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7405419 |
A method of forming and a device including an interconnect structure having a unidirectional electrical conductive material is described. The unidirectional conductive material may overlie interconnect materials, and/or may surround inte...
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7321157 |
A method of fabricating a CoSb 3 -based thermoelectric device is disclosed. The method includes providing a high-temperature electrode, providing a buffer layer on the high-temperature electrode, forming composite n-type and p-type layer...
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7241677 |
This invention concerns a process for producing integrated circuits containing at least one layer of elemental metal which during the processing of the integrated circuit is at least partly in the form of metal oxide, and the use of an o...
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7229676 |
Processes for effecting thermal transfer of electroactive organic material are disclosed wherein unwanted portions of a layer of electroactive organic material supported by a donor element are removed or transferred from the layer by the...
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7227177 |
A particle, includes a semiconductor nanocrystal. The nanocrystal is doped.
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7205626 |
In a semiconductor module, twenty five semiconductor devices having light receiving properties, for example, are arranged in five by five matrices using a conductor mechanism formed from six lead frames Each column of semiconductor devic...
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7164188 |
A plurality of buried conductors and/or buried plate patterns formed within a monocrystalline substrate is disclosed. A plurality of empty-spaced buried patterns are formed by drilling holes in the monocrystalline substrate and annealing...
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7115909 |
Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-typ...
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7109528 |
With a solar ball 10 serving as a light-receiving semiconductor apparatus, the outer surface of a spherical solar cell 1 is covered with a light-transmitting outer shell member 11 , and electrode members 14, 15 are connected to el...
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7105866 |
High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline...
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7057202 |
An ultra-high density data storage device using phase-change diode memory cells, and having a plurality of emitters for directing beams of directed energy, a layer for forming multiple data storage cells and a layered diode structure for...
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6951689 |
The present invention provides a substrate with a transparent conductive layer comprising at least one layer stacked on a supporting substrate, wherein the surface of the transparent conductive layer has a distribution of inclination arc...
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6939604 |
A particle, includes a semiconductor nanocrystal. The nanocrystal is doped.
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6888172 |
An apparatus and method are disclosed for encapsulating an OLED device formed on a flexible substrate. The OLED device is moisture protected by an encapsulation which sandwiches the OLED device between two transparent dielectric metal ox...
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6858866 |
The present invention, a III-nitride light emitting diode (LED) and a manufacture method thereof, forms a magnetic metal layer in a conventional III-nitride LED by the method of thermal evaporation, e-beam evaporation, ion sputtering, or...
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6849891 |
A RRAM memory cell is formed on a silicon substrate having a operative junction therein and a metal plug formed thereon, includes a first oxidation resistive layer; a first refractory metal layer; a CMR layer; a second refractory metal l...
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6717358 |
A cascaded organic electroluminescent device with connecting units having improved voltage stability is disclosed. The device comprises an anode, a cathode, a plurality of organic electroluminescent units disposed between the anode and t...
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6642540 |
A semiconductor device is arranged by having a shield/planarization portion including a silicided active region formed on the main surface of a semiconductor substrate and a non-active region provided by device-isolation on the surface, ...
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6011272 |
A method, and structure resulting therefrom, of forming a metal silicide at a shallow junction of a diode in a single crystalline substrate without encroaching on the shallow junction by forming a metal layer on the substrate over the ju...
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5760482 |
The invention relates to a semiconductor device of the type sealed in glass, comprising a silicon semiconductor body having a pn-junction between opposing faces which are connected to slugs of a transition metal by means of a bonding lay...
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5614727 |
A thin film diode and method of fabrication having large current capability and low-turn on voltage is provided as a switching or protective device against electrostatic discharge in integrated devices such as magnetoresistive sensors an...
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5559817 |
A compliant layer metallization for relieving thermal and mechanical stress developed between a semiconductor and a semiconductor submount. The compliant layer metallization includes a compliant layer, a wetting layer and a barrier layer...
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5506426 |
Chalcopyrite compound semiconductor thin films represented by I-III-VI 2 -x V x or I-III-VI 2 -x VII x , and semiconductor devices having a I-III-VI 2 /I-III-VI 2 -x V x or I-III-VI 2 /I-III-VI 2 -x VII x chalcopyrite homojunction a...
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5323059 |
Briefly stated, the present invention provides a vertical current flow semiconductor device (17). The vertical current flow semiconductor device (17) includes a semiconductor substrate (12) having an intermediate conductor layer (16) on ...
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5213906 |
The present invention relates to a composite material. This material comprises at least one layer A of III-V compound and one epitaxial layer B on said layer of III-V compounds, the epitaxial layer corresponding to the empirical formula ...
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5160985 |
An insulated gate bipolar transistor has a P-type well region which is partially formed in a surface of an N - -type epitaxial layer formd on a P + -type semiconductor substrate. An N + -type emitter region is partially formed in a su...
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5148241 |
A Schottky diode device can be fabricated by forming a positive resist layer on an insulating layer formed on N type substrate, and patterning the resist layer. The pattern in the resist includes (i) a first isolation region-defining ann...
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4335362 |
A semiconductor device comprising, a plurality of semiconductor layers having an outer semiconductor layer, and a contact layer uniformly and entirely covering said outer semiconductive layer and having over its entire surface the same m...
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4271424 |
Disclosed herein is an improvement for the electrode structure of the MIS type semiconductor integrated circuit, in which the ohmic contact with the Si substrate is formed on the top of the semiconductor chip. The electrodes which consis...
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4231053 |
A thin-film single-crystal infrared detector exhibiting an increased freqcy of response. A closed transverse junction, formed by diffusing a central electrode of an impurity rich metal into a lead-salt film epitaxially grown on an insula...
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4011582 |
One region of a large area semiconductor power diode comprises recrystallized semiconductor material formed in situ, and joined to a second region, by temperature gradient zone melting.
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3988762 |
A minority carrier isolation barrier in a body of semiconductor material is formed by the migration of a suitable metal-rich liquid zone of an impurity material through the semiconductor body. A thermal gradient zone melting process is p...
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3975756 |
A new light-sensitive, current limiting solid state diode is formed by using gadolinium as a dopant in a germanium crystal to which a gold-germanium eutectic is alloyed thereto, in order to form a p-n junction.
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3905844 |
A method of making a PN junction device comprising the steps of alloying a metal dot to a semiconductor wafer so as to provide a recrystallization portion, extending the recrystallization portion through the semiconductor wafer, and then...
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3858306 |
PN junctions are formed in a P type body of mercury cadmium telluride by heating an indium body to form hot indium, which is then deposited on a surface of the P type body. The hot indium is believed to cause localized heating of the P t...
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3685141 |
A high Q microalloy varactor having an abrupt PN junction and a Q in the order of 50-100 at 1 GHZ, and the following method for constructing the same. A shallow N type conductivity epitaxial region is deposited atop a low resistivity N +...
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3651426 |
Disclosed is a Gunn-effect device comprising, for example, a crystal of n-type gallium arsenide having alloyed contacts (e.g., indium and gold) which is switched from one frequency of oscillation to another by controlling the incident li...
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3544856 |
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3544395 |
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3519900 |
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3515953 |
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3514675 |
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3464867 |
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3457469 |
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3434893 |
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3434017 |
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3425880 |
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3386893 |
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3385776 |
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3374405 |
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