystal piece (11), a pair of excitation electrodes (14a, 14b) provided so as to face mutually opposite both principal surfaces (12a, 12b) of the crystal piece (11),...
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WO/2018/043496A1 |
Provided is an elastic wave device that can easily perform frequency adjustment of a plurality of band-pass-type filers configured on the same piezoelectric substrate. An elastic wave device 1 is provided with: a first band-pass-type fil...
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WO/2018/038915A1 |
A single-die multi-FBAR (film bulk acoustic resonator) device (200) includes multiple FBARs (202, 204, 206) having different resonant frequencies formed over a single substrate (220). The FBARs include piezoelectric layers (212, 214, 216...
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WO/2018/021296A1 |
An oscillation element comprises a crystal piece, a pair of excitation electrodes, and a pair of pad portions. The crystal piece includes a pair of main surfaces, and a side surface which connects the outer edges of the pair of main surf...
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WO/2018/016169A1 |
Provided is a surface acoustic wave device composite substrate in which a piezoelectric single crystal film is not entirely peeled off even when being heated to 400°C or higher in a step after bonding. The composite substrate is manufac...
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WO/2018/016314A1 |
Provided is a high-performance surface acoustic wave device composite substrate which has good temperature characteristics and in which spurious caused by the reflection of a wave on a joining interface between a piezoelectric crystal fi...
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WO/2018/012279A1 |
The present invention addresses the problem of providing a substrate for surface acoustic wave elements, which has high thermal conductivity. A substrate for surface acoustic wave elements according to the present invention is characteri...
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WO/2018/008651A1 |
The present invention improves the piezoelectric constant of a GaN piezoelectric film. A piezoelectric film which is formed of a gallium nitride crystal having a wurtzite structure, and wherein the gallium nitride crystal contains at lea...
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WO/2018/006883A1 |
A method for preparing a film bulk acoustic wave device by using a film transfer technology comprises: 1) providing an oxide single-crystal substrate (1); 2) implanting ions from an implantation surface (11) into the oxide single-crystal...
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WO/2018/006754A1 |
A contactless adhesive spray system utilized in producing a surface-mount quartz crystal oscillator comprises a full array of substrate bases (1), chips (4), and an adhesive spray system. The full array of substrate bases (1) and the chi...
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WO/2018/006755A1 |
The invention relates to the field of electronic devices, and specifically, to a full-array die attachment device and method utilized in producing a surface-mount quartz crystal oscillator. The full-array die attachment device comprises ...
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WO/2018/005337A1 |
A component (B) is specified which comprises a functional structure (FS) on a carrier (TR) that is spanned by a thin-layer covering (DSA) resting on said carrier. A first wiring layer (VE1) is applied onto or in the thin-layer covering a...
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WO/2018/002440A1 |
The present disclosure describes micromechanical resonator, a resonator element for the resonator, and a method for trimming the resonator. The resonator comprises a resonator element having a length, a width, and a thickness, where the ...
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WO/2018/005351A1 |
A component (B) comprising a carrier (TR), on which a functional structure (FS) is covered by a thin-layer covering (DSA) spanning across and resting on the carrier. On a planarization layer arranged above the thin-layer covering (DSA), ...
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WO/2018/003837A1 |
A multiplexer (1) provided with: an LB band filter (10) disposed on a first path linking a common terminal (Port1) and an individual terminal (Port2); an HB band filter (20) disposed on a second path linking the common terminal (Port1) a...
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WO/2017/222990A1 |
Proposed is a layer structure (1100, 1030) comprising a crystalline piezoelectric III-N layer (1110, 1032) epitaxially grown over a metal layer which is epitaxially grown over a rare earth oxide layer on a semiconductor (1102, 1002). The...
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WO/2017/221518A1 |
The present invention provides an elastic wave device which achieves miniaturization and does not tend to cause contact between a cover member and an IDT electrode. An elastic wave device 1, wherein an IDT electrode 9 constituting a long...
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WO/2017/218690A1 |
Bandpass filters and methods of designing bandpass filters are disclosed. A bandpass filter includes a plurality of series acoustic resonators connected in series between an input and an output, and a plurality of\ shunt acoustic resonat...
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WO/2017/212774A1 |
Provided is an elastic wave device having excellent moisture resistance. An elastic wave device 1 is provided with: a supporting substrate 2, the upper surface of which is provided with a recessed section 2c; a piezoelectric thin film 4 ...
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WO/2017/212677A1 |
The present invention adjusts resonance frequency without impairing the piezoelectric property of a resonator. The present invention comprises: a step for preparing a lower cover; a step for disposing a substrate such that the lower surf...
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WO/2017/208866A1 |
The present invention is provided with: a crystal oscillation element (100) including a crystal strip (110) that has principal surfaces facing each other, a first excitation electrode (130) and a second excitation electrode (140) provide...
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WO/2017/208568A1 |
The present invention inhibits a resonance frequency from being impacted by an electric charge charged to an insulator layer on a resonator or a conductive layer on the insulator layer. The present invention comprises: a first electrode;...
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