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7449713 |
A semiconductor memory device includes a semiconductor substrate, a semiconductor layer, a source/drain layer, first and second insulating films, and first and second gate electrodes. The semiconductor layer of one conductivity type is f...
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7405421 |
The present invention provides an optical device integrating an active device with a passive device without any butt joint structure between two devices. The optical integrated device of the invention includes a GaAs substrate, first and...
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7259406 |
A semiconductor optical element having a includes an n-type GaAs buffer layer, an n-type AlGaInP cladding layer, a first InGaAsP (including zero As content)guide layer without added dopant impurities, an InGaAsP (including zero In conten...
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7250648 |
Ferroelectric rare-earth manganese-titanium oxides and methods of their manufacture. The ferroelectric materials can provide nonvolatile data storage in rapid access memory devices.
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7167387 |
The present invention lowers a drive voltage of a RRAM, which is a promising low power consumption, high-speed memory and suppresses variations in the width of an electric pulse for realizing a same resistance change. The present inventi...
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7157731 |
In a logic area, impurities are doped into the gate electrode and the source/drain diffusion regions of a MIS transistor. Thereafter in a memory cell area, word lines are patterned, source/drain regions are formed, and contact holes are ...
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7078855 |
A light device includes an electron supply defining an emitter surface. A dielectric tunneling layer is disposed between the electron supply and a cathode layer. The cathode layer has at least partial photon transparency that is substant...
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6914256 |
Methods of forming a nano-scale electronic and optoelectronic devices include forming a substrate having a semiconductor layer therein and a substrate insulating layer on the semiconductor layer. An etching template having a first array ...
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6888156 |
The invention provides a thin film device where ionic crystals are epitaxially grown on a Si single crystal substrate through a proper buffer layer, and its for fabrication method. A ZnS layer is first deposited on a Si single crystal su...
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6882100 |
A light device includes an electron supply defining an emitter surface. A dielectric tunneling layer is disposed between the electron supply and a cathode layer. The cathode layer has at least partial photon transparency that is substant...
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6878958 |
A vertical cavity surface-emitting laser (VCSEL) structure and related fabrication methods are described, the VCSEL comprising amorphous dielectric distributed Bragg reflectors (DBRs) while also being capable of fabrication in a single-g...
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6844571 |
The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resi...
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6833556 |
A transistor includes a semiconductor channel disposed nearby a gate and in an electrical path between a source and a drain, wherein the channel and at least one of the source or the drain are separated by an interface layer so as to for...
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6750477 |
In a static induction transistor, in addition to a first gate layer ( 4 ), a plurality of second gate layers ( 41 ) having a shallower depth and a narrower gap therebetween than those of the first gate layer ( 4 ) are provided in an area...
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6710382 |
A silicon germanium layer is deposited over a semiconductor substrate with a gate insulating film interposed between the substrate and the silicon germanium layer. Then, an upper silicon layer in an amorphous state is deposited on the si...
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6670652 |
The monolithically integrated Enhancement/Depletion mode HEMT (high-electron-mobility transistor) of the present invention comprises: a buffer layer, a channel layer, a spacer layer, a first barrier layer, a second barrier layer, a third...
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6525379 |
Provided are a memory device capable of accurately reading out data, a method of manufacturing the same, and an integrated circuit. A first control electrode substantially faces a second control electrode with a conduction region and a s...
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6518673 |
The self inductance associated with a capacitance A 52 in a superconductor integrated circuit (FIG. 1 ) is reduced by adding a layer of superconductor metal (A 54 ) overlying the capacitor, effectively producing a negative inductance t...
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6479863 |
A tunneling charge injector includes a conducting injector electrode, a grid insulator disposed adjacent the conducting injector electrode, a grid electrode disposed adjacent the grid insulator, a retention insulator disposed adjacent th...
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6337293 |
A semiconductor quantum memory element is disclosed which can share the terminals easily among a plurality of memory elements and can pass a high current and which is strong against noise. In order to accomplish this a control electrode ...
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6087711 |
The present invention discloses an integrated circuit that is wired with a high-temperature superconductive material that is superconductive at temperatures of about 70° K and above, and methods of making the integrated circuit. The fro...
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6037606 |
In an MIM or MIS electron source that is formed by a first conductive layer 101, an insulating layer 103 that is formed onto said first conductive layer 101, and a second conductive layer 104 that is formed onto said insulating layer 103...
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6023124 |
An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode for...
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6015978 |
The method for forming a semiconductor microstructure of this invention includes the steps of: forming a mask pattern having a first opening and a second opening on a substrate having a semiconductor layer as an upper portion thereof; an...
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5962864 |
A semiconductor device comprises mutually separated first and third barrier layers interposed between the first and second patterned terminals. The device operates by the resonant tunneling of carriers from the second terminal to the fir...
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5956568 |
A method of fabricating ultra-small semiconductor devices including providing a mesa on a substrate. A plurality of overlying layers of semiconductor material are grown in overlying relationship to the mesa so that a perpendicular discon...
