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7352617 |
A nano tube cell and a memory device using the same features a cross point cell using a capacitor and a PNPN nano tube switch to reduce the whole memory size. In the memory device, the unit nano tube cell comprising a capacitor and a PNP...
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7329915 |
A rectifying contact to an n-type oxide material and/or a substantially insulating oxide material includes a p-type oxide material. The p-type oxide material includes a copper species and a metal species, each of which are present in an ...
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7298645 |
The present invention discloses a nano tube cell, and a semiconductor device having the nano tube cell and a double bit line sensing structure. The cell array circuit includes a plurality of top sub cell arrays, a plurality of bottom sub...
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7205591 |
A pixel sensor cell structure and method of manufacture. The pixel cell comprises a doped layer formed adjacent to a first side of a transfer gate structure for coupling a collection well region and a channel region. Potential barrier in...
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7173843 |
A nonvolatile memory device features a serial diode cell as a cross-point cell using a nonvolatile ferroelectric capacitor and a serial diode chain. The serial diode cell comprises a ferroelectric capacitor and a serial diode switch. The...
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7112865 |
A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conducti...
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7110291 |
The present invention discloses a nano tube cell, and a semiconductor device having the nano tube cell and a double bit line sensing structure. The cell array circuit includes a plurality of top sub cell arrays, a plurality of bottom sub...
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7105866 |
High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline...
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7084437 |
Provided is an MRAM memory cell structure capable of preventing generation of parasitic transistors. Diodes are adopted as switching elements of an MRAM memory cell. An n-type semiconductor layer and a p-type semiconductor layer, which c...
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7053404 |
A semiconductor component in which the active junctions extend along at least one cylinder perpendicular to the main surfaces of a semiconductor chip substantially across the entire thickness thereof, said cylinder(s) having a cross-sect...
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7034328 |
A vertical geometry light emitting diode is disclosed that is capable of emitting light in the red, green, blue, violet and ultraviolet portions of the electromagnetic spectrum. The light emitting diode includes a conductive silicon carb...
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7026645 |
The present invention involves an electrical verification method that detects moisture within the cavity of the semiconductor or micro-machined device. The method affects an increase in the time for sufficient water vapor to remain withi...
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7009866 |
A nonvolatile memory device features a serial diode cell by effectively arranging a cross point cell array including a nonvolatile ferroelectric capacitor and a serial PN diode chain to reduce the whole memory size. A serial diode cell a...
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6949774 |
New Group III based diodes are disclosed having a low on state voltage (V f ), and structures to keep reverse current (I rev ) relatively low. One embodiment of the invention is Schottky barrier diode made from the GaN material system in...
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6936860 |
An LED includes an insulating substrate; a buffer layer positioned on the insulating substrate; an n + -type contact layer positioned on the buffer layer, the contact layer having a first surface and a second surface; an n-type cladding ...
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6921925 |
In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or othe...
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6855975 |
An integrated programmable conductor memory cell and diode device in an integrated circuit comprises a diode and a glass electrolyte element, the glass electrolyte element having metal ions mixed or dissolved therein and being able to se...
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6822258 |
A self-organized nanometer interface structure is disclosed. During the reactive sputtering process, the chemical dynamics difference among reactants induces self-organization to form a special nanometer interface structure. The nanomete...
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6740907 |
A junction field-effect transistor is formed by providing a p-type gate region in a surface of an n-type semiconductor layer and n-type drain and source regions sandwiching the gate region on the surface of the n-type semiconductor layer...
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6690030 |
A gate oxide film formed on the surface of a silicon substrate is partly reduced in thickness or “thinned” at its specified part overlying a source region. In a gate region, a multilayer structure is formed which includes a first pol...
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6661074 |
A receiver for radio or television signals provided with a high-frequency circuit having a discrete semiconductor component which includes a planar variable capacitance diode and an integrated series resistor formed on a common semicondu...
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6507043 |
A method of epitaxially growing backward diodes as well as apparatus grown by the method are presented herein. More specifically, the invention utilizes epitaxial-growth techniques such as molecular beam epitaxy in order to produce a thi...
