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7321157 |
A method of fabricating a CoSb 3 -based thermoelectric device is disclosed. The method includes providing a high-temperature electrode, providing a buffer layer on the high-temperature electrode, forming composite n-type and p-type layer...
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7034328 |
A vertical geometry light emitting diode is disclosed that is capable of emitting light in the red, green, blue, violet and ultraviolet portions of the electromagnetic spectrum. The light emitting diode includes a conductive silicon carb...
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6921925 |
In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or othe...
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6881984 |
A resonant-cavity light-emitting diode includes a semiconductor light-emitting layer sandwiched between an under and an upper semiconductor distributed Bragg reflector mirror layer, which are formed on the substrate, a light extracting s...
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6856559 |
Parasitic capacitances formed between bit lines to which signals are to be read out of memory cells and a signal transmission line arranged above them are to be reduced. Second complementary global bit lines for transmitting data read ou...
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6573531 |
System and methods for processing an amorphous silicon thin film sample into a single or polycrystalline silicon thin film are disclosed. The system includes an excimer laser for generating a plurality of excimer laser pulses of a predet...
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6521473 |
The present invention relates to a method of fabricating a liquid crystal display panel that involves patterning a silicon film crystallized by sequential lateral solidification. The method comprises the steps of preparing a silicon film...
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6437363 |
A semiconductor photonic device includes a substrate having a cleavage plane perpendicular to a principal plane thereof; a ZnO film on the substrate; and a compound semiconductor layer expressed by In x Ga y Al z N (x+y+z=1, 0≦x≦1, 0...
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6172370 |
An X-ray imaging array is described together with a method for its manufacture. The array is defined by a set of PN junctions in a silicon wafer that extend all the way through between the two surfaces of the wafer. The PN junctions are ...
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5434531 |
An integrated circuit which includes a pair of serially arranged P channel transistor devices connected with their source and drain terminals in series. The devices are constructed as N well devices in a P substrate. Using a pair of N we...
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5285090 |
Electrical ohmic contacts are made to a matrix of silicon having conductive rods embedded therein without making contact to any of the rods. Those rods which extend to the surface in the selected area of the matrix to be contacted are et...
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4633282 |
A metal-semiconductor field-effect transistor (MESFET) is provided with a p-type region adjacent the n-type region under the drain contact. Holes injected from this p-type region compensate the negative space charge region at the channel...
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4549196 |
A lateral bipolar transistor is described incorporating at least two grooves extending from the upper surface and spaced apart by a predetermined amount from which impurities are introduced to form an emitter region extending from the si...
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4207670 |
Temperature gradient zone melting is utilized to make a solid state neuron which mimics the conducting nerve pulses by a biological nerve cell and its nerve fiber.
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4163983 |
A semiconductor neuron comprises a tunnel diode having a region of recrystallized semiconductor material formed in situ in a columnar structure body of semiconductor material by thermal gradient zone melting. Individual electrical leads ...
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4157564 |
Deep diodes which extend in straight lines through a silicon wafer are produced by migrating aluminum droplets through the wafer while maintaining a finite temperature gradient through the wafer in the direction of straight line droplet ...
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4071378 |
An array of columnar structures are provided in a body of semiconductor material. The material of each columnar structure is recrystallized material of the body having solid solubility of dopant metal therein. Means are provided for conn...
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4063966 |
An array of vapor deposited metal wires is migrated by TGZM through a body of semiconductor material to divide the body into a plurality of individual regions electrically isolated from each other. The preferred crystal orientations of t...
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4063272 |
Disclosed is a semiconductor device and a method for the manufacture thereof. A semiconductor wafer with three stacked regions is provided. An inner region exhibits one conductivity type and the two outer regions exhibit the opposite con...
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4042448 |
Disclosed is a technique useful in the manufacture of semiconductor devices. A semiconductor wafer is provided and isolation regions are formed therein by the temperature gradient zone melting process. A mask is applied to the surface of...
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4032960 |
An anistropic resistor for electrical feed throughs embodies a body of semiconductor material having at least one channel region of recrystallized material of the body formed therein. The channel region extends entirely through, and term...
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4032955 |
A deep diode transistor includes at least one of the emitter, the collector and the base regions comprising recrystallized material of the semiconductor substrate embodying the transistor. Each region of recrystallized material is formed...
