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WO/2021/010164A1 |
An electronic component (100) comprises: a substrate (110); functional elements (120) formed on the substrate (110); columnar conductors (140) protruding from the substrate (100); a cover part (130) which is supported by the columnar con...
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WO/2021/009008A1 |
At least three acoustic filters circuits FC are arranged on a single chip CH. At least two of them are electrically connected already on the chip for multiplexing. This reduces space consumption and leads to smaller device size.
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WO/2021/002434A1 |
The present invention comprises a substrate, an electrode film, and a piezoelectric film which is a polycrystalline film comprising an alkali niobate having a perovskite structure represented by the compositional formula (K1-xNax)NbO3 (0...
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WO/2021/002047A1 |
[Problem] To provide a joined body that enables improvement of a Q value of an elastic wave element. [Solution] A joined body 9A includes a support substrate 6, a piezoelectric material substrate 1A, and a silicon oxide layer 2 between t...
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WO/2020/259661A1 |
The present invention provides a high-frequency surface acoustic wave resonator and a preparation method therefor. The high-frequency surface acoustic wave resonator comprises: a high-wave-velocity supporting substrate, a piezoelectric f...
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WO/2020/262607A1 |
Provided is an elastic wave device in which a substrate has a piezoelectric predetermined region on a first major surface facing one side in a direction normal to the substrate. An excitation electrode is positioned in the predetermined ...
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WO/2020/255474A1 |
A resonance device 1 is provided with: an MEMS substrate 40 including a resonator 10; an upper lid 30 provided to seal an oscillation space S of the resonator 10; and a grounding part 50 located between the MEMS substrate 40 and the uppe...
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WO/2020/252962A1 |
An acoustic wave device and a preparation method therefor, and a temperature control method of the acoustic wave. The preparation method comprises: respectively providing a first substrate and a second substrate (S110); forming an acoust...
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WO/2020/250490A1 |
[Problem] To improve the bonding strength when bonding a piezoelectric material substrate to a support substrate formed from quartz, and to prevent delamination even if the piezoelectric material substrate is thin. [Solution] A composite...
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WO/2020/250491A1 |
[Problem] To improve the bonding strength when bonding a piezoelectric material substrate formed from lithium tantalate or the like to a support substrate formed from quartz, and to prevent delamination even if the piezoelectric material...
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WO/2020/238509A1 |
A bulk acoustic wave resonator, comprising: a substrate; an acoustic mirror; a bottom electrode, provided on the substrate; a top electrode (50), opposite to the bottom electrode and having an electrode connection portion; and a piezoele...
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WO/2020/238286A1 |
Provided in the present application are a resonant thin film layer, a resonator and a filter; the resonant thin film layer comprises a first electrode layer disposed on a first wafer, a piezoelectric layer disposed on the first electrode...
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WO/2020/234238A1 |
A BAW resonator with reduced losses is provided. The BAW resonator (BAWR) has a first gap (G1) arranged between the piezoelectric material (PM) and a first electrode (EL1) selected from the bottom electrode (BE) and the top electrode (TE...
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WO/2020/228284A1 |
The present invention provides a method for preparing a solid reflection type bulk acoustic wave resonator, comprising the following steps of: taking a piezoelectric material subjected to ion implantation, growing a reflection layer belo...
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WO/2020/228285A1 |
The present invention relates to the technical field of preparation of cavity type bulk acoustic wave resonators, and in particular to a method for preparing a cavity type bulk acoustic wave resonator and the cavity type bulk acoustic wa...
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WO/2020/227396A1 |
Methods of fabricating a bulk acoustic wave resonator structure for a fluidic device can include a first step of disposing a first conductive material over a portion of a first surface of a substrate to form at least a portion of a first...
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WO/2020/223001A1 |
A method for manufacturing a Bulk Acoustic Wave (BAW) resonator module is provided. The method includes providing a substrate (400), defining a platform region on the surface of the substrate (430), disposing a BAW resonator device (440)...
