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7465951 |
The invention provides for a write-once nonvolatile memory array, the memory cells comprising a phase change material, such as a chalcogenide. Phase change is achieved in chalcogenide memories by thermal means. The initial, unprogrammed ...
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7453085 |
A nano-elastic memory device and a method of manufacturing the same. The nano-elastic memory device may include a substrate, a plurality of lower electrodes arranged in parallel on the substrate, a support unit formed of an insulating ma...
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7432179 |
A method of forming semiconductor structures comprises following steps. A gate dielectric layer is formed over a substrate in an active region. A gate electrode layer is formed over the gate dielectric layer. A first photo resist is form...
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7423285 |
The difficulty of miniaturization of large-scale integrated circuits in electric devices based on the conventional techniques involving three-dimensional device structures or the introduction of novel materials is solved. Wires 2 and ...
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7420204 |
An organic transistor is capable of emitting light at high luminescence efficiency, operating at high speed, handling large electric power, and can be manufactured at low cost. The organic transistor includes an organic semiconductor lay...
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7405419 |
A method of forming and a device including an interconnect structure having a unidirectional electrical conductive material is described. The unidirectional conductive material may overlie interconnect materials, and/or may surround inte...
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7378328 |
A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carb...
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7351992 |
The invention provides for a nonvolatile memory cell comprising a heater layer in series with a phase change material, such as a chalcogenide. Phase change is achieved in chalcogenide memories by thermal means. Concentrating thermal ener...
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7318962 |
A device having a substrate, a pair of ferromagnetic leads on a surface of the substrate, laterally separated by a gap, and one or more ferromagnetic microparticles comprising a conductive coating at least partially within the gap. The c...
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7265803 |
A circuit sheet comprising a substrate and wells dispersed on the substrate operable to hold conductive polymers that form circuit devices.
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7229676 |
Processes for effecting thermal transfer of electroactive organic material are disclosed wherein unwanted portions of a layer of electroactive organic material supported by a donor element are removed or transferred from the layer by the...
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7170089 |
A new compound derivative that can be used to form a unit molecular film as a rectifier in a molecular electronic device, a new rectifying compound (4,5,9,10-tetrahydro-pyren-2-yl)-carbamic acid 4-(2-methylsulfanyl-alkyl)-3,5-dinitro-ben...
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7164188 |
A plurality of buried conductors and/or buried plate patterns formed within a monocrystalline substrate is disclosed. A plurality of empty-spaced buried patterns are formed by drilling holes in the monocrystalline substrate and annealing...
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7126153 |
An organic transistor is capable of emitting light at high luminescence efficiency, operating at high speed, handling large electric power, and can be manufactured at low cost. The organic transistor includes an organic semiconductor lay...
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7011987 |
A packaging fabrication for an organic electroluminescence panel is disclosed. The panel comprises a printed circuit board, one or a plurality of OEL panels and a plurality of bumps, wherein the OEL is provided with poly solder interconn...
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6992321 |
High quality epitaxial layers of piezoelectric monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the piezoelectric monocrystalline layers...
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6897467 |
An ovonic phase-change semiconductor memory device having a reduced area of contact between electrodes of chalcogenide memories, and methods of forming the same, are disclosed. Such memory devices are formed by forming a tip protruding f...
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6878595 |
The present invention relates to a technique that can be used to reduce the sensitivity of integrated circuits to a failure mechanism to which some integrated circuits (ICs) are susceptible, known as latchup. The present invention relate...
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6797979 |
The invention relate to a damascene chalcogenide memory cell structure. The damascene chalcogenide memory cell structure is fabricated under conditions that simplify previous process flows. The damascene chalcogenide memory cell structur...
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6794677 |
Variations in the size of a linear pattern resulting from difference in mask pattern layout are prevented by setting the perimeter of the linear pattern per unit area in a specified range irrespective of the type of a semiconductor integ...
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6781145 |
An ovonic phase-change semiconductor memory device having a reduced area of contact between electrodes of chalcogenide memories, and methods of forming the same are disclosed. Such memory devices are formed by forming a tip protruding fr...
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6770524 |
An apparatus including a contact on a substrate, a dielectric material overlying the contact, a phase change element overlying the dielectric material on a substrate, and a heater element disposed in the dielectric material and coupled t...
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6756605 |
Molecular scale electronic devices are disclosed. Such devices include at least two conductive contacts, and a conductive path bridging the contacts. The conductive path is able to be written into a perturbed state by a voltage pulse, wh...
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6674146 |
An apparatus including a contact point on a substrate; a first dielectric layer comprising a material having a dielectric constant less than five formed on the contact point, and a different second dielectric layer formed on the substrat...
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6642627 |
A semiconductor chip comprises a semiconductor substrate having integrated circuits formed on a cell region and a peripheral circuit region adjacent to each other. A bond pad-wiring pattern is formed on the semiconductor substrate. A pad...
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6621095 |
An apparatus including a contact on a substrate, a dielectric material overlying the contact, a phase change element overlying the dielectric material on a substrate, and a heater element disposed in the dielectric material and coupled t...
