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7452426 |
Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce defects...
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7442319 |
The use of an ammonium hydroxide spike to a hot tetra methyl ammonium hydroxide (TMAH) solution to form an insitu poly oxide decapping step in a polysilicon (poly) etch process, results in a single step rapid poly etch process having uni...
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7422639 |
The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel.
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7419614 |
A method of etching and cleaning objects contained in a vessel, includes etching the objects by providing etching solution into the vessel, forcing out the etching solution from the vessel by providing pressurized gas into the vessel; cl...
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7416612 |
A process for removing paint from a plastic substrate that typically includes immersing and optionally agitating the painted plastic substrate in a first chemical fluid, removing the substrate from the first chemical fluid, typically imm...
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7416611 |
In a method and apparatus for cleaning or processing a workpiece, a process gas is brought into contact with the workpiece by diffusion through a heated liquid layer on the workpiece, and by bulk transport achieved by entraining the gas ...
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7413613 |
A method for activating surface of electron emission source of a field emission display. After a cathode structure is fabricated and sintered with high temperature, the surface of electron emission source is activated by employing a spra...
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7412979 |
The present invention relates to an apparatus and method for removing a coating material from a predetermined first portion of a container, while retaining the coating on a second portion of the container, or alternatively applying a coa...
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7410545 |
A substrate immersed in pure water held inside a processing bath disposed to a cleaning unit 1 and accordingly washed, as it bears an aqueous film on its surface, is transported by a substrate transportation mechanism 3 to a spin-pro...
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7410543 |
Resists can be removed while metal contamination of wafers, etc. and generation of particles, and growth of oxide films are suppressed. A substrate processing method comprises feeding a processing gas, such as ozone gas, into a processin...
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7405164 |
In an apparatus and method for removing a photoresist structure from a substrate, a chamber for receiving the substrate includes a showerhead for uniformly distributing a mixture of water vapor and ozone gas onto the substrate. The showe...
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7404863 |
A method of thinning a silicon wafer in a controllable cost-effective manner with minimal chemical consumption. The wafer is placed into a process chamber, after which ozone gas and HF vapor are delivered into the process chamber to reac...
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7402213 |
Described herein is a method of removing an organic-containing material from an exposed surface of a large substrate (at least 0.25 m 2 ). The substrate may comprise an electronic device. The exposed surface is treated with a stripping s...
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7387689 |
Methods for processing substrate through a head that is configured to be placed in close non-contact proximity to a surface of a substrate are provided. One method includes applying a first fluid onto the surface of the substrate from co...
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7377984 |
Disclosed herein is a method of cleaning a photomask, which prevents haze from being generated on a surface of the photomask during a photolithography process. The photomask is heat treated to remove residual ions on a surface thereof an...
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7377982 |
The present invention discloses a method for the removal of a number of molecular contaminants from surfaces within a device. A purge gas containing oxygen and/or water is introduced into the interior of the device, contacting at least a...
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7368020 |
A method of transporting a reticle is disclosed. The reticle is placed in a reticle carrier that has an ionizer. Moreover, the reticle may be attached with a pellicle. The pellicle consists of a pellicle frame and a pellicle film stretch...
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7364625 |
Described are methods of rinsing and processing devices such as semiconductor wafers wherein the device is rinsed with using a surface tension reducing agent; the method may include a subsequent drying step which preferably incorporates ...
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7341067 |
A method of cleaning a heat transfer element within a boiler furnace is provided. The method includes the steps of allowing a furnace to operate and deposit ash on a heat transfer element, determining an efficiency rate for at least one ...
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7332042 |
Process for the treatment of cork or a cork-based material particularly with a view towards extracting contaminating organic compounds, in which said cork or said cork-based material is put into contact with a dense fluid under pressure ...
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7331354 |
In process for cleaning tray columns which are used for the purposes of rectifiying liquids comprising (meth)acrylic compounds, a basic liquid is conveyed downward through the tray column and a gas is passed through the column in counter...
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7329321 |
A method for removing post-processing residues in a single wafer cleaning system is provided. The method initiates with providing a first heated fluid to a proximity head disposed over a substrate. Then, a meniscus of the first fluid is ...
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7318870 |
A cleaning method for a semiconductor substrate including placing the semiconductor substrate into a cleaning chamber and injecting ozone gas (O 3 ) into the cleaning chamber. This process operates to cleanse the semiconductor substrate ...
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7297212 |
The present invention discloses a method for the removal of a number of molecular contaminants from surfaces within a device. A purge gas containing oxygen and/or water is introduced into the interior of the device, contacting at least a...
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7288156 |
The invention provides a water supplying apparatus and method thereof which has a high capacity of peeling and removing a disused material such as a resist film and the like, and can efficiently use water vapor. A water supplying apparat...
