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Document	Document Title
7473925	P-type group II-VI semiconductor compounds A persistent p-type group II-VI semiconductor material is disclosed. The group II-VI semiconductor includes atoms of group II elements, atoms of group VI elements, and one or more p-type dopants. The p-type dopant concentration is suffic...
7462862	Transistor using an isovalent semiconductor oxide as the active channel layer A semiconductor device can include a channel including an oxide comprising a combination of isovalent cations selected from within the D block and the P block of the Periodic Table.
7432526	Surface-passivated zinc-oxide based sensor A semiconductor device has a heterostructure including a first layer of semiconductor oxide material. A second layer of semiconductor oxide material is formed on the first layer of semiconductor oxide material such that a two dimensional...
7420204	Organic transistor An organic transistor is capable of emitting light at high luminescence efficiency, operating at high speed, handling large electric power, and can be manufactured at low cost. The organic transistor includes an organic semiconductor lay...
7411209	Field-effect transistor and method for manufacturing the same A method for manufacturing a field-effect transistor includes the steps of forming a source electrode and a drain electrode each containing hydrogen or deuterium; forming an oxide semiconductor layer in which the electrical resistance is...
7404913	Codoped direct-gap semiconductor scintillators Fast, bright inorganic scintillators at room temperature are based on radiative electron-hole recombination in direct-gap semiconductors, e.g. CdS and ZnO. The direct-gap semiconductor is codoped with two different impurity atoms to conv...
7394118	Chemical sensor using semiconducting metal oxide nanowires Indium oxide nanowires are used for determining information about different chemicals or Biologics. Chemicals are absorbed to the surface of the nanowires, and cause the semiconducting characteristics of the Nanowires to change. These ch...
7368067	P-type zinc oxide semiconductor film and process for preparation thereof A p-type ZnO semiconductor film comprised mainly of Zn and O elements is disclosed. The film is characterized as containing an alkali metal and nitrogen. Preferably, the alkali metal is contained such that its concentration is distribute...
7361929	Field-effect transistors with weakly coupled layered inorganic semiconductors A field-effect transistor includes source, drain, and gate electrodes; a crystalline or polycrystalline layer of inorganic semiconductor; and a dielectric layer. The layer of inorganic semiconductor has an active channel portion physical...
7361928	Doped aluminum oxide dielectrics Doped aluminum oxide layers having a porous aluminum oxide layer and methods of their fabrication. The porous aluminum oxide layer may be formed by evaporation physical vapor deposition techniques to facilitate formation of a high-purity...
7351607	Large scale patterned growth of aligned one-dimensional nanostructures A method of making nanostructures using a self-assembled monolayer of organic spheres is disclosed. The nanostructures include bowl-shaped structures and patterned elongated nanostructures. A bowl-shaped nanostructure with a nanorod grow...
7348617	Semiconductor device A semiconductor device comprising a ferroelectric capacitor having improved reliability is disclosed. According to one aspect of the present invention, it is provided a semiconductor device comprising a transistor formed on a semiconduct...
7339187	Transistor structures Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantial...
7329915	Rectifying contact to an n-type oxide material or a substantially insulating oxide material A rectifying contact to an n-type oxide material and/or a substantially insulating oxide material includes a p-type oxide material. The p-type oxide material includes a copper species and a metal species, each of which are present in an ...
7323635	Photovoltaic cell A method of making a photovoltaic cell includes contacting a cross-linking agent with semiconductor particles, and incorporating the semiconductor particles into the photovoltaic cell.
7323356	LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se an...
RE39967	Solid-state photoelectric device A solid state photovoltaic device is formed on a substrate and includes a photoactive channel layer interposed between a pair of electrodes. The photoactive channel layer includes a first material which absorbs light and operates as a ho...
7306988	Memory cell and method of making the memory cell Methods of making memory devices/cells are disclosed. A memory cell contains first and second electrode layers and a controllably conductive media therebetween. The controllably conductive media contains a copper sulfide-containing passi...
