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7474010 |
Apparatus and methods for performing quantum computations are disclosed. Such apparatus and methods may include identifying a first quantum state of a lattice having a system of quasi-particles disposed thereon, moving the quasi-particle...
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7453162 |
Apparatus and methods for performing quantum computations are disclosed. Such apparatus and methods may include identifying a first quantum state of a lattice having a system of quasi-particles disposed thereon, moving the quasi-particle...
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7423284 |
A light-emitting device includes a GaN substrate; a n-type Al x Ga 1-x N layer on a first main surface side of the GaN substrate; a p-type Al x Ga 1-x N layer positioned further away from the GaN substrate compared to the n-type Al x Ga ...
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7276725 |
The present invention relates to a bit line barrier metal layer for a semiconductor device and a process for preparing the same, the process comprising: forming bit line contact on an insulation layer vapor-deposited on an upper part of ...
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7176483 |
An electrical junction that includes a semiconductor (e.g., C, Ge, or an Si-based semiconductor), a conductor, and an interface layer disposed therebetween. The interface layer is sufficiently thick to depin a Fermi level of the semicond...
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7122735 |
A method and apparatus that converts energy provided by a chemical reaction into energy for charging a quantum well device. The disclosed apparatus comprises a catalyst layer that catalyzes a chemical reaction and captures hot electrons ...
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7002174 |
A structure comprising a tank circuit inductively coupled to a flux qubit or a phase qubit. In some embodiments, a low temperature preamplifier is in electrical communication with the tank circuit. The tank circuit comprises an effective...
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6999806 |
A Josephson junction having a barrier layer sandwiched by two superconductors wherein the superconductors include one or more elements selected from the group of Y, La, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb and Lu, one or more elements sele...
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6995390 |
A switching device has an S (Superconductor)-N (Normal Metal)-S superlattice to control the stream of electrons without any dielectric materials. Each layer of said Superconductor has own terminal. The superlattice spacing is selected ba...
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6989569 |
A MOS transistor with a controlled threshold voltage includes a SOI which includes a substrate composed of a semi-conducting material, a single crystal layer composed of a semi-conducting material and an insulating layer interposed betwe...
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6974965 |
A method for fabricating chalcogenide materials on substrates, which reduces and/or eliminates agglomeration of materials on the chalcogenide materials; and system and devices for performing the method, semiconductor devices so produced,...
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6849868 |
The present invention is related to methods and apparatus to produce a memory cell or resistance variable material with improved data retention characteristics and higher switching speeds. In a memory cell according to an embodiment of t...
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6835949 |
An assembly includes a device for receiving at least one input to produce an output. An antenna supports the device to transfer the input to the device and further to transfer the output from the device such that the antenna supports a s...
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6818918 |
A Josephson junction includes first and second electrodes, each of which is formed of superconductive material. The first electrode has a first electrode face. A barrier of the junction extends from the first electrode to the second elec...
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6734455 |
A method for fabricating chalcogenide materials on substrates, which reduces and/or eliminates agglomeration of materials on the chalcogenide materials; and system and devices for performing the method, semiconductor devices so produced,...
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6734454 |
A Josephson junction has inherent resistance which effectively shunts the junction and thereby obviates a separate shunt resistor and thus reduces surface area in an integrated circuit including a plurality of Josephson junctions. The Jo...
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6674090 |
An active semiconductor device is made using planar lateral oxidation to define a core region that is surrounded by regions of buried oxidized semiconductor material in. The buried oxidized semiconductor material provides optical wavegui...
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6642608 |
A superconductor integrated circuit ( 10 ) includes a silicon substrate ( 12 ) a niobium ground layer ( 14 ), an anodized niobium first ground insulator layer ( 16 ), a second ground insulator layer ( 22 ), a molybdenum nitrogen (MoN x )...
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6627915 |
A superconducting qubit is presented. The qubit is a shaped long Josephson junction with a magnetic fluxon such that, in the presence of an externally applied magnetic field, a fluxon potential energy function indicating a plurality of p...
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6580102 |
Quantum computing systems and methods that use opposite magnetic moment states read the state of a qubit by applying current through the qubit and measuring a Hall effect voltage across the width of the current. For reading, the qubit is...
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6541789 |
In a method of manufacturing a Josephson junction, a first superconductive layer is formed on a substrate. An insulating film is formed on the first superconductive layer. The insulating film is etched to have an inclination portion. The...
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6521961 |
An enhancement mode semiconductor device has a barrier layer disposed between the gate electrode of the device and the semiconductor substrate underlying the gate electrode. The barrier layer increases the Schottky barrier height of the ...
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6426514 |
The present invention is for an improved modulator and detection device that use reversed biased diodes containing not intentionally doped (NID) optically active regions sandwiched between conductive layers of p-doped and n-doped semicon...
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RE37587 |
A SQUID includes a substrate and a superconducting current path of a patterned oxide superconductor material thin film formed on a surface of the substrate. A c-axis of an oxide crystal of the oxide superconductor material thin film is o...
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6344659 |
The present invention relates on an interferometer arrangement comprising a source electrode and a drain electrode, a base electrode to which the source electrode and the drain electrode are connected through tunnel barriers, the base el...