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6504178 |
A semiconductor imaging device is disclosed. The device includes a substrate having at least first and second surfaces opposing each other, and a circuit layer. The substrate is doped to exhibit a first conductivity type. The substrate i...
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6498356 |
There is disclosed an LED array chip which can minimize LED optical property deterioration by addition of a surface protective film, and mainly side effects such as light quantity decrease and light quantity dispersion increase among lig...
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6479840 |
Disclosed is an inventive diode which can reduce a stray capacity to improve various characteristics thereof, in which a dielectric layer, a conductive layer and a second dielectric layer are respectively formed by deposition in this ord...
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6465804 |
A heterojunction bipolar transistor (HBT) having an emitter structure capable of reducing the current crowding effect and preventing thermal instabilities is disclosed, wherein a negative differential resistance. (NDR) element is added t...
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6437363 |
A semiconductor photonic device includes a substrate having a cleavage plane perpendicular to a principal plane thereof; a ZnO film on the substrate; and a compound semiconductor layer expressed by In x Ga y Al z N (x+y+z=1, 0≦x≦1, 0...
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6417526 |
The invention relates to a semiconductor device having a rectifying junction ( 5 ) which is situated between two (semiconductor) regions ( 1, 2 ) of an opposite conductivity type. The second region ( 2 ), which includes silicon, is thick...
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6238947 |
A structure consisting of a substrate and a gallium nitride based compound semiconductor formed on the substrate, includes: a light-emitting layer forming portion consisting at least of a semiconductor layer of a first conductivity type ...
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6198132 |
In a process for producing a thin-film device, a conducting layer composed of an anodically oxidizable metal is formed on a substrate and is etched to form gate bus lines and gate electrode having upper surfaces parallel to the substrate...
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5737259 |
A diode type read only memory (ROM) includes a diode as a memory cell. The diode is a logic level "on" memory cell and coupled to one of the word lines and one of the bit lines of the ROM. A relative high voltage is given to the bit line...
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5705827 |
The tunnel transistor of the present invention has either a junction structure wherein a degenerated first semiconductor having one conduction type, a non-degenerated second semiconductor and a degenerated third semiconductor having the ...
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5686739 |
Disclosed is a three terminal tunnel device exhibiting a tunneling of carriers in a forward direction. The device comprises an intrinsic semiconductor region, an n-type degenerate semiconductor source region abutting one side of the intr...
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5679963 |
The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control t...
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5485017 |
A semiconductor device has an n + source region, a first n - channel region, a barrier layer, a second n - channel region, a pair of n + drain regions, an insulating film, and a pair of metal electrodes over the respective n + d...
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5298767 |
A semiconductor device employs at least one layer of semiconducting porous silicon carbide (SiC). The porous SiC layer has a monocrystalline structure wherein the pore sizes, shapes, and spacing are determined by the processing condition...
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5166761 |
A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which s...
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5145809 |
An improved method for manufacturing a semiconductor device is described. In the preferred embodiment, a Gunn diode is manufactured from InP active and buffer layers. The buffer layer is deposited on a GaAs substrate using an epitaxial d...
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5063418 |
Non-linear optical materials, i.e., those optical materials whose indices refraction depend on input radiation intensity, are few and of low non-linearities; this invention uses various metallic patterns on a transparent substrate, with ...
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4163983 |
A semiconductor neuron comprises a tunnel diode having a region of recrystallized semiconductor material formed in situ in a columnar structure body of semiconductor material by thermal gradient zone melting. Individual electrical leads ...
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3713909 |
A tunnel diode having a substantially flat junction area. The diode is fabricated on a heavily doped semiconductor substrate by chemical vapor deposition of a film of elemental dopant (of a conductivity type opposite that of the substrat...
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3670218 |
A monolithic heteroepitaxial microwave tunnel diode with a vertical tunnel junction is manufactured from an insulating substrate on which a layer of p-type semiconductor material has been grown. A layer of dielectric thin film is placed ...
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3544856 |
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3484657 |
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3482306 |
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3475071 |
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3408732 |
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3408275 |
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3391308 |
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3375416 |
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