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Document	Document Title
7473921	Nonvolatile memory cell with concentric phase change material formed around a pillar arrangement A memory cell comprises a first feature and a second feature. The second feature comprises a dielectric material and defines an opening at least partially overlying the first feature. A third feature is formed on the first feature and pa...
7473574	Memory element with improved contacts A phase-change memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contacts having a sidewall electrically coupled to the memory material.
7470923	Semiconductor integrated circuit device With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a transistor for selection of memory cells, a ...
7465952	Programmable non-volatile resistance switching device A memory element comprises a first number of electrodes and a second number of electrically conducting channels between sub-groups of two of said electrodes, the channels exhibiting an electrical resistance that is reversibly switchable ...
7462858	Fabrication of phase change memory element with phase-change electrodes using conformal deposition A phase change memory element with phase change electrodes, and method of making the same. Exemplary embodiments include a phase change bridge, including a bottom contact layer, a first insulating layer disposed on the bottom contact lay...
7462857	Memory device including resistance-changing function body A resistance-changing function body includes an object made of a first substance and interposed between a first electrode and a second electrode, and a plurality of particles made of a second substance and arranged within the object so t...
7459759	Magnetic random access memory A magnetic random access memory described in embodiments of the present invention comprises a conductive line, a soft magnetic material which surrounds the conductive line, a gap disposed in a part of the soft magnetic material, and a ma...
7459717	Phase change memory cell and manufacturing method A phase change memory cell includes first and second electrodes having generally coplanar surfaces spaced apart by a gap and a phase change bridge electrically coupling the first and second electrodes. The phase change bridge may extend ...
7459715	Resistance change memory device A resistance change memory device including: a semiconductor substrate; cell arrays stacked above the substrate, bit lines and word lines; a read/write circuit formed on the semiconductor substrate; first and second vertical wirings conn...
7456421	Vertical side wall active pin structures in a phase change memory and manufacturing methods A programmable resistor memory, such as a phase change memory, with a memory element comprising narrow vertical side wall active pins is described. The side wall active pins comprise a programmable resistive material, such as a phase cha...
7456420	Electrode for phase change memory device and method An electrode for a memory material of a phase change memory device is disclosed. The electrode includes a first layer adhered to the memory material, the first layer including a nitride (AN x ), where A is one of titanium (Ti) and tungst...
7453082	Small electrode for a chalcogenide switching device and method for fabricating same A memory cell and a method of fabricating the memory cell having a small active area are provided. By forming a spacer in a window that is sized at the photolithographic limit, in one embodiment, a pore may be formed in dielectric layer ...
7453081	Phase change memory cell including nanocomposite insulator A memory cell includes a first electrode, a second electrode, storage material positioned between the first electrode and the second electrode, and a nanocomposite insulator contacting the storage material.
7450411	Phase change memory device and manufacturing method A phase change memory device comprises a photolithographically formed phase change memory cell having first and second electrodes and a phase change bridge positioned between and electrically coupling the opposed sides of the electrodes ...
7449711	Phase-change-type semiconductor memory device A phase-change memory device includes a plurality of bit lines extending in a row direction, a plurality of selection lines extending in a column direction, and an array of memory cells each disposed at one of intersections between the b...
7449710	Vacuum jacket for phase change memory element A memory device including a phase change element and a vacuum jacket. The device includes a first electrode element; a phase change element in contact with the first electrode element; an upper electrode element in contact with the phase...
7439536	Phase change memory cell with tubular heater and manufacturing method thereof A phase change memory cell includes a phase change region of a phase change material, a heating element of a resistive material, arranged in contact with the phase change region and a memory element formed in said phase change region at ...
7433227	Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a chalcogenide glass region is provided with a plurality of alternating tin chalcogenide and metal layers proximate thereto. The method o...
7432577	Semiconductor component for the detection of radiation, electronic component for the detection of radiation, and sensor system for electromagnetic radiation A semiconductor component for detecting electromagnetic radiation includes a contact between a metal and a semiconductor. The semiconductor has at least one metal-chalcogenide compound semiconductor as an optical absorbing material or is...
7429777	Semiconductor device with a gate electrode having a laminate structure A semiconductor device includes a semiconductor substrate having a semiconductor layer, a gate electrode, a source region, a drain region, an element separation insulating film layer and a wiring. The gate electrode include a laminated s...
7427770	Memory array for increased bit density A memory array having a plurality of resistance variable memory units and method for forming the same are provided. Each memory unit includes a first electrode, a resistance variable material over the first electrode, and a first second-...
7425720	Semiconductor device A programmable semiconductor device has a switch element in an interconnection layer, wherein in at least one of the inside of a via, interconnecting a wire of a first interconnection layer and a wire of a second interconnection layer, a...
7423327	Spin transistor based on the spin-filter effect and a non-volatile memory using spin transistors A spin transistor comprises a spin injector for injecting, from a first nonmagnetic electrode carriers with a spin parallel to a spin band forming the band edge of a first ferromagnetic barrier layer, to a second nonmagnetic electrode la...
7423282	Memory structure and method of manufacture A solid state electrolyte memory structure includes a solid state electrolyte layer, a metal layer on the solid state electrolyte layer, and an etch stop layer on the metal layer.
7423281	Microelectronic device with a plurality of storage elements in serial connection and method of producing the same The micro electronic device comprises a substrate with a surface and a plurality of storage elements in serial connection formed at the surface of the substrate, a plurality of transistors, each transistor being connected parallel to one...