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7287534 |
A process for cleaning apparatus in which (meth)acrylic acid-containing organic solvents have been treated and/or generated and contain fouling and/or polymer and residues of organic solvent, in which the apparatus contents are subjected...
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7270717 |
Disclosed are compositions and methods for cleaning contaminated articles based on the provision of a zeotropic composition comprising (a) at least one flammable solvent having a boiling point at a first pressure; (b) at least one first ...
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7264680 |
A method for cleaning a semiconductor workpiece having a metal layer in a processing chamber includes the steps of introducing a liquid solution including dissolved carbon dioxide onto the workpiece, and introducing ozone into the proces...
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7264679 |
In a method of cleaning a surface of a substrate processing chamber component to remove process deposits, the component surface is cooled to a temperature below about −40° C. to fracture the process deposits on the surface. The surfac...
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7258750 |
A process for removing paint from a plastic substrate that typically includes immersing and optionally agitating the painted plastic substrate in a first chemical fluid, removing the substrate from the first chemical fluid, typically imm...
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7247208 |
Ammonia-free, HF-free cleaning compositions for cleaning photoresist and plasma ash residues from microelectronic substrates, and particularly to such cleaning compositions useful with and having improved compatibility with microelectron...
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7244315 |
Improved methods of rinsing and drying microelectronic devices by way of an immersion processing apparatus are provided for effectively cleaning microelectronic devices. Methods and arrangements control the separation of one or more micr...
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7229506 |
A process for pickling martensitic or ferritic stainless steel, preferably in the form of wires, tubes or rods, wherein the stainless steel is placed in contact with a pickling solution which has a temperature in the range 15 to 29° C. ...
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7208049 |
Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce defects...
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7204889 |
The present invention relates to a method of cleaning and drying a semiconductor structure in a modified conventional gas etch/rinse or dryer vessel.
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7201807 |
Disclosed are a method for cleaning a deposition chamber by removing attached metal oxides, and a deposition apparatus for performing in situ cleaning. A first gas and a second gas are provided into the deposition chamber. The first gas ...
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7195676 |
Method for removing flux residue and defluxing residue from an article using a dense processing fluid and a dense rinse fluid is disclosed herein. In one embodiment, there is provided a method comprising: introducing the article comprisi...
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7192912 |
A solvent blend effective to remove grease and oil includes a hydro treated light petroleum distillate in combination with a glycol ether and an ester solvent. Each of the components has a vapor pressure of less than 0.1 mm Hg at 20° C....
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7192490 |
Process for the treatment of cork or a cork-based material particularly with a view towards extracting contaminating organic compounds, in which said cork or said cork-based material is put into contact with a dense fluid under pressure ...
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7189291 |
The present invention discloses a method for the removal of a number of molecular contaminants from surfaces within a device. A purge gas containing oxygen and/or water is introduced into the interior of the device, contacting at least a...
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7186301 |
Disclosed herein is a device and a method of cleaning a photomask, which prevents haze from being generated on a surface of the photomask during a photolithography process. The photomask is heat treated to remove residual ions on a surfa...
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7163588 |
Contaminants such as photoresist are quickly removed from a wafer having metal features, using water, ozone and a base such as ammonium hydroxide. Processing is performed at room temperature to avoid metal corrosion. Ozone is delivered i...
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7159597 |
A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after depositing a layer of material over a substrate disposed in the chamber. In one embodiment the process compris...
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7153372 |
Gas is introduced prior to a flooding process of a vacuum chamber of a vacuum installation, into coverings of elements, which coverings can be ventilated such that solid bodies are blown out of said coverings thereby preventing a penetra...
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7153371 |
An extraction cleaning machine comprising dispensing and recovery systems, the dispensing system including a system for generating heat with an exothermic reaction upon activation for heating the cleaning solution prior to dispensing of ...
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7153370 |
The present application discloses a method of cleaning a semiconductor wafer by mounting a wafer to a chuck, positioning a gas guard, defining therein a chamber having an open bottom, immediately above the layer of water, spraying de-ion...
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7150796 |
In a method of affecting cleaning or chamber process control to remove residues of fluorinated discharges from internal PECVD chamber hardware during manufacture of a semiconductor or integrated circuit, the improvement of removing the f...
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7141124 |
The present invention relates to process and methods, as well as compositions and systems for use in laundering smoke-damaged garments. In particular, the present invention utilizes ozonated water to treat the smoke-damaged garments.
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7141123 |
A cleanling apparatus for removing contaminants from the surface of a substrate includes two parts: one which produces an aerosol including frozen particles and directs the aerosol onto the surface of the substrate to remove contaminants...
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7138065 |
The invention relates to a method for removing an area of a layer of a component consisting of metal or a metal compound. According to prior art, corrosion products of a component are removed in a first step by applying a molten mass or ...
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