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5844279 |
A semiconductor device which includes, a substrate, an insulating layer formed on the substrate, a silicon layer having an exposed surface constituted by a Si (100) face, the silicon layer being provided with a tapered recess having a bo...
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5760463 |
A superconductor device which includes a first wiring part and a second wiring part which together form a superconductive wiring. The first wiring part is arranged onto a substrate and is made of a superconductor material. The second wir...
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5751012 |
There is described a memory cell having a vertically oriented polysilicon pillar diode for use in delivering large current flow through a variable resistance material memory element. The pillar diode comprises a plurality of polysilicon ...
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5665978 |
An n-type diffusion layer, an insulating layer and a first aluminum electrode are formed on a p-type silicon substrate. Fe 2 + (divalent Fe) having a vacant orbit not filled with an electron is implanted into a region of the insulating ...
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5659179 |
Ultra-small semiconductor devices and a method of fabrication including patterning the planar surface of a substrate to form a pattern edge (e.g. a mesa) and consecutively forming a plurality of layers of semiconductor material in overly...
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5644146 |
A thin film transistor comprises a dielectric substrate (1), a semiconductor layer (3) of poly-crystalline silicon layer having a drain region (8), an active gate region (4, 8-0), and a source region (7) placed on said substrate (1), a d...
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5621223 |
A superconducting device includes first and second oxide superconducting regions of a relatively thick thickness, formed directly on a principal surface of a substrate to be separate from each other, and a third oxide superconducting reg...
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5510628 |
Patterned surfaces for the selective adhesion and outgrowth of cells are useful in cell culture devices, prosthetic implants, and cell-based microsensors. Such surfaces may be prepared by a deep ultraviolet photolithographic technique.
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5464989 |
Each of the portions corresponding to the crossings of a plurality of first strip conductive layers serving as bit lines and a plurality of second strip conductive layers serving as word lines crossing the conductive layers at right angl...
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5448098 |
A first type of superconductive photoelectric device is provided by a superconductive thin film located between two electrodes. The superconductive thin film is one which has a photo-conductive effect and converts from a normally conduct...
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5447907 |
A superconducting device comprising a substrate having a principal surface, a superconducting source region and a superconducting drain region formed of an oxide superconductor on the principal surface of the substrate separated from eac...
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5442196 |
A pair of superconducting electrodes are so formed as to interpose a semiconductor therebetween, and a control electrode is formed on the semiconductor through an insulator film so as to control the superconductive weak coupling state in...
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5401980 |
A junction is formed by the establishment of first and second adjacent conductivity regions having a transition therebetween from wide (2D) to narrow (1D) with respect to the electron wavelength at the Fermi level. The electrons in the w...
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5323021 |
A bipolar transistor and a diode are incorporated in a semiconductor integrated circuit device, and an emitter electrode is constituted by lower and upper doped polysilicon films sandwiching an oxygen-leakage film which tunnels minority ...
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5306927 |
A high current amplifier, three terminal device, comprising a Josephson tunnel junction and a Schottky diode is configured so that the Josephson junction and Schottky diode share a common base electrode which is made very thin. Electrons...
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5274269 |
A ZnSe semiconductor device includes a ZnSe pn junction having p-type and n-type layers, and an ohmic contact to both layers. The ohmic contact to the p-type layer includes a p-type ZnSe crystalline semiconductor contact layer, and a con...
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5272357 |
A semiconductor device comprises; a collector region of first conductivity type; a base region of second conductivity type; an emitter region of the first conductivity type; a thin film provided on the emitter region and capable...
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5101243 |
A high T c oxide superconductive switching device [10] formed on a substantially planar substrate [18] includes a base electrode [12] comprised of a layer or film of anisotropic superconducting material. The layer has a first crystallin...
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5057485 |
In a device wherein a region which includes a superconducting weak link or a Josephson junction is irradiated with light or an electromagnetic wave so as to detect the light or an electromagnetic wave on the basis of the change of a supe...
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5001108 |
Connecting a superconductive material wiring layer to an electrode formed of normal metals (i.e. non-superconductive metals, such as aluminum), and connecting a part of a semiconductor region to the normal metal. The normal metal can con...
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4828628 |
A solar cell (10), preferably of silicon, having a semiconductive substrate (1) on one side of which an electrical field is provided by, for example, an MIS contact (1, 2, 3) to cause a separation of charge carriers generated by light en...
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4757364 |
A light emitting element formed of a metal-insulator-semiconductor junction, the improvement wherein the insulator is a Langmuir-Blodgett film of an organic substance containing at least one of a synthetic protein and a natural protein. ...
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4757359 |
An oxide fuse, and method of forming same, formed by a thin layer of oxide dielectric between a lower electrode substrate and an upper electrode. A fuse-programming bias of approximately 15V causes Fowler-Nordheim tunneling at low temper...
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4654683 |
A CCD image sensor has a plurality of elements, each such sensing element includes a doped semiconductor substrate, an insulator layer over the semiconductor substrate, and an electrode on the insulator layer which when potential is appl...
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