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6188919 |
A SNS Josephson junction (10) is provided for use in a superconducting integrated circuit. The SNS junction (10) includes a first high temperature superconducting (HTS) layer (14) deposited and patterned on a substrate (18), such that th...
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6157044 |
A tunnel junction type Josephson device includes a pair of superconductor layers formed of a compound oxide superconductor material and an insulator layer formed between the pair of superconductor layers. The insulator layer is formed of...
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6087687 |
A semiconductor device is provided, which is readily and correctly designed even when the semiconductor device is further miniaturized. This device includes a semiconductor substrate, a source region and a drain region formed to be apart...
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6051846 |
A method for the fabrication of active semiconductor and high-temperature superconducting device of the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insulating su...
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6011981 |
An oxide superconducting multilayered thin film structure having a laminated layer structure of oxide superconductor thin film layers and non-superconductor thin film layers constituted by a combination of material groups for making stra...
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5965900 |
The invention relates to a detector cell comprising tunnel-effect superconductive devices organized in a two-dimensional array and placed on a common substrate, each superconductive device comprising a tunnel-effect superconductive junct...
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5910662 |
A semiconductor substrate comprising a single crystal substrate base such a silicon and a superconducting thin film layer deposited on said substrate base and composed of compound oxide such as Ln 1 Ba 2 Cu 3 O 7 -δ. (Ln is lanthanide).
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5892243 |
A high temperature superconductor junction and a method of forming the junction are disclosed. The junction 40 comprises a first high-T c , superconductive layer (first base electrode layer) 46 on a substrate 42 and a dielectric layer 48...
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5885937 |
This invention provides a superconducting tunnel junction element showing satisfactory Josephson effect. The element includes a Bi-based layered compound such as Bi 2 Sr 2 (Ca 0 .6 Y 0 .4)Cu 2 O 8 , Bi 2 Sr 2 Cu 2 O 6 and Bi 2 Sr...
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5831279 |
A device with weak links (Josephson junctions) in a superconducting film has two single crystals connected through an interconnecting arrangement that may have one or more sublayers. At least two grain boundaries or at least one barrier ...
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5821557 |
A Josephson junction includes a substrate, a first superconducting layer, a second superconducting layer transversely overlaid on the first layer with an insulating layer interposed therebetween, the insulating layer is an oxide or a nit...
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5804835 |
This is an invention of a superconductive device that is equipped with a first superconductive electrode, a second superconductive electrode and a junction that is made of a superconductive material that connects these superconductive el...
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5793056 |
A technique for defining the active area of a high-T c superconductor Josephson junction uses an epitaxial slotted insulator patterned over the edge of the superconductor thin film-insulator bilayer. The superconductor/normal-metal/supe...
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5757243 |
An effective high frequency oscillator is made of a plurality of Josephson devices. A high frequency converter as a high frequency circuit is made of the high frequency oscillator, nonlinear superconductor devices, and transmission line....
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5753935 |
In a radiation detection device using superconducting tunnel junctions, the increase in electric capacitance and the decrease in electric resistance due to the increase in junction area for improvement of the detection efficiency are lar...
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5736488 |
This invention relates to multilayered superconductive composites, particularly to composites based on thallium-containing superconducting oxides, and their process of manufacture.
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5696392 |
A conductor suitable for use in oxide-based electronic devices and circuits is disclosed. Metallic oxides having the general composition AMO 3 , where A is a rare or alkaline earth or an alloy of rare or alkaline earth elements, and M is...
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5665980 |
A method of fabricating a superconducting quantum interference device (DC-SQUID) constructed from short weak links with untrafine wires. The method comprises the following steps: successive forming a niobium nitride film and a silicon ni...
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5635730 |
A superconducting oxide thin film device is composed of a LaAlO 3 substrate and a YBCO thin film with a BaCeO 3 buffer layer disposed between the two. The adhesion between the film and the substrate is increased by the presence of the ...
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5629267 |
A superconducting element is disclosed which comprises a lower superconducting layer, an upper superconducting layer, and an intermediate layer interposed between the lower and upper superconducting layers. The lower and upper supercondu...
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5627139 |
A HTSC Josephson device wherein the barrier layer is a cubic, conductive material.
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5600172 |
A surface of a thin film superconductor element is coated with a layer containing pre-selected dye, or multiple dyes, alone or in combination with intermediate reflective coatings (best mode), which, when maintained near T c , upon expos...
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5596206 |
A new type of superconducting device is disclosed. The device embodies a superconducting ceramic film as an active part. A control electrode is provided on the superconducting film in which a passing current is controlled by applying a v...
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5593950 |
A lattice matching device includes a substrate having thereon monocrystal regions having different lattice mismatches with respect to a LnBa 2 Cu 3 O x superconductor. A superconducting thin film is formed on the substrate, which film...
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5589696 |
A tunnel transistor comprises a semiconductor film (27) between a gate isolating film (17) and parts of first (13) and second (15) semiconductor layers which are formed in a substrate (11) to serve as source and drain regions with a spac...
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