Document |
Document Title |
WO/2023/142483A1 |
The present disclosure relates to the field of resonators. Disclosed are an interdigital transducer structure, a resonator, a manufacturing method for a resonator, and a filter. The interdigital transducer structure comprises a first bus...
|
WO/2023/145878A1 |
This elastic wave device comprises an element base board, a piezoelectric layer, a funtional electrode provided for the piezoelectric layer, and a mounting base board. The element base board has a hollow portion positioned so as to at le...
|
WO/2023/143005A1 |
Provided in the present invention are a high-bandwidth silicon back face etching type film bulk acoustic resonator, and a preparation method therefor. The bulk acoustic resonator sequentially comprises a substrate, a dense oxide film, a ...
|
WO/2023/145626A1 |
This piezoelectric body has a first part, a second part and a third part. In a plan view, at least a portion of the second part is located on one side of a first direction relative to the first part. At least a portion of the third part ...
|
WO/2023/145483A1 |
In the present invention, a bonding pad for wire bonding is formed on the outer surface of a first sealing plate of a piezoelectric oscillator having the first sealing plate and a second sealing plate, which are joined to the two main su...
|
WO/2023/140270A1 |
A method for manufacturing an elastic wave element according to the present disclosure is for manufacturing an elastic wave element that includes a support substrate, a piezoelectric layer provided on the support substrate, and a functio...
|
WO/2023/140070A1 |
Provided is a method for adjusting the frequency of a quartz oscillator (100), wherein: a metal film (36) for frequency adjustment that comprises a base metal layer (36a) and a metal layer (36b) layered thereon is formed on a first princ...
|
WO/2023/140362A1 |
This acoustic wave device comprises: a support substrate including a support member and an intermediate layer provided on the support member; a piezoelectric body layer provided on the intermediate layer; and a function electrode provide...
|
WO/2023/139839A1 |
A piezoelectric device (101) comprises: a base part (10) having an opening (9); and a vibration layer (12) disposed on the upper side of the base part (10). The vibration layer (12) has a fixation part (41) fixed to the base part (10) an...
|
WO/2023/139979A1 |
The present invention improves the heat dissipation and shielding properties of a high-frequency module. A high-frequency module (100) has an electronic component (1) that has: a principal surface (11) that is on the opposite side from a...
|
WO/2023/137769A1 |
The embodiments of the present application relate to the technical field of semiconductors. Provided are an acoustic filter and an electronic device by means of which the filtering performance of an acoustic filter can be improved. The a...
|
WO/2023/140354A1 |
Provided is an elastic wave device that can inhibit unnecessary waves near the resonant frequency or near the anti-resonant frequency, even in a configuration in which a mass-addition film is provided to an edge region. This elastic wa...
|
WO/2023/139819A1 |
This crystal resonator (1) comprises: a crystal substrate (10) having a first main surface (10A) and a second main surface (10B) facing the first main surface (10A); a first comb-like electrode (IDT1) provided on the first main surface (...
|
WO/2023/140331A1 |
The present invention suppresses cracking in a piezoelectric layer. This elastic wave device comprises: a support member including a support substrate having a thickness in a first direction; a piezoelectric layer provided in the first d...
|
WO/2023/140327A1 |
This elastic wave device comprises: a supporting board including a supporting member and a junction layer provided on the supporting member; a piezoelectric layer provided on the junction layer; a function electrode provided on the piezo...
|
WO/2023/140272A1 |
In the present invention, an elastic wave device comprises a support substrate, a piezoelectric layer provided on the support substrate, a functional electrode provided on the piezoelectric layer, a cavity part, and at least one protrusi...
|
WO/2023/135844A1 |
The invention provides a composite substrate having exceptional durability. This method for producing a composite substrate according to an embodiment of the present invention comprises: forming a first layer on a lower surface side of a...
|
WO/2023/134962A1 |
Certain aspects of the present disclosure provide a surface acoustic wave (SAW) device with one or more intermediate layers for reduced self-heating and methods for fabricating such a SAW device. One example SAW device generally includes...
|
WO/2023/136293A1 |
Provided is an elastic wave device that can suppress unnecessary waves near the resonant frequency. This elastic wave device 10 comprises: a piezoelectric substrate having a support member including a support substrate, and a piezoelec...
|
WO/2023/136156A1 |
This piezoelectric vibration device comprises: a piezoelectric vibrator including a piezoelectric vibration plate, and first and second sealing plates that hermetically seal a vibrating portion of the piezoelectric vibration plate; a bas...
|
WO/2023/134252A1 |
The present invention relates to radio frequency filtering technology, and disclosed are a BAW filter structure and a preparation method. With respect to a stress problem in the prior causing industrial production to be unviable, the pre...
|
WO/2023/136291A1 |
Provided is an elastic wave device in which the frequency at which an unwanted wave is generated can be distanced from an anti-resonance frequency. An elastic wave device 10 according to the present invention comprises: a piezoelectric...
|
WO/2023/136294A1 |
Provided is an elastic wave device in which the frequency at which an unwanted wave is generated can be moved away from an anti-resonance frequency. An elastic wave device 10 according to the present invention is provided with: a piezo...
|
WO/2023/136292A1 |
Provided is an elastic wave device that can suppress loss degradation without easily damaging the elastic wave device. An elastic wave device 10 according to the present invention comprises: a piezoelectric substrate 12 having a suppor...
|
WO/2023/132354A1 |
A filter device having one or more elastic resonators, wherein the one or more elastic resonators each have a piezoelectric film that has piezoelectric properties, and an IDT electrode that has a plurality of electrode fingers and is pos...
