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7449713 |
A semiconductor memory device includes a semiconductor substrate, a semiconductor layer, a source/drain layer, first and second insulating films, and first and second gate electrodes. The semiconductor layer of one conductivity type is f...
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7439089 |
In a liquid crystal display device substrate, an insulating layer covers a thin film transistor. Another insulating layer covers a black matrix, which is formed on the insulating layer and covers the thin film transistor, a gate line, an...
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7400017 |
To provide a reverse conducting semiconductor device in which an insulated gate bipolar transistor and a free wheeling diode excellent in recovery characteristic are monolithically formed on a substrate, the free wheeling diode including...
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7378328 |
A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carb...
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7250648 |
Ferroelectric rare-earth manganese-titanium oxides and methods of their manufacture. The ferroelectric materials can provide nonvolatile data storage in rapid access memory devices.
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7196351 |
Phase change memories may exhibit improved properties and lower cost in some cases by forming the phase change material layers in a planar configuration. A heater may be provided below the phase change material layers to appropriately he...
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7183568 |
A structure (and method) for a piezoelectric device, including a layer of piezoelectric material. A nanotube structure is mounted such that a change of shape of the piezoelectric material causes a change in a stress in the nanotube struc...
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7157731 |
In a logic area, impurities are doped into the gate electrode and the source/drain diffusion regions of a MIS transistor. Thereafter in a memory cell area, word lines are patterned, source/drain regions are formed, and contact holes are ...
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6844571 |
The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resi...
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6833556 |
A transistor includes a semiconductor channel disposed nearby a gate and in an electrical path between a source and a drain, wherein the channel and at least one of the source or the drain are separated by an interface layer so as to for...
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6479863 |
A tunneling charge injector includes a conducting injector electrode, a grid insulator disposed adjacent the conducting injector electrode, a grid electrode disposed adjacent the grid insulator, a retention insulator disposed adjacent th...
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6344659 |
The present invention relates on an interferometer arrangement comprising a source electrode and a drain electrode, a base electrode to which the source electrode and the drain electrode are connected through tunnel barriers, the base el...
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6023124 |
An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode for...
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6020596 |
A FET type superconducting device comprises a substrate having a principal surface, a thin superconducting channel formed of an oxide superconductor layer over the principal surface of the substrate, a superconducting source region and a...
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5962864 |
A semiconductor device comprises mutually separated first and third barrier layers interposed between the first and second patterned terminals. The device operates by the resonant tunneling of carriers from the second terminal to the fir...
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5717222 |
A superconducting device includes a substrate, a projecting insulating region formed in a principal surface of the substrate, and a first thin film portion of an oxide superconductor formed on the projecting insulating region. Second and...
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5682041 |
An electronic part is disclosed which is furnished with an artificial super lattice obtained by alternately superposing a substance of good conductivity formed of a compound between one element selected from among the elements belonging ...
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5665979 |
A Coulomb-blockade element includes a silicon layer formed on a substrate through an insulating film. The silicon layer includes a narrow wire portion and first and second electrode portions. The narrow wire portion serves as a conductiv...
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5621223 |
A superconducting device includes first and second oxide superconducting regions of a relatively thick thickness, formed directly on a principal surface of a substrate to be separate from each other, and a third oxide superconducting reg...
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5594257 |
A superconducting device comprises a substrate having a principal surface, a non-superconducting oxide layer having a similar crystal structure to that of an oxide superconductor formed on the principal surface, which can compensates the...
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5552374 |
A superconducting device comprises a thin superconducting channel formed of an oxide superconductor, a superconducting source region and a superconducting drain region formed of an oxide superconductor at the both ends of the superconduc...
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5550389 |
A superconducting device low in power dissipation and high in operating speed is fabricated by use of a combination of a superconductor material and a semiconductor material. The superconducting device having a low power dissipation and ...
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5528052 |
Proposed is a method for operating a field-effect device comprised of a superconducting current channel having source and drain electrodes connected thereto, said superconducting current channel being separated from a gate electrode by a...
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5521862 |
A magnetic memory cell 10 is provided, which includes a layer 12 of superconducting material. A current path 22 is formed insulatively adjacent layer 12 of superconducting material, such that a current passed through current path 22 indu...
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5506197 |
A superconducting device comprising a substrate having a principal surface, a non-superconducting oxide layer having a similar crystal structure to that of the oxide superconductor, a first and a second superconducting regions formed of ...
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5485017 |
A semiconductor device has an n + source region, a first n - channel region, a barrier layer, a second n - channel region, a pair of n + drain regions, an insulating film, and a pair of metal electrodes over the respective n + d...
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5471069 |
A superconducting device includes a superconducting channel constituted in an oxide superconductor the film deposited on a deposition surface of a substrate. A source electrode and a drain electrode are formed on the oxide superconductor...
