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WO/2022/266789A1 |
The present disclosure provides an acoustic resonator based on a high-crystallinity doped piezoelectric film. The acoustic resonator comprises: a substrate; a seed layer disposed on the substrate, a Bragg reflection structure being forme...
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WO/2022/269721A1 |
[Problem] To provide a surface acoustic wave device that can further reduce the sound velocity of a propagating surface acoustic wave, and that can be made more compact and have a lower frequency. [Solution] A piezoelectric substrate 11 ...
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WO/2022/269970A1 |
A crystal oscillator 1 comprises a crystal oscillator element, a substrate 30 having a main surface 32a to which the crystal oscillator element is mounted with a conductive holding member therebetween, and a lid member that is joined to ...
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WO/2022/264914A1 |
The purpose of the present invention is to suppress the generation of an excessively bent portion of a piezoelectric layer. An elastic wave device according to the present invention comprises: a support substrate member provided with a s...
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WO/2022/265071A1 |
The present invention reduces spurious emissions in a passband. This elastic wave device comprises: a support substrate having thickness in a first direction; an intermediate layer provided on the support substrate; a piezoelectric layer...
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WO/2022/262256A1 |
The present disclosure relates to a piezoelectric structure having an optimized electromechanical coupling coefficient and a manufacturing method therefor, and a piezoelectric resonator comprising the piezoelectric structure. The piezoel...
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WO/2022/264933A1 |
Provided is an elastic wave device that can suppress a higher-order mode in a wide band and can improve frequency/temperature characteristics. An elastic wave device 1 comprises: a support substrate 3; an intermediate layer 4 that is p...
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WO/2022/259763A1 |
The present invention suppresses cost increases. A high frequency module (1) is provided with a mounting substrate (2), a first electronic component (3) and a second electronic component (4), a resin layer, and a metal layer (8). The fir...
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WO/2022/259591A1 |
Provided is a composite substrate in which occurrence of spurious emission is suppressed. The composite substrate according to an embodiment of the present invention has a support substrate, an intermediate layer, and a piezoelectric lay...
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WO/2022/260015A1 |
Provided is a high frequency module that enables an increase in the freedom of design of an externally connected terminal, and that has low profile. A high frequency module (1) is provided with a mounting substrate (2), a first electroni...
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WO/2022/259932A1 |
Provided is an elastic wave device in which warping and peeling of a film is less likely to occur and deterioration of characteristics is less likely to occur. An elastic wave device 1 includes a ScAIN film 3 that has a first main surf...
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WO/2022/259935A1 |
The present invention provides an elastic wave device which has an aluminum nitride film containing scandium, in which film warpage and peeling are unlikely to occur, and in which piezoelectric properties are unlikely to deteriorate. P...
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WO/2022/259934A1 |
Provided is an elastic wave device having a scandium-containing aluminum nitride film that is less likely to warp and come off, and has a piezoelectric characteristic that is less likely to deteriorate. An elastic wave device 1 compris...
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WO/2022/259627A1 |
Provided is a composite substrate that can contribute to improving the performance of a SAW filter. A composite substrate according to an embodiment of the present invention comprises: a support substrate; and a piezoelectric layer dispo...
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WO/2022/255482A1 |
The present invention suppresses the occurrence of cracks in a piezoelectric layer. This elastic wave device comprises: a support member having a thickness in a first direction and comprising a support substrate; a piezoelectric layer pr...
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WO/2022/255113A1 |
A crystal diaphragm (10) is provided with a vibration unit (11), an outer frame (12) which surrounds the outer periphery of the vibration unit (11), and a holding unit (13) which links the vibration unit (11) and the outer frame (12), wh...
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WO/2022/255082A1 |
Provided is an elastic wave device capable of improving attenuation characteristics and resin fillability of a sealing resin. An elastic wave device 1 has a first elastic wave element chip 11 and a second elastic wave element chip 12 m...
