Home| Login| Sign Up| Contact|

Matches 1 - 50 out of 169	1 2 3 4 >

Document	Document Title
7449713	Semiconductor memory device A semiconductor memory device includes a semiconductor substrate, a semiconductor layer, a source/drain layer, first and second insulating films, and first and second gate electrodes. The semiconductor layer of one conductivity type is f...
7408235	Quantum coherent switch utilizing commensurate nanoelectrode and charge density periodicities A quantum coherent switch having a substrate formed from a density wave (DW) material capable of having a periodic electron density modulation or spin density modulation, a dielectric layer formed onto a surface of the substrate that is ...
7382001	Enhancement mode III-nitride FET A III-nitride switch includes a recessed gate contact to produce a nominally off, or an enhancement mode, device. By providing a recessed gate contact, a conduction channel formed at the interface of two III-nitride materials is interrup...
7351997	Single photon receptor A photon receptor having a sensitivity threshold of a single photon is readily fabricated on a nanometric scale for compact and/or large-scale array devices. The fundamental receptor element is a quantum dot of a direct semiconductor, as...
7323711	High-temperature superconductive device A high-temperature superconductive device is disclosed, including a ramp-edge junction. The ramp-edge junction includes a first electrode layer ( 5 ) that defines the size of the ramp-edge junction and a second electrode layer ( 6 ). The...
7307275	Encoding and error suppression for superconducting quantum computers The present invention involves a quantum computing structure, comprising: one or more logical qubits, which is encoded into a plurality of superconducting qubits; and each of the logical qubits comprises at least one operating qubit and ...
7250648	Ferroelectric rare-earth manganese-titanium oxides Ferroelectric rare-earth manganese-titanium oxides and methods of their manufacture. The ferroelectric materials can provide nonvolatile data storage in rapid access memory devices.
7250624	Quasi-particle interferometry for logical gates A quantum computer can only function stably if it can execute gates with extreme accuracy. “Topological protection” is a road to such accuracies. Quasi-particle interferometry is a tool for constructing topologically protected gates....
7208784	Single-electron transistor for detecting biomolecules A single-electron transistor includes a projecting feature, such as a pyramid, that projects from a face of a substrate. A first electrode is provided on the substrate face that extends onto the projecting feature. A second electrode is ...
7166858	Variable capacitor single-electron device The present invention provides a single-electron transistor device 100 . The device comprises a source 105 and drain 110 located over a substrate 115 and a quantum island 120 situated between the source and drain, to form tunnel...
7157731	Semiconductor device and its manufacture In a logic area, impurities are doped into the gate electrode and the source/drain diffusion regions of a MIS transistor. Thereafter in a memory cell area, word lines are patterned, source/drain regions are formed, and contact holes are ...
7151274	Dual panel type organic electroluminescent device An organic electroluminescent device includes first and second substrates facing each other and spaced apart from each other, each of the first and second substrates having a first region and a second region in a periphery of the first r...
7145170	Coupled superconducting charge quantum bit device and controlled-not gate using the same A control quantum bit circuit and a target quantum bit circuit each have a quantum box electrode including a superconductor, a counter electrode coupled to the quantum box electrode through a tunnel barrier, and a gate electrode coupled ...
7138651	Logic apparatus and logic circuit A logic apparatus comprises a first single-electron device formed of a first conductive island, two first tunnel barriers with the first conductive island interposed, first and second electrodes, and a first charge storage region, and a ...
7135701	Adiabatic quantum computation with superconducting qubits A method for computing using a quantum system comprising a plurality of superconducting qubits is provided. Quantum system can be in any one of at least two configurations including (i) an initialization Hamiltonian H 0 and (ii) a probl...
6979836	Superconducting low inductance qubit A superconducting structure that can operate, for example, as a qubit or a superconducting switch is presented. The structure includes a loop formed from two parts. A first part includes two superconducting materials separated by a junct...
