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7473983 |
In accordance with the invention, there are various methods of making an integrated circuit comprising a bipolar transistor. According to an embodiment of the invention, the bipolar transistor can comprise a substrate, a collector compri...
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7304334 |
Bipolar junction transistors (BJTs) are provided including silicon carbide (SiC) substrates. An epitaxial SiC base region is provided on the SiC substrate. The epitaxial SiC base region has a first conductivity type. An epitaxial SiC emi...
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7271078 |
A method for fabricating a semiconductor device improves off-state leakage current and junction capacitance characteristics in a pMOS transistor. The method includes forming a device isolation layer defining an active area in a semicondu...
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7173274 |
A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first ...
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7008852 |
A process for forming at least one interface region between two regions of semiconductor material. At least one region of dielectric material comprising nitrogen is formed in the vicinity of at least a portion of a boundary between the t...
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6958491 |
Test probe pads are located lateral to, and spaced from, the emitter, base or collector region of a bipolar transistor, preferably on separate pedestals, and connected to their respective transistor regions by air bridges. The probe pads...
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6949764 |
A bipolar transistor structure is described incorporating an emitter, base, and collector having a fully depleted region on an insulator of a Silicon-On-Insulator (SOI) substrate without the need for a highly doped subcollector to permit...
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6939771 |
A process for forming at least one interface region between two regions of semiconductor material. At least one region of dielectric material comprising nitrogen is formed in the vicinity of at least a portion of a boundary between the t...
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6917061 |
A heterojunction bipolar transistor is provided that has a reduced turn-on voltage threshold. A base spacer layer is provided and alternately an emitter layer is provided that has a lowered energy gap. The lowered energy gap of the base ...
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6870184 |
A bipolar junction transistor (BJT) requires the fabrication of a BJT structure and of a support post which is adjacent to, but physically and electrically isolated from, the BJT structure. The BJT structure includes a semi-insulating su...
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6849871 |
A bipolar transistor structure is described incorporating an emitter, base, and collector having a fully depleted region on an insulator of a Silicon-On-Insulator (SOI) substrate without the need for a highly doped subcollector to permit...
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6831293 |
A p-n junction-type compound semiconductor light-emitting device having a substrate formed of a single crystal, a first barrier layer provided on the substrate and formed of a compound semiconductor of a first conduction type, a light-em...
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6809400 |
This disclosure describes a structure for transistor devices formed from compound semiconductor materials; and particularly for heterojuntion bipolar transistors (HBTs); and more particularly for the collector structure of a double HBT (...
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6774411 |
According to a disclosed embodiment, a base region is grown on a transistor region. A dielectric layer is next deposited over the base region. The dielectric layer can comprise, for example, silicon dioxide, silicon nitride, or a suitabl...
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6727516 |
A power conversion apparatus has a circuit configuration in which a collector voltage of an IGBT is divided. It also has a unit which protects the IGBT against overvoltages applied to the collector by outputting a potential of a voltage ...
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6717177 |
A power conversion apparatus has a circuit configuration in which a collector voltage of an IGBT is divided. It also has a unit which protects the IGBT against overvoltages applied to the collector by outputting a potential of a voltage ...
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6677621 |
There is provided a light emitting device which is bright and has low electric power consumption and high reliability. A triplet EL element 203 electrically connected to a current controlling TFT 102 is provided in a pixel portion 2...
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6569730 |
A new design for a high voltage bipolar transistor is disclosed. Instead of a buried subcollector (which would be N+ in an NPN device), a buried P+ layer is used. The presence of this P+ layer results in pinch-off between itself and the ...
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6545340 |
A semiconductor device of the invention in the form of a superlattice-heterojunction bipolar transistor (SL-HBT) 10 incorporates a superlattice region 16 within an emitter mesa 21. The superlattice region 16 provides a non-linear...
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6465870 |
A ESD (electrostatic discharge) robust SiGe bipolar transistor is provided which comprises a substrate of a first conductivity type; a doped subcollector region of a second conductivity type formed on the substrate, the doped subcollecto...
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6465804 |
A heterojunction bipolar transistor (HBT) having an emitter structure capable of reducing the current crowding effect and preventing thermal instabilities is disclosed, wherein a negative differential resistance. (NDR) element is added t...
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6396125 |
A semiconductor device is formed of a casing, a semiconductor element disposed in the casing, and a control terminal assembly situated outside the casing. The control terminal assembly includes control terminals connected to the semicond...
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6274921 |
A semiconductor integrated circuit has a protective NMOS transistor having a drain and a source respectively electrically connected to a first interconnection (electrically connected to a base electrode of a bipolar transistor or a gate ...
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6208012 |
The invention provides a zener zap diode having a high reliability and a method of manufacturing the same that can remove the problems accompanied with the zener zap trimming. In order to attain the object, the zener zap diode according ...
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5369304 |
A plurality of doped areas (12, 13, 14) are formed on a surface of a semiconductor wafer. A titanium nitride layer (17) is used for covering the plurality of doped areas (12, 13, 14) and for providing electrical connection between the do...
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5254485 |
There is disclosed a method for manufacturing a bipolar semiconductor device in which emitter region and active base region are formed by implanting impurities of first and second conduction types in a first semiconductor region of the f...
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5217909 |
A method for manufacturing a bipolar transistor in which the base, emitter and collector terminals are produced from a single, planar layer of, for example, polysilicon, directly deposited onto a substrate. The planar layer is doped by a...
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4549196 |
A lateral bipolar transistor is described incorporating at least two grooves extending from the upper surface and spaced apart by a predetermined amount from which impurities are introduced to form an emitter region extending from the si...
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4032955 |
A deep diode transistor includes at least one of the emitter, the collector and the base regions comprising recrystallized material of the semiconductor substrate embodying the transistor. Each region of recrystallized material is formed...
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3935587 |
A bipolar transistor is provided with both high voltage and high frequency capabilities. A semiconductor body of a resistivity between 10 and 100 ohm-cm forms the collector region of the transistor and has an epitaxial semiconductor laye...
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3746948 |
A semiconductor element comprises a disc of semiconductor material which includes at least four active layers of alternatively opposite conductivity type having attached metallic electrodes to each of the outside layers. In order to avoi...
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3649882 |
In a germanium transistor wherein an aluminum emitter is selectively diffused from an aluminum trichloride vapor phase chemical displacement reaction with germanium and is localized by a patterned or windowed silicon dioxide mask, the su...
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3633271 |
A multijunction, multilayer semiconductor device is formed by alloying the surface of a body of semiconductor material with a material which contains an impurity and includes gaps or perforations therein so that an emitter zone is formed...
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3629017 |
A method of producing a semiconductor device, in which a region of a first conductivity type contains a plurality of regions of a second conductivity type, includes, after formation of the first conductivity type region, masking the semi...
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3619736 |
An alloy junction transistor in which an indium dot serving as an emitter impurity and an indium antimony alloy dot containing 1 to 0.01 percent by weight of antimony relative to indium and serving as a collector impurity are alloyed wit...
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3615933 |
The method of making transistors in which germanium and tantalum discs are joined by an adhesion metal such as aluminum such that the joined surfaces form an electrical contact and forms the collector. The emitter is formed on the second...
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3512055 |
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3500141 |
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3482306 |
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3397450 |
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3388012 |
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3346788 |
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3317801 |
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3309244 |
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3275482 |
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3274667 |
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3268375 |
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3265943 |
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3263138 |
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3257589 |
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