7420199	Resistivity changing memory cell having nanowire electrode A memory cell includes a first electrode comprising a nanowire, a second electrode, and phase-change material between the first electrode and the second electrode.
7420198	Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer and methods of manufacturing the same Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer are provided. The non-volatile memory cells include a lower and upper electrodes overlapped with each other. A transition metal oxide lay...
7417245	Phase change memory having multilayer thermal insulation A memory cell includes a first electrode, a second electrode, phase-change material contacting the first electrode and the second electrode, multilayer thermal insulation contacting the phase-change material, and dielectric material cont...
7414258	Spacer electrode small pin phase change memory RAM and manufacturing method A memory device comprising a first pan-shaped electrode having a side wall with a top side, a second pan-shaped electrode having a side wall with a top side and an insulating wall between the first side wall and the second side wall. The...
7411818	Programmable fuse/non-volatile memory structures using externally heated phase change material A programmable phase change material (PCM) structure includes a heater element formed at a transistor gate level of a semiconductor device, the heater element further including a pair of electrodes connected by a thin wire structure with...
7411208	Phase-change memory device having a barrier layer and manufacturing method A phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer over...
7408181	Phase-change memory device and method of manufacturing the same Disclosed are a phase-change memory device and its manufacturing method, which can reduce a contact area between a bottom electrode and a phase-change layer, thereby reducing the quantity of current necessary for phase change. The phase-...
7407829	Electrically programmable memory element with improved contacts A method of making an electrically programmable memory element, comprising: providing a first dielectric layer; forming a conductive material over the first dielectric layer; forming a second dielectric layer over the conductive material...
7405420	Method and system for chalcogenide-based nanowire memory Chalcogenide-based nanowire memories are implemented using a variety of methods and devices. According to an example embodiment of the present invention, a method of manufacturing a memory circuit is implemented. The method includes depo...
7405419	Unidirectionally conductive materials for interconnection A method of forming and a device including an interconnect structure having a unidirectional electrical conductive material is described. The unidirectional conductive material may overlie interconnect materials, and/or may surround inte...
7402851	Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same Phase-changeable memory devices and method of fabricating phase-changeable memory devices are provided that include a phase-changeable material pattern of a phase-changeable material that may include nitrogen atoms and/or silicon atoms. ...
7402829	Structured silicon anode A silicon/lithium battery can be fabricated from a silicon substrate. This allows the battery to be produced as an integrated unit on a chip. The battery includes a silicon anode formed from sub-micron diameter pillars of silicon fabrica...
7397060	Pipe shaped phase change memory A memory cell device includes a bottom electrode, pipe shaped member comprising phase change material and a top electrode in contact with the pipe-shaped member. An electrically and thermally insulating material is inside the pipe-shaped...
7394090	Non-volatile memory and the fabrication method A non-volatile memory comprising: a first substrate ( 100 ) and a second substrate ( 110 ), the first substrate ( 100 ) having a plurality of switching elements ( 4 ) arranged in matrix, and a plurality of first electrodes ( 18 ) connect...
7394089	Heat-shielded low power PCM-based reprogrammable EFUSE device An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding ...
7394087	Phase-changeable memory devices and methods of forming the same A phase-changeable memory device includes a substrate having a contact region on an upper surface thereof. An insulating interlayer on the substrate has an opening therein, and a lower electrode is formed in the opening. The lower electr...
7393798	Resistance variable memory with temperature tolerant materials A PCRAM memory device having a chalcogenide glass layer, preferably comprising antimony selenide having a stoichometric formula of about Sb 2 Se 3 , and a metal-chalcogenide layer and methods of forming such a memory device.
7385219	Optimized solid electrolyte for programmable metallization cell devices and structures A microelectronic programmable structure suitable for storing information, and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conduct...
7385218	Phase changeable layers including protruding portions in electrodes thereof and methods of forming same A structure in a phase changeable memory cell can include a bottom electrode having an interlayer dielectric layer thereon, the bottom electrode can have a recess therein that extends beyond a boundary between the bottom electrode and th...
7381982	Method for fabricating chalcogenide-applied memory A chalcogenide memory cell includes a lower electrode, a chalcogenide layer, and an upper electrode. The lower electrode includes a tapered cavity. The chalcogenide layer is formed in the tapered cavity of the lower electrode. One side o...
7378679	Patterned substrate, electro-optical device, and method for manufacturing an electro-optical device A patterned substrate includes a laminated pattern having laminated patterns that are formed by drying droplets containing a pattern formation material. A lower layer pattern contains lyophilic microparticles that are lyophilic with resp...
7378678	Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells Disclosed are non-volatile memory devices that incorporate a series of single or double memory cells. The single memory cells are essentially “U” shaped. The double memory cells comprise two essentially “U” shaped memory cells. E...
7378328	Method of fabricating memory device utilizing carbon nanotubes A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carb...
7375365	Multilevel phase-change memory, manufacture method and operating method thereof A multilevel phase-change memory, manufacture method and operating method thereof are provided. The memory includes a first phase change layer, a second phase change layer, a first heating layer formed on one surface of the first phase c...
7374174	Small electrode for resistance variable devices A memory element comprising first and second electrodes is provided. The first electrode is tapered such that a first end of the first electrode is larger than a second end of the first electrode. A resistance variable material layer is ...

Matches 1 - 50 out of 297	1 2 3 4 5 6 >