6974971	Matrix array devices with flexible substrates A matrix array device, for example, an active matrix display device, image sensor, or the like, comprises a matrix circuit ( 12, 14, 16, 18 ) carried on a flexible substrate ( 20 ) which circuit includes an array of semiconductor devices...
6943368	Quantum logic using three energy levels A method for quantum computing with a quantum system comprising a first energy level, a second energy level, and a third energy level. The first energy level and said second energy level are capable of being degenerate with respect to ea...
6936841	Methods for controlling qubits A control system for an array of qubits is disclosed. The control system according to the present invention provides currents and voltages to qubits in the array of qubits in order to perform functions on the qubit. The functions that th...
6872645	Methods of positioning and/or orienting nanostructures Methods of positioning and orienting nanostructures, and particularly nanowires, on surfaces for subsequent use or integration. The methods utilize mask based processes alone or in combination with flow based alignment of the nanostructu...
6844571	III-nitride light-emitting device with increased light generating capability The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resi...
6833556	Insulated gate field effect transistor having passivated schottky barriers to the channel A transistor includes a semiconductor channel disposed nearby a gate and in an electrical path between a source and a drain, wherein the channel and at least one of the source or the drain are separated by an interface layer so as to for...
6822255	Finger SQUID qubit device A finger SQUID qubit device and method for performing quantum computation with said device is disclosed. A finger SQUID qubit device includes a superconducting loop and one or more superconducting fingers, wherein the fingers extend to t...
6818914	Semiconductor element and process for manufacturing the same A semiconductor quantum memory element is disclosed which can share the terminals easily among a plurality of memory elements and can pass a high current and which is strong against noise. In order to accomplish this a control electrode ...
6812484	Finger squid qubit device A finger SQUID qubit device and method for performing quantum computation with said device is disclosed. A finger SQUID qubit device includes a superconducting loop and one or more superconducting fingers, wherein the fingers extend to t...
6787795	Logic apparatus and logic circuit A logic apparatus having first and second single-electron devices connected serially or in parallel. Each of the single-electron devices includes a conductive island insulatively disposed between two tunnel barriers, which separate the c...
6777808	Capacitor for signal propagation across ground plane boundaries in superconductor integrated circuits The self inductance associated with a capacitance A 52 in a superconductor integrated circuit (FIG. 1 ) is reduced by adding a layer of superconductor metal (A 54 ) overlying the capacitor, effectively producing a negative inductance t...
6774411	Bipolar transistor with reduced emitter to base capacitance According to a disclosed embodiment, a base region is grown on a transistor region. A dielectric layer is next deposited over the base region. The dielectric layer can comprise, for example, silicon dioxide, silicon nitride, or a suitabl...
6710368	Quantum tunneling transistor A quantum tunneling transistor which provides two switching inputs, for example source and drain as with a conventional FET, and a control input which, in one embodiment, performs much like the gate input of a conventional FET. In one em...
6653653	Single-electron transistors and fabrication methods in which a projecting feature defines spacing between electrodes A single-electron transistor includes a projecting feature, such as a pyramid, that projects from a face of a substrate. A first electrode is provided on the substrate face that extends onto the projecting feature. A second electrode is ...
6614047	Finger squid qubit device A finger SQUID qubit device and method for performing quantum computation with said device is disclosed. A finger SQUID qubit device includes a superconducting loop and one or more superconducting fingers, wherein the fingers extend to t...
6518673	Capacitor for signal propagation across ground plane boundaries in superconductor integrated circuits The self inductance associated with a capacitance A 52 in a superconductor integrated circuit (FIG. 1 ) is reduced by adding a layer of superconductor metal (A 54 ) overlying the capacitor, effectively producing a negative inductance t...
6479863	Method and apparatus for injecting charge onto the floating gate of a nonvolatile memory cell A tunneling charge injector includes a conducting injector electrode, a grid insulator disposed adjacent the conducting injector electrode, a grid electrode disposed adjacent the grid insulator, a retention insulator disposed adjacent th...
6410934	Silicon nanoparticle electronic switches An electronic fast switch for operation at room temperature utilizing uniform silicon nanoparticles (˜1 nm with about 1 part per thousand exceeding 1 nm) between two conducting electrodes. The silicon nanoparticles, when on an n-type si...