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5462918 |
A superconducting device has a stacked structure including a first superconducting layer, a first insulating layer, a second superconducting layer, a second insulating layer and a third superconducting layer stacked on a substrate in thi...
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5446015 |
For manufacturing a superconducting device, a first oxide superconductor thin film having a very thin thickness is formed on a principal surface of a substrate, and a stacked structure of a gate insulator and a gate electrode is formed o...
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5442196 |
A pair of superconducting electrodes are so formed as to interpose a semiconductor therebetween, and a control electrode is formed on the semiconductor through an insulator film so as to control the superconductive weak coupling state in...
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5430013 |
A superconducting thin film formed on a substrate, comprising an a-axis orientated oxide superconductor layer, a c-axis orientated oxide superconductor layer and an oxide semiconductor layer inserted between the a-axis orientated oxide s...
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5413982 |
A superconducting device comprising a substrate having a principal surface, a non-superconducting oxide layer having a similar crystal structure to that of the oxide superconductor, an extremely thin superconducting channel formed of a c...
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5401714 |
A field-effect structure formed on a substrate and comprising a channel with source and drain as well as a gate that is separated from the channel by an insulating layer. The channel is made of a high T c metal-oxide superconductor, e.g...
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5357125 |
A semiconductor device including a normally-on SI thyristor, and a MOSFET connected in cascade with the SI thyristor. The gate of the SI thyristor is connected to the source of the MOSFET. This arrangement makes it possible to turn the d...
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5357120 |
A compound semiconductor device is provided which includes a thyristor region constructed by four continuous layers of p-n-p-n and an MOSFET region which is formed in the intermediate n layer of the thyristor region so as to be away from...
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5352905 |
A thyristor type surge suppressor includes a P-type semiconductor substrate, an N-type first semiconductor layer provided in one surface of the semiconductor substrate, an N-type second semiconductor layer provided in the other surface o...
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5345099 |
In a CCD device, on a semiconductor substrate, and in the insulation films, plural first semiconductor regions and plural second semiconductor regions are formed buried in the insulation films, intermediating a tunneling insulation film ...
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5323021 |
A bipolar transistor and a diode are incorporated in a semiconductor integrated circuit device, and an emitter electrode is constituted by lower and upper doped polysilicon films sandwiching an oxygen-leakage film which tunnels minority ...
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5318952 |
A superconducting transistor is provided with a base layer made of a normal conductor metal, an emitter layer made of a superconductor for injecting hot electrons to the base layer, a collector layer made of a superconductor for trapping...
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5311037 |
Superconducting electrodes are formed on a semiconductor which serves as a channel. A control electrode is disposed through an insulator film or a p-n junction on the side of the semiconductor which is opposite to the semiconductor side ...
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5306927 |
A high current amplifier, three terminal device, comprising a Josephson tunnel junction and a Schottky diode is configured so that the Josephson junction and Schottky diode share a common base electrode which is made very thin. Electrons...
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5272358 |
In a superconducting device wherein the value of a superconducting current to flow between two superconducting electrodes provided in contact with a semiconductor is controlled by a control electrode provided between the superconducting ...
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5258625 |
An interband single-electron tunnel transistor utilizes an interband single-electron tunneling phenomenon between a valence band and a conduction band through a p-n junction. The transistor includes the combination of microcapacities as ...
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5239187 |
Disclosed is a transistor or diode type Josephson effect device, at least two electrodes of which are made of superconductive material. If the Josephson effect is to be exerted in a semiconductor layer between the access electrodes, the ...
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5232905 |
A superconducting device has a structure of superconductor - normal-conductor (semiconductor) - superconductor. The superconductors constituting the superconducting device are made of a super-conducting oxide material of K 2 NiF 4 type...
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5231295 |
A field-effect transistor comprises, on a substrate, a layer of semiconductor material incorporating natural or artificial inclusions of superconducting material. The source, drain and gate electrodes are made on this layer. Applications...
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5160983 |
Superconducting electrodes are formed on a semiconductor which serves as a channel. A control electrode is disposed through an insulator film or a p-n junction on the side of the semiconductor which is opposite to the semiconductor side ...
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5106822 |
A superconducting transistor comprises: a superconducting collector layer for drawing out quasiparticles from a superconducting base layer while a carrier concentration thereof is maintained at a level lower than in metal and at a high l...
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5071832 |
A field effect type Josephson transistor in which a source electrode and a drain electrode are provided with a gap therebetween, a tunnel film is provided in the gap between the source electrode and drain electrode, and a gate electrode ...
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4939559 |
The present invention relates to DEIS (Dual Electron Injector Structure) EAROM (Electrically Alterable Read Only Memory) devices which utilize a silicon-rich, silicon dioxide insulator between injectors which has an excess of silicon the...
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