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4030116 |
A thermal gradient zone melting technique is employed to migrate an array of metal buttons through a body of semiconductor material to form high aspect ratio P-N junctions therein. Semiconductor devices embodying such P-N junctions are s...
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4024566 |
When an aluminum-rich droplet is migrated along the [100] axis of a silicon crystal during a thermal gradient zone melting operation, a droplet is displaced appreciably from its thermal trajectory by dislocations it encounters in the cry...
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4024565 |
An array of columnar structures are provided in a body of semiconductor material. The material of each columnar structure is recrystallized material of the body having solid solubility of dopant metal therein. Means are provided for conn...
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4011582 |
One region of a large area semiconductor power diode comprises recrystallized semiconductor material formed in situ, and joined to a second region, by temperature gradient zone melting.
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4006040 |
An improved method of initiating the moving of a molten zone of a metal-rich semiconductor material through a solid body of the same semiconductor material embodies the sintering of the metal to the surface of the body. The sintering pro...
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3995309 |
Isolation junctions in semiconductor devices are formed by selected regions of specified conductivity wherein each region has a substantially uniform thickness and resistivity throughout the region. The material of the selected regions i...
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3990093 |
A deep buried electrical layer is provided in a semiconductor device by thermal gradient zone melting.
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3988772 |
The minority carrier lifetime is drastically reduced in an integrated semiconductor power device by introducing deep level impurities such, for example, as gold, silver, platinum, nickel and copper into selected regions of the device by ...
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3988771 |
Deep level impurities such, for example, as gold, platinum, silver, nickel and copper, are introduced into selected regions of semiconductor devices by directional solidification to reduce the charge recombination lifetime and therefore ...
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3988770 |
Deep finger diodes in a body of semiconductor material are fabricated by a thermal gradient zone melting process. A liquid wire or droplet is migrated into the body through one surface to a depth less than the thickness of the body. The ...
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3988769 |
A high voltage diode has a lamellar structured body of semiconductor material. The lamellar structure is produced by the thermal gradient zone melting process method of thermo migrating metal "wires" through the body to form a plurality ...
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3988768 |
A semiconductor controlled rectifier has a lamellar body of semiconductor material of at least one group of four alternate first and second regions of opposite type conductivity. The second regions are made from recrystallized semiconduc...
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3988767 |
A semiconductor switch is a lamellar body of semiconductor material having two major opposed surfaces and at least one group of four regions of alternate type conductivity. At least three of the four regions have recrystallized semicondu...
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3988766 |
A droplet of alloy material containing at least two semiconductor dopant type elements, each of which has a different ratio of diffusivity, is thermomigrated by a thermal gradient zone melting process through a body of semiconductor mate...
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3988764 |
An array of columnar structures are provided in a body of semiconductor material. The material of each columnar structure is recrystallized material of the body having solid solubility of a dopant metal therein. Means are provided for co...
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3988763 |
Isolation junctions in semiconductor devices are formed by selected regions of specified conductivity wherein each region has a substantially uniform thickness and resistivity throughout the region. The material of the selected regions i...
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3988760 |
A deep diode bilateral semiconductor switch has a lamellar body of single crystal semiconductor material of at least five alternate first and second regions of different and opposite type conductivity. The second regions are made from re...
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3988757 |
A deep diode zener has a lamellar structured body of single crystal semiconductor material. The lamellar structure is produced by a thermal gradient zone melting process embodying the thermomigration of metal "wires" through the body to ...
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3982270 |
A varactor has a lamellar structure of a plurality of abutting regions of alternate and opposite type conductivity. The structure is produced by thermal gradient zone melting processing.
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3982269 |
A homogeneous integrated power structure embodies solid state control or signal devices and power devices integrated monolithically to achieve optimum physical characteristics of each device embodied therein at economical cost of manufac...
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3982268 |
A body of semiconductor material has two major opposed surfaces. A region of recrystallized semiconductor material having solid solubility of a dopant material therein is disposed within, and extends entirely through the body and interse...
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3979230 |
An isolation grid is produced by the migration of a metal-rich liquid zone of material through a body of semiconductor material. Planar orientation of the surface through which migration is initiated, directions of wire alignment in the ...
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3904442 |
An isolation grid is produced by the migration of metal-rich liquid zone of material through a body of semiconductor material. Planar orientation of the surface through which migration is initiated, directions of wire alignment in the su...
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3515574 |
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3510368 |
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3001895 |
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3000768 |
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2894862 |
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