6407426	Single electron resistor memory device and method A memory device includes a plurality of cells, each having a first electrode coupled to a first location on semiconductor material, a second electrode coupled to a second location disposed away from the first location on the semiconducto...
6384423	Process for reducing surface roughness of superconductor integrated circuit having a ground plane of niobium nitride of improved smoothness The invention is a process for reducing roughness of a surface of a superconductor material ( 23 ) having an undesirable surface roughness ( 30 and 32 ) and a trilayer superconductor integrated circuit ( 100 ). The process for reducing...
6365912	Superconducting tunnel junction device A superconductive tunnel junction device in which quasiparticles in a superconductive region (S 1 ), relax into a normal metal trap (N 1 ) releasing their potential energy in electron-electron interactions to increase the number of excit...
6344659	Superconducting transistor arrangement and a method relating thereto The present invention relates on an interferometer arrangement comprising a source electrode and a drain electrode, a base electrode to which the source electrode and the drain electrode are connected through tunnel barriers, the base el...
6337293	Method of forming a quantum memory element having a film of amorphous silicon A semiconductor quantum memory element is disclosed which can share the terminals easily among a plurality of memory elements and can pass a high current and which is strong against noise. In order to accomplish this a control electrode ...
6198113	Electrostatically operated tunneling transistor A transistor operated by changing the electrostatic potential of an island disposed between two tunnel junctions. The transistor has an island of material which has a band gap (e.g. semiconductor material). Source and drain contacts are ...
6160266	Superconducting device and a method of manufacturing the same This invention provides a superconducting device with good characteristics that can be reproduced at an arbitrary place on a substrate and a method of manufacturing the same. A convex region (a processed, linearly shaped platinum thin fi...
6111268	Electronic device The invention relates to an inverted JOFET with an at least bicrystalline electrically conductive substrate-layer bearing an insulating element and a superconductive element with a Josephson-junction. The substrate-layer is connected to ...
6057556	Tunneling device and method of producing a tunneling device The tunnel-effect device comprises an input electrode 3, an output electrode 4, and N control electrodes 5 separated with tunneling barriers, the latter barriers and the interbarrier space therein appear as an ordered structure of molecu...
6023124	Electron emission device and display device using the same An electron emission device exhibits a high electron emission efficiency. The device includes an electron supply layer of metal or semiconductor, an insulator layer formed on the electron supply layer, and a thin-film metal electrode for...
6020596	Superconducting device including an isolation layer A FET type superconducting device comprises a substrate having a principal surface, a thin superconducting channel formed of an oxide superconductor layer over the principal surface of the substrate, a superconducting source region and a...
5962864	Gated resonant tunneling device and fabricating method thereof A semiconductor device comprises mutually separated first and third barrier layers interposed between the first and second patterned terminals. The device operates by the resonant tunneling of carriers from the second terminal to the fir...
5952683	Functional semiconductor element with avalanche multiplication A functional semiconductor element, which is designed to perform an ultrafast amplifying, bistable, similar functional operation by initiating and stopping an avalanche multiplication in one of i-type layers of what is called a triangula...
5946572	Method of manufacturing a semiconductor device having recessed gate structures A gate structure including semiconductor regions each having a high impurity-concentration and being formed within respective one of recessed portions provided in a surface of a first semiconductor substrate, and then a second semiconduc...
5912472	Switchable planar high frequency resonator and filter A portion of the superconductor in a planar resonator made from that superconductor can be switched into the normally conducting state so that its effective lateral dimensions are changed. The special advantage of this planar resonator i...
5910662	Semiconductor substrate having a superconducting thin film A semiconductor substrate comprising a single crystal substrate base such a silicon and a superconducting thin film layer deposited on said substrate base and composed of compound oxide such as Ln 1 Ba 2 Cu 3 O 7 -δ. (Ln is lanthanide).

Matches 1 - 50 out of 169	1 2 3 4 >