7297977	Semiconductor device One exemplary embodiment includes a semiconductor device. The semiconductor device comprising a channel including one or more of a metal oxide including zinc-gallium, cadmium-gallium, cadmium-indium.
7294852	Transparent conductive films and processes for forming them A target containing an indium oxide and a tin oxide is used and sputtered particles from the target are transported by a forced gas flow of a sputter gas onto an organic substrate and deposited on the organic substrate while applying a D...
7294851	Dense seed layer and method of formation Methods of forming dense seed layers and structures thereof. Seed layers comprising a monolayer of molecules having a density of about 0.5 or greater may be manufactured over a metal layer, resulting in a well defined interface region be...
7291781	Complex oxide having n-type thermoelectric characteristics The present invention provides a complex oxide having a composition represented by the formula La 1−x M x NiO 2.7−3.3 or (La 1−x M x ) 2 NiO 3.6−4.4 (wherein M is at least one element selected from the group consisting of Na, K...
7276729	Electronic systems having doped aluminum oxide dielectrics Doped aluminum oxide layers having a porous aluminum oxide layer and methods of their fabrication. The porous aluminum oxide layer may be formed by evaporation physical vapor deposition techniques to facilitate formation of a high-purity...
7265381	Opto-electronic memory element on the basis of organic metalloporphyrin molecules A memory cell for opto-electronic applications includes a substrate, a first electrode and a second electrode, and an active layer arranged between the first and the second electrodes, wherein the active layer includes a metalloporphyrin...
7262504	Multiple stage electroless deposition of a metal layer A multiple stage method of electrolessly depositing a metal layer is presented. This method may have the two main stages of first forming a thin metal layer on a metal surface using an electroless plating solution containing activating a...
7262361	Semiconductor thin film electrodes made by using organic dyes as the photosensitizer and photoelectric conversion devices A semiconductor film electrode using a specific organic dye sensitizer, a high efficiency dye-sensitized photovoltaic conversion element using the electrode, and a dye-sensitized photoelectrochemical solar cell using the element are desc...
7253017	Molding technique for fabrication of optoelectronic devices Charge splitting networks for optoelectronic devices may be fabricated using a nanostructured porous film, e.g., of SiO 2 , as a template. The porous film may be fabricated using surfactant temptation techniques. Any of a variety of semi...
7229676	Thermal imaging processes and products of electroactive organic material Processes for effecting thermal transfer of electroactive organic material are disclosed wherein unwanted portions of a layer of electroactive organic material supported by a donor element are removed or transferred from the layer by the...
7227182	Optical property normalization for a transparent electrical device Optical property normalization for a transparent electrical device is described. In an embodiment, an electrical device includes a plurality of laterally displaced regions that are substantially transparent. Each region of the plurality ...
7208755	Light-emitting device and method of fabricating the same A light emitting device 1 has formed therein a light emitting layer section 24 based on a double heterostructure in which a p-type cladding layer 34 , an active layer 33 and an n-type cladding layer 32 , individually composed of ...
7189992	Transistor structures having a transparent channel Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantial...
7161174	Field-effect transistors having doped aluminum oxide dielectrics Doped aluminum oxide layers having a porous aluminum oxide layer and methods of their fabrication. The porous aluminum oxide layer may be formed by evaporation physical vapor deposition techniques to facilitate formation of a high-purity...
7161173	P-type group II-VI semiconductor compounds A persistent p-type group II-VI semiconductor material is disclosed. The group II-VI semiconductor includes atoms of group II elements, atoms of group VI elements, and one or more p-type dopants. The p-type dopant concentration is suffic...
7161171	Material for use in the manufacturing of luminous display devices A material including a glass or vitroceramic substrate having a first layer and a second layer deposited thereon, each of the first and second layers including at least one transparent conducting oxide (TCO). The first layer has a roughn...
7157733	Floating-gate field-effect transistors having doped aluminum oxide dielectrics Doped aluminum oxide layers having a porous aluminum oxide layer and methods of their fabrication. The porous aluminum oxide layer may be formed by evaporation physical vapor deposition techniques to facilitate formation of a high-purity...
