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7323711 |
A high-temperature superconductive device is disclosed, including a ramp-edge junction. The ramp-edge junction includes a first electrode layer ( 5 ) that defines the size of the ramp-edge junction and a second electrode layer ( 6 ). The...
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7307275 |
The present invention involves a quantum computing structure, comprising: one or more logical qubits, which is encoded into a plurality of superconducting qubits; and each of the logical qubits comprises at least one operating qubit and ...
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7250648 |
Ferroelectric rare-earth manganese-titanium oxides and methods of their manufacture. The ferroelectric materials can provide nonvolatile data storage in rapid access memory devices.
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6995390 |
A switching device has an S (Superconductor)-N (Normal Metal)-S superlattice to control the stream of electrons without any dielectric materials. Each layer of said Superconductor has own terminal. The superlattice spacing is selected ba...
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6984846 |
A qubit (quantum bit) circuit includes a superconducting main loop that is electrically-completed by a serially-interconnected superconducting subloop. The subloop includes two Josephson junctions. A first coil provides a first flux that...
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6979836 |
A superconducting structure that can operate, for example, as a qubit or a superconducting switch is presented. The structure includes a loop formed from two parts. A first part includes two superconducting materials separated by a junct...
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6853009 |
A barrier layer made of Al x Ga 1-x N (0<x≦0.18) is formed in a light-emitting semiconductor device using gallium nitride compound having a multi quantum-well (MQW) structure. By controlling a composition ratio x of aluminum (Al) or...
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6844566 |
The present invention provides a single-electron transistor device ( 100 ). The device ( 100 ) comprises a source ( 105 ) and drain ( 100 ) located over a substrate ( 115 ) and a quantum island ( 120 ) situated between the source and dra...
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6822255 |
A finger SQUID qubit device and method for performing quantum computation with said device is disclosed. A finger SQUID qubit device includes a superconducting loop and one or more superconducting fingers, wherein the fingers extend to t...
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6812484 |
A finger SQUID qubit device and method for performing quantum computation with said device is disclosed. A finger SQUID qubit device includes a superconducting loop and one or more superconducting fingers, wherein the fingers extend to t...
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6803599 |
A control system for an array of qubits is disclosed. The control system according to the present invention provides currents and voltages to qubits in the array of qubits in order to perform functions on the qubit. The functions that th...
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6791109 |
A finger SQUID qubit device and method for performing quantum computation with said device is disclosed. A finger SQUID qubit device includes a superconducting loop and one or more superconducting fingers, wherein the fingers extend to t...
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6790675 |
A method of fabricating a Josephson device includes the steps of forming a first superconducting layer and forming a second superconducting layer to form a Josephson junction therebetween, wherein the step of forming the second supercond...
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6784451 |
In one embodiment, a two-junction phase qubit includes a superconducting loop and two Josephson junctions separated by a mesoscopic island on one side and a bulk loop on another side. The material forming the superconducting loop is a su...
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6777808 |
The self inductance associated with a capacitance A 52 in a superconductor integrated circuit (FIG. 1 ) is reduced by adding a layer of superconductor metal (A 54 ) overlying the capacitor, effectively producing a negative inductance t...
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6728131 |
A method for inserting fluxons into an annular Josephson junction is disclosed. Fluxon injection according to the present invention is based on local current injection into one of the superconducting electrodes of the junction. By choosi...
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6670630 |
A superconducting structure that includes a mesoscopic phase device and a mesoscopic charge device. The superconducting structure further includes a mechanism for coupling the mesoscopic phase device and the mesoscopic charge device so t...
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6649929 |
A method and structure for a d-wave qubit structure includes a qubit disk formed at a multi-crystal junction (or qubit ring) and a superconducting screening structure surrounding the qubit. The structure may also include a superconductin...
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6627916 |
A solid state dc-SQUID includes a superconducting loop containing a plurality of Josephson junctions, wherein an intrinsic phase shift is accumulated through the loop. In an embodiment of the invention, the current-phase response of the ...
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6614047 |
A finger SQUID qubit device and method for performing quantum computation with said device is disclosed. A finger SQUID qubit device includes a superconducting loop and one or more superconducting fingers, wherein the fingers extend to t...
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6605822 |
A method for performing a quantum computing entanglement operation between a phase qubit and a charge qubit. A coherent connection between the phase qubit and the charge qubit is provided. The coherent connection allows the quantum state...
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6580102 |
Quantum computing systems and methods that use opposite magnetic moment states read the state of a qubit by applying current through the qubit and measuring a Hall effect voltage across the width of the current. For reading, the qubit is...
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6562693 |
There is provided is a semiconductor laser device capable of simplifying fabricating processes with a simple construction and easily mounting two semiconductor laser elements and a monitoring PD on a compact package and a wire bonding me...
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6495854 |
A method and structure for a d-wave qubit structure includes a qubit disk formed at a multi-crystal junction (or qubit ring) and a superconducting screening structure surrounding the qubit. The structure may also include a superconductin...
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6479863 |
A tunneling charge injector includes a conducting injector electrode, a grid insulator disposed adjacent the conducting injector electrode, a grid electrode disposed adjacent the grid insulator, a retention insulator disposed adjacent th...