|
WO/2023/127884A1 |
The present invention comprises a piezoelectric body, two excitation electrodes overlapping the surface of the piezoelectric body, two extraction electrodes that are extracted from the two excitation electrodes, and a temperature-sensiti...
|
WO/2023/127730A1 |
This piezoelectric device comprises a piezoelectric element, a mounting substrate, and a temperature sensitive element. The mounting substrate has a recess which is hermetically sealed. The piezoelectric element is mounted on a bottom su...
|
WO/2023/126020A1 |
The present application relates to the technical field of filters. Particularly provided are a filter, a multiplexer, a radio frequency front end, and a method for manufacturing the filter. The filter in the present application comprises...
|
WO/2023/128416A1 |
The present invention is for providing a method for designing an SAW resonator and a computing device-readable recording medium on which the method is recorded, wherein, instead of directly measuring characteristics of SAW of the SAW res...
|
WO/2023/123465A1 |
The present disclosure relates to a filter, a radio frequency system, and an electronic device. The filter generally comprises two resonators arranged up and down and a first coupling layer located between the two resonators. Each resona...
|
WO/2023/124624A1 |
The present invention provides a surface acoustic wave filter, comprising: an interdigital transducer, two reflectors disposed opposite to each other on two sides of the interdigital transducer, and a plurality of parameterization units ...
|
WO/2023/125757A1 |
The present invention provides a high-bandwidth cavity type film bulk acoustic resonator and a preparation method therefor. The resonator sequentially comprises a substrate, a bonding layer, a bottom electrode, a composite piezoelectric ...
|
WO/2023/129921A1 |
An acoustic resonator device (400) includes a substrate having a surface and a piezoelectric plate having front and back surfaces, with the back surface attached to the surface of the substrate except for a portion of the piezoelectric p...
|
WO/2023/125150A1 |
Provided in the present invention are a bulk acoustic resonator capable of improving power, and a preparation method therefor. The resonator sequentially comprises a substrate, a first diamond film layer, a piezoelectric layer and a seco...
|
WO/2023/128417A1 |
The present invention relates to a SAW resonator design method, a SAW filter and a design method therefor, and a computing device-readable recording medium having same recorded thereon, which may improve a quality factor of the SAW reson...
|
WO/2023/129717A1 |
A method for fabricating a multi-layer resonator assembly includes sequentially fabricating a plurality of vertically-stacked resonator layers including, for each resonator layer of the plurality of resonator layers, depositing a dielect...
|
WO/2023/117988A1 |
A resonance spectrometer for determining characteristics of a device under test, DUT (5) based on a bias voltage (15) from a direct current, DC, source (10) and an alternating current, AC, signal (25) from an AC-source (20) is disclosed....
|
WO/2023/121866A1 |
An acoustic wave device comprises a substrate including a piezoelectric material, interdigital transducer (IDT) electrodes disposed on a surface of the substrate, a first dielectric film having a lower surface disposed on the IDT electro...
|
WO/2023/116699A1 |
The present invention provides a single-crystal film bulk acoustic resonator, a preparation method therefor, and an application thereof. The resonator sequentially comprises, from bottom to top, a substrate layer, a Bragg reflective laye...
|
WO/2023/118665A1 |
A MEMS (microelectromechanical system) resonator assembly (100), comprising a support structure (102), a resonator element (101) suspended to the support structure (102), and an actuator for exciting the resonator element (101) to a reso...
|
WO/2023/120264A1 |
This high frequency circuit (1) comprises: a switch (10) having terminals (10a, 10b, 10c, and 10d) that switches connection and disconnection between the terminal (10a) and the terminal (10b), switches connection and disconnection betwee...
|
WO/2023/120284A1 |
A high-frequency module (1) comprises: a switch (70) for switching connection and disconnection of a terminal (70a) and a terminal (70b), and switching connection and disconnection of the terminal (70a) and a terminal (70c); an inductor ...
|
WO/2023/118574A1 |
The invention relates to a method for fabricating a donor substrate comprising the steps of A: providing a manipulation substrate, B: providing a target substrate, C: attaching the target substrate to the manipulation substrate, and D: g...
|
WO/2023/118664A1 |
A MEMS (microelectromechanical system) resonator assembly (100), comprising a support structure (102), a resonator element (101 ) suspended to the support structure (102), and an actuator for exciting the resonator element (101 ) to a re...
|
WO/2023/108590A1 |
The present application discloses a high-frequency high-Q-value acoustic resonator and a manufacturing method therefor. The acoustic resonator comprises: a substrate; a release layer provided on the surface of one side of the substrate; ...
|
WO/2023/112577A1 |
The present invention addresses the problem of further increasing thermal insulation properties between a power amplifier and an electronic component. A high frequency module (1) comprises a mounting board (100), a power amplifier, an el...
|
WO/2023/108877A1 |
A micron-scale acoustic field generation device (100) based on an artificial structure and a preparation method therefor. The micron-scale acoustic field generation device (100) based on an artificial structure comprises a surface acoust...
|
WO/2023/111418A1 |
The invention relates to a planar mechanical resonator structure (1) comprising a crystalline quartz wafer portion, the parallel faces of which are perpendicular to a Z crystal axis of the quartz. The wafer portion comprises a main beam ...
|
WO/2023/113003A1 |
The present invention simplifies a pickup operation and facilities mounting on a module substrate, while mitigating degradation of frequency characteristics due to ripples. This elastic wave device comprises: a first piezoelectric layer ...
|
WO/2023/112962A1 |
Provided are a crystal oscillator and a crystal device with which an electrical signal that is in accordance with vibration can be obtained at a more appropriate ESR. A crystal oscillator (12) comprises: a crystal piece (121) that has a ...
|