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7470330 |
A method of removing metal scale from surfaces that includes contacting the surfaces with a first aqueous solution of a chelating agent, allowing the chelating agent to dissolve the metal scale, acidifying the solution to form a precipit...
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7468106 |
The present invention provides a method for removing niobium-rich second-phase-particle (SPP) deposits from zirconium-niobium alloy components. The method comprises washing a freshly pickled and rinsed zirconium-niobium alloy component w...
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7462249 |
A surface treatment process for a metal article includes the following steps. Firstly, a metal article, made of at least one of copper and an alloy thereof, is provided. Secondly, a surface of the metal article is degreased. Thirdly, the...
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7462248 |
A method for cleaning a photomask includes cleaning the photomask with a chemical cleaner, introducing a solution to the photomask, the solution is configured to react with residuals generated from the chemical cleaner to form insoluble ...
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7452475 |
A method for treating a surface of a quartz substrate includes preparing a substrate to provide a working surface having an initial roughness; and then ultrasonically acid-etching the working surface to increase the roughness of the work...
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7452426 |
Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce defects...
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7448397 |
Described are methods, systems, and chemistries for cleaning various components of semiconductor process equipment. A method in accordance with one embodiment cleans articles with differently contaminated interior and exterior surfaces b...
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7435355 |
A liquid-based gravity-driven etching-stop technique for controlling structure dimension is provided, where opposite etching trenches in cooperation with an etching-stop solution are used for controlling the dimension of a microstructure...
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7431860 |
A method for etching a pattern in a material in precise target areas comprising depositing selectively onto the material droplets of a substance for dissolving or reacting chemically with the material. Droplets may be deposited from a pr...
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7431853 |
A method and system for release etching a micro-electrical-mechanical-systems (MEMS) device from a substrate. In one aspect, the invention is a method comprising (a) supporting at least one substrate having a sacrificial oxide and a non-...
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7422639 |
The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel.
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7419614 |
A method of etching and cleaning objects contained in a vessel, includes etching the objects by providing etching solution into the vessel, forcing out the etching solution from the vessel by providing pressurized gas into the vessel; cl...
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7417016 |
The present invention relates to a composition for the removal of so-called “sidewall residues” from metal surfaces, in particular from aluminium or aluminium-containing surfaces, in particular from aluminium or aluminium-containing ...
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7416611 |
In a method and apparatus for cleaning or processing a workpiece, a process gas is brought into contact with the workpiece by diffusion through a heated liquid layer on the workpiece, and by bulk transport achieved by entraining the gas ...
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7415983 |
An acidic detergent composition can be used for removing soils on articles in a dish machine. The acidic detergent composition may be inserted into a dish machine dispenser and a use solution may be formed that contacts a soil on an arti...
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7410902 |
A sulfur-containing detergent composition for cleaning a semiconductor device having an aluminum wire, wherein the sulfur-containing detergent composition is capable of forming a protective film containing a sulfur atom on a surface of a...
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7404863 |
A method of thinning a silicon wafer in a controllable cost-effective manner with minimal chemical consumption. The wafer is placed into a process chamber, after which ozone gas and HF vapor are delivered into the process chamber to reac...
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7402552 |
A non-corrosive cleaning composition for removing residues from a substrate. The composition comprises: (a) water; (b) at least one hydroxylammonium compound; (c) at least one basic compound, preferably selected from the group consisting...
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7402258 |
Methods of removing metal contaminants from a component for a plasma processing apparatus are provided. The method includes cleaning a surface of the component with a cleaning liquid that includes at least one acid selected from oxalic a...
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7402213 |
Described herein is a method of removing an organic-containing material from an exposed surface of a large substrate (at least 0.25 m 2 ). The substrate may comprise an electronic device. The exposed surface is treated with a stripping s...
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7399365 |
The present invention relates to dilute fluoride solutions and methods for cleaning plasma etch residue from semiconductor substrates including such dilute solutions. The compositions and methods according to the invention can advantageo...
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7396417 |
A degreasing method for descaling or removing laser scales from iron-containing metal part surface by treating the iron-containing metal part surfaces that is optionally tainted with laser scales with an aqueous solution containing at le...
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7387964 |
A cleaning solution for removing copper complex residues from the surface of polishing pads and wafer substrates includes an amine pH-adjusting agent, which can be a unidentate or bidentate amine compound or a quartnary ammonium hydroxid...
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7384901 |
A process for cleaning (e.g., desmutting) an aluminum surface, using compositions free of nitric acid and chromic acid and comprising, in one embodiment, an oxidant and at least one mineral acid salt. In another embodiment, the process u...
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7377984 |
Disclosed herein is a method of cleaning a photomask, which prevents haze from being generated on a surface of the photomask during a photolithography process. The photomask is heat treated to remove residual ions on a surface thereof an...
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7368019 |
A technique is provided to precludes elution of the nickel by infallibly removing the nickel adhering to the inner surface of plumbing hardware, realize a treatment for efficient (treating temperature, treating duration, etc.) preclusion...
