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Document	Document Title
7465951	Write-once nonvolatile phase change memory array The invention provides for a write-once nonvolatile memory array, the memory cells comprising a phase change material, such as a chalcogenide. Phase change is achieved in chalcogenide memories by thermal means. The initial, unprogrammed ...
7422926	Self-aligned process for manufacturing phase change memory cells A process for manufacturing phase change memory cells includes the step of forming a heater element in a semiconductor wafer and a storage region of a phase change material on and in contact with the heater element. In order to form the ...
7381611	Multilayered phase change memory A phase change layer may switch between more and less conductive states in response to electrical stimulation. The phase change layer may be positioned over a non-switching ovonic material which acts as an electrode, a resistive heater, ...
7374174	Small electrode for resistance variable devices A memory element comprising first and second electrodes is provided. The first electrode is tapered such that a first end of the first electrode is larger than a second end of the first electrode. A resistance variable material layer is ...
7358521	Lateral phase change memory and method therefor Briefly, in accordance with an embodiment of the invention, a lateral phase change memory and a method to manufacture a phase change memory is provided. The method may include forming a conductor material over a substrate and patterning ...
7351992	Forming nonvolatile phase change memory cell having a reduced thermal contact area The invention provides for a nonvolatile memory cell comprising a heater layer in series with a phase change material, such as a chalcogenide. Phase change is achieved in chalcogenide memories by thermal means. Concentrating thermal ener...
7351991	Methods for forming phase-change memory devices Phase-change memory devices include a phase-change material layer and a first electrode having a contact area therebetween. The contact area extends into a recess of the first electrode to provide current density concentration.
7335907	Memory device A phase change memory device is provided which is constituted by memory cells using memory elements and select transistors and having high heat resistance to be capable of an operation at 140 degrees or higher. As a device configuration,...
7323356	LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se an...
7288784	Structure for amorphous carbon based non-volatile memory A memory device including at least one first memory element comprising a first layer of amorphous carbon over at least one second memory element comprising a second layer of amorphous carbon. The device also includes at least one first c...
7288468	Luminescent efficiency of semiconductor nanocrystals by surface treatment A method for improving the luminescent efficiency of semiconductor nanocrystals by surface treatment with a reducing agent to produce an improvement in luminescent efficiency and quantum efficiency without creating changes in the lumines...
7282730	Forming a carbon layer between phase change layers of a phase change memory A carbon containing layer may be formed between a pair of chalcogenide containing layers of a phase change memory. When the lower chalcogenide layer allows current to pass, a filament may be formed therein. The filament then localizes th...
7229676	Thermal imaging processes and products of electroactive organic material Processes for effecting thermal transfer of electroactive organic material are disclosed wherein unwanted portions of a layer of electroactive organic material supported by a donor element are removed or transferred from the layer by the...
7220982	Amorphous carbon-based non-volatile memory A resistance variable memory element and a method for forming the same. The memory element has an amorphous carbon layer between first and second electrodes. A metal-containing layer is formed between the amorphous carbon layer and the s...
7200318	Near infra-red composite polymer-nanocrystal materials and electro-optical devices produced therefrom The invention comprises a composite material comprising a host material in which are incorporated semiconductor nanocrystals. The host material is light-transmissive and/or light-emissive and is electrical chargetransporting thus permitt...
7157716	Semiconductor radiation detector and radiation detection apparatus The present invention provides a semiconductor radiation detector and radiation detection apparatus capable of improving energy resolution and the semiconductor radiation detection apparatus includes a semiconductor radiation detector an...
7151273	Silver-selenide/chalcogenide glass stack for resistance variable memory The invention is related to methods and apparatus for providing a resistance variable memory element with improved data retention and switching characteristics. According to an embodiment of the invention a resistance variable memory ele...
7119355	Lateral phase change memory and method therefor Briefly, in accordance with an embodiment of the invention, a lateral phase change memory and a method to manufacture a phase change memory is provided. The method may include forming a conductor material over a substrate and patterning ...
