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Matches 1 - 50 out of 49,081

Document Document Title
WO/2018/013326A1
The invention relates to an RF filter with reduced insertion loss. The filter (F) includes a first bandpass filter (BPF1) having a passband, a circuit unit (SE) having an undesired excitation at a critical frequency (fs) and a reflector ...  
WO/2018/012275A1
According to the present invention, an attenuation amount necessary for a specific frequency band outside a passband is obtained even when frequency characteristics are changed according to a plurality of communication bands. A multiplex...  
WO/2018/011697A1
The present application describes embodiments of a radio-frequency identification (RFID) sensor based on a combination of a surface acoustic wave (SAW) transducer and two-dimensional electron gas (2DEG) or two-dimensional hole gas (2DHG)...  
WO/2018/012279A1
The present invention addresses the problem of providing a substrate for surface acoustic wave elements, which has high thermal conductivity. A substrate for surface acoustic wave elements according to the present invention is characteri...  
WO/2018/012274A1
According to the present invention, an attenuation amount necessary for a specific frequency band outside a passband is obtained even when the frequency characteristics are changed according to a plurality of communication bands. A varia...  
WO/2018/013325A1
In a notch filter in a ladder-type arrangement, spurious modes can be suppressed and linearity can be improved by impedance elements designed as resonators (ZS, ZP) being bridged in parallel by one capacitor each (ZS with CESP, ZP with C...  
WO/2018/012367A1
A reception filter according to the present invention includes: a reception terminal for outputting a reception signal coming from an antenna terminal; a second DMS filter, serving as a longitudinally coupled dual-mode-type elastic-wave ...  
WO/2018/008651A1
The present invention improves the piezoelectric constant of a GaN piezoelectric film. A piezoelectric film which is formed of a gallium nitride crystal having a wurtzite structure, and wherein the gallium nitride crystal contains at lea...  
WO/2018/008252A1
Provided is an acoustic wave device which can be made more compact and with which the effects of longitudinal mode ripple can be suppressed. An acoustic wave device 1 is provided with reflectors 4, 5 which reflect an acoustic wave excite...  
WO/2018/008198A1
In order to avoid the resonance frequency from being affected by the charge on an insulator layer on a holding unit, this resonator is provided with: a vibration unit which has a piezoelectric film and a lower electrode and upper electro...  
WO/2018/006755A1
The invention relates to the field of electronic devices, and specifically, to a full-array die attachment device and method utilized in producing a surface-mount quartz crystal oscillator. The full-array die attachment device comprises ...  
WO/2018/008480A1
In order to avoid the resonance frequency from being affected by the charge on an insulator layer on a holding unit, this resonator is provided with: a vibration unit which has a piezoelectric film and a lower electrode and upper electro...  
WO/2018/003819A1
Provided is an elastic wave device in which a performance deterioration and failure occurrence due to heat generation are suppressed and a performance deterioration due to noise is suppressed. The present invention is provided with a sub...  
WO/2018/003296A1
A quadplexer (1) is provided with a filter (12) and a filter (22) having a higher passband frequency than the filter (12). The filter (12) has a ladder-type filter structure configured from series resonators (121s-125s) arranged on a fir...  
WO/2018/005337A1
A component (B) is specified which comprises a functional structure (FS) on a carrier (TR) that is spanned by a thin-layer covering (DSA) resting on said carrier. A first wiring layer (VE1) is applied onto or in the thin-layer covering a...  
WO/2018/003657A1
Provided is an elastic wave device capable of reducing a spurious component caused by a high-order mode of an elastic wave such as a Rayleigh wave. The elastic wave device 1 is provided with an IDT electrode 3 and an insulating film 6 di...  
WO/2018/003283A1
Provided is an elastic wave device in which, even upon being subjected to an external force or thermal shock, an elastic wave element does not move easily and changes in the frequency characteristics do not occur easily. An elastic wave ...  
WO/2018/003282A1
Provided is an elastic wave device capable of suppressing deterioration in filter characteristics and loss in a main mode as well as suppressing generation of ripples by a high-order transverse mode. The elastic wave device is equipped w...  
WO/2018/002440A1
The present disclosure describes micromechanical resonator, a resonator element for the resonator, and a method for trimming the resonator. The resonator comprises a resonator element having a length, a width, and a thickness, where the ...  
WO/2018/003315A1
[Problem] To improve the hermeticity of an annular sealing and joining material which seals an oscillating portion. [Solution] In a crystal oscillator 10, an oscillating-side first joining pattern 251 formed in an annular fashion on a cr...  
WO/2018/004668A2
Techniques are disclosed for fabricating an integrated circuit including one or more thin-film bulk acoustic resonator (TFBAR, also called FBAR) devices. A given TFBAR device may include a superlattice structure comprising alternating la...  
WO/2018/002439A1
The present disclosure describes a micromechanical resonator comprising a resonator element (40) having a length (l 1 ) and a width (w 1 ) that is perpendicular to the length. The resonator element has a length-to-width aspect ratio in a...  
WO/2018/003297A1
In this quadplexer (1), the filter (12) of a duplexer (10) has a lower passband frequency than the filter (22) of a duplexer (20), a series resonator (121s) closest to a shared terminal (Port1) of the filter (12) is configured from split...  
WO/2018/003538A1
A high-frequency module (1), provided with: a multi-filter unit (20) having filters (30a, 30b, 30c) which have different signal passbands, a terminal (21a, 21b, 21d) serving as an input/output terminal being provided to each of the filte...  
WO/2018/003338A1
Provided is an acoustic wave filter device with which the steepness of the filter characteristic is improved and loss within the passband is reduced, while suppressing transverse mode ripple. This acoustic wave filter device comprises a ...  
