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Matches 1 - 50 out of 51,107

Document Document Title
WO/2019/211926A1
A resonator (10) is provided with: a vibration part (120) having a substrate (F2) that has a main surface, a lower electrode (E1) that is formed on the main surface of the substrate (F2), a piezoelectric film (F3) that is formed on the l...  
WO/2019/206534A1
A SAW resonator that provides the possibility of adjusting the bandwidth of a bandpass filter or of a band rejection filter is provided. The SAW resonator has a piezoelectric material (PM), an electrode structure (ES, EF) above the piezo...  
WO/2019/207829A1
A resonance device (1) is provided with a resonator (10), an upper lid (30), and a lower lid (20). The resonator (10) has a vibrating part (120) including a base part (130) and a plurality of vibrating arms (135), a holding part (140), a...  
WO/2019/206986A1
An electro-acoustic resonator comprises a piezoelectric substrate (310) on which an electrode structure is disposed. The electrode structure comprises a metal layer (535) of aluminum and copper, a barrier layer (450) forming a barrier ag...  
WO/2019/206515A1
An electro-acoustic resonator such as a surface acoustic wave resonator comprises a piezoelectric substrate (310) and an electrode structure (121, 112) disposed thereon. The electrode structure comprises a seed layer (321) of a metal hav...  
WO/2019/206533A1
An improved electroacoustic SAW or BAW filter (EAF) with improved electric and/or acoustic properties is provided. The filter has a first resonator (Rl) in a first layer stack (LSI) and a second resonator (R2) in a second layer stack (LS...  
WO/2019/201520A1
A TF-SAW resonator with improved quality factor is provided. The resonator has its piezoelectric material in the form of a thin film and an electrode structure arranged on the piezoelectric layer. Pitch (P) and metallization ratio (n) ar...  
WO/2019/201521A1
A bulk acoustic wave resonator comprises a substrate (101) and a layer stack (110) having electro-acoustical properties comprising first and second electrodes (111, 112) sandwiching a piezoelectric layer (113). The layer stack extends in...  
WO/2019/201454A1
This invention relates to a method for determining element values of a filter structure having a linear sequence of coupled resonators, wherein a coupling between adjacent resonators is determined by one or more coupling factors, the met...  
WO/2019/201526A1
An electroacoustic resonator (EAR) that allows RF filters in which transversal modes are suppressed in a wider frequency range and corresponding RF filters and methods are provided. The resonator has an electrode structure (BB,EF) on a p...  
WO/2019/204393A1
Phononic metamaterials and methods for reducing the group velocities and the thermal conductivity in at least partially crystalline base material are provided, such as for thermoelectric energy conversion. In one implementation, a method...  
WO/2019/197087A1
An improved SAW (SAWR) resonator having an improved power durability and heat resistance and a protection to prevent device failure is provided. The SAW resonator has a carrier substrate (S) and an electrode structure (ES, EF) on a piezo...  
WO/2019/171971A8
A multiplexer (1) is provided with: a common terminal (P0); a first acoustic wave filter (10) that has a first input/output terminal (14) connected to the common terminal (P0), and that allows a first frequency band to pass therethrough;...  
WO/2019/197081A1
A BAW resonator (BAWR) with improved power durability and improved heat resistance is provided. The resonator comprises a layer stack with a piezoelectric material (PM) between a bottom electrode (ELI) and a top electrode (EL2) and a shu...  
WO/2019/197166A1
A package for an electric device is proposed based on a substrate (SU, SU1, SU2) that comprises at least a piezoelectric layer. Device structures are enclosed in a cavity of an integrally formed package layer structure (PK) of a thin fil...  
WO/2019/197086A1
A TF-SAW transducer with improved characteristics is provided. The transducer has a carrier (C), a piezoelectric layer (PM), and interdigitated electrode structures (BB, EFO) to excite a main mode. In the presence of a transversal acoust...  