7061013	Phase change storage cells for memory devices, memory devices having phase change storage cells and methods of forming the same Storage cells for a phase change memory device and phase change memory devices are provided that include a first phase change material pattern and a first high-resist phase change material pattern on the first phase change material patte...
7057202	Ultra-high density storage device using phase change diode memory cells and methods of fabrication thereof An ultra-high density data storage device using phase-change diode memory cells, and having a plurality of emitters for directing beams of directed energy, a layer for forming multiple data storage cells and a layered diode structure for...
7023014	Non-volatile memory and fabrication method thereof The present invention relates to a non-volatile memory comprising: a first electrode ( 11 ); a second electrode ( 12 ); and a phase-change recording medium ( 14 ) sandwiched between the first electrode ( 11 ) and the second electrode ( 1...
7011987	Method of fabricating organic electroluminescence panel package A packaging fabrication for an organic electroluminescence panel is disclosed. The panel comprises a printed circuit board, one or a plurality of OEL panels and a plurality of bumps, wherein the OEL is provided with poly solder interconn...
6998289	Multiple layer phase-change memory A phase-change memory may be formed with at least two phase-change material layers separated by a barrier layer. The use of more than one phase-change layer enables a reduction in the programming volume while still providing adequate the...
6992321	Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials High quality epitaxial layers of piezoelectric monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the piezoelectric monocrystalline layers...
6990017	Accessing phase change memories A memory may include a phase change memory element and series connected first and second selection devices. The second selection device may have a higher resistance and a larger threshold voltage than the first selection device. In one e...
6979838	Ultra-high density storage device using phase change diode memory cells and methods of fabrication thereof An ultra-high density data storage device using phase-change diode memory cells, and having a plurality of emitters for directing beams of directed energy, a layer for forming multiple data storage cells and a layered diode structure for...
6974965	Agglomeration elimination for metal sputter deposition of chalcogenides A method for fabricating chalcogenide materials on substrates, which reduces and/or eliminates agglomeration of materials on the chalcogenide materials; and system and devices for performing the method, semiconductor devices so produced,...
6914255	Phase change access device for memories A memory may have access devices formed using a chalcogenide material. The access device does not induce a snapback voltage sufficient to cause read disturbs in the associated memory element being accessed. In the case of phase change me...
6888172	Apparatus and method for encapsulating an OLED formed on a flexible substrate An apparatus and method are disclosed for encapsulating an OLED device formed on a flexible substrate. The OLED device is moisture protected by an encapsulation which sandwiches the OLED device between two transparent dielectric metal ox...
6878595	Technique for suppression of latchup in integrated circuits (ICS) The present invention relates to a technique that can be used to reduce the sensitivity of integrated circuits to a failure mechanism to which some integrated circuits (ICs) are susceptible, known as latchup. The present invention relate...
6825489	Microelectronic device, structure, and system, including a memory structure having a variable programmable property and method of forming the same A microelectronic programmable structure suitable for storing information and a method of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. ...
6815244	Methods for producing a thermoelectric layer structure and components with a thermoelectric layer structure A method produces a thermoelectric layer structure on a substrate and the thermoelectric layer structure has at least one electrically anisotropically conductive V-VI layer, in particular a (Bi, Sb) 2 (Te, Se) 3 layer. The V-VI layer i...
6673648	Isolating phase change material memory cells A phase change memory may have reduced reverse bias current by providing a N-channel field effect transistor coupled between a bipolar transistor and a conductive line such a row line. By coupling the gate of the MOS transistor to the ro...
6576921	Isolating phase change material memory cells A phase change memory may have reduced reverse bias current by providing a N-channel field effect transistor coupled between a bipolar transistor and a conductive line such a row line. By coupling the gate of the MOS transistor to the ro...
6548751	Thin film flexible solar cell A thin-film flexible solar cell built on a plastic substrate comprises a cadmium telluride p-type layer and a cadmium sulfide n-type layer sputter deposited onto a plastic substrate at a temperature sufficiently low to avoid damaging or ...