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WO/2022/255304A1 |
Provided is a piezoelectric bulk wave device that hardly causes a crack in a piezoelectric layer. The piezoelectric bulk wave device 10 according to the present invention comprises: a support member 13 including a support substrate 16;...
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WO/2022/251596A1 |
An unapodized interdigital transducer apparatus, system, and associated methods. The apparatus includes a substrate, a pair of first electrodes oppositely positioned on the substrate, where an aperture is formed between the pair of first...
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WO/2022/246749A1 |
The present invention relates to the technical field of resonators, in particular to a piezoelectric MEMS resonator and a method for forming same, and an electrical device. The piezoelectric MEMS resonator of the present invention has on...
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WO/2022/246601A1 |
The present application relates to an acoustic wave filter packaging structure and a manufacturing method therefor, and an electronic device. The packaging structure comprises an acoustic wave filter packaging module, which comprises a f...
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WO/2022/247902A1 |
The present invention relates to a bulk acoustic resonator, which comprises a substrate, a bottom electrode, a top electrode, an acoustic mirror, and a piezoelectric layer; the substrate comprises a silicon carbide substrate portion, and...
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WO/2022/250016A1 |
Provided is an elastic wave device capable of suppressing an increase in insertion loss and improving IMD. This elastic wave device 1 comprises: a support substrate 3; an intermediate layer 4 provided on the support substrate 3; a piez...
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WO/2022/246549A1 |
A signal processing circuit has a first signal loop with a first signal processing block and a first feedback path that extends around the first signal processing block, the first signal processing block having a frequency dependence tha...
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WO/2022/249926A1 |
Provided is a piezoelectric bulk wave device capable of highly accurately adjusting a frequency. A piezoelectric bulk wave device 10 according to the present invention comprises: a support member 13 including a support substrate 16; a ...
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WO/2022/241623A1 |
A chip encapsulation structure, comprising a substrate, a bare chip mounted upside down on the substrate, at least one conductive bump located between the substrate and the bare chip, and a conductive sealing ring. A functional element i...
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WO/2022/244671A1 |
A filter (1) comprises: a substrate (100) including a piezoelectric body layer and having a first signal electrode (T10) and a second signal electrode (T20); a filter circuit section (10) provided on a first path (r1) connecting the firs...
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WO/2022/244635A1 |
Provided is a piezoelectric bulk wave device capable of suppressing leakage of elastic waves at a main surface of a piezoelectric layer. A piezoelectric bulk wave device 10 according to the present invention comprises: a support member...
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WO/2022/242869A1 |
A surface acoustic wave, SAW, apparatus (100) includes a piezoelectric substrate (132) with a surface (130) configured to support propagation of SAW. An interdigital transducer (102), IDT, disposed on the surface of the substrate is conf...
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WO/2022/245752A1 |
An acoustic wave device includes a piezoelectric layer and first and second resonators. The first resonator includes a first functional electrode and a first dielectric film on the piezoelectric layer. The second resonator includes a sec...
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WO/2022/242092A1 |
A high isolation and anti-glue SAW duplexer, having a transmitting filter and a receiving filter. The isolation degree of a duplexer is improved by adjusting the position of a parallel resonant arm of the receiving filter and optimizing ...
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WO/2022/244746A1 |
Provided is an elastic wave device capable of adjusting the frequency of a main mode without causing variations in frequencies at which unwanted waves occur. An elastic wave device 10 according to the present invention is provided with...
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WO/2022/243908A2 |
A resonator device comprising a layer of piezoelectric material (2) provided with one pair of end faces (3, 4) in such a way as to selectively generate an acoustic wave propagating from said faces (3, 4); at least one layer of metallic m...
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WO/2022/242776A1 |
A resonator, which comprises a resonance layer, a substrate and a barrier layer, the barrier layer being located on the substrate, the barrier layer and the substrate constituting a cavity, the cavity being used for accommodating the res...