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6365912 |
A superconductive tunnel junction device in which quasiparticles in a superconductive region (S 1 ), relax into a normal metal trap (N 1 ) releasing their potential energy in electron-electron interactions to increase the number of excit...
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6344659 |
The present invention relates on an interferometer arrangement comprising a source electrode and a drain electrode, a base electrode to which the source electrode and the drain electrode are connected through tunnel barriers, the base el...
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6160266 |
This invention provides a superconducting device with good characteristics that can be reproduced at an arbitrary place on a substrate and a method of manufacturing the same. A convex region (a processed, linearly shaped platinum thin fi...
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6147360 |
This invention provides a superconducting device with good characteristics that can be reproduced at an arbitrary place on a substrate and a method of manufacturing the same. A convex region (a processed, linearly-shaped platinum thin fi...
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6111268 |
The invention relates to an inverted JOFET with an at least bicrystalline electrically conductive substrate-layer bearing an insulating element and a superconductive element with a Josephson-junction. The substrate-layer is connected to ...
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5965900 |
The invention relates to a detector cell comprising tunnel-effect superconductive devices organized in a two-dimensional array and placed on a common substrate, each superconductive device comprising a tunnel-effect superconductive junct...
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5955743 |
The invention relates to a superconductive tunnel element comprising superconductors, barriers and insulators, which tunnel element has the following layer structure: superconductor (S1), insulator (I), superconductor (S2), barrier (B), ...
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5942765 |
In the random access memory utilizing an oxide high-temperature superconductor, a first high-temperature superconductor layer 1, a non-superconductor layer 2, a second high-temperature superconductor layer 3 and a non-superconductor laye...
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5872731 |
A multi-state Josephson memory in a superconductor integrated circuit includes a plurality of superconductive quantum interference device (SQUID) memory cells 2 each having a SQUID 4 characterized by a SQUID loop inductance L and a junct...
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5861361 |
A FET type superconducting device comprises a thin superconducting channel, a superconducting source region and a superconducting drain region formed of an oxide superconductor over a principal surface of the substrate, and a gate electr...
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5854492 |
A nondestructive inspection apparatus having a SQUID is made with compact configuration and is capable of detecting a metallic or non-metallic metal for defects, corrosion, and the like, by forming the SQUID and a magnetic field applying...
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5831278 |
A three-terminal device constructed from a Josephson junction with one or more asymmetric control lines is disclosed. The device is constructed with high temperature superconducting materials. The junction can be a bicrystal, SNS (Superc...
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5821557 |
A Josephson junction includes a substrate, a first superconducting layer, a second superconducting layer transversely overlaid on the first layer with an insulating layer interposed therebetween, the insulating layer is an oxide or a nit...
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5804835 |
This is an invention of a superconductive device that is equipped with a first superconductive electrode, a second superconductive electrode and a junction that is made of a superconductive material that connects these superconductive el...
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5773843 |
A metal electrode disposed on a surface of an oxide superconductor and forming electric contact with the oxide superconductor wherein at least a portion of the metal electrode is in contact with a side surface of the oxide superconductor...
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5757243 |
An effective high frequency oscillator is made of a plurality of Josephson devices. A high frequency converter as a high frequency circuit is made of the high frequency oscillator, nonlinear superconductor devices, and transmission line....
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5717222 |
A superconducting device includes a substrate, a projecting insulating region formed in a principal surface of the substrate, and a first thin film portion of an oxide superconductor formed on the projecting insulating region. Second and...
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5710437 |
A radiation detecting device including a superconducting tunnel junction having a three-layer structure formed by depositing a lower electrode, a tunnel barrier layer, and an upper electrode in sequence. The upper electrode, the tunnel b...
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5654259 |
The substance has a composition of a general chemical formula of Bi 2 -(Sr 2 Ca 1 ) 1 -x (La 2 Y 1 ) x -Cu y -O z , where 0.4≤x≤1, y=2 and z=9-10.5, wherein the substance is an insulator or a semiconductor in the dark, and has...
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5621223 |
A superconducting device includes first and second oxide superconducting regions of a relatively thick thickness, formed directly on a principal surface of a substrate to be separate from each other, and a third oxide superconducting reg...
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5610857 |
A memory element for multiple bit storage uses a plurality of Josephson junction devices coupled in parallel between a ground plane and a superconductive line. A gate current is directly coupled to the superconductive line at a midpoint,...
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5594257 |
A superconducting device comprises a substrate having a principal surface, a non-superconducting oxide layer having a similar crystal structure to that of an oxide superconductor formed on the principal surface, which can compensates the...
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5550389 |
A superconducting device low in power dissipation and high in operating speed is fabricated by use of a combination of a superconductor material and a semiconductor material. The superconducting device having a low power dissipation and ...
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5548130 |
A DC SQUID has a first washer coil for forming a superconducting ring, Josephson junctions and a dampening resistor coupled to both ends of the first washer coil, and a shunting resistor connected in parallel to the Josephson junctions. ...
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5539215 |
A superconducting device comprising a substrate having a principal surface, a non-superconducting oxide layer having a similar crystal structure to that of the oxide superconductor, a first and a second superconducting regions formed of ...
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