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7367343 |
The invention includes methods of cleaning a surface of a cobalt-containing material, methods of forming an opening to a cobalt-containing material, semiconductor processing methods of forming an integrated circuit comprising a copper-co...
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7364625 |
Described are methods of rinsing and processing devices such as semiconductor wafers wherein the device is rinsed with using a surface tension reducing agent; the method may include a subsequent drying step which preferably incorporates ...
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7351391 |
A system and method of economically converting a spent first pickling acid solution that contains hydrochloric acid, water and ferrous chloride into a suitable second pickling solution. Sulfuric acid is added to the first pickling acid s...
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7347951 |
A method of manufacturing an electronic device comprises forming a wiring material layer made of aluminum or an aluminum alloy on the surface of an insulating film on a substrate, patterning the wiring material layer by a reactive ion et...
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7344602 |
An improved scale conditioning composition and method is disclosed that results in improved dissolution and disruption of tube scale, hardened sludge and other deposits composed primarily of highly densified magnetite such as those found...
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7335268 |
An inorganic compound for removing polymers after a semiconductor etching process and related methods and apparatus are disclosed. An example compound includes DIW, H 2 SO 4 , H 2 O 2 and HF. An example method for removing polymers gene...
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7318870 |
A cleaning method for a semiconductor substrate including placing the semiconductor substrate into a cleaning chamber and injecting ozone gas (O 3 ) into the cleaning chamber. This process operates to cleanse the semiconductor substrate ...
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7314688 |
A reflection mask blank and a method of producing a reflection mask blank by forming, on a substrate, at least a multilayer reflection film for reflecting exposure light and an absorber layer formed on the multilayer reflection film for ...
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7314529 |
A soft spray nozzle discharging a cleaning mist is vertically directed and fixed to an arm. A rinse nozzle discharging rinsing deionized water for suppressing obstruction is vertically fixed to the arm at a prescribed distance from the s...
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7309683 |
A cleaning composition comprises an alkali solution, pure water, and a surfactant represented by the following chemical formula: R1-OSO 3 —HA + wherein R1 is one selected from a group consisting of a butyl group, an isobutyl group, an...
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7306681 |
A cleaning method and cleaning recipes are disclosed. The present invention relates to a method for cleaning a semiconductor substrate and cleaning recipes. The present invention utilizes a first cleaning solution including diluted hydro...
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7300527 |
A method for activating the surface of a base material and an apparatus thereof, which is suited to be utilized for pretreatment in electrochemical treatment such as, for example, electroplating or the like, in which the surface of a bas...
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7285492 |
A substrate processing method can securely form a metal film by electroless plating on an exposed surface of a base metal, such as interconnects, with increased throughput and without the formation of voids in the base metal. The substra...
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7282099 |
Method for processing an article by contacting the article with a dense fluid. The article is introduced into a sealable processing chamber and the processing chamber is sealed. A dense fluid is prepared by introducing a subcritical flui...
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7276449 |
A method for moving resist stripper across the surface of a semiconductor substrate includes applying a wet chemical resist stripper, such as an organic or oxidizing wet chemical resist stripper, to at least a portion of a photomask posi...
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7270597 |
In one embodiment, a method for cleaning a chemical mechanical polishing (CMP) pad is provided. The CMP pad surface has a residue thereon. Chemicals are applied onto the surface of the CMP pad and the pad surface is rinsed so as to subst...
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7270130 |
The present invention provides a method for cleaning semiconductor devices through heterogeneous nucleation of cavitation bubbles. Heterogeneous nucleation is performed by applying sonic energy to a cleaning solution and a phase material...
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7267726 |
A method for cleaning a semiconductor device has the steps of securing a wafer ( 16 ) with a modified chuck ( 11 ) and applying a cleaning solution ( 18 ) to the backside ( 20 ) of the wafer ( 16 ). The cleaning solution ( 18 ) is formul...
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7261780 |
An object of the present invention is to provide a ceramic susceptor for considerably reducing the count number of metal atoms on the surface of a semiconductor after the semiconductor is treated, specifically to 1×10 10 atoms/cm 2 or...
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7255749 |
In a cleaning treatment of a substrate using an aqueous solution of ammonium fluoride or a mixture of an aqueous solution of ammonium fluoride and hydrofluoric acid as a cleaning liquid, the cleaning liquid is replenished by at least one...
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7250114 |
Methods of surface finishing a component useful for a plasma processing apparatus are provided. The component includes at least one plasma-exposed quartz glass surface. The method includes mechanically polishing, chemically etching and c...
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7250085 |
Method of wet cleaning a surface of at least one material chosen from silicon, silicon-germanium alloys, A(III)/B(V)-type semiconductors and epitaxially grown crystalline materials, such as germanium, in which method the following succes...
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7247579 |
Silicon electrode assembly decontamination cleaning methods and solutions, which control or eliminate possible chemical attacks of electrode assembly bonding materials, comprise ammonium fluoride, hydrogen peroxide, acetic acid, optional...
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7247208 |
Ammonia-free, HF-free cleaning compositions for cleaning photoresist and plasma ash residues from microelectronic substrates, and particularly to such cleaning compositions useful with and having improved compatibility with microelectron...
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