WO/2019/198594A1
Provided is a surface acoustic wave (SAW) element, wherein piezoelectric layers are layered on a support substrate. An IDT electrode includes a main region and two end regions on the sides thereof. An end region continues from a site at ...  
WO/2019/194140A1
Provided is an elastic wave device in which transverse modes can be effectively suppressed. This elastic wave device is provided with a piezoelectric substrate 2 in which a reciprocal-velocity surface is protuberant, and an IDT electrode...  
WO/2019/193812A1
This high frequency module (1) comprises: a filter (10a) positioned on a first path (L1) linking a shared terminal (11) and an input/output terminal (12a), and which has a first frequency band serve as a passing band; a filter (10b) posi...  
WO/2019/185285A1
An RF filter (ELF) having an increased bandwidth is provided. The filter is an electroacoustic lattice filter having a diagonally-crossed shunt element (DCSE) connected between a first terminal of a second port (Tl, P2) and a second term...  
WO/2019/189634A1
Provided is an elastic wave resonator capable of improving both intra- and extra-pass band characteristics when used for a band-pass filter. The elastic wave resonator 1 is provided with a withdrawal-weighted IDT electrode 3 disposed dir...  
WO/2019/186011A1
The invention relates to a hybrid structure (10) for a surface acoustic wave device, comprising a useful layer (1) of piezoelectric material, joined to a support substrate (2) having a lower coefficient of thermal expansion than the usef...  
WO/2019/188007A1
A multiplexer (1) that comprises a first filter (FLT1) and a second filter (FLT2). The first filter (FLT1) allows signals that are in a first pass band to pass between a common terminal (Pcom) and a first terminal (P1). The second filter...  
WO/2019/188325A1
[Problem] To increase the bond strength between a support substrate comprising a polycrystalline ceramic material or a single crystal material and a piezoelectric single crystal substrate; and to increase the Q value. [Solution] A joint ...  
WO/2019/188381A1
A vibration element (10) according to the present invention is provided with: a base part (50); a first vibration arm part (60a) and a second vibration arm part (60b); a support arm part (70); a first excitation electrode (82a) and a sec...  
WO/2019/187577A1
[Problem] To configure a joined body that joins a piezoelectric material substrate comprising lithium tantalite or the like to a support substrate such that the reduction of voltage resistance of an electrode is suppressed while improvin...  
WO/2019/188078A1
A vibration element (10) according to the present invention is provided with: a base part (50); a first vibration arm part (60a) and a second vibration arm part (60b); a support arm part (70); a first excitation electrode (82a) and a sec...  
WO/2019/188350A1
[Problem] To increase the bond strength between a support substrate comprising a polycrystalline ceramic material or a single crystal material and a piezoelectric single crystal substrate; and to increase the Q value. [Solution] A joint ...  
WO/2019/185248A1
An improved BAW resonator with an increased electroacoustic coupling is provided. The resonator has a monocrystalline piezoelectric material (MCPM) obtained by layer transfer of LN, LT or quartz between a bottom electrode (BE) and a top ...  
WO/2019/188864A1
A filter (10) that comprises a series-arm resonator (s1) and a parallel-arm resonator (p1). The series-arm resonator (s1) and the parallel-arm resonator (p1) each have a substrate (102) and, formed thereon: an IDT electrode (111 and 121)...  
WO/2019/185271A1
A BAW resonator with an improved lateral energy confinement is provided. The resonator has a bottom electrode in a bottom electrode layer, a top electrode in a top electrode layer and a piezoelectric layer between the bottom electrode la...  
WO/2019/185415A1
The invention relates to a surface acoustic wave device using a longitudinally polarized guided wave comprising a composite substrate (7) comprising a piezoelectric layer (11) formed over a base substrate (9), wherein the crystalline ori...  
WO/2019/185363A1
The invention relates to a surface acoustic wave device comprising a base substrate (206, 606), a piezoelectric layer (204, 304, 610) and an electrode layer (208, 608) in between the piezoelectric layer (204, 304, 610) and the base subst...  