WO/2018/005351A1
A component (B) comprising a carrier (TR), on which a functional structure (FS) is covered by a thin-layer covering (DSA) spanning across and resting on the carrier. On a planarization layer arranged above the thin-layer covering (DSA), ...  
WO/2018/004818A1
Embodiments of the invention include a chemical species-sensitive device that includes an input transducer to receive input signals, a base structure that is coupled to the input transducer and positioned in proximity to a cavity of an o...  
WO/2018/003837A1
A multiplexer (1) provided with: an LB band filter (10) disposed on a first path linking a common terminal (Port1) and an individual terminal (Port2); an HB band filter (20) disposed on a second path linking the common terminal (Port1) a...  
WO/2018/004669A1
Techniques are disclosed for co-integrating thin-film bulk acoustic resonator (TFBAR, also called FBAR) devices and III-N semiconductor transistor devices. In accordance with some embodiments, a given TFBAR device may include a superlatt...  
WO/2018/002504A1
The invention relates to a hybrid structure (100) for a surface acoustic wave device, comprising a useful layer (10) of piezoelectric material having a free first surface (1) and a second surface (2) disposed on a support substrate (20) ...  
WO/2018/003378A1
A filter device (2) is provided with: a first filter (20) configured from series resonators and parallel resonators; a first inductor (L1) connected in parallel between a first terminal (11) and the first filter (20); a second inductor (...  
WO/2018/003268A1
Provided is a ladder-type elastic wave filter device (21) comprising parallel resonators (151-154) and series resonators (101-105) configured from an IDT electrode (22) that is formed on a substrate (220) having a piezoelectric layer (22...  
WO/2018/003273A1
A quadplexer (1) is provided with a filter (12) and a filter (22) having a higher passband frequency than the filter (12). The filter (12) comprises series resonators (121s-125s) arranged on a first route and parallel resonators (121p-12...  
WO/2017/219251A1
A trapezoidal broadband piezoelectric filter, consisting of a series of first resonators connected in series, a series of second resonators connected in parallel, an impedance matching device located near an input end or an output end of...  
WO/2017/221887A1
This invention is provided with: an AT-cut crystal piece including a first main surface (12a) and a second main surface (12b) facing each other and having long edges in the x-axis direction and short edges in the z-axis direction of a qu...  
WO/2017/222990A1
Proposed is a layer structure (1100, 1030) comprising a crystalline piezoelectric III-N layer (1110, 1032) epitaxially grown over a metal layer which is epitaxially grown over a rare earth oxide layer on a semiconductor (1102, 1002). The...  
WO/2017/221953A1
This elastic wave device (10) is provided with: a piezoelectric substrate (20); filter electrodes (30(1), 30(2), 30(3)), input terminal electrodes (40(1), 40(2), 40(3)), output terminal electrodes (50(1), 50(2), 50(3)), and ground termin...  
WO/2017/221545A1
An acoustic wave element is provided with: an IDT electrode (21) which has a piezoelectric substrate (100), a first comb-shaped electrode (21a), and a second comb-shaped electrode (21b); and reflectors (32L, 32R). The reflectors (32L, 32...  
WO/2017/221518A1
The present invention provides an elastic wave device which achieves miniaturization and does not tend to cause contact between a cover member and an IDT electrode. An elastic wave device 1, wherein an IDT electrode 9 constituting a long...  
WO/2017/221609A1
Provided are a crystal oscillation piece and a crystal oscillator, wherein fluctuation of excitation frequency can be suppressed. A crystal oscillation piece relating to the present invention is provided with: a substrate that includes a...  
WO/2017/221548A1
This acoustic wave filter device (10) is provided with a transmission-side filter (20), a reception-side filter (30), an antenna terminal (Pant) and a matching circuit (40). The matching circuit (40) is connected between the antenna term...  
WO/2017/217197A1
A multiplexer (1) equipped with multiple filters connected to a common terminal (110), said multiplexer further equipped with: a low-frequency-side filter (11L) that is configured from one or more surface acoustic wave resonators arrange...  
WO/2017/218687A1
There are disclosed radio frequency multiplexers and methods of designing radio frequency multiplexers. A radio frequency multiplexer includes three or more band-pass filters having respective passbands, each band-pass filter comprising ...  
WO/2017/217059A1
This elastic wave device is provided with: a substrate (1) including a piezoelectric film (11); a first IDT electrode (21); a first external electrode (31); and a first penetrating via electrode (41). The first IDT electrode (21) is form...  
WO/2017/218690A1
Bandpass filters and methods of designing bandpass filters are disclosed. A bandpass filter includes a plurality of series acoustic resonators connected in series between an input and an output, and a plurality of\ shunt acoustic resonat...  
WO/2017/218542A1
A BAW resonator with reduced losses is provided. The resonator has a heat isolation element for reducing the heat flux to the resonator's environment.  
WO/2017/213163A1
Provided is a piezoelectric vibration element capable of suppressing an increase in capacitance between excitation electrodes. This piezoelectric vibration element is a piezoelectric vibration element comprising: a piezoelectric piece th...  
WO/2017/212774A1
Provided is an elastic wave device having excellent moisture resistance. An elastic wave device 1 is provided with: a supporting substrate 2, the upper surface of which is provided with a recessed section 2c; a piezoelectric thin film 4 ...  
WO/2017/212787A1
Provided is an elastic wave device wherein migration can be suppressed in an IDT electrode. An elastic wave device 1 is provided with a piezoelectric substrate 2 (piezoelectric body), and an IDT electrode 3, that is directly or indirectl...  
WO/2017/212677A1
The present invention adjusts resonance frequency without impairing the piezoelectric property of a resonator. The present invention comprises: a step for preparing a lower cover; a step for disposing a substrate such that the lower surf...  

Matches 1 - 50 out of 49,081