7157641	Organic photovoltaic cells with an electric field integrally-formed at the heterojunction interface A bi-layer photovoltaic cell, and method ( 100 ) of making same, with an electric field applied at the p-n heterojunction interface. The cell includes a first semiconductor layer including a binder, nanocrystals of an n-type semiconducto...
7157307	Zn-base semiconductor light-emitting device and method for manufacturing same On the surface of a substrate 1 , a precursory buffer layer 2 ′ composed of an In-base compound or a Zn-base compound, not contained in the substrate 1 , is formed so as to be stacked thereon as a polycrystal layer or an amorphous l...
RE39445	Solar cell and solar cell unit The solar cell of the present invention includes a titanium dioxide semiconductor that is held between a pair of electrodes so that the titanium dioxide semiconductor and at least one of the electrodes form a rectification barrier.
7132598	Hole transporting agents and photoelectric conversion device comprising the same A photoelectric conversion device comprising a semiconductor and an organic electrically conducting agent, wherein the organic electrically conducting agent exhibits a melting temperature T m which is lower than the operation temperatur...
7126153	Organic transistor An organic transistor is capable of emitting light at high luminescence efficiency, operating at high speed, handling large electric power, and can be manufactured at low cost. The organic transistor includes an organic semiconductor lay...
7126054	Raw material kit for electrolytic composition, electrolytic composition, and dye-sensitized solar cell Disclosed is a dye-sensitized solar cell comprising a gel electrolyte that contains a gelling agent and an electrolyte, wherein the gelling agent contains at least one kind of a polymer selected from the group consisting of a first polym...
7119411	Interconnect structure for TFT-array substrate and method for fabricating the same An interconnect structure connecting two isolated metal lines in a non-display area of a TFT-array substrate. A first metal line is disposed on the substrate, covered with a first insulating layer. A second metal line is disposed on the ...
7118936	Organic dye-sensitized metal oxide semiconductor electrode and its manufacturing method, and organic dye-sensitized solar cell The present invention provides a semiconductor electrode of organic dye-sensitized metal oxide having a semiconductor layer of metal oxide that can be easily prepared, and an organic dye-sensitized solar cell. The semiconductor electrode...
7109409	Magnetic field enhanced photovoltaic device A magnetic field enhanced photovoltaic device includes a photoelectric conversion layer, a first electrode, a second electrode, a ferro-antiferromagnetic exchange coupling layer and an applied magnetic field. The first electrode and the ...
7101728	Programmable structure including an oxide electrolyte and method of forming programmable structure A microelectronic programmable structure suitable for storing information and methods of forming and programming the structure are disclosed. The programmable structure generally includes an oxide ion conductor and a plurality of electro...
7098144	Iridium oxide nanotubes and method for forming same A method is provided for forming iridium oxide (IrOx) nanotubes. The method comprises: providing a substrate; introducing a (methylcyclopentadienyl)(1,5-cyclooctadiene)iridium(I) precursor; introducing oxygen as a precursor reaction gas;...
7087834	Apparatus and method for photovoltaic energy production based on internal charge emission in a solid-state heterostructure An apparatus and method for solar energy production comprises a multi-layer solid-state structure including a photosensitive layer, a thin conductor, a charge separation layer, and a back ohmic conductor, wherein light absorption occurs ...
7087833	Nanostructure and nanocomposite based compositions and photovoltaic devices Nanocomposite photovoltaic devices are provided that generally include semiconductor nanocrystals as at least a portion of a photoactive layer. Photovoltaic devices and other layered devices that comprise core-shell nanostructures and/or...
7087831	Photoelectric conversion device and method of production thereof A photoelectric conversion device comprising at least an electron acceptive charge transfer layer, an electron donative charge transfer layer, and a light absorption layer existing between the charge transfer layers, wherein either one o...
7064346	Transistor and semiconductor device In an npn-type transistor, the emitter 42 and the collector 43 are formed of an n-type transparent semiconductor, and the base 41 is formed by a p-type transparent semiconductor. The base electrode 44 , the emitter electrode 45 ...

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