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WO/2020/218369A1 |
A sensor device comprising: a substrate having a substrate surface; a first IDT electrode positioned upon the substrate surface; a second IDT electrode positioned upon the substrate surface; a waveguide; and a protective film. The wavegu...
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WO/2020/212648A1 |
A microelectromechanical (MEMS) resonator, comprising a spring-mass system having a first weight portion (M1), a second weight portion (M2), and a central spring portion (SP) in between the weight portions.
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WO/2020/208308A1 |
A microelectromechanical (MEMS) resonator, comprising a resonator structure having a plurality of beam elements (1-6) and connection elements (C1-C5) with certain geometry, where the plurality of beam elements (1-6) are positioned adjace...
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WO/2020/203044A1 |
The present invention includes: a step for forming an excitation electrode, an extraction electrode, and a first sealing frame on each main surface of a crystal piece 11; a step for forming a second sealing frame on a respective main sur...
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WO/2020/206433A1 |
Acoustic resonator devices and filters are disclosed. A piezoelectric plate is attached to a substrate, a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. A first conductor pattern is formed on a...
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WO/2020/199509A1 |
A bulk acoustic wave resonator and a manufacturing method therefor, a filter and a radio-frequency communication system. A bottom electrode protrusion portion (1041) and a top electrode recess portion (1081), which are formed on the peri...
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WO/2020/202961A1 |
This tuning-fork-type piezoelectric vibrator (1) comprises: a base (50); a tuning-fork-type piezoelectric vibrating element (10) that has a pair of vibrating arms (60a, 60b) and a pair of connection electrodes (86a, 86b); and a base memb...
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WO/2020/202966A1 |
An electronic device (1), provided with: an electronic component (10) having a mechanical vibration unit (17); a base substrate (30) on which the electronic component (10) is mounted; an intermediate layer (40) forming, between the inter...
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WO/2020/203144A1 |
The present invention suppresses the occurrence of a burr remaining on a quartz oscillating element. This quartz oscillating element manufacturing method includes a step S in which a quartz piece 130, a crosspiece section 110, and a supp...
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WO/2020/199505A1 |
A bulk acoustic resonator and a manufacturing method thereof, a filter, and a radio frequency communication system. A lower electrode projection (1041) and an upper electrode projection (1081) formed at the periphery of a piezoelectric r...
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WO/2020/199299A1 |
A method for manufacturing a piezoelectric thin film resonator on a non-silicon substrate. The method comprises the following steps: depositing a copper thin film (202) on a silicon wafer (201); coating a photoresist (203) on the copper ...
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WO/2020/202962A1 |
A tuning fork type piezoelectric vibrator (1) is provided with: a tuning fork type piezoelectric vibration element (10) that has a basic part (50), a pair of vibration arm parts (60a, 60b), and a pair of connection electrodes (86a, 86b);...
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WO/2020/195830A1 |
A manufacturing method for a piezoelectric vibrator (1) comprises: a step of forming a piezoelectric vibration element (10) in which a pair of excitation electrodes (14a, 14b) each includes an underlayer and a surface layer and the under...
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WO/2020/196139A1 |
A photosensitive resin composition according to the present invention is a photosensitive resin composition comprising (a) an alkali-soluble polyimide, (b) an unsaturated bond-containing compound, (c) a thermally crosslinkable compound, ...
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WO/2020/195818A1 |
The present invention comprises: a crystal vibration element 10 that includes a crystal piece 11 having a center section 11a and a peripheral section 11b, a pair of excitation electrodes 14 provided on the center section 11a, and a pair ...
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WO/2020/195740A1 |
In this electronic component, an electronic element has a first surface. An enclosing member having insulating properties has a second surface and is in close contact with the perimeter of the electronic element while exposing the first ...