6521961	Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor An enhancement mode semiconductor device has a barrier layer disposed between the gate electrode of the device and the semiconductor substrate underlying the gate electrode. The barrier layer increases the Schottky barrier height of the ...
6441490	Low dielectric constant stop layer for integrated circuit interconnects An integrated circuit and manufacturing method therefor is provided having a semiconductor substrate with a semiconductor device and a device dielectric layer formed on the semiconductor substrate. A channel dielectric layer on the devic...
6114052	Ingot plate made of thermoelectric material, rectangular bar cut from the ingot plate, and process of fabricating the ingot plate
6050827	Method of manufacturing a thin-film transistor with reinforced drain and source electrodes A thin film transistor where source and drain electrodes are film laminates including at least two layers. A first layer film of the laminate, which is formed to a thickness of 10 to 700 Å is in ohmic contact with underlying semiconduc...
6005273	Transistors having controlled conductive spacers, uses of such transistors and methods of making such transistors A transistor structure includes an insulated conductive gate spacer or a conductive layer under a nonconductive spacer, together forming a composite spacer, which contacted and driven separately from the conventional gate of the transist...
5880472	Multilayer plate for x-ray imaging and method of producing same A multilayer plate for X-ray imaging is provided, which includes a substrate, a biasing electrode and a selenium-based membrane sandwiched between the substrate and the biasing electrode. The selenium-based membrane comprises a thick pho...
5594263	Semiconductor device containing a semiconducting crystalline nanoporous material This invention relates to a semiconductor device comprising at least one p-n junction. The junction is formed from a "p" semiconductor contacting an "n" semiconductor. Said device characterized in that at least one of said "p" or "n" sem...
5530263	Three dot computing elements There is provided by this invention logic and memory elements of atomic or near-atomic scale useful in computer central processing units. These elements consist of two quantum dots having opposite states and a third quantum dot situated ...
5506426	Compound semiconductor, a method for producing a thin film thereof, and a semiconductor device having the thin film Chalcopyrite compound semiconductor thin films represented by I-III-VI 2 -x V x or I-III-VI 2 -x VII x , and semiconductor devices having a I-III-VI 2 /I-III-VI 2 -x V x or I-III-VI 2 /I-III-VI 2 -x VII x chalcopyrite homojunction a...
5420445	Aluminum-masked and radiantly-annealed group II-IV diffused region Only the areas of the CdTe/HgCdTe interface of a FPA detector circuit which is coupled by an epoxy to a silicon-based integrated circuit that require interdiffusing are heated to a sufficiently high temperature or have photons of light i...
5415699	Superlattice structures particularly suitable for use as thermoelectric cooling materials A superlattice comprising alternating layers of (PbTeSe) m and (BiSb) n (where m and n are the number of PbTeSe and BiSb monolayers per superlattice period, respectively) having engineered electronic structures for improved thermoelect...
5399882	Camera device and method of manufacturing the same A camera device having favorable multiplication characteristics (quantum efficiency) as well as improved sensitivity in a visible light region (especially the region on the red side) and a method of manufacturing the same are provided. T...
5378905	Ferroelectric field effect transistor with fluoride buffer and IV-VI ferroelectric There is interposed a buffer film composed of IIa group fluoride and having characteristics of orientation to a surface direction (111), in which mismatching in lattice constant with a crystal element of a semiconductor substrate is larg...
5329138	Short channel CMOS device capable of high performance at low voltage Herein disclosed is a CMOSFET, in which an n-channel MISFET Qn has a gate electrode 11n made of n-type polycrystalline silicon, in which a p-channel MISFET Qp has a gate electrode 11p made of p-type polycrystalline silicon, In which the ...
RE34158	Complementary semiconductor device A monolithic complementary semiconductor device comprising n-type and p-type well regions separated by a dielectric isolation region extending from the surface into the substrate region. The well region includes a highly doped buried reg...

Matches 1 - 50 out of 397	1 2 3 4 5 6 7 8 >