WO/2019/185324A1
A bulk acoustic wave resonator device comprises bottom and top electrodes (120, 360). A piezoelectric layer (355) sandwiched therebetween has a thickness in the active resonator area different from the thickness in the surrounding area. ...  
WO/2019/181087A1
[Problem] In bonding a piezoelectric material substrate formed of lithium tantalate, etc. to a supporting substrate via a silicon oxide layer, to prevent separation at the interface between silicon oxide constituting the bonding layer an...  
WO/2019/181977A1
A piezoelectric composition including a composite oxide having a perovskite structure represented by the general formula ABO3, copper, and at least one element selected from the group consisting of chromium, nickel, and zinc, said piezoe...  
WO/2019/176616A1
A through hole formed in an AT cut crystal sheet has an inclined surface (72) from a surrounding part toward a through bore (71) in a center part. The inclined surface (72) has: a first crystal surface S1 that extends in the -Z' directio...  
WO/2019/177028A1
Provided is an elastic wave device capable of suppressing both transverse mode ripples and the response at the upper end of a stopband. This elastic wave device 1 comprises series arm resonators S1-S4 comprising first IDT electrodes and ...  
WO/2019/174096A1
Disclosed by the present invention is a surface acoustic wave filter, belonging to the field of surface acoustic wave filter. The surface acoustic wave filter comprises two pieces of different piezoelectric substrates; a series resonator...  
WO/2019/174097A1
A surface acoustic wave material and a manufacturing method therefor belong to the field of surface acoustic wave materials. The surface acoustic wave material comprises a silicon substrate (13), a silicon-based thin film (12) on the sil...  
WO/2019/174805A1
An RF filter circuit providing the possibility of having a constant gain at different frequencies is provided. The filter circuit has an impedance matching circuit (IMC) between an input port (PIN) and an output port (POUT) and an RF fil...  
WO/2019/174825A1
RF-filter with a ladder type structure with series reactance elements (RSI, RS4) and parallel reactance elements (RP1,...) in which additional shunt lines (SL1, SL4) with a respective notch element are added to provide additional degrees...  
WO/2019/174829A1
A multiplexer circuit with good isolation characteristics and a compensated frequency characteristic at the transmission side is presented. The multiplexer circuit has a reception filter notch circuit (RFNC) active at a frequency within ...  
WO/2019/175317A1
A transducer structure for a surface acoustic wave device, comprising a pair of inter-digitated comb electrodes (302, 304) wherein said pair of inter-digitated comb electrodes (302, 304) comprises neighbouring electrode means (306, 308) ...  
WO/2019/171971A1
A multiplexer (1) is provided with: a common terminal (P0); a first acoustic wave filter (10) that has a first input/output terminal (14) connected to the common terminal (P0), and that allows a first frequency band to pass therethrough;...  
WO/2019/172032A1
A multiplexer according to the present invention is provided with: filters (10, 20) which have passbands different from each other; a common terminal (P0) to which a terminal (11) of the filter (10) and a terminal (21) of the filter (20)...  
WO/2019/170334A1
A layer system especially for forming SAW devices thereon is proposed comprising a monocrystalline sapphire substrate having a first surface and a crystalline piezoelectric layer comprising A1N, deposited onto the first surface, and havi...  
WO/2019/170339A1
It is proposed to couple a shunt line (SHL) to the signal line (SIL) of a filter circuit (BF) with series impedance elements (IES) and parallel impedance elements (IEP) arranged in a ladder type structure and to include a resonant circui...  
WO/2019/170853A1
The present invention relates to a filter correction unit (203a) as well as an RF filter including the correction unit for use in radio frequency transmission lines including a band pass filter (201) having input and output interfaces mo...  
WO/2019/170338A1
An RF filter having improved filter characteristics and in particular a reduced variation of filter properties is provided. The RF filter has a transmission line filter stage (FS1) electrically connected between a first port (PI) and a s...  

Matches 1 - 50 out of 51,107