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WO/2022/240642A1 |
An acoustic resonator device with low thermal impedance has a substrate and a single-crystal piezoelectric plate having a back surface attached to a top surface of the substrate via a bonding oxide (BOX) layer. An interdigital transducer...
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WO/2022/239719A1 |
A passive electronic component support substrate 1 comprises: a semiconductor substrate 10; a charge-trapping layer 11 provided on the semiconductor substrate 10 and having a high density of crystal defects in relation to the semiconduct...
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WO/2022/239630A1 |
Provided is a piezoelectric bulk wave device capable of suppressing ripples in frequency characteristics. The piezoelectric bulk wave device 10 according to the present invention comprises: a support member 13 including a silicon subst...
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WO/2022/241033A1 |
Apparatus and associated methods relate to forming an epitaxial layer of aluminum (14') on an aluminum-nitride compound (12'). The aluminum is epitaxially grown on the crystalline aluminum- nitride compound by maintaining temperature of ...
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WO/2022/239601A1 |
A switch device (10) comprises: a common terminal (Pan); a switch circuit (1) that switches electrical conduction between terminals (Ps10 and Ps101); a switch circuit (2) that switches electrical conduction between terminals (Ps20 and Ps...
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WO/2022/233074A1 |
The present application relates to a piezoelectric transducer preparation method and a piezoelectric transducer. The method comprises: first, preparing a bottom acoustic reflection layer on a carrier wafer; then preparing a top acoustic ...
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WO/2022/236185A2 |
Acoustic resonator devices, filters, and methods. An acoustic resonator includes a substrate and a piezoelectric plate, a portion of the piezoelectric plate being a diaphragm spanning a cavity in the substrate. A conductor pattern on a f...
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WO/2022/228486A1 |
The present invention relates to a bulk acoustic resonator, comprising a substrate, an acoustic mirror, a bottom electrode, a top electrode, and a piezoelectric layer. An overlapping area of the acoustic mirror, the bottom electrode, the...
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WO/2022/230723A1 |
The present invention provides an elastic wave device with which fractional bandwidth can easily be adjusted and that is not susceptible to element capacity being decreased. The elastic wave device 10 according to the present invention...
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WO/2022/230681A1 |
The present invention mitigates transmission of heat generated in an electronic component to a mounting board. A high frequency module (1) is provided with a mounting board (3), a first electronic component (4A), a first resin layer (51)...
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WO/2022/226914A1 |
The present invention provides a piezoelectric MEMS silicon resonator having a beam structure, a forming method therefor, and an electronic device. The forming method comprises: providing, as a substrate, an SOI silicon wafer having a lo...
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WO/2022/228385A1 |
The present invention relates to a bulk acoustic wave resonator, comprising: a substrate; a resonant structure, which comprises a piezoelectric layer, a bottom electrode, and a top electrode; and an acoustic mirror. A support layer is pr...
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WO/2022/227928A1 |
The present invention relates to a bulk acoustic resonator, wherein a piezoelectric layer of the resonator is a single-crystal lithium niobate piezoelectric layer or a single-crystal lithium tantalate piezoelectric layer; and the electro...
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WO/2022/226912A1 |
Disclosed in the present invention are a resonator and a method for forming same, and an electronic device. The method comprises: with regard to an SOI wafer comprising a top silicon layer, a buried oxide layer and a base silicon layer, ...
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WO/2022/230683A1 |
Provided is a high-frequency module capable of improving the heat dissipation of first electronic components. A high-frequency module (1) comprises a mounting substrate (3), first electronic components (17, 12A), a first resin layer (51)...
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WO/2022/226911A1 |
Disclosed in the present invention are a piezoelectric MEMS silicon resonator and a forming method therefor, and an electronic device. The piezoelectric MEMS silicon resonator comprises: a silicon substrate; a lower cavity, wherein a top...
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