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6465884 |
An semiconductor device including logic circuitry, a plurality of pins, and an interface unit coupling the logic circuitry to the plurality of pins, wherein the interface unit permits any of the pins to be coupled to any portion of the l...
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6395590 |
A process is provided for manufacturing a semiconductor device. A lower polycrystalline silicon layer is deposited on a substrate surface and on one or more structures that protrude from the substrate surface. A dielectric layer is forme...
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6387726 |
A method of fabricating a back surface point contact silicon solar cell having p-doped regions and n-doped regions on the same side by forming a passivating layer on a surface of the cell having opened windows at the p-doped regions and ...
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6329670 |
A conductive composition of titanium boronitride (TiB x N y ) is disclosed for use as a conductive material. The titanium boronitride is used as conductive material in the testing and fabrication of integrated circuits. For example, the...
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6329666 |
An ovonic phase-change semiconductor memory device having a reduced area of contact between electrodes of chalcogenide memories, and methods of forming the same. Such memory devices are formed by forming a tip protruding from a lower sur...
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6274402 |
A method of fabricating a back surface point contact silicon solar cell having p-doped regions and n-doped regions on the same side by forming a passivating layer on a surface of the cell having opened windows at the p-doped regions and ...
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6147395 |
An electrode structure for use in a chalcogenide memory is disclosed. The electrode has a substantially frusto-conical shape, and is preferably formed by undercut etching a polysilicon layer beneath an oxide pattern. With this structure,...
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6114713 |
A method for manufacturing a memory device having a plurality of memory cells. Each memory cell has a non-volatile resistive memory element with a small active area. A plurality of memory cells are formed at selected locations of at leas...
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6047068 |
A method and an apparatus for determining an encryption key associated with an integrated circuit having a memory plane that includes a matrix of electric contacts on it's surface and a layer of inhomogeneous electric resistivity materia...
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6025633 |
A process is provided for producing active and passive devices on various levels of a semiconductor topography. As such, the present process can achieve device formation in three dimensions to enhance the overall density at which an inte...
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6015977 |
A method for manufacturing a memory device having a plurality of memory cells. Each memory cell has a non-volatile resistive memory element with a small active area. A plurality of memory cells are formed at selected locations of at leas...
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5693975 |
A structure for a complementary field effect transistor includes a semiconductor body having a first body region of a first conductivity type and an adjoining second body region of an opposite second conductivity type. A buried dielectri...
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5434531 |
An integrated circuit which includes a pair of serially arranged P channel transistor devices connected with their source and drain terminals in series. The devices are constructed as N well devices in a P substrate. Using a pair of N we...
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5410161 |
Dummy transistors (each composed of a dummy gate electrode and n + -diffused layers) are disposed adjacent to a transistor for characteristic checking which is composed of a gate electrode, n + -diffused layers and aluminum interconnec...
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5404025 |
A semiconductor vacuum device including a semiconductor substrate 3, an insulator film 2 formed on the substrate 3, and a single crystal semiconductor film 1 formed on the insulator film 2. The single crystal semiconductor film 1 has a f...
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5289031 |
A semiconductor device comprises a semiconductor substrate having first and second major surfaces, semiconductor elements formed on the first surface of the semiconductor substrate, and a blocking layer formed within the substrate at a g...
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5182624 |
The present invention provides a large area, high pixel density solid state radiation detector with a real-time and a non-destructive read-out. The solid state detector comprises a plurality of field effect transistors deposited onto a s...
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4927770 |
A back surface point contact silicon solar cell having improved characteristics is fabricated by hydrogenating a silicon-silicon oxide interface where hydrogen atoms are diffused through silicon nitride and silicon oxide passivating laye...
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4353070 |
A high speed detection system for operation with submillimeter wave radiation comprises a plurality of non-linear elements and an antenna structure for coupling said elements and the radiation. The elements are typically Schottky diodes ...
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4317091 |
A negative semiconductor resistance comprises two separate semiconductor elements of the same conductivity characteristic and with at least three areas of contact of a diameter less than 1.10 -2 cm, a voltage being applied to the semico...
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3951694 |
A method of manufacturing a semiconductor device by means of doping via a mask. According to the invention a mask is used which is manufactured by providing one or more "first" apertures in a masking layer, after which islands of an isot...
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3780427 |
A zinc sulfide body is treated to form an ohmic contact by applying a Group II metal or alloy thereof to a surface region of the body in the presence of a source of donor precursor such as a Group IIIa metal or a halogen and heating the ...
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3755678 |
A metal to metal point contact diode with an extremely fast response comprising a metal base and an extremely thin metal wire, a cat whisker, with an end point about the order of a thousand angstroms (0.1 micron) or less in diameter at i...
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3660734 |
A bond type diode which is composed of gallium arsenide doped with tin within the range of 1 × 10 16 to 5 × 10 17 atoms/cm 3 , preferably about 3 × 10 17 atoms/cm 3 , of a gold wire containing zinc welded onto a portion of a surfac...
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