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WO/2020/195741A1 |
Provided is an electronic component in which an insulative enclosure member is closely adhered to a periphery of the electronic element while exposing a first surface of the electronic element from a second surface of the enclosure membe...
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WO/2020/191750A1 |
Provided are a crystal oscillator and a manufacturing method and apparatus thereof. The crystal oscillator comprises a silicon-based substrate (10) and a crystal oscillation unit (40). The silicon-based substrate (10) is provided with a ...
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WO/2020/194810A1 |
Provided are: a resonance device in which it is possible to minimize loss of vacuum within a vibration space of a resonator; and a production method for such a resonance device. This resonance device 1 is provided with: a MEMS substrate ...
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WO/2020/197334A1 |
The present invention relates to a stand-alone active EMI filter module and a manufacturing method thereof, wherein the volume of each element constituting the EMI filter module can be reduced , thereby implementing a single module unit ...
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WO/2020/189115A1 |
Provided is a composite substrate that can enhance stability of filter characteristics against temperature change. A composite substrate 1 is a composite substrate that is used for an electronic device. The composite substrate 1 is cha...
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WO/2020/181976A1 |
An MEMS device assembly comprises: an MEMS device having a surface to be encapsulated; and an encapsulation film (14) used to form an encapsulation space (17) for encapsulation of the MEMS device, wherein the encapsulation film (14) has ...
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WO/2020/181816A1 |
Provided in the present invention are a cavity-type bulk acoustic resonator without the need to prepare a sacrificial layer, and a preparation method therefor, comprising the following steps: taking a piezoelectric single crystal wafer s...
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WO/2020/181815A1 |
The present invention relates to the technical field of single crystal thin film preparation, and in particular, to a preparation method for a spliced small-sized single crystal thin film, a single crystal thin film and a resonator. The ...
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WO/2020/174915A1 |
A piezoelectric vibrating device of the present invention is provided with: a piezoelectric vibration plate that has first and second excitation electrodes respectively formed on both main surfaces, and has first and second mounting term...
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WO/2020/175234A1 |
This elastic surface wave device (1) comprises: a piezoelectric substrate (20) having main surfaces (20a, 20b); and an IDT electrode (40) disposed on the main surface (20a) among the main surfaces (20a, 20b), the main surface (20a) being...
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WO/2020/173631A1 |
This invention focuses on minimizing the hot spots on a filter chip by creating thermal radiators using the mechano-acoustic structures and connection circuitry. A gradual increase of metal to wafer relation is made to provide better hea...
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WO/2020/173632A1 |
An electro-acoustic resonator comprises an acoustic mirror (120) disposed on a carrier substrate (110), a bottom electrode (130) and a piezoelectric layer (140). An aluminum seed layer (180) is disposed on the piezoelectric layer and a s...
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WO/2020/169304A1 |
An improved BAW resonator is provided. The resonator has a compensation layer (CL) between the bottom electrode (BE) and the piezoelectric layer (PL) to compensate lattice mismatch. The compensation layer (CL) may comprise GaN, InN, InGa...
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WO/2020/171900A1 |
Aspects of the disclosure are directed to a bandpass filter including four BAW resonators in a full lattice arrangement with two matching inductors at the input and output terminal. Further aspects of the disclosure are directed to combi...
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WO/2020/163973A1 |
Provided is an air-gap type piezoelectric bulk acoustic wave device heterogeneous integration method, comprising: using a soft seal to lift a bulk acoustic wave device thin film (320) from a donor substrate; using the soft seal to place ...
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WO/2020/155192A1 |
A resonator and a semiconductor device. The resonator comprises: a substrate (100); and a multilayer structure (200) formed on the substrate (100), the multilayer structure (200) comprising a lower electrode layer (203), a piezoelectric ...
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WO/2020/092414A3 |
Resonator devices, filter devices, and methods of fabrication are disclosed. A resonator device includes a substrate and a single-crystal piezoelectric plate having parallel front and back surfaces. An acoustic